专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090280507A1 METHOD FOR MEASUREMENT OF SARS VIRUS NUCLEOCAPSID PROTEIN, REAGENT KIT FOR THE MEASUREMENT, TEST DEVICE, MONOCLONAL ANTIBODY DIRECTED AGAINST SARS VIRUS NUCLEOCAPSID PROTEIN, AND HYBRIDOMA CAPABLE OF PRODUCING THE MONOCLONAL ANTIBODY 审中-公开
标题翻译：用于测量SARS病毒核蛋白质蛋白的方法，用于测量的试剂盒，测试装置，针对SARS病毒核蛋白质蛋白的单克隆抗体和产生单克隆抗体的混合物
公开(公告)号：US20090280507A1
公开(公告)日：2009-11-12
申请号：US12090055
申请日：2006-10-11
申请人： Kotaro Fujimoto , Tadahiro Kajita , Kazuhiko Takeda , Takashi Okamoto
发明人： Kotaro Fujimoto , Tadahiro Kajita , Kazuhiko Takeda , Takashi Okamoto
IPC分类号： G01N33/573 , G01N33/536 , G01N33/543 , C07K16/08 , C12N5/16
CPC分类号： G01N33/56983 , C07K14/005 , C07K16/10 , C12N2770/20022
摘要： The present invention provides a method for measuring SARS virus nucleocapsid protein (SARS-NP) using first and second antibodies both binding specifically to SARS-NP, wherein the first or second antibody is an antibody recognizing an epitope located in a region (Region C) of amino acid 283 to 422 from the N-terminus of the amino acid sequence of SARS-NP.
摘要翻译：本发明提供了使用特异性结合SARS-NP的第一和第二抗体测定SARS病毒核壳蛋白（SARS-NP）的方法，其中第一或第二抗体是识别位于区域（区域C）中的表位的抗体，从SARS-NP的氨基酸序列的N末端的氨基酸283至422。

2. 发明申请

US20060086692A1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20060086692A1
公开(公告)日：2006-04-27
申请号：US11063180
申请日：2005-02-23
申请人： Kotaro Fujimoto , Takeshi Shimada
发明人： Kotaro Fujimoto , Takeshi Shimada
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： C23F4/00
摘要： The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against anorganic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.
摘要翻译：本发明提供了一种等离子体蚀刻方法，其可以将金属膜作为要被选择性蚀刻的材料蚀刻到材料下面的有机膜上。蚀刻方法包括以下步骤：在蚀刻室中引入蚀刻气体，其中放置待蚀刻的材料，并将蚀刻气体激发到等离子体状态以蚀刻待蚀刻的材料，其中待蚀刻的材料是金属由Au，Pt，Ag，Ti，TiN，TiO，Al，铝合金构成的薄膜3或层叠在有机薄膜5上的这些薄膜的层压薄膜; 并且所述蚀刻气体是至少含有选自由Cl 2 3，BCl 3 N和HBr组成的组的气体的混合气体; 和至少一种选自CH 2 2 CH 2，CH 2 Br 2 CH，CH 2，CH 2， 3，Cl 3，CH 3 Br，CH 3 F和CH 4。

3. 发明申请

US20060191555A1 Method of cleaning etching apparatus 有权
标题翻译：清洗蚀刻装置的方法
公开(公告)号：US20060191555A1
公开(公告)日：2006-08-31
申请号：US11203092
申请日：2005-08-15
申请人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
发明人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： B08B7/0035
摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
摘要翻译：为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。每次蚀刻具有金属膜的工件（S 1）时，通过用虚设衬底（S 2）代替工件来清洁真空室的内部，使用氧气进行等离子体处理的第一步骤（O < 2）和四氟化碳（CF 4 SO 4）以除去碳基沉积堆（S 3），并且使用三氯化硼（BCl 3）进行等离子体处理的第二步骤和氯（Cl 2 O 2），以除去第一步骤不能除去的残余物和金属膜的蚀刻残留物（S 4）。

