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1. 发明申请

US20130307139A1 BONDING OF SUBSTRATES INCLUDING METAL-DIELECTRIC PATTERNS WITH METAL RAISED ABOVE DIELECTRIC AND STRUCTURES SO FORMED 有权
标题翻译：包括金属介电模式在内的金属与电介质结构的结合，形成结构
公开(公告)号：US20130307139A1
公开(公告)日：2013-11-21
申请号：US13443418
申请日：2012-04-10
申请人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
发明人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , B23K20/023 , B23K20/233 , B23K20/24 , B23K2101/42 , H01L24/03 , H01L24/08 , H01L24/12 , H01L24/80 , H01L2224/0381 , H01L2224/03845 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/08147 , H01L2224/08148 , H01L2224/80203 , H01L2224/80345 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/80986 , H01L2924/14 , H01L2924/1461 , Y10T428/24479 , Y10T428/24521 , Y10T428/24545 , Y10T428/24612 , Y10T428/31678 , H01L2924/00012 , H01L2924/0001 , H01L2924/00
摘要： Bonding of substrates including metal-dielectric patterns on a surface with the metal raised above the dielectric, as well as related structures, are disclosed. One method includes providing a first substrate having a metal-dielectric pattern on a surface thereof; providing a second substrate having a metal-dielectric pattern on a surface thereof; performing a process resulting in the metal being raised above the dielectric; cleaning the metal; and bonding the first substrate to the second substrate. A related structure is also disclosed. The bonding of raised metal provides a strong bonding medium, and good electrical and thermal connections enabling creation of three dimensional integrated structures with enhanced functionality.
摘要翻译：公开了包括金属电介质图案在表面上与在电介质上方凸起的金属以及相关结构的接合。一种方法包括在其表面上提供具有金属 - 电介质图案的第一基板; 提供在其表面上具有金属 - 电介质图案的第二基板; 执行导致金属在电介质上方升高的过程; 清洗金属; 以及将所述第一基板接合到所述第二基板。还公开了相关的结构。凸起金属的结合提供了强大的粘合介质，以及良好的电气和热连接，能够创建具有增强功能的三维集成结构。

2. 发明授权

US07969770B2 Programmable via devices in back end of line level 有权
标题翻译：可通过线路级后端设备进行编程
公开(公告)号：US07969770B2
公开(公告)日：2011-06-28
申请号：US11833321
申请日：2007-08-03
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： G11C11/00
CPC分类号： H01L28/65 , H01L28/20 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683 , Y10S977/754
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 在所述第一介电层上方的至少一个隔离层; 隔离层内的加热器; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

3. 发明授权

US08617689B2 Bonding of substrates including metal-dielectric patterns with metal raised above dielectric and structures so formed 有权
标题翻译：将金属 - 电介质图案与介电材料上升的金属和如此形成的结构粘合在一起
公开(公告)号：US08617689B2
公开(公告)日：2013-12-31
申请号：US13443418
申请日：2012-04-10
申请人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
发明人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
IPC分类号： B32B3/00 , B32B15/04
CPC分类号： H01L24/05 , B23K20/023 , B23K20/233 , B23K20/24 , B23K2101/42 , H01L24/03 , H01L24/08 , H01L24/12 , H01L24/80 , H01L2224/0381 , H01L2224/03845 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/08147 , H01L2224/08148 , H01L2224/80203 , H01L2224/80345 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/80986 , H01L2924/14 , H01L2924/1461 , Y10T428/24479 , Y10T428/24521 , Y10T428/24545 , Y10T428/24612 , Y10T428/31678 , H01L2924/00012 , H01L2924/0001 , H01L2924/00
摘要： Bonding of substrates including metal-dielectric patterns on a surface with the metal raised above the dielectric, as well as related structures, are disclosed. One method includes providing a first substrate having a metal-dielectric pattern on a surface thereof; providing a second substrate having a metal-dielectric pattern on a surface thereof; performing a process resulting in the metal being raised above the dielectric; cleaning the metal; and bonding the first substrate to the second substrate. A related structure is also disclosed. The bonding of raised metal provides a strong bonding medium, and good electrical and thermal connections enabling creation of three dimensional integrated structures with enhanced functionality.
摘要翻译：公开了包括金属电介质图案在表面上与在电介质上方凸起的金属以及相关结构的接合。一种方法包括在其表面上提供具有金属 - 电介质图案的第一基板; 提供在其表面上具有金属 - 电介质图案的第二基板; 执行导致金属在电介质上方升高的过程; 清洗金属; 以及将所述第一基板接合到所述第二基板。还公开了相关的结构。凸起金属的结合提供了强大的粘合介质，以及良好的电气和热连接，能够创建具有增强功能的三维集成结构。

