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1. 发明申请

US20090078676A1 METHOD FOR DRY ETCHING Al2O3 FILM 有权
标题翻译：干法蚀刻Al2O3薄膜的方法
公开(公告)号：US20090078676A1
公开(公告)日：2009-03-26
申请号：US12022207
申请日：2008-01-30
申请人： Kentaro YAMADA , Takeshi Shimada , Kotaro Fujimoto
发明人： Kentaro YAMADA , Takeshi Shimada , Kotaro Fujimoto
IPC分类号： C23F1/00
CPC分类号： C23F4/00 , G11B5/3163
摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).
摘要翻译：本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。

2. 发明申请

US20060191555A1 Method of cleaning etching apparatus 有权
标题翻译：清洗蚀刻装置的方法
公开(公告)号：US20060191555A1
公开(公告)日：2006-08-31
申请号：US11203092
申请日：2005-08-15
申请人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
发明人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： B08B7/0035
摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
摘要翻译：为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。每次蚀刻具有金属膜的工件（S 1）时，通过用虚设衬底（S 2）代替工件来清洁真空室的内部，使用氧气进行等离子体处理的第一步骤（O < 2）和四氟化碳（CF 4 SO 4）以除去碳基沉积堆（S 3），并且使用三氯化硼（BCl 3）进行等离子体处理的第二步骤和氯（Cl 2 O 2），以除去第一步骤不能除去的残余物和金属膜的蚀刻残留物（S 4）。

3. 发明授权

US08506834B2 Method for dry etching Al2O3 film 有权
标题翻译：干法蚀刻Al2O3薄膜的方法
公开(公告)号：US08506834B2
公开(公告)日：2013-08-13
申请号：US12022207
申请日：2008-01-30
申请人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
发明人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： C23F4/00 , G11B5/3163
摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).
摘要翻译：本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。

4. 发明授权

US07662235B2 Method of cleaning etching apparatus 有权
标题翻译：清洗蚀刻装置的方法
公开(公告)号：US07662235B2
公开(公告)日：2010-02-16
申请号：US11203092
申请日：2005-08-15
申请人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
发明人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
IPC分类号： B08B3/12 , B08B6/00
CPC分类号： B08B7/0035
摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition.Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
摘要翻译：为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。每次蚀刻具有金属膜的一个工件（S1），通过用虚设衬底（S2）代替工件来清洁真空室的内部，使用氧（O 2）和四氟化碳（O 2）进行等离子体处理的第一步骤 CF4）以除去碳基沉积堆（S3），并且使用三氯化硼（BCl 3）和氯（Cl 2）进行等离子体处理的第二步骤，以除去第一步骤中不能除去的残留物和蚀刻残留物的金属膜（S4）。

5. 发明授权

US07186659B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US07186659B2
公开(公告)日：2007-03-06
申请号：US11063180
申请日：2005-02-23
申请人： Kotaro Fujimoto , Takeshi Shimada
发明人： Kotaro Fujimoto , Takeshi Shimada
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： C23F4/00
摘要： The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against an organic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.
摘要翻译：本发明提供了一种等离子体蚀刻方法，其可以将金属膜作为要被蚀刻的材料选择性地蚀刻到材料下面的有机膜上。蚀刻方法包括以下步骤：在蚀刻室中引入蚀刻气体，其中放置待蚀刻的材料，并将蚀刻气体激发到等离子体状态以蚀刻待蚀刻的材料，其中待蚀刻的材料是金属由Au，Pt，Ag，Ti，TiN，TiO，Al，铝合金构成的薄膜3或层叠在有机薄膜5上的这些薄膜的层压薄膜; 并且所述蚀刻气体是至少含有选自由Cl 2 3，BCl 3 N和HBr组成的组的气体的混合气体; 和至少一种选自CH 2 2 CH 2，CH 2 Br 2 CH，CH 2，CH 2， 3，Cl 3，CH 3 Br，CH 3 F和CH 4。

