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1. 发明专利

JP2005051222A Composition and method for forming semiconductor and/or silicon-containing thin film and structure formed therefrom 审中-公开
标题翻译：用于形成半导体和/或含硅薄膜和其形成的结构的组合物和方法
公开(公告)号：JP2005051222A
公开(公告)日：2005-02-24
申请号：JP2004202419
申请日：2004-07-08
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： KUNZE KLAUS , HAUBRICH SCOTT , ZURCHER FABIO , RIDLEY BRENT , ROCKENBERGER JOERG
IPC分类号： B32B9/04 , B32B13/04 , C09D11/00 , H01L21/20 , H01L21/208 , H01L21/336 , H01L21/44
CPC分类号： C23C18/14 , C09D11/52 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1275 , H01L21/02532 , H01L21/02601 , H01L21/02636 , H01L29/66757 , Y10T428/24802 , Y10T428/24926 , Y10T428/31663
摘要： PROBLEM TO BE SOLVED: To provide compositions and methods for forming patterned semiconductors and patterned semiconductor thin films and/or to provide structures. SOLUTION: The composition comprises passivated semiconductor nanoparticles and at least one of first Group IVA compounds represented by the formula (AH X ) n wherein A is independently Si or Ge and/or second Group IVA compounds represented by the formula (AH X ) m (AH y R z-y ) p (ZR' w ) q , wherein each A is independently Si or Ge, each R is independently alkyl, aryl, aralkyl, halogen, BH s R" 2-s , PH s R" 2-s , AsH s R" 2-s , or AH t R" 3-t , and R" is alkyl, aryl, aralkyl, halogen or AH 3 , and Z is selected from a group of B(boron), P(phosphorus), and As(arsenic), and R' is R or H(hydrogen). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供用于形成图案化半导体和图案化半导体薄膜的组合物和方法和/或提供结构。解决方案：组合物包含钝化的半导体纳米颗粒和由式（AH X ）表示的至少一种第一组IVA化合物，其中A独立地为Si或Ge 和/或由式（AH X ）表示的第二组IVA化合物（AH X 其中每个A独立地为Si或Ge，每个R独立地为烷基，芳基，芳烷基，卤素，芳基，芳基， BH R“ 2-s ，PH R” 2-s ，AsH < / SB> R“ 2-s 或AH R” 3-t ，R“为烷基，芳基，芳烷基，卤素或AH 3 ，Z选自B（硼），P（磷）和As（砷），R'是R或H（氢）。（C）2005，JPO＆NCIPI

