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    • 2. 发明申请
    • Adhesive sheet roll for wafer processing
    • 用于晶片加工的粘合片卷
    • US20050191456A1
    • 2005-09-01
    • US11054826
    • 2005-02-10
    • Kouichi HashimotoKazuhiko Yamamoto
    • Kouichi HashimotoKazuhiko Yamamoto
    • C09J7/02C09J133/00C09J175/14C09J201/02H01L21/00H01L21/301H01L21/304B32B9/00
    • C09J7/22C09J7/38C09J7/403C09J2203/326C09J2205/31H01L21/67132Y10S428/906Y10T428/14Y10T428/1476Y10T428/24355
    • To present an adhesive sheet roll for wafer processing excellent in storage stability, radiation curing property, and low contamination to wafer. To present an adhesive sheet for wafer processing prepared by cutting the adhesive sheet roll for wafer processing, and an adhesive sheet with semiconductor wafer. To present a manufacturing method of semiconductor device using adhesive sheet for wafer processing or adhesive sheet with semiconductor wafer, and a semiconductor device obtained in this manufacturing method. An adhesive film for roll wafer processing which laminating multiple layers of laminated film stacking up base film, radiation curing type adhesive layer, and releasing film in this sequence, in which the arithmetic average roughness (Ra) of the other surface of the side of the base film and/or releasing film contacting with the radiation curing type adhesive layer is 1 μm or more, and the weight of the radical polymerization initiator contained in the radiation curing type adhesive layer is less than 1000 ppm.
    • 提供用于晶片处理的粘合片卷,其具有优异的储存稳定性,辐射固化性能和对晶片的低污染。 呈现通过切割用于晶片加工的粘合片卷制备的用于晶片加工的粘合片,以及具有半导体晶片的粘合片。 介绍使用晶片加工用粘合片或半导体晶片的半导体器件的制造方法以及在该制造方法中获得的半导体器件。 一种用于辊晶片处理的粘合膜,其中以层叠多层叠层膜叠层基膜,辐射固化型粘合剂层和脱模膜,其中该层的另一面的算术平均粗糙度(Ra) 与辐射固化型粘合剂层接触的基膜和/或脱模膜为1μm以上,辐射固化型粘合剂层中所含的自由基聚合引发剂的重量小于1000ppm。
    • 8. 发明授权
    • Image forming apparatus with changeable toner returning electric field application period
    • 具有可变色调剂返回电场应用期的图像形成装置
    • US06591072B2
    • 2003-07-08
    • US09984692
    • 2001-10-31
    • Kouichi HashimotoYuichiro ToyoharaKen-ichiro Kitajima
    • Kouichi HashimotoYuichiro ToyoharaKen-ichiro Kitajima
    • G03G1500
    • G03G15/0241G03G2215/022
    • An image forming apparatus includes an image bearing member; a charger for electrically charging the image bearing member; an electrostatic image forming device for forming an electrostatic image by selectively discharging a surface of the charged image bearing member; a developer for developing the electrostatic image formed on the image bearing member into a toner image; a transfer device for transferring the toner image from the image bearing member onto a transfer material; wherein the charger is capable of collecting residual toner from the image bearing member after an image transfer operation; an electric field forming device forms an electric field between the charger and the image bearing member to transfer the toner in the charger to the image bearing member; and a controller controls a length of time during which the electric field forming device forms the electric field, wherein the controller controls the length of time substantially in accordance with wear of a surface of the image bearing member.
    • 图像形成装置包括:图像承载部件; 用于对图像承载部件进行充电的充电器; 静电图像形成装置,用于通过选择性地排出带电图像承载部件的表面来形成静电图像; 用于将形成在图像承载部件上的静电图像显影成调色剂图像的显影剂; 用于将调色剂图像从图像承载部件转印到转印材料上的转印装置; 其中所述充电器能够在图像转印操作之后从所述图像承载部件收集残余调色剂; 电场形成装置在充电器和图像承载部件之间形成电场,以将充电器中的调色剂转印到图像承载部件; 并且控制器控制电场形成装置形成电场的时间长度,其中控制器基本上根据图像承载部件的表面的磨损控制时间长度。
    • 9. 发明授权
    • Process for the collective removal of resist material and side wall protective film
    • 用于集体除去抗蚀剂材料和侧壁保护膜的方法
    • US06436220B1
    • 2002-08-20
    • US09367099
    • 1999-08-10
    • Eiji ToyodaMakoto NamikawaKouichi HashimotoSeiichiro Shirai
    • Eiji ToyodaMakoto NamikawaKouichi HashimotoSeiichiro Shirai
    • B32B3120
    • H01L21/02071G03F7/34H01L21/027Y10T156/11
    • The present invention is intended to collectively remove unnecessary resist material and side wall protective film after dry etching by side wall protection process, making it possible to simplify the process for the preparation of semiconductors, etc. The process according to the present invention comprises removing unnecessary resist material (3) left behind after dry etching by side wall protection process with a resist pattern (3) present on a semiconductor substrate (2) as a mask and side wall protective film (4) deposited on the side wall (22) of pattern, said process comprising the steps of applying an pressure-sensitive adhesive sheet (1) to said substrate (2), heating the pressure-sensitive adhesive layer (1) under pressure so that the pressure-sensitive adhesive (11) comes in contact with up to the side wall (4) of pattern, and then collectively peeling said pressure-sensitive adhesive sheet (1), said resist material (3) and said side wall protective film (4) off said substrate.
    • 本发明旨在通过侧壁保护工艺在干蚀刻之后集中地去除不需要的抗蚀剂材料和侧壁保护膜,从而可以简化制备半导体等的工艺。根据本发明的方法包括去除不必要的 在作为掩模的半导体基板(2)上存在的抗蚀剂图案(3)通过侧壁保护处理在干蚀刻后留下的抗蚀剂材料(3)和沉积在侧壁(22)上的侧壁保护膜(4) 所述方法包括以下步骤:将压敏粘合片(1)施加到所述基底(2)上,在压力下加压压敏粘合剂层(1),使得压敏粘合剂(11)接触 直到图案的侧壁(4),然后将所述压敏粘合片(1),所述抗蚀剂材料(3)和所述侧壁保护膜(4)从所述基体上共同剥离 te。