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1. 发明授权

US4692205A Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings 失效
标题翻译：含硅聚酰亚胺作为氧蚀刻停止和双电介质涂层
公开(公告)号：US4692205A
公开(公告)日：1987-09-08
申请号：US824893
申请日：1986-01-31
申请人： Krishna G. Sachdev , Ranee W. Kwong , Mani R. Gupta , Mark S. Chace , Harbans S. Sachdev
发明人： Krishna G. Sachdev , Ranee W. Kwong , Mani R. Gupta , Mark S. Chace , Harbans S. Sachdev
IPC分类号： H01L21/302 , G03F7/075 , G03F7/09 , H01L21/027 , H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06 , B29C37/00
CPC分类号： G03F7/094 , G03F7/0757 , H01L21/0272 , H01L21/31138 , H01L21/3121 , H01L21/7688 , H01L21/76885 , Y10S428/901 , Y10S438/95 , Y10S438/97 , Y10T29/49155 , Y10T428/12396 , Y10T428/12528 , Y10T428/31721
摘要： The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.
摘要翻译：描述了在制造多层金属结构中使用含硅聚酰亚胺作为金属剥离工艺中的氧蚀刻阻挡层和作为氧蚀刻停止。实际上，将剥离层施加在基底上，随后是一层含硅聚酰亚胺和一层光致抗蚀剂。光致抗蚀剂被光刻图案化，并且使用CF 4 / O 2气体混合物通过反应离子蚀刻将显影的图像转移到含硅聚酰亚胺层中。在使用氧的反应离子蚀刻工艺中将图案转移到剥离层。随后的毯式金属蒸发，随后去除剥离模板，导致基材上所需的金属图案。在替代实施例中，含硅聚酰亚胺可以掺杂光活性化合物，减少了在顶部上分离的光致抗蚀剂成像层的需要。

2. 发明授权

US5115090A Viscosity stable, essentially gel-free polyamic acid compositions 失效
标题翻译：粘度稳定，基本无凝胶聚氨酯组合物
公开(公告)号：US5115090A
公开(公告)日：1992-05-19
申请号：US503401
申请日：1990-03-30
申请人： Krishna G. Sachdev , John P. Hummel , Ranee W. Kwong , Robert N. Lang , Leo L. Linehan , Harbans S. Sachdev
发明人： Krishna G. Sachdev , John P. Hummel , Ranee W. Kwong , Robert N. Lang , Leo L. Linehan , Harbans S. Sachdev
IPC分类号： C08G73/10 , C08L79/08 , H01L21/312 , H01L23/29 , H01L23/498 , H01L23/532 , H05K1/00
CPC分类号： H01L23/5329 , C08G73/1014 , H01L23/293 , H01L23/49894 , H01L2924/0002 , H05K3/4676
摘要： Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants.Methods for improved adhesion of polyimides are also disclosed.

3. 发明授权

US5114826A Photosensitive polyimide compositions 失效
标题翻译：感光性聚酰亚胺组合物
公开(公告)号：US5114826A
公开(公告)日：1992-05-19
申请号：US458130
申请日：1989-12-28
申请人： Ranee W. Kwong , Harbans S. Sachdev , Krishna G. Sachdev
发明人： Ranee W. Kwong , Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： C08F2/46 , C08G73/10 , C08K5/23 , C08K5/28 , C08L79/08 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/26 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0758 , G03F7/0387 , G03F7/039 , H01L2224/11334
摘要： New photosensitive polyimide compositions and processes of using the same in the fabrication of electronic components are provided. These compositions are comprised of ##STR1## containing polyamic acids and/or the corresponding hydroxy-polyamic esters, or hydroxypolyimides and a photoactive component as an additive or as covalently bonded functionality on the polymer chain. These compositions provide positive or negative patterning options and may be used as conventional resist materials, as imageable dielectric or passivating layers, as high Tg ion implant masks or as imageable lift-off layers in the fabrication of multilevel metal structures.

4. 发明授权

US4665006A Positive resist system having high resistance to oxygen reactive ion etching 失效
标题翻译：具有高耐氧反应离子蚀刻性的正抗蚀剂体系
公开(公告)号：US4665006A
公开(公告)日：1987-05-12
申请号：US806597
申请日：1985-12-09
申请人： Krishna G. Sachdev , Ranee W. Kwong , Mahmoud M. Khojasteh , Harbans S. Sachdev
发明人： Krishna G. Sachdev , Ranee W. Kwong , Mahmoud M. Khojasteh , Harbans S. Sachdev
IPC分类号： G03F7/20 , G03F7/039 , G03F7/075 , H01L21/027 , G03C5/16 , G03C1/495 , G03F7/26
CPC分类号： G03F7/0757 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.
摘要翻译：公开了一种光致抗蚀剂组合物，其包含具有由鎓盐敏化的有机聚硅氧烷部分的可辐射可分裂聚合物体系。有用的含有机聚硅氧烷的聚合物包括聚硅氧烷 - 聚碳酸酯嵌段共聚物和聚有机硅氧烷聚芳酯。由光致抗蚀剂组合物制成的抗蚀剂膜显示出高灵敏度，高热稳定性和耐氧反应离子蚀刻性能，这使得它们对于干蚀刻工艺是可取的，以实现亚微米分辨率。

