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1. 发明授权

US5700581A Solvent-free epoxy based adhesives for semiconductor chip attachment and process 失效
标题翻译：无溶剂环氧基粘合剂用于半导体芯片的附着和工艺
公开(公告)号：US5700581A
公开(公告)日：1997-12-23
申请号：US670463
申请日：1996-06-26
申请人： Krishna G. Sachdev , Michael Berger , Mark S. Chace
发明人： Krishna G. Sachdev , Michael Berger , Mark S. Chace
IPC分类号： C08G59/30 , C08G59/62 , C09J163/00 , H01L21/52 , H01L21/58 , B32B9/04
CPC分类号： H01L24/83 , C08G59/306 , C09J163/00 , H01L24/29 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29386 , H01L2224/29387 , H01L2224/8319 , H01L2224/8385 , H01L2924/00013 , H01L2924/01004 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15787 , Y10T428/31663
摘要： The present invention discloses chip (die) bond adhesive formulations preferably comprising a siloxane containing epoxide preferably a diglycidyl ether derivative, an anhydride curing additive which is soluble in the epoxide without the use of a solvent, and, optionally comprising, and oligomeric/polymeric co-additive of the type poly(alkylacrylate or -methacrylate), in conjunction with thermal and electrically conductive fillers and conventional co-catalysts used for curing epoxy systems to provide reworkable epoxy adhesives. Also disclosed are adhesive formulations comprising a siloxane containing epoxide and a hydroxybenzophenone curing additive which is soluble in the epoxide without the use of a solvent. The chips can be bonded to the substrate by conventional heating and curing techniques. With epoxy adhesive compositions comprising polyacrylate additives, the die bonded assembly can be reworked by heating the assembly to about 180.degree. C. to 250.degree. C. removing the chip, and rebonding a new chip on the same surface without any effect on the shear strength for die bonded on to gold, copper, silver or a ceramic die pad. Die shear strength using the adhesives remains unchanged when exposed to thermal shock involving -65.degree. C. to +150.degree. C. excursions, and HAST test at 130.degree. C. /85 percent RH (Relative Humidity) or 85.degree. C./85% RH. A method is also provided for using the adhesives to make electronic component assemblies.
摘要翻译：本发明公开了优选包含环氧化物的硅氧烷优选二缩水甘油醚衍生物的芯片（模具）粘合剂制剂，可溶于环氧化物而不使用溶剂的酸酐固化添加剂，以及任选包含低聚物/聚合物共聚物（丙烯酸烷基酯或甲基丙烯酸烷基酯），以及用于固化环氧树脂体系以提供可再加工的环氧粘合剂的热导电填料和常规助催化剂。还公开了包含含有环氧化物的硅氧烷和可溶于环氧化物而不使用溶剂的羟基二苯甲酮固化添加剂的粘合剂制剂。芯片可以通过常规的加热和固化技术结合到基底上。使用包含聚丙烯酸酯添加剂的环氧粘合剂组合物，可以通过将组件加热至约180℃至250℃来重新加工模具接合组件，去除芯片，并在同一表面上重新粘接新的芯片，而不影响剪切强度用于裸焊接在金，铜，银或陶瓷芯片上。当暴露于涉及-65℃至+ 150℃偏移的热冲击时，使用粘合剂的模头剪切强度保持不变，并且在130℃/ 85％RH（相对湿度）或85℃/ 85℃下进行HAST测试％RH。还提供了一种使用粘合剂来制造电子部件组件的方法。

2. 发明授权

US4692205A Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings 失效
标题翻译：含硅聚酰亚胺作为氧蚀刻停止和双电介质涂层
公开(公告)号：US4692205A
公开(公告)日：1987-09-08
申请号：US824893
申请日：1986-01-31
申请人： Krishna G. Sachdev , Ranee W. Kwong , Mani R. Gupta , Mark S. Chace , Harbans S. Sachdev
发明人： Krishna G. Sachdev , Ranee W. Kwong , Mani R. Gupta , Mark S. Chace , Harbans S. Sachdev
IPC分类号： H01L21/302 , G03F7/075 , G03F7/09 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06 , B29C37/00
CPC分类号： G03F7/094 , G03F7/0757 , H01L21/0272 , H01L21/31138 , H01L21/3121 , H01L21/7688 , H01L21/76885 , Y10S428/901 , Y10S438/95 , Y10S438/97 , Y10T29/49155 , Y10T428/12396 , Y10T428/12528 , Y10T428/31721
摘要： The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.
摘要翻译：描述了在制造多层金属结构中使用含硅聚酰亚胺作为金属剥离工艺中的氧蚀刻阻挡层和作为氧蚀刻停止。实际上，将剥离层施加在基底上，随后是一层含硅聚酰亚胺和一层光致抗蚀剂。光致抗蚀剂被光刻图案化，并且使用CF 4 / O 2气体混合物通过反应离子蚀刻将显影的图像转移到含硅聚酰亚胺层中。在使用氧的反应离子蚀刻工艺中将图案转移到剥离层。随后的毯式金属蒸发，随后去除剥离模板，导致基材上所需的金属图案。在替代实施例中，含硅聚酰亚胺可以掺杂光活性化合物，减少了在顶部上分离的光致抗蚀剂成像层的需要。