2. 发明专利

JP2006261664A Mos transistor with laser-patterned metal gate and method for forming the transistor 有权
标题翻译：具有激光图案的金属栅的MOS晶体管和形成晶体管的方法
公开(公告)号：JP2006261664A
公开(公告)日：2006-09-28
申请号：JP2006064769
申请日：2006-03-09
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： CHOI CRISWELL , ROCKENBERGER JOERG , J DEVIN MACKENZIE , GUDEMAN CHRISTOPHER
IPC分类号： H01L29/786 , H01L21/288 , H01L21/336 , H01L29/423 , H01L29/49
CPC分类号： H01L21/32131 , H01L21/28123 , H01L21/84 , H01L27/1292 , H01L29/66757
摘要： PROBLEM TO BE SOLVED: To provide a MOS transistor having a laser-patterned metal gate and its manufacturing method. SOLUTION: A dielectric thin film is located on an electrically functioning substrate including an inorganic semiconductor. A method of forming a layer of a metal content material thereon comprises processes of laser-patterning the metal gate from a metal content material layer, and forming a source terminal and a drain terminal within the inorganic semiconductor located near the metal gate. The transistor generally comprises the electrically functioning substrate, the dielectric thin film located on at least one part of the electrically functioning substrate, the metal gate which is located on the laser-patterned dielectric thin film, and the source terminal and the drain terminal which include doped inorganic semiconductor layers located near the metal gate. A MOS thin film transistor having a reliable electric characteristic is provided promptly, efficiency, and/or at low cost. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供具有激光图案化金属栅极的MOS晶体管及其制造方法。解决方案：电介质薄膜位于包括无机半导体的电功能衬底上。在其上形成金属含量材料层的方法包括从金属含量材料层激光图案化金属栅极的工艺，以及在位于金属栅极附近的无机半导体内形成源极端子和漏极端子的工艺。晶体管通常包括电功能衬底，位于电功能衬底的至少一部分上的电介质薄膜，位于激光图案化电介质薄膜上的金属栅极，以及源极端子和漏极端子，其包括掺杂的无机半导体层位于金属栅极附近。能够及时，高效，低成本地提供具有可靠电特性的MOS薄膜晶体管。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2008103686A Printed dopant layer 有权
标题翻译：印花ANT层
公开(公告)号：JP2008103686A
公开(公告)日：2008-05-01
申请号：JP2007211891
申请日：2007-08-15
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： ARVIND KAMATH , CLEEVES JAMES MONTAGUE , ROCKENBERGER JOERG , SMITH PATRICK , ZUERCHER FABIO
IPC分类号： H01L21/336 , H01L21/225 , H01L21/288 , H01L21/316 , H01L21/3205 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L21/2254 , H01L21/02532 , H01L21/02623 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a method of forming an electronic device such as a MOS transistor and the like wherein relatively reduced cost and time-saving processing technology is achieved. SOLUTION: The method of forming an electronic device such as a MOS transistor and the like includes the steps of forming a plurality of semiconductor islands 31, 35 on a substrate 10, printing a first dielectric layer 60 on or over a first subset 31 of the semiconductor islands, and optionally printing a second dielectric layer 65 on or over a second subset 35 of the semiconductor islands. The first dielectric layer 60 contains a first dopant, and the (optional) second dielectric layer 65 includes a second dopant different from the first dopant. The dielectric layers 60, 65, semiconductor islands 31, 35 and the substrate 10 are sufficiently annealed to diffuse the first dopant into the first subset 31 of semiconductor islands and, if present, the second dopant into the second subset 35 of semiconductor islands. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成诸如MOS晶体管等的电子器件的方法，其中实现了相对降低的成本和节省时间的处理技术。解决方案：形成诸如MOS晶体管等的电子器件的方法包括在衬底10上形成多个半导体岛31,35的步骤，在第一子集上或第一子集上印刷第一介电层60 31，并且可选地在半导体岛的第二子集35上或之上打印第二介电层65。第一介电层60包含第一掺杂剂，并且（任选的）第二介电层65包括不同于第一掺杂剂的第二掺杂剂。电介质层60,65，半导体岛31,35和衬底10被充分退火以将第一掺杂剂扩散到半导体岛的第一子集31中，如果存在，则将第二掺杂剂扩散到半导体岛的第二子集35中。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007335870A Printed, self-aligned, top gate thin film transistor 审中-公开
标题翻译：打印，自对准，顶盖薄膜晶体管
公开(公告)号：JP2007335870A
公开(公告)日：2007-12-27
申请号：JP2007155417
申请日：2007-06-12
申请人： Kovio Inc , コヴィオインコーポレイテッド
发明人： ROCKENBERGER JOERG , CLEEVES JAMES MONTAGUE , ARVIND KAMATH
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/20 , H01L21/225 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor capable of manufacturing a high-performance printed top gate TFT. SOLUTION: A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor have steps: forming a semiconductor thin film layer 2; printing a doped glass pattern 4 thereon, a gap 5 in the doped glass pattern 4 defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor 3 thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够制造高性能印刷顶栅TFT的薄膜晶体管。解决方案：自对准顶栅薄膜晶体管（TFT）和形成这种薄膜晶体管的方法具有以下步骤：形成半导体薄膜层2; 在其上印刷掺杂的玻璃图案4，在掺杂的玻璃图案4中限定TFT的沟道区的间隙5; 在沟道区域上或上方形成栅电极，栅电极在其上包括栅极电介质膜和栅极导体3; 并且将掺杂剂从掺杂的玻璃图案扩散到半导体薄膜层中。版权所有（C）2008，JPO＆INPIT