4. 发明申请

US20090101882A1 Programmable Via Devices 有权
标题翻译：可编程通过器件
公开(公告)号：US20090101882A1
公开(公告)日：2009-04-23
申请号：US11874582
申请日：2007-10-18
申请人： Kuan-Neng Chen , Sampath Purushothaman
发明人： Kuan-Neng Chen , Sampath Purushothaman
IPC分类号： H01L45/00
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/1683
摘要： A device comprises a heater, a dielectric layer, a phase-change element, and a capping layer. The dielectric layer is disposed at least partially on the heater and defines an opening having a lower portion and an upper portion. The phase-change element occupies the lower portion of the opening and is in thermal contact with the heater. The capping layer overlies the phase-change element and occupies the upper portion of the opening. At least a fraction of the phase-change element is operative to change between lower and higher electrical resistance states in response to an application of an electrical signal to the heater.
摘要翻译：装置包括加热器，电介质层，相变元件和封盖层。电介质层至少部分地设置在加热器上并限定具有下部和上部的开口。相变元件占据开口的下部并与加热器热接触。封盖层覆盖相变元件并占据开口的上部。响应于向加热器施加电信号，相变元件的至少一部分可操作以在较低和较高的电阻状态之间改变。

5. 发明授权

US08525144B2 Programmable via devices 失效
标题翻译：可通过设备进行编程
公开(公告)号：US08525144B2
公开(公告)日：2013-09-03
申请号：US12511662
申请日：2009-07-29
申请人： Kuan-Neng Chen , Sampath Purushothaman
发明人： Kuan-Neng Chen , Sampath Purushothaman
IPC分类号： H01L29/02
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/1683
摘要： A device comprises a heater, a dielectric layer, a phase-change element, and a capping layer. The dielectric layer is disposed at least partially on the heater and defines an opening having a lower portion and an upper portion. The phase-change element occupies the lower portion of the opening and is in thermal contact with the heater. The capping layer overlies the phase-change element and occupies the upper portion of the opening. At least a fraction of the phase-change element is operative to change between lower and higher electrical resistance states in response to an application of an electrical signal to the heater.
摘要翻译：装置包括加热器，电介质层，相变元件和封盖层。电介质层至少部分地设置在加热器上并限定具有下部和上部的开口。相变元件占据开口的下部并与加热器热接触。封盖层覆盖相变元件并占据开口的上部。响应于向加热器施加电信号，相变元件的至少一部分可操作以在较低和较高的电阻状态之间改变。

6. 发明授权

US08241995B2 Bonding of substrates including metal-dielectric patterns with metal raised above dielectric 有权
标题翻译：将金属 - 电介质图案与介于电介质上方的金属结合在一起
公开(公告)号：US08241995B2
公开(公告)日：2012-08-14
申请号：US11532599
申请日：2006-09-18
申请人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
发明人： Kuan-Neng Chen , Bruce K. Furman , Sampath Purushothaman , David L. Rath , Anna W. Topol , Cornelia K. Tsang
IPC分类号： H01L21/30
CPC分类号： H01L24/05 , B23K20/023 , B23K20/233 , B23K20/24 , B23K2101/42 , H01L24/03 , H01L24/08 , H01L24/12 , H01L24/80 , H01L2224/0381 , H01L2224/03845 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/08147 , H01L2224/08148 , H01L2224/80203 , H01L2224/80345 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948 , H01L2224/80986 , H01L2924/14 , H01L2924/1461 , Y10T428/24479 , Y10T428/24521 , Y10T428/24545 , Y10T428/24612 , Y10T428/31678 , H01L2924/00012 , H01L2924/0001 , H01L2924/00
摘要： Bonding of substrates including metal-dielectric patterns on a surface with the metal raised above the dielectric is disclosed. One method includes providing a first substrate having a metal-dielectric pattern on a surface thereof; providing a second substrate having a metal-dielectric pattern on a surface thereof; performing a process resulting in the metal being raised above the dielectric; cleaning the metal; and bonding the first substrate to the second substrate. A related structure is also disclosed. The bonding of raised metal provides a strong bonding medium, and good electrical and thermal connections enabling creation of three dimensional integrated structures with enhanced functionality.
摘要翻译：公开了包括金属介电图案在衬底上的金属与在电介质上方凸起的金属的结合。一种方法包括在其表面上提供具有金属 - 电介质图案的第一基板; 提供在其表面上具有金属 - 电介质图案的第二基板; 执行导致金属在电介质上方升高的过程; 清洗金属; 以及将所述第一基板接合到所述第二基板。还公开了相关的结构。凸起金属的结合提供了强大的粘合介质，以及良好的电气和热连接，能够创建具有增强功能的三维集成结构。

