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1. 发明专利

JP2008103686A Printed dopant layer 有权
标题翻译：印花ANT层
公开(公告)号：JP2008103686A
公开(公告)日：2008-05-01
申请号：JP2007211891
申请日：2007-08-15
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： ARVIND KAMATH , CLEEVES JAMES MONTAGUE , ROCKENBERGER JOERG , SMITH PATRICK , ZUERCHER FABIO
IPC分类号： H01L21/336 , H01L21/225 , H01L21/288 , H01L21/316 , H01L21/3205 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L21/2254 , H01L21/02532 , H01L21/02623 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a method of forming an electronic device such as a MOS transistor and the like wherein relatively reduced cost and time-saving processing technology is achieved. SOLUTION: The method of forming an electronic device such as a MOS transistor and the like includes the steps of forming a plurality of semiconductor islands 31, 35 on a substrate 10, printing a first dielectric layer 60 on or over a first subset 31 of the semiconductor islands, and optionally printing a second dielectric layer 65 on or over a second subset 35 of the semiconductor islands. The first dielectric layer 60 contains a first dopant, and the (optional) second dielectric layer 65 includes a second dopant different from the first dopant. The dielectric layers 60, 65, semiconductor islands 31, 35 and the substrate 10 are sufficiently annealed to diffuse the first dopant into the first subset 31 of semiconductor islands and, if present, the second dopant into the second subset 35 of semiconductor islands. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成诸如MOS晶体管等的电子器件的方法，其中实现了相对降低的成本和节省时间的处理技术。解决方案：形成诸如MOS晶体管等的电子器件的方法包括在衬底10上形成多个半导体岛31,35的步骤，在第一子集上或第一子集上印刷第一介电层60 31，并且可选地在半导体岛的第二子集35上或之上打印第二介电层65。第一介电层60包含第一掺杂剂，并且（任选的）第二介电层65包括不同于第一掺杂剂的第二掺杂剂。电介质层60,65，半导体岛31,35和衬底10被充分退火以将第一掺杂剂扩散到半导体岛的第一子集31中，如果存在，则将第二掺杂剂扩散到半导体岛的第二子集35中。版权所有（C）2008，JPO＆INPIT

2. 发明申请

WO2008045327A3 SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS 审中-公开
标题翻译：硅聚合物，聚合硅化合物的方法，以及由这种硅聚合物形成薄膜的方法
公开(公告)号：WO2008045327A3
公开(公告)日：2008-06-12
申请号：PCT/US2007021403
申请日：2007-10-04
申请人： KOVIO INC , KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
发明人： KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
IPC分类号： C07F7/04
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae Si n H 2n and Si n H 2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译：用于氢硅烷化合物的受控聚合和/或低聚反应的组合物和方法，包括通式Si _{n _{H _{2n 和Si _{n H _{2n + 2以及烷基硅烷和芳基硅烷，以产生可溶性硅聚合物作为具有低碳含量的硅膜的前体。}}}}}

3. 发明申请

WO2008045327B1 SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS 审中-公开
标题翻译：硅聚合物，聚硅氧烷化合物的方法，以及从这种硅聚合物形成薄膜的方法
公开(公告)号：WO2008045327B1
公开(公告)日：2008-09-25
申请号：PCT/US2007021403
申请日：2007-10-04
申请人： KOVIO INC , KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
发明人： KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
IPC分类号： C07F7/04
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae Si n H 2n and Si n H 2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译：含硅烷化合物的受控聚合和/或低聚化的组合物和方法，包括通式为Si H 2n H和H n H > 2n + 2 以及烷基和芳基硅烷，以产生可溶性硅聚合物作为具有低碳含量的硅膜的前体。

4. 发明公开

EP2069368A4 SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS 审中-公开
标题翻译：硅氧烷聚合物，用于硅化合物的形成薄膜从这样的硅氧烷聚合物聚合和方法
公开(公告)号：EP2069368A4
公开(公告)日：2011-06-22
申请号：EP07839301
申请日：2007-10-04
申请人： KOVIO INC
发明人： KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
IPC分类号： C08G77/60 , C09D183/16
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.

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