3. 发明授权

US07964542B2 Enhanced thermo-oxidative stability thermal interface compositions and use thereof in microelectronics assembly 有权
标题翻译：增强的热氧化稳定性热界面组合物及其在微电子组件中的应用
公开(公告)号：US07964542B2
公开(公告)日：2011-06-21
申请号：US11330922
申请日：2006-01-12
申请人： Krishna G. Sachdev , Harbans Singh Sachdev, legal representative , Mark S. Chace , Normand Cote , David L. Gardell , Jeffrey D. Gelorme , Sushumna Iruvanti , G. John Lawson , Tuknekah M. Noble
发明人： Krishna G. Sachdev , Mark S. Chace , Normand Cote , David L. Gardell , Jeffrey D. Gelorme , Sushumna Iruvanti , G. John Lawson , Tuknekah M. Noble
IPC分类号： C10M141/10 , C10M137/04 , C10M129/68
CPC分类号： C10M129/10 , C09K5/10 , C10M137/02 , C10M2205/0285 , C10M2207/024 , C10M2207/026 , C10M2215/064 , C10M2223/049 , C10N2230/08 , C10N2230/10 , C10N2240/201
摘要： Liquid compositions containing a specific hindered phenol or a hindered phenol in combination with an aromatic phosphite are provided which are used as a thermal interface between a heatsink and a chip during a test procedure for electronic components which compositions enhance the thermal conductivity between the heatsink and the chip, are easily removed from the heatsink and the chip after the test procedure without any deleterious residue and which allow the use of high temperatures for extended periods during the test procedure without any significant degradation of the composition. A method for using the compositions in electronic component test procedures such as burn-in procedures is also provided.
摘要翻译：提供了含有特定受阻酚或受阻酚与芳族亚磷酸酯组合的液体组合物，其用于在电子部件的测试过程期间用作散热器和芯片之间的热界面，该组合物增强了散热器和芯片，在测试程序之后容易地从散热器和芯片上移除而没有任何有害的残留物，并且允许在测试过程中长时间使用高温而没有组合物的任何显着降解。还提供了一种在诸如老化程序的电子部件测试程序中使用组合物的方法。

4. 发明授权

US08133805B2 Methods for forming dense dielectric layer over porous dielectrics 有权
标题翻译：在多孔电介质上形成致密介电层的方法
公开(公告)号：US08133805B2
公开(公告)日：2012-03-13
申请号：US12569077
申请日：2009-09-29
申请人： Christos D. Dimitrakopoulos , Mark S. Chace
发明人： Christos D. Dimitrakopoulos , Mark S. Chace
IPC分类号： H01L21/44
CPC分类号： H01L21/76814 , H01L21/3105 , H01L21/31058 , H01L21/76808 , H01L21/76825 , H01L21/76831 , H01L21/76835
摘要： Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface.
摘要翻译：公开了在具有超低介电常数的多孔层间电介质中的开口表面上形成致密介电层的方法。本公开提供了将开口的侧壁表面和底表面暴露于多个基本上平行的紫外线（UV）辐射线的方法，以形成在侧壁表面和底表面上具有基本均匀厚度的致密介电层。