7. 发明申请

US20090305460A1 Programmable Via Devices with Air Gap Isolation 有权
标题翻译：具有空气间隙隔离的可编程通孔器件
公开(公告)号：US20090305460A1
公开(公告)日：2009-12-10
申请号：US12544964
申请日：2009-08-20
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

8. 发明申请

US20090033360A1 PROGRAMMABLE VIA DEVICES WITH AIR GAP ISOLATION 有权
标题翻译：可通过具有空气隔离的装置进行编程
公开(公告)号：US20090033360A1
公开(公告)日：2009-02-05
申请号：US11833354
申请日：2007-08-03
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H03K19/177 , H01L45/00
CPC分类号： H01L45/06 , H01L28/20 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 第一介电层上的加热器; 将所述加热器的至少一部分与所述第一介电层分开的气隙; 覆盖所述加热器的至少一部分的所述第一介电层上的隔离层; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

9. 发明申请

US20090033358A1 PROGRAMMABLE VIA DEVICES IN BACK END OF LINE LEVEL 有权
标题翻译：通过线路后端的设备可编程
公开(公告)号：US20090033358A1
公开(公告)日：2009-02-05
申请号：US11833321
申请日：2007-08-03
申请人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
发明人： Kuan-Neng Chen , Lia Krusin-Elbaum , Dennis M. Newns , Sampath Purushothaman
IPC分类号： H01L45/00 , H03K19/177
CPC分类号： H01L28/65 , H01L28/20 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1683 , Y10S977/754
摘要： Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap.
摘要翻译：提供可编程的器件及其制造方法。在一个方面，提供了可编程通路装置。可编程通孔装置包括第一介电层; 在所述第一介电层上方的至少一个隔离层; 隔离层内的加热器; 在所述隔离层的与所述第一介电层相对的一侧上的覆盖层; 至少一个可编程通道，其延伸穿过所述封盖层和所述隔离层的至少一部分并与所述加热器接触，所述可编程通孔包括至少一个相变材料; 可编程通孔上的导电盖; 在覆盖层的与隔离层相对的一侧上的第二电介质层; 第一导电通孔和第二导电通孔，每个延伸穿过第二介电层，封盖层和至少一部分隔离层并与加热器接触; 以及延伸穿过所述第二介电层并与所述导电盖接触的第三导电通孔。

10. 发明授权

US08389967B2 Programmable via devices 有权
公开(公告)号：US08389967B2
公开(公告)日：2013-03-05
申请号：US11874582
申请日：2007-10-18
申请人： Kuan-Neng Chen , Sampath Purushothaman
发明人： Kuan-Neng Chen , Sampath Purushothaman
IPC分类号： H01L29/02
CPC分类号： H01L45/122 , H01L45/06 , H01L45/1206 , H01L45/1286 , H01L45/144 , H01L45/1683
摘要： A device comprises a heater, a dielectric layer, a phase-change element, and a capping layer. The dielectric layer is disposed at least partially on the heater and defines an opening having a lower portion and an upper portion. The phase-change element occupies the lower portion of the opening and is in thermal contact with the heater. The capping layer overlies the phase-change element and occupies the upper portion of the opening. At least a fraction of the phase-change element is operative to change between lower and higher electrical resistance states in response to an application of an electrical signal to the heater.

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