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    • 4. 发明授权
    • Solid-state image sensing device and method of manufacturing the same
    • 固态摄像装置及其制造方法
    • US08508628B2
    • 2013-08-13
    • US12877654
    • 2010-09-08
    • Tetsuya Yamaguchi
    • Tetsuya Yamaguchi
    • H04N5/217H04N3/14
    • H01L27/14643H01L27/14632H01L27/1464
    • According to one embodiment, a back side illumination solid-state image sensing device which comprises a pixel region where a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged on a semiconductor substrate, and in which a light illumination surface is formed on a substrate surface opposite to a surface of the semiconductor substrate on which the signal scanning circuit is formed, includes a silicon oxide film formed on the semiconductor substrate on the light illumination surface side, a p-type amorphous silicon compound layer formed on the silicon oxide film, and a hole storage layer formed by the p-type amorphous silicon compound layer near an interface between the semiconductor substrate on the light illumination surface side and the silicon oxide film.
    • 根据一个实施例,一种背面照明固态图像感测装置,其包括像素区域,其中包括光电转换器和信号扫描电路的多个像素布置在半导体衬底上,并且其中光照明表面是 形成在与形成有信号扫描电路的半导体衬底的表面相反的衬底表面上,包括在光照射面侧形成在半导体衬底上的氧化硅膜,形成在该衬底表面上的p型非晶硅化合物层 氧化硅膜和由p型非晶硅化合物层在光照射面侧的半导体基板之间的界面附近与氧化硅膜形成的空穴存储层。
    • 10. 发明授权
    • Solid state image sensor
    • 固态图像传感器
    • US6072206A
    • 2000-06-06
    • US272339
    • 1999-03-19
    • Hirofumi YamashitaIkuko InoueTetsuya YamaguchiHisanori IharaHidetoshi Nozaki
    • Hirofumi YamashitaIkuko InoueTetsuya YamaguchiHisanori IharaHidetoshi Nozaki
    • H01L27/146H01L31/0352H04N5/335H04N5/361H04N5/369H04N5/374H04N5/3745H01L31/062H01L31/113
    • H01L27/14609H01L27/14643H01L31/03529Y02E10/50
    • The present invention provides a solid state image sensor constructed in such a manner that, even if the impurity concentration of the wells of a transistors is increased, the junction leakage current does not increase, and thus, the picture quality of the reproduced picture is not deteriorated. On a p-type substrate, there are formed a first p-type well for a photoelectric conversion portion comprising a photodiode, and a second p-type well for a signal scanning circuit portion. In the surface portions of the first and second p-type wells, a first and a second n-type diffused layers are formed, respectively. The drain of a reset transistor and the drain of an amplifying transistor which constitute the second n-type diffused layer are connected to a power supply line. Further, the source of an address transistor which is an n-type diffused layer is connected to a vertical signal line. The gates of the amplifying transistor and the address transistor are formed between second n-type diffused layers disposed at predetermined intervals on the surface of the second p-type well.
    • 本发明提供了一种固态图像传感器,其构造方式是,即使晶体管的阱的杂质浓度增加,结漏电流也不增加,因此再现图像的图像质量不是 恶化 在p型衬底上形成有用于光电转换部分的第一p型阱以及用于信号扫描电路部分的第二p型阱。 在第一和第二p型阱的表面部分分别形成第一和第二n型扩散层。 构成第二n型扩散层的复位晶体管的漏极和放大晶体管的漏极连接到电源线。 此外,作为n型扩散层的地址晶体管的源极连接到垂直信号线。 放大晶体管和地址晶体管的栅极形成在第二p型阱的表面上以预定间隔设置的第二n型扩散层之间。