5. 发明专利

CA2606964C MOS ELECTRONIC ARTICLE SURVEILLANCE, RF AND/OR RF IDENTIFICATION TAG/DEVICE, AND METHODS FOR MAKING AND USING THE SAME 未知
公开(公告)号：CA2606964C
公开(公告)日：2013-08-13
申请号：CA2606964
申请日：2007-10-18
申请人： KOVIO INC
发明人： MACKENZIE J DEVIN , PAVATE VIKRAM , CLEEVES JAMES MONTAGUE , ROCKENBERGER JOERG , ZURCHER FABIO , GUDEMAN CHRISTOPHER , DAVIS MAX , GOOD DAN
IPC分类号： G01V15/00 , B41F5/24 , B41F7/02 , B41F15/00 , B41J2/01 , G01V3/12 , G08B13/24 , H01F37/00 , H01G4/008 , H01G4/10 , H01G4/40 , H01L21/18 , H01L21/205 , H01L21/302 , H01L29/92
摘要： A RF MOS- or nonlinear device-based surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes (a) an inductor, (b) a first capacitor plate coupled to the inductor, (c) a dielectric film on the first capacitor plate, (d) a semiconductor component on the dielectric film, and (e) a conductor that provides electrical communication between the semiconductor component and the inductor. The method of manufacture generally includes (1) depositing a semiconductor material (or precursor) on a dielectric film; (2) forming a semiconductor component from the semiconductor material/precursor; (3) forming a conductive structure at least partly on the semiconductor component; and (4) etching the electrically functional substrate to form (i) an inductor and/or (ii) a second capacitor plate. The method of use generally includes (i) causing/inducing a current in the present tag sufficient for it to generate detectable electromagnetic radiation; (ii) detecting the radiation; and optionally, (iii) selectively deactivating the tag. The present invention advantageously provides a low cost EAS / RFID tag capable of operating at MHz frequencies and in frequency division and/or frequency multiplication modes.

6. 发明专利

CA2606964A1 MOS ELECTRONIC ARTICLE SURVEILLANCE, RF AND/OR RF IDENTIFICATION TAG/DEVICE, AND METHODS FOR MAKING AND USING THE SAME 未知
公开(公告)号：CA2606964A1
公开(公告)日：2009-04-18
申请号：CA2606964
申请日：2007-10-18
申请人： KOVIO INC
发明人： MACKENZIE J DEVIN , GUDEMAN CHRISTOPHER , DAVIS MAX , GOOD DAN , CLEEVES JAMES MONTAGUE , ROCKENBERGER JOERG , ZURCHER FABIO , PAVATE VIKRAM
IPC分类号： G01V15/00 , B41F5/24 , B41F7/02 , B41F15/00 , B41J2/01 , G01V3/12 , G08B13/24 , H01F37/00 , H01G4/008 , H01G4/10 , H01G4/40 , H01L21/18 , H01L21/205 , H01L21/302 , H01L29/92
摘要： A RF MOS- or nonlinear device-based surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes (a) an inductor, (b) a first capacitor plate coupled to the inductor, (c) a dielectric film on the first capacitor plate, (d) a semiconductor component on the dielectric film, and (e) a conductor that provides electric al communication between the semiconductor component and the inductor. The method of manufacture generally includes (1) depositing a semiconductor material (or precursor) on a dielectric film; (2) forming a semiconductor component from the semiconductor material/precursor; (3) formi ng a conductive structure at least partly on the semiconductor component; and (4) etching th e electrically functional substrate to form (i) an inductor and/or (ii) a second capacitor plate. The method of use generally includes (i) causing/inducing a current in the present tag sufficient for it to generate detectable electromagnetic radiation; (ii) detecting the radiation; and optionally, (iii) selectively deactivating the tag. The present invention advantageously provides a low co st EAS / RFID tag capable of operating at MHz frequencies and in frequency division and/or frequency multiplication modes.

