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    • 9. 发明授权
    • Solid-state image sensing device and method of manufacturing the same
    • 固态摄像装置及其制造方法
    • US08508628B2
    • 2013-08-13
    • US12877654
    • 2010-09-08
    • Tetsuya Yamaguchi
    • Tetsuya Yamaguchi
    • H04N5/217H04N3/14
    • H01L27/14643H01L27/14632H01L27/1464
    • According to one embodiment, a back side illumination solid-state image sensing device which comprises a pixel region where a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged on a semiconductor substrate, and in which a light illumination surface is formed on a substrate surface opposite to a surface of the semiconductor substrate on which the signal scanning circuit is formed, includes a silicon oxide film formed on the semiconductor substrate on the light illumination surface side, a p-type amorphous silicon compound layer formed on the silicon oxide film, and a hole storage layer formed by the p-type amorphous silicon compound layer near an interface between the semiconductor substrate on the light illumination surface side and the silicon oxide film.
    • 根据一个实施例,一种背面照明固态图像感测装置,其包括像素区域,其中包括光电转换器和信号扫描电路的多个像素布置在半导体衬底上,并且其中光照明表面是 形成在与形成有信号扫描电路的半导体衬底的表面相反的衬底表面上,包括在光照射面侧形成在半导体衬底上的氧化硅膜,形成在该衬底表面上的p型非晶硅化合物层 氧化硅膜和由p型非晶硅化合物层在光照射面侧的半导体基板之间的界面附近与氧化硅膜形成的空穴存储层。