6. 发明申请

US20060086692A1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20060086692A1
公开(公告)日：2006-04-27
申请号：US11063180
申请日：2005-02-23
申请人： Kotaro Fujimoto , Takeshi Shimada
发明人： Kotaro Fujimoto , Takeshi Shimada
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： C23F4/00
摘要： The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against anorganic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.
摘要翻译：本发明提供了一种等离子体蚀刻方法，其可以将金属膜作为要被选择性蚀刻的材料蚀刻到材料下面的有机膜上。蚀刻方法包括以下步骤：在蚀刻室中引入蚀刻气体，其中放置待蚀刻的材料，并将蚀刻气体激发到等离子体状态以蚀刻待蚀刻的材料，其中待蚀刻的材料是金属由Au，Pt，Ag，Ti，TiN，TiO，Al，铝合金构成的薄膜3或层叠在有机薄膜5上的这些薄膜的层压薄膜; 并且所述蚀刻气体是至少含有选自由Cl 2 3，BCl 3 N和HBr组成的组的气体的混合气体; 和至少一种选自CH 2 2 CH 2，CH 2 Br 2 CH，CH 2，CH 2， 3，Cl 3，CH 3 Br，CH 3 F和CH 4。

7. 发明申请

US20100288195A1 PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100288195A1
公开(公告)日：2010-11-18
申请号：US12846403
申请日：2010-07-29
申请人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： C23C16/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

8. 发明授权

US07825054B2 Semiconductor porcelain composition 有权
标题翻译：半导体瓷组成
公开(公告)号：US07825054B2
公开(公告)日：2010-11-02
申请号：US12063494
申请日：2005-08-11
申请人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
发明人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C04B35/6262 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3251 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6585 , H01G4/1227
摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
摘要翻译：本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制，室温下的电阻率可以显着降低。因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

9. 发明申请

US20100183862A1 RESIN COMPOSITION, AND PREPREG 失效
标题翻译：树脂组合物和PREPREG
公开(公告)号：US20100183862A1
公开(公告)日：2010-07-22
申请号：US12594278
申请日：2008-04-11
申请人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
发明人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
IPC分类号： B32B27/04 , C08K9/10 , B32B37/00
CPC分类号： C08J5/24 , C08G59/504 , C08J3/241 , C08J2363/00 , C08K5/41 , C08L63/00 , C08L2205/14 , Y10T156/10 , Y10T428/24994 , Y10T428/249948 , Y10T428/24995 , Y10T428/249952 , Y10T428/25 , Y10T428/254 , Y10T428/2938 , Y10T428/31511 , Y10T428/31515 , C08L2666/02
摘要： The present invention discloses: a resin composition comprising, as essential components, 100 parts by mass of a component (A) which is an epoxy resin, 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles, and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent, in which resin composition the thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 μm and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 μm at a mass ratio of 3:1 to 1:3 and the average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more, and a prepreg produced using the resin composition.
摘要翻译：本发明公开了一种树脂组合物，作为必要成分，将100质量份作为环氧树脂的成分（A），41〜80质量份作为热塑性树脂粒子的成分（B）和20质量份至50质量份（以二氨基二苯砜计）（以二氨基二苯基砜为单位），该组分（C）是用涂料微胶囊化的二氨基二苯砜，其中树脂组合物热塑性树脂颗粒（B）至少包含具有平均颗粒的热塑性树脂颗粒直径为1〜50μm，平均粒径为2〜100μm的热塑性树脂粒子（B2）的质量比为3:1〜1:3，平均粒径D2 / D1为平均粒径D2 的热塑性树脂粒子（B2）与热塑性树脂粒子（B1）的平均粒径D1的比为2以上，使用该树脂组合物制造的预浸料坯。

10. 发明申请

US20090297066A1 Image transmitting apparatus and image transmitting program 有权
标题翻译：图像发送装置和图像发送程序
公开(公告)号：US20090297066A1
公开(公告)日：2009-12-03
申请号：US12219931
申请日：2008-07-30
申请人： Hideo Hatayama , Masamichi Sakaino , Masaru Nishita , Takeshi Shimada
发明人： Hideo Hatayama , Masamichi Sakaino , Masaru Nishita , Takeshi Shimada
IPC分类号： G06K9/03
CPC分类号： G06T11/60 , A63F13/12 , A63F13/63 , A63F2300/57 , A63F2300/6018
摘要： A game apparatus functioning as an image transmitting apparatus includes a CPU. The CPU performs an edit of at least one image with a controller according to an instruction by a user, transmits image data of the image through a wireless communication module to a network during execution of the edit, and further transmits layout information indicating a layout of the image after completion of the edit.
摘要翻译：用作图像发送装置的游戏装置包括CPU。 CPU根据用户的指示，使用控制器执行至少一个图像的编辑，在执行编辑期间通过无线通信模块将图像的图像数据发送到网络，并且进一步发送指示布局的布局信息完成编辑后的图像。

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