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1. 发明申请

US20110120649A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20110120649A1
公开(公告)日：2011-05-26
申请号：US13019754
申请日：2011-02-02
申请人： Kouhei SATOU , Go Miya , Hiroshi Akiyama
发明人： Kouhei SATOU , Go Miya , Hiroshi Akiyama
IPC分类号： C23F1/08
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.
摘要翻译：本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

2. 发明申请

US20080110569A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20080110569A1
公开(公告)日：2008-05-15
申请号：US11682382
申请日：2007-03-06
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32935 , H01J37/32972
摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.
摘要翻译：本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

3. 发明授权

US07887669B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07887669B2
公开(公告)日：2011-02-15
申请号：US11683040
申请日：2007-03-07
申请人： Kouhei Satou , Go Miya , Hiroshi Akiyama
发明人： Kouhei Satou , Go Miya , Hiroshi Akiyama
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.
摘要翻译：本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

4. 发明申请

US20080110400A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工设备
公开(公告)号：US20080110400A1
公开(公告)日：2008-05-15
申请号：US11683040
申请日：2007-03-07
申请人： Kouhei Satou , Go Miya , Hiroshi Akiyama
发明人： Kouhei Satou , Go Miya , Hiroshi Akiyama
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.
摘要翻译：本发明提供一种等离子体处理装置，用于使用在真空室中产生的等离子体来处理安装在放置在真空处理室中的样品台上的晶片。等离子体处理装置包括放置在真空处理容器中的与晶片相对的板，该板具有引入第一处理气体的通孔; 垂直和相邻布置的第一和第二圆柱形构件; 并且与第一和第二圆柱形构件之间的间隙连通以用于供应第二处理气体的装置。在提供具有不同成分的第一处理气体和第二处理气体的同时处理晶片。

5. 发明申请

US20070209759A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070209759A1
公开(公告)日：2007-09-13
申请号：US11501814
申请日：2006-08-10
申请人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
发明人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/3244
摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.
摘要翻译：为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

6. 发明申请

US20100167426A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20100167426A1
公开(公告)日：2010-07-01
申请号：US12723443
申请日：2010-03-12
申请人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
发明人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01L21/32136 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source 101 to gas supply source 111, wherein the gas supply source 101 is switched to gas supply source 111 by opening a valve 114 in advance, setting a flow rate of MFC 112 to a flow rate used in the subsequent step, letting the gas supply source 111 to flow toward an exhaust means 5, and closing the valve 114 simultaneously when opening the valve 113, wherein a volume V1 of an area of a gas pipe 115 surrounded by the valve 113, the valve 114 and the MFC 112 is set sufficiently smaller than a volume Vo from the shower plate to the valve 113 including a gas reservoir 10 and a processing gas line 8. The present arrangement enables to prevent the occurrence of pressure undershoot and to solve the problem of discharge instability.
摘要翻译：本发明提供了一种在等离子体蚀刻的多个步骤中进行连续放电时，克服了劣化生产量，再现性劣化和等离子体放电不稳定性的缺陷的方法。本发明提供一种从气体供给源101切换到气体供给源111的气体切换方法，其中，气体供给源101通过预先打开阀114而切换到气体供给源111，将MFC112的流量设定为在后续步骤中使用的流量，使得气体供应源111朝向排气装置5流动，并且在打开阀113时同时关闭阀114，其中由管道115包围的气体管道115的区域的体积V1 阀113，阀114和MFC112被设定为足够小于从喷淋板到包括气体储存器10和处理气体管线8的阀113的体积Vo。本配置能够防止压力下冲的发生，解决放电不稳定的问题。

7. 发明申请

US20080078505A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20080078505A1
公开(公告)日：2008-04-03
申请号：US11670048
申请日：2007-02-01
申请人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
发明人： Naoyuki Kofuji , Hiroshi Akiyama , Kouhei Satou
IPC分类号： H01L21/306
CPC分类号： H01L21/32136 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： The invention provides a method for overcoming the drawbacks of deteriorated throughput, deteriorated reproducibility and plasma discharge instability when continuous discharge is performed during multiple steps of plasma etching. The present invention provides a gas switching method for switching from gas supply source 101 to gas supply source 111, wherein the gas supply source 101 is switched to gas supply source 111 by opening a valve 114 in advance, setting a flow rate of MFC 112 to a flow rate used in the subsequent step, letting the gas supply source 111 to flow toward an exhaust means 5, and closing the valve 114 simultaneously when opening the valve 113, wherein a volume V1 of an area of a gas pipe 115 surrounded by the valve 113, the valve 114 and the MFC 112 is set sufficiently smaller than a volume Vo from the shower plate to the valve 113 including a gas reservoir 10 and a processing gas line 8. The present arrangement enables to prevent the occurrence of pressure undershoot and to solve the problem of discharge instability.
摘要翻译：本发明提供了一种在等离子体蚀刻的多个步骤中进行连续放电时，克服了劣化生产量，再现性劣化和等离子体放电不稳定性的缺陷的方法。本发明提供一种从气体供给源101切换到气体供给源111的气体切换方法，其中，气体供给源101通过预先打开阀114而切换到气体供给源111，将MFC112的流量设定为在后续步骤中使用的流量，使得气体供应源111朝向排气装置5流动，并且在打开阀113时同时关闭阀门114，其中气体管道115的区域的体积V 1被阀113，阀114和MFC112被设定为充分小于从喷淋板到包括气体储存器10和加工气体管线8的阀113的体积Vo。本发明能够防止压力下冲的发生并解决放电不稳定的问题。