5. 发明授权

US4599243A Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效
标题翻译：使用等离子体聚合的有机硅膜制造剥离掩模
公开(公告)号：US4599243A
公开(公告)日：1986-07-08
申请号：US668361
申请日：1984-11-05
申请人： Harbans S. Sachdev , Krishna G. Sachdev
发明人： Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： G03F7/09 , B05D3/06
CPC分类号： G03F7/094 , Y10S438/951
摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.
摘要翻译：通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层，在此期间，等离子体沉积膜用作氧气屏障。最终金属图案通过金属化和剥离步骤形成。

6. 发明授权

US4562091A Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks 失效
标题翻译：使用等离子体聚合硅胶膜制造剥离掩模
公开(公告)号：US4562091A
公开(公告)日：1985-12-31
申请号：US668360
申请日：1984-12-18
申请人： Harbans S. Sachdev , Krishna G. Sachdev
发明人： Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： G03F7/09 , B05D3/06
CPC分类号： G03F7/094
摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.
摘要翻译：通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层，在此期间，等离子体沉积膜用作氧气屏障。最终金属图案通过金属化和剥离步骤形成。

7. 发明授权

US4493855A Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效
公开(公告)号：US4493855A
公开(公告)日：1985-01-15
申请号：US452549
申请日：1982-12-23
申请人： Harbans S. Sachdev , Krishna G. Sachdev
发明人： Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： H01L21/302 , G03F7/09 , H01L21/3065 , H01L21/3205 , B05D3/06
CPC分类号： G03F7/094
摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

8. 发明授权

US5399462A Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane 失效
标题翻译：使用包含感光性聚倍半硅氧烷的双层抗蚀剂组合物通过光学光刻形成半微米图案的方法
公开(公告)号：US5399462A
公开(公告)日：1995-03-21
申请号：US274571
申请日：1994-07-13
申请人： Krishna G. Sachdev , Premlatha Jagannathan , Robert N. Lang , Harbans S. Sachdev , Ratnam Sooriyakumaran , Joel R. Whitaker
发明人： Krishna G. Sachdev , Premlatha Jagannathan , Robert N. Lang , Harbans S. Sachdev , Ratnam Sooriyakumaran , Joel R. Whitaker
IPC分类号： G03F7/022 , C08G77/388 , G03F7/027 , G03F7/037 , G03F7/039 , G03F7/075 , G03F7/09 , G03F7/26 , H01L21/027 , H01L21/30 , G03F7/30 , G03F7/023 , G03F7/36
CPC分类号： C08G77/388 , G03F7/0757 , G03F7/091 , G03F7/094
摘要： A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.
摘要翻译：提供了一种在双层抗蚀剂组合物中形成具有小于半微米宽度的微光刻浮雕图像的方法。抗蚀剂组合物包含具有高的光密度和类似于覆盖抗蚀剂的折射率的折射率的单一组分，含硅光可成像层和聚合物底层。该方法提供了使用i线（365nm）或深紫外（170至300nm）光源在顶层中形成浮雕图像，随后将浮雕图像的O2 RIE转移到聚合物底层中。

9. 发明授权

US4525722A Chemical heat amplification in thermal transfer printing 失效
标题翻译：热转印中的化学热放大
公开(公告)号：US4525722A
公开(公告)日：1985-06-25
申请号：US582694
申请日：1984-02-23
申请人： Krishna G. Sachdev , Harbans S. Sachdev , Ari Aviram , Mark A. Wizner
发明人： Krishna G. Sachdev , Harbans S. Sachdev , Ari Aviram , Mark A. Wizner
IPC分类号： B41M5/392 , B41J31/00 , B41J31/02 , B41M5/26 , G01D15/10
CPC分类号： B41M5/392 , Y10S428/913 , Y10S428/914 , Y10S430/146
摘要： Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and specifically hydrazone derivatives which are substantially colorless, and have a molecular weight in the approximate range 150-650.
摘要翻译：在热转印中提供化学热放大，其中通过放热反应提供熔融和将油墨从带中的固体可熔层转移到接收介质所需的一些热。这种化学反应是由于位于油墨层中的放热材料或油墨支承带的另一层。放热反应减少必须通过电气或电磁波施加的输入功率的量。合适的放热材料的实例是在油墨的操作温度范围内提供热量，特别是基本上无色的分子量为150-650的腙衍生物。

10. 发明授权

US4519872A Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes 失效
标题翻译：在制造多层金属工艺的剥离结构中使用可解聚聚合物
公开(公告)号：US4519872A
公开(公告)日：1985-05-28
申请号：US619516
申请日：1984-06-11
申请人： Herbert R. Anderson, Jr. , Harbans S. Sachdev , Krishna G. Sachdev
发明人： Herbert R. Anderson, Jr. , Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： H01L21/3205 , G03F7/039 , H01L21/027 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/768 , H05K3/04 , B44C1/22 , B29C17/08 , C03C15/00 , C03C25/06
CPC分类号： H01L21/7688 , G03F7/039 , H01L21/0272 , H05K3/048 , Y10S438/951
摘要： An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.
摘要翻译：通过采用由在热或辐射的影响下经历清洁解聚的聚合物形成的剥离层，并且允许快速和无残留地释放“消耗性掩模”，改进了用于多层金属结构在集成电路制造中的剥离过程，。通过将本发明的剥离层施加在固化的聚合物膜上或预先沉积在有机或无机基底上的氧RIE阻挡层上，随后再涂覆有辐射敏感的另一个屏障，形成嵌入式互连冶金系统抗蚀剂层。在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的溅射蚀刻将图像复制到屏障中，随后通过橡皮布金属蒸发随后通过氧反应离子蚀刻沉积到基底中。最后通过在剥离层的解聚温度下进行短暂热处理，并进行短暂的溶剂浸泡。

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