4. 发明申请

US20100288730A1 Vacuum Processing Apparatus And Vacuum Processing Method Using The Same 审中-公开
标题翻译：真空处理装置及其真空处理方法
公开(公告)号：US20100288730A1
公开(公告)日：2010-11-18
申请号：US12844268
申请日：2010-07-27
申请人： Toru Ito , Kotaro Fujimoto , Eiji Matsumoto , Atsushi Yoshida , Kouta Tanaka
发明人： Toru Ito , Kotaro Fujimoto , Eiji Matsumoto , Atsushi Yoshida , Kouta Tanaka
IPC分类号： C23F1/00 , C23C16/50
CPC分类号： G05D16/2013
摘要： The invention provides a vacuum processing chamber comprising a particle removing function and capable of improving the yield and process efficiency for processing samples. The vacuum processing apparatus for transferring and processing samples comprises a processing chamber 207 within a vacuum reactor 103 and a transfer chamber 217 which are communicated via a passage having a gate valve 218, wherein the apparatus further comprises a control unit 234 for performing control upon transferring a sample to be processed between the processing chamber 207 and the transfer chamber 217 by setting the opening of a variable valve 230 for controlling pressure disposed below the vacuum reactor 103 to a predetermined opening so as to decompress the interior of the vacuum reactor, and thereafter, without varying the opening of the variable valve 230 for controlling pressure, supplying a predetermined amount of gas through a feed hole 235 into the vacuum reactor 207 so as to create a gas flow, opening the gate valve 218 to transfer the sample, then closing the gate valve 218 and stopping the feeding of gas after the transfer of the sample has been completed.
摘要翻译：本发明提供一种真空处理室，其包括除尘功能，能够提高加工样品的产率和工艺效率。用于转移和处理样品的真空处理设备包括在真空反应器103内的处理室207和经由具有闸阀218的通道连通的传送室217，其中该设备还包括控制单元234，用于在传送通过将用于控制设置在真空反应器103下方的压力的可变阀230的开口设定为预定的开口，以便减压真空反应器的内部，然后将处理室207和转移室217之间的处理样品，而不改变用于控制压力的可变阀230的开口，将预定量的气体通过进料孔235供应到真空反应器207中，以产生气流，打开闸阀218以转移样品，然后关闭闸阀218和在样品转移后停止气体供给已经完成。

5. 发明申请

US20080170970A1 Vacuum Processing Apparatus and Vacuum Processing Method Using the Same 审中-公开
标题翻译：真空处理装置及其真空处理方法
公开(公告)号：US20080170970A1
公开(公告)日：2008-07-17
申请号：US11772850
申请日：2007-07-03
申请人： Toru Ito , Kotaro Fujimoto , Eiji Matsumoto , Atsushi Yoshida , Kouta Tanaka
发明人： Toru Ito , Kotaro Fujimoto , Eiji Matsumoto , Atsushi Yoshida , Kouta Tanaka
IPC分类号： G05D16/00
CPC分类号： G05D16/2013
摘要： The invention provides a vacuum processing chamber comprising a particle removing function and capable of improving the yield and process efficiency for processing samples. The vacuum processing apparatus for transferring and processing samples comprises a processing chamber 207 within a vacuum reactor 103 and a transfer chamber 217 which are communicated via a passage having a gate valve 218, wherein the apparatus further comprises a control unit 234 for performing control upon transferring a sample to be processed between the processing chamber 207 and the transfer chamber 217 by setting the opening of a variable valve 230 for controlling pressure disposed below the vacuum reactor 103 to a predetermined opening so as to decompress the interior of the vacuum reactor, and thereafter, without varying the opening of the variable valve 230 for controlling pressure, supplying a predetermined amount of gas through a feed hole 235 into the vacuum reactor 207 so as to create a gas flow, opening the gate valve 218 to transfer the sample, then closing the gate valve 218 and stopping the feeding of gas after the transfer of the sample has been completed.
摘要翻译：本发明提供一种真空处理室，其包括除尘功能，能够提高加工样品的产率和工艺效率。用于转移和处理样品的真空处理设备包括在真空反应器103内的处理室207和经由具有闸阀218的通道连通的传送室217，其中该设备还包括控制单元234，用于在传送通过将用于控制设置在真空反应器103下方的压力的可变阀230的开口设定为预定的开口，以便减压真空反应器的内部，然后将处理室207和转移室217之间的处理样品，而不改变用于控制压力的可变阀230的开口，将预定量的气体通过进料孔235供应到真空反应器207中，以产生气流，打开闸阀218以转移样品，然后关闭闸阀218和在样品转移后停止气体供给已经完成。