7. 发明申请

WO2008045327B1 SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS 审中-公开
标题翻译：硅聚合物，聚硅氧烷化合物的方法，以及从这种硅聚合物形成薄膜的方法
公开(公告)号：WO2008045327B1
公开(公告)日：2008-09-25
申请号：PCT/US2007021403
申请日：2007-10-04
申请人： KOVIO INC , KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
发明人： KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
IPC分类号： C07F7/04
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae Si n H 2n and Si n H 2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译：含硅烷化合物的受控聚合和/或低聚化的组合物和方法，包括通式为Si H 2n H和H n H > 2n + 2 以及烷基和芳基硅烷，以产生可溶性硅聚合物作为具有低碳含量的硅膜的前体。

8. 发明公开

EP2069368A4 SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS 审中-公开
标题翻译：硅氧烷聚合物，用于硅化合物的形成薄膜从这样的硅氧烷聚合物聚合和方法
公开(公告)号：EP2069368A4
公开(公告)日：2011-06-22
申请号：EP07839301
申请日：2007-10-04
申请人： KOVIO INC
发明人： KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
IPC分类号： C08G77/60 , C09D183/16
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.

9. 发明申请

WO2008137811A3 PRINT PROCESSING FOR PATTERNED CONDUCTOR, SEMICONDUCTOR AND DIELECTRIC MATERIALS 审中-公开
标题翻译：图形导体，半导体和电介质材料的印刷加工
公开(公告)号：WO2008137811A3
公开(公告)日：2009-12-30
申请号：PCT/US2008062586
申请日：2008-05-03
申请人： KOVIO INC , SCHER ERIK , KAMATH ARVIND , ROCKENBERGER JOERG , MORI IKUO , MOLESA STEVEN
发明人： SCHER ERIK , KAMATH ARVIND , ROCKENBERGER JOERG , MORI IKUO , MOLESA STEVEN
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： C09D5/24 , C09D11/101 , C09D11/322 , C09D11/36 , C09D11/54 , H01B3/02 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/28008 , H01L27/1292 , H01L29/6675 , H01L29/78696 , Y10T428/24802
摘要： Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.
摘要翻译：实施例涉及从含有材料前体的油墨印刷特征。在一些实施例中，材料包括电活性材料，例如半导体，金属或其组合。在另一个实施例中，该材料包括电介质。这些实施例提供改进的印刷工艺条件，其允许更精确地控制印刷线或其它特征的形状，轮廓和尺寸。组合物和/或方法通过增加油墨中组分的粘度和质量负荷来改善对钉扎的控制。因此，示例性方法包括在基板上以图案印刷包含材料前体和溶剂的油墨; 以图案沉淀前体以形成钉扎线; 基本上蒸发溶剂以形成由钉扎线限定的材料前体的特征; 并将材料前体转化成图案化材料。

10. 发明申请

WO2008045327A3 SILICON POLYMERS, METHODS OF POLYMERIZING SILICON COMPOUNDS, AND METHODS OF FORMING THIN FILMS FROM SUCH SILICON POLYMERS 审中-公开
标题翻译：硅聚合物，聚合硅化合物的方法，以及由这种硅聚合物形成薄膜的方法
公开(公告)号：WO2008045327A3
公开(公告)日：2008-06-12
申请号：PCT/US2007021403
申请日：2007-10-04
申请人： KOVIO INC , KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
发明人： KARSHTEDT DMITRY , ROCKENBERGER JOERG , ZUERCHER FABIO , RIDLEY BRENT , SCHER ERIK
IPC分类号： C07F7/04
CPC分类号： H01L21/02628 , C08G77/60 , C09D183/16 , H01L21/02282 , H01L27/1214 , H01L27/1292
摘要： Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae Si n H 2n and Si n H 2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
摘要翻译：用于氢硅烷化合物的受控聚合和/或低聚反应的组合物和方法，包括通式Si _{n _{H _{2n 和Si _{n H _{2n + 2以及烷基硅烷和芳基硅烷，以产生可溶性硅聚合物作为具有低碳含量的硅膜的前体。}}}}}

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