5. 发明授权

US07808099B2 Liquid thermal interface having mixture of linearly structured polymer doped crosslinked networks and related method 失效
标题翻译：具有线性结构聚合物掺杂交联网络混合物的液体热界面及相关方法
公开(公告)号：US07808099B2
公开(公告)日：2010-10-05
申请号：US12115809
申请日：2008-05-06
申请人： Randall J. Bertrand , Mark S. Chace , David L. Gardell , George J. Lawson , Yvonne Morris , Charles L. Reynolds , Jiali Wu
发明人： Randall J. Bertrand , Mark S. Chace , David L. Gardell , George J. Lawson , Yvonne Morris , Charles L. Reynolds , Jiali Wu
IPC分类号： H01L23/10
CPC分类号： C08L83/04 , C08G77/12 , C08G77/20 , C08L83/00
摘要： A liquid thermal interface (LTI) including a mixture of a linearly structured polymer doped with crosslinked networks and related method are presented. The LTI exhibits reduced liquid polymer macromolecule mobility, and thus increased surface tension. An embodiment of the method includes mixing a crosslinker with a linearly structured polymer to form a mixture, wherein the crosslinker includes a base agent including a vinyl-terminated or branched polydimethylsiloxane, and a curing agent including a hydrogen-terminated polydimethylsiloxane; and curing the mixture. The crosslinker functions as cages to block linear or branched linear macromolecules and prevents them from sliding into each other, thus increasing surface tension of the resulting LTI.
摘要翻译：提出了包含掺杂有交联网络的线性结构聚合物的混合物的液体热界面（LTI）和相关方法。 LTI表现出降低的液体聚合物大分子迁移率，从而增加表面张力。该方法的一个实施方案包括将交联剂与线形结构聚合物混合以形成混合物，其中交联剂包括包含乙烯基封端或支化聚二甲基硅氧烷的基础试剂和包含氢封端的聚二甲基硅氧烷的固化剂; 并固化混合物。交联剂用作笼子以阻断线性或分支的线性大分子并防止它们彼此滑动，从而增加所得LTI的表面张力。

6. 发明授权

US06495825B1 Apparatus for photo exposure of materials with subsequent capturing of volatiles for analysis 失效
标题翻译：用于随后拍摄挥发物进行分析的材料的曝光装置
公开(公告)号：US06495825B1
公开(公告)日：2002-12-17
申请号：US09469373
申请日：1999-12-22
申请人： Mark S. Chace , John E. Darney , David R. Medeiros , Wayne M. Moreau , Alfred O. Passano, Jr.
发明人： Mark S. Chace , John E. Darney , David R. Medeiros , Wayne M. Moreau , Alfred O. Passano, Jr.
IPC分类号： H01J4900
CPC分类号： H01J49/40 , G01N21/3504 , G01N2021/3595
摘要： Real-time analysis of output volatiles upon UV exposure is achieved using a laboratory scale apparatus. The methods and apparatus use external or internal radiation sources, especially broad band external UV radiation. The apparatus and methods of the invention are especially useful in the analysis and screening of photoresist materials. The apparatus preferably uses FTIR or MS analysis.
摘要翻译：使用实验室规模的仪器实现紫外线曝光时输出挥发物的实时分析。方法和设备使用外部或内部辐射源，特别是宽带外部紫外线辐射。本发明的装置和方法在光致抗蚀剂材料的分析和筛选中特别有用。该装置优选使用FTIR或MS分析。

7. 发明申请

US20100012858A1 METHODS FOR FORMING DENSE DIELECTRIC LAYER OVER POROUS DIELECTRICS 有权
标题翻译：在多孔介质上形成DENSE电介质层的方法
公开(公告)号：US20100012858A1
公开(公告)日：2010-01-21
申请号：US12569077
申请日：2009-09-29
申请人： Christos D. Dimitrakopoulos , Mark S. Chace
发明人： Christos D. Dimitrakopoulos , Mark S. Chace
IPC分类号： B01J19/12
CPC分类号： H01L21/76814 , H01L21/3105 , H01L21/31058 , H01L21/76808 , H01L21/76825 , H01L21/76831 , H01L21/76835
摘要： Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface.
摘要翻译：公开了在具有超低介电常数的多孔层间电介质中的开口表面上形成致密介电层的方法。本公开提供了将开口的侧壁表面和底表面暴露于多个基本上平行的紫外线（UV）辐射线的方法，以形成在侧壁表面和底表面上具有基本均匀厚度的致密介电层。