8. 发明授权

US09176075B2 Contamination inspection method and contamination inspection device 有权
标题翻译：污染检查方法和污染检查装置
公开(公告)号：US09176075B2
公开(公告)日：2015-11-03
申请号：US13390958
申请日：2010-06-21
申请人： Masanori Gunji , Tomonari Morioka , Hiroshi Akiyama , Hideki Fukushima
发明人： Masanori Gunji , Tomonari Morioka , Hiroshi Akiyama , Hideki Fukushima
IPC分类号： G01N21/00 , G01N21/956 , G01N21/94
CPC分类号： G01N21/95623 , G01N21/94
摘要： Provided are a contamination inspection method and a contamination inspection device for highly accurately detecting a defect in a wafer, a liquid crystal substrate and media or the like including patterns, for example, a semiconductor device or the like. The first aspect of the present invention is a contamination inspection device comprising: an irradiation optical system for irradiating lights on the inspection target substrate; and a spatial filter for shading diffracted lights form the inspection target substrate. Herein, the spatial filter comprises: a plurality of light shading materials; a control member for changing at least one of parameters selected from a shape, an angle and an interval with respect to the light shading material, and a control unit for controlling the control members.
摘要翻译：提供了用于高精度地检测包括图案的晶片，液晶基板和介质等的缺陷的污染检查方法和污染检查装置，例如半导体装置等。本发明的第一方面是一种污染检查装置，包括：照射光学系统，用于在检查对象基板上照射光; 并且用于遮蔽衍射光的空间滤光器形成检查对象基板。这里，空间滤波器包括：多个遮光材料; 用于改变相对于遮光材料的形状，角度和间隔中选择的参数中的至少一个的控制构件，以及用于控制控制构件的控制单元。

9. 发明授权

US08847179B2 Treatment planning apparatus and particle therapy system 有权
标题翻译：治疗计划设备和颗粒治疗系统
公开(公告)号：US08847179B2
公开(公告)日：2014-09-30
申请号：US13448553
申请日：2012-04-17
申请人： Shinichiro Fujitaka , Yusuke Fujii , Rintaro Fujimoto , Kazuo Hiramoto , Hiroshi Akiyama
发明人： Shinichiro Fujitaka , Yusuke Fujii , Rintaro Fujimoto , Kazuo Hiramoto , Hiroshi Akiyama
IPC分类号： G21K5/04 , A61N5/10
CPC分类号： A61N5/1043 , A61N5/1036 , A61N5/1045 , A61N2005/1087
摘要： A charged particle beam reduces treatment time in the uniform scanning or in the conformal layer stacking irradiation. In the uniform scanning, an optimum charged particle beam scan path for uniformly irradiating a collimator aperture area is calculated. In the conformal layer stacking irradiation, an optimum charged particle beam scan path for uniformly irradiating a multi-leaf collimator aperture area of each layer for each of the layers obtained by partitioning the target volume is calculated. Alternatively, a minimum irradiation field size that covers the multi-leaf collimator aperture area of each layer is calculated, and a scan path corresponding to the irradiation field size, prestored in a memory of a particle therapy control apparatus, is selected. The charged particle beam scan path is optimally changed in the lateral directions in conformity with the collimator aperture area in the uniform scanning or in each layer in the conformal layer stacking irradiation.
摘要翻译：带电粒子束在均匀扫描或共形层层叠照射中减少处理时间。在均匀扫描中，计算用于均匀照射准直器孔径面积的最佳带电粒子束扫描路径。在保形层堆积照射中，计算用于对通过划分目标体积获得的每个层的各层的多叶准直器孔径面均匀地照射的最佳带电粒子束扫描路径。或者，计算覆盖各层的多叶准直器开口面积的最小照射场尺寸，并且选择预先存储在粒子治疗控制装置的存储器中的与照射场尺寸对应的扫描路径。带电粒子束扫描路径在均匀扫描中或在共形层堆积照射中每层中的准直器开口面积在横向上最佳地改变。

10. 发明申请

US20110249240A1 COUPLING LENS, ILLUMINATING DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：耦合透镜，照明装置和电子装置
公开(公告)号：US20110249240A1
公开(公告)日：2011-10-13
申请号：US13140732
申请日：2009-12-15
申请人： Yoshitaka Takahashi , Hiroshi Akiyama
发明人： Yoshitaka Takahashi , Hiroshi Akiyama
IPC分类号： G02B27/12 , G03B21/14 , F21V13/04 , F21V5/04 , F21V5/02
CPC分类号： G02B27/0905 , G02B3/10 , G02B27/104 , G02B27/145 , G02B27/148
摘要： A coupling lens for coupling first light having a first wavelength from a first light source with a second light having a second wavelength from a second light source disposed adjacent to the first light source in substantially the same direction includes a first surface disposed to face the first and second light sources, the first surface including a first region transmitting the first light and having a first region curvature and a second region transmitting the second light and having a second region curvature, and a second surface opposite to the first surface and having a second-surface curvature. A position of a center of the first region curvature differs from a position of a center of the second region curvature. A center of the second surface curvature and the center of the first region curvature are disposed on an optical axis of the first or second light source.
摘要翻译：用于将具有来自第一光源的第一波长的第一光与具有第二波长的第二光耦合的耦合透镜，所述第二光具有与第一光源相邻设置的第二光源基本相同的方向，包括设置成面对第一光源的第一光和第二光源，所述第一表面包括透射所述第一光并具有第一区域曲率的第一区域和透射所述第二光并具有第二区域曲率的第二区域以及与所述第一表面相对的第二表面，并且具有第二光源表面曲率。第一区域曲率的中心的位置与第二区域曲率的中心的位置不同。第二表面曲率的中心和第一区域曲率的中心设置在第一或第二光源的光轴上。

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