6. 发明授权

US06391466B1 Thermal transfer recording medium 失效
标题翻译：热转印记录介质
公开(公告)号：US06391466B1
公开(公告)日：2002-05-21
申请号：US09516421
申请日：2000-03-01
申请人： Jun Sogabe , Tetuo Hoshino , Kotaro Fujimoto , Yoshiyuki Asabe , Susumu Arauchi
发明人： Jun Sogabe , Tetuo Hoshino , Kotaro Fujimoto , Yoshiyuki Asabe , Susumu Arauchi
IPC分类号： B41M526
CPC分类号： B41M5/423 , B41M5/42 , B41M5/44 , Y10S428/913 , Y10S428/914
摘要： A thermal transfer recording medium comprising a support, and at least a heat-meltable release layer and a colored ink layer capable of being softened with heat stacked in this order on the support, the release layer comprising a wax as a main ingredient, and the release layer having a melting point of not less than 85° C., a heat of fusion of not more than 140 mJ/mg, and a melt viscosity of not more than 50 cps/120° C.
摘要翻译：一种热转印记录介质，包括支撑体，以及至少可热熔脱模层和能够以依次堆叠在载体上的热量软化的着色油墨层，所述脱模层包含蜡作为主要成分，熔点不低于85℃，熔融热不超过140mJ / mg，熔体粘度不大于50cps / 120℃。

7. 发明授权

US08506834B2 Method for dry etching Al2O3 film 有权
标题翻译：干法蚀刻Al2O3薄膜的方法
公开(公告)号：US08506834B2
公开(公告)日：2013-08-13
申请号：US12022207
申请日：2008-01-30
申请人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
发明人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： C23F4/00 , G11B5/3163
摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).
摘要翻译：本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。

8. 发明授权

US07662235B2 Method of cleaning etching apparatus 有权
标题翻译：清洗蚀刻装置的方法
公开(公告)号：US07662235B2
公开(公告)日：2010-02-16
申请号：US11203092
申请日：2005-08-15
申请人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
发明人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
IPC分类号： B08B3/12 , B08B6/00
CPC分类号： B08B7/0035
摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition.Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
摘要翻译：为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。每次蚀刻具有金属膜的一个工件（S1），通过用虚设衬底（S2）代替工件来清洁真空室的内部，使用氧（O 2）和四氟化碳（O 2）进行等离子体处理的第一步骤 CF4）以除去碳基沉积堆（S3），并且使用三氯化硼（BCl 3）和氯（Cl 2）进行等离子体处理的第二步骤，以除去第一步骤中不能除去的残留物和蚀刻残留物的金属膜（S4）。

9. 发明授权

US07186659B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US07186659B2
公开(公告)日：2007-03-06
申请号：US11063180
申请日：2005-02-23
申请人： Kotaro Fujimoto , Takeshi Shimada
发明人： Kotaro Fujimoto , Takeshi Shimada
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： C23F4/00
摘要： The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against an organic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.
摘要翻译：本发明提供了一种等离子体蚀刻方法，其可以将金属膜作为要被蚀刻的材料选择性地蚀刻到材料下面的有机膜上。蚀刻方法包括以下步骤：在蚀刻室中引入蚀刻气体，其中放置待蚀刻的材料，并将蚀刻气体激发到等离子体状态以蚀刻待蚀刻的材料，其中待蚀刻的材料是金属由Au，Pt，Ag，Ti，TiN，TiO，Al，铝合金构成的薄膜3或层叠在有机薄膜5上的这些薄膜的层压薄膜; 并且所述蚀刻气体是至少含有选自由Cl 2 3，BCl 3 N和HBr组成的组的气体的混合气体; 和至少一种选自CH 2 2 CH 2，CH 2 Br 2 CH，CH 2，CH 2， 3，Cl 3，CH 3 Br，CH 3 F和CH 4。

10. 发明申请

US20090078676A1 METHOD FOR DRY ETCHING Al2O3 FILM 有权
标题翻译：干法蚀刻Al2O3薄膜的方法
公开(公告)号：US20090078676A1
公开(公告)日：2009-03-26
申请号：US12022207
申请日：2008-01-30
申请人： Kentaro YAMADA , Takeshi Shimada , Kotaro Fujimoto
发明人： Kentaro YAMADA , Takeshi Shimada , Kotaro Fujimoto
IPC分类号： C23F1/00
CPC分类号： C23F4/00 , G11B5/3163
摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).
摘要翻译：本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式