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    • 4. 发明授权
    • Semiconductor light-emitting device
    • 半导体发光装置
    • US08071992B2
    • 2011-12-06
    • US12230234
    • 2008-08-26
    • Nobuaki KitanoMasahiro AraiKazuyuki Iizuka
    • Nobuaki KitanoMasahiro AraiKazuyuki Iizuka
    • H01L33/00
    • H01L33/405H01L33/0079H01L33/387H01L2924/0002H01L2924/00
    • A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.
    • 半导体发光器件包括支撑结构和发光结构。 支撑结构包括支撑基板和设置在支撑基板的一个表面上的支撑基板侧接合层。 发光结构包括结合到支撑基板侧接合层的发光结构侧接合层,设置在与支撑基板相对的支撑基板侧接合层上的反射区域,以及包括发光层 设置在与发光结构侧接合层相对的反射区域,用于发射具有预定波长的光;以及光提取表面,设置在与反射区域相对的发光层上,用于漫反射地反射光。 反射区域包括具有比半导体多层结构的折射率低的材料的透明层和金属材料的反射层。 透明层具有能够抑制由输入到透明层的光的多次反射引起的干涉的厚度。
    • 6. 发明授权
    • Light-emitting element and method of making the same
    • 发光元件及其制造方法
    • US08258529B2
    • 2012-09-04
    • US12616929
    • 2009-11-12
    • Taichiroo KonnoNobuaki Kitano
    • Taichiroo KonnoNobuaki Kitano
    • H01L33/10H01L33/22
    • H01L33/10
    • A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness TA1 defined by formulas (1) and (3), and the second semiconductor layer has a thickness TB1 defined by formulas (2) and (4).
    • 发光元件包括半导体衬底,包括夹在第一导电类型的第一包层和不同于第一导电类型的第二导电类型的第二包层之间的有源层的发光部分,设置有反射部分 在半导体基板和用于反射从有源层发射的光的发光部分之间的电流扩散层,以及设置在与反射部分相对的发光部分上的电流扩展层,并且在其表面上包括凹凸部分。 反射部分包括多个对,每个层包括不同于第一半导体层的第一半导体层和第二半导体层,并且第一半导体层具有由公式(1)和(3)定义的厚度TA1,第二半导体层 半导体层具有由式(2)和(4)定义的厚度TB1。
    • 10. 发明申请
    • Semiconductor light-emitting device
    • 半导体发光装置
    • US20090206354A1
    • 2009-08-20
    • US12230234
    • 2008-08-26
    • Nobuaki KitanoMasahiro AraiKazuyuki Iizuka
    • Nobuaki KitanoMasahiro AraiKazuyuki Iizuka
    • H01L33/00
    • H01L33/405H01L33/0079H01L33/387H01L2924/0002H01L2924/00
    • A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.
    • 半导体发光器件包括支撑结构和发光结构。 支撑结构包括支撑基板和设置在支撑基板的一个表面上的支撑基板侧接合层。 发光结构包括结合到支撑基板侧接合层的发光结构侧接合层,设置在与支撑基板相对的支撑基板侧接合层上的反射区域,以及包括发光层 设置在与发光结构侧接合层相对的反射区域,用于发射具有预定波长的光;以及光提取表面,设置在与反射区域相对的发光层上,用于漫反射地反射光。 反射区域包括具有比半导体多层结构的折射率低的材料的透明层和金属材料的反射层。 透明层具有能够抑制由输入到透明层的光的多次反射引起的干涉的厚度。