8. 发明申请

US20090281254A1 LIQUID THERMAL INTERFACE HAVING MIXTURE OF LINEARLY STRUCTURED POLYMER DOPED CROSSLINKED NETWORKS AND RELATED METHOD 失效
标题翻译：具有线性结构聚合物掺杂交联网络的混合物的液体热界面及相关方法
公开(公告)号：US20090281254A1
公开(公告)日：2009-11-12
申请号：US12115809
申请日：2008-05-06
申请人： Randall J. Bertrand , Mark S. Chace , David L. Gardell , George J. Lawson , Yvonne Morris , Charles L. Reynolds , Jiali Wu
发明人： Randall J. Bertrand , Mark S. Chace , David L. Gardell , George J. Lawson , Yvonne Morris , Charles L. Reynolds , Jiali Wu
IPC分类号： C08G77/38
CPC分类号： C08L83/04 , C08G77/12 , C08G77/20 , C08L83/00
摘要： A liquid thermal interface (LTI) including a mixture of a linearly structured polymer doped with crosslinked networks and related method are presented. The LTI exhibits reduced liquid polymer macromolecule mobility, and thus increased surface tension. An embodiment of the method includes mixing a crosslinker with a linearly structured polymer to form a mixture, wherein the crosslinker includes a base agent including a vinyl-terminated or branched polydimethylsiloxane, and a curing agent including a hydrogen-terminated polydimethylsiloxane; and curing the mixture. The crosslinker functions as cages to block linear or branched linear macromolecules and prevents them from sliding into each other, thus increasing surface tension of the resulting LTI.
摘要翻译：提出了包含掺杂有交联网络的线性结构聚合物的混合物的液体热界面（LTI）和相关方法。 LTI表现出降低的液体聚合物大分子迁移率，从而增加表面张力。该方法的一个实施方案包括将交联剂与线形结构聚合物混合以形成混合物，其中交联剂包括包含乙烯基封端或支化聚二甲基硅氧烷的基础试剂和包含氢封端的聚二甲基硅氧烷的固化剂; 并固化混合物。交联剂用作笼子以阻断线性或分支的线性大分子并防止它们彼此滑动，从而增加所得LTI的表面张力。

9. 发明授权

US5553379A Malleable penile prosthesis 失效
标题翻译：可塑性阴茎假体
公开(公告)号：US5553379A
公开(公告)日：1996-09-10
申请号：US502614
申请日：1995-07-13
申请人： John W. Westrum, Jr. , Mark S. Chace , Charles C. Kuyava
发明人： John W. Westrum, Jr. , Mark S. Chace , Charles C. Kuyava
IPC分类号： A61F2/26
CPC分类号： A61F2/26 , Y10S623/901 , Y10T29/4987 , Y10T29/49927 , Y10T29/49954
摘要： A malleable penile prosthesis adapted to be implanted in a corpus cavemosum of a penis comprising an elongated core which is bendable about its longitudinal axis with the capability of holding the configuration to which it is bent and is substantially rigid when in the unbent straight configuration, a sleeve of braided biocompatible material, having an inner surface and an outer surface, enveloping the core with the inner surface of the sleeve in contact with the core and the sleeve and core being accommodated within an outer tube of elastomeric material, which tube has a substantially rounded smooth outer surface and an inner surface having a profile formed of alternate grooves and ribs in a substantially helical arrangement. A method of forming a malleable prosthesis is also disclosed.
摘要翻译：一种适于植入阴茎的阴茎假体中的可延展的阴茎假体，包括细长的芯，该芯可以围绕其纵向轴线弯曲，具有保持其弯曲的构型的能力，并且当处于非直立构型时基本上是刚性的，具有内表面和外表面的编织生物相容性材料的套管，其包围芯体，其中套筒的内表面与芯接触，并且套筒和芯体容纳在弹性体材料的外管内，该管具有基本上圆形光滑的外表面和内表面，其具有由基本螺旋排列的交替的凹槽和肋形成的轮廓。还公开了一种形成可延展假体的方法。

10. 发明申请

US20080242118A1 METHODS FOR FORMING DENSE DIELECTRIC LAYER OVER POROUS DIELECTRICS 审中-公开
标题翻译：在多孔介质上形成DENSE电介质层的方法
公开(公告)号：US20080242118A1
公开(公告)日：2008-10-02
申请号：US11693271
申请日：2007-03-29
申请人： Christos D. Dimitrakopoulos , Mark S. Chace
发明人： Christos D. Dimitrakopoulos , Mark S. Chace
IPC分类号： H01L21/00
CPC分类号： H01L21/76814 , H01L21/3105 , H01L21/31058 , H01L21/76808 , H01L21/76825 , H01L21/76831 , H01L21/76835
摘要： Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface.
摘要翻译：公开了在具有超低介电常数的多孔层间电介质中的开口表面上形成致密介电层的方法。本公开提供了将开口的侧壁表面和底表面暴露于多个基本上平行的紫外线（UV）辐射线的方法，以形成在侧壁表面和底表面上具有基本均匀厚度的致密介电层。

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