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1. 发明授权

US06884334B2 Vertically configured chamber used for multiple processes 有权
标题翻译：垂直配置的腔室用于多个过程
公开(公告)号：US06884334B2
公开(公告)日：2005-04-26
申请号：US10041058
申请日：2001-12-28
申请人： Konstantin Volodarsky , Boguslaw A. Nigorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
发明人： Konstantin Volodarsky , Boguslaw A. Nigorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25D7/12 , H01L21/00 , H01L21/02 , H01L21/3063 , C25D5/00
CPC分类号： H01L21/6719 , C25D7/12 , C25D17/001 , H01L21/67028 , Y10S134/902
摘要： The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.
摘要翻译：本发明涉及一种用于进行多个处理步骤的容纳室，例如沉积，抛光，蚀刻，改性，漂洗，清洁和干燥工件上的表面。在本发明的一个实例中，室用于在半导体晶片上化学机械地沉积导电材料。然后可以使用相同的容纳室来冲洗和清洁相同的晶片。结果，本发明消除了对用于沉积导电材料和清洁晶片的单独处理站的需要。因此，利用本发明，降低了成本和物理空间，同时提供了使用容纳室在晶片表面上执行多个工艺的有效的装置和方法。

2. 发明授权

US06969456B2 Method of using vertically configured chamber used for multiple processes 有权
标题翻译：使用垂直配置的室用于多个过程的方法
公开(公告)号：US06969456B2
公开(公告)日：2005-11-29
申请号：US10041029
申请日：2001-12-28
申请人： Konstantin Volodarsky , Boguslaw A. Nagorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
发明人： Konstantin Volodarsky , Boguslaw A. Nagorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25D7/12 , H01L21/00 , H01L21/02 , H01L21/3063 , C25F3/00 , B08B3/04
CPC分类号： H01L21/6719 , C25D7/12 , C25D17/001 , H01L21/67028 , Y10S134/902
摘要： The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.
摘要翻译：本发明涉及一种用于进行多个处理步骤的容纳室，例如沉积，抛光，蚀刻，改性，漂洗，清洁和干燥工件上的表面。在本发明的一个实例中，室用于在半导体晶片上化学机械地沉积导电材料。然后可以使用相同的容纳室来冲洗和清洁相同的晶片。结果，本发明消除了对用于沉积导电材料和清洁晶片的单独处理站的需要。因此，利用本发明，降低了成本和物理空间，同时提供了使用容纳室在晶片表面上执行多个工艺的有效的装置和方法。

3. 发明授权

US06773576B2 Anode assembly for plating and planarizing a conductive layer 有权
标题翻译：用于电镀和平坦化导电层的阳极组件
公开(公告)号：US06773576B2
公开(公告)日：2004-08-10
申请号：US10251377
申请日：2002-09-20
申请人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
发明人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
IPC分类号： C25F302
CPC分类号： C25D17/14 , C25F7/00
摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.
摘要翻译：可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。还提供了可以将溶液输送到所述阳极腔的溶液输送结构。溶液输送结构可以包含在进行操作的室内。护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

4. 发明授权

US06478936B1 Anode assembly for plating and planarizing a conductive layer 有权
标题翻译：用于电镀和平坦化导电层的阳极组件
公开(公告)号：US06478936B1
公开(公告)日：2002-11-12
申请号：US09568584
申请日：2000-05-11
申请人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
发明人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
IPC分类号： C25B1103
CPC分类号： C25D17/14 , C25F7/00
摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.
摘要翻译：可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。还提供了可以将溶液输送到所述阳极腔的溶液输送结构。溶液输送结构可以包含在进行操作的室内。护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

5. 发明授权

US06352623B1 Vertically configured chamber used for multiple processes 有权
公开(公告)号：US06352623B1
公开(公告)日：2002-03-05
申请号：US09466014
申请日：1999-12-17
申请人： Konstantin Volodarsky , Boguslaw A. Nagorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
发明人： Konstantin Volodarsky , Boguslaw A. Nagorski , Rimma Volodarsky , Douglas W. Young , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25B900
CPC分类号： H01L21/6719 , C25D7/12 , C25D17/001 , H01L21/67028 , Y10S134/902
摘要： The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

6. 发明申请

US20050040049A1 Anode assembly for plating and planarizing a conductive layer 审中-公开
标题翻译：用于电镀和平坦化导电层的阳极组件
公开(公告)号：US20050040049A1
公开(公告)日：2005-02-24
申请号：US10914490
申请日：2004-08-10
申请人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas Young
发明人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas Young
IPC分类号： B23H7/00 , C25D5/08 , C25D7/12 , C25D17/10 , H01L21/288 , H01L21/768
CPC分类号： C25D17/001 , C25D5/08 , C25D17/008 , C25D17/10 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.
摘要翻译：可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。还提供了可以将溶液输送到所述阳极腔的溶液输送结构。溶液输送结构可以包含在进行操作的室内。护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

7. 发明申请

US20050079713A1 Edge and bevel cleaning process and system 有权
标题翻译：边缘和斜面清洁过程和系统
公开(公告)号：US20050079713A1
公开(公告)日：2005-04-14
申请号：US10920028
申请日：2004-08-16
申请人： Jalal Ashjaee , Rimma Volodarsky , Cyprian Uzoh , Bulent Basol , Homayoun Talieh
发明人： Jalal Ashjaee , Rimma Volodarsky , Cyprian Uzoh , Bulent Basol , Homayoun Talieh
IPC分类号： H01L21/00 , H01L21/288 , H01L21/3213 , H01L21/302 , H01L21/461
CPC分类号： H01L21/6708 , H01L21/2885 , H01L21/32134
摘要： The present invention provides at least one nozzle that sprays a rotating workpiece with an etchant at an edge thereof. The at least one nozzle is located in an upper chamber of a vertically configured processing subsystem that also includes mechanisms for plating, cleaning and drying in upper and lower chambers
摘要翻译：本发明提供了至少一个喷嘴，其在其边缘处用蚀刻剂喷射旋转的工件。所述至少一个喷嘴位于垂直构造的处理子系统的上腔室中，所述处理子系统还包括用于在上腔室和下室中进行电镀，清洁和干燥的机构

8. 发明授权

US06612915B1 Work piece carrier head for plating and polishing 有权
标题翻译：工件载体头用于电镀和抛光
公开(公告)号：US06612915B1
公开(公告)日：2003-09-02
申请号：US09472523
申请日：1999-12-27
申请人： Cyprian Uzoh , Boguslaw Andrzej Nagorski , Konstantin Volodarsky , Douglas W. Young
发明人： Cyprian Uzoh , Boguslaw Andrzej Nagorski , Konstantin Volodarsky , Douglas W. Young
IPC分类号： B24B700
CPC分类号： B24B37/30 , C25D7/12
摘要： A work piece carrier head can carry a semiconductor wafer during both plating and polishing operations. The carrier head includes a first component secured to a shaft by which the carrier head can be rotated, translated, and moved up and down, a second component connected to the first component and movable by fluid pressure relative to the first component between retracted and extended positions, and a third component connected to the first and second components for up and down movement between wafer loading or unloading and wafer plating or polishing positions. The third carrier head component includes a contact element by which electrical contact with the wafer is provided to permit wafer plating.
摘要翻译：工件载体头可以在电镀和抛光操作期间承载半导体晶片。承载头包括固定到轴的第一部件，承载头可以通过该第一部件旋转，平移和上下移动;第二部件，连接到第一部件并且可相对于第一部件在流体压力下相对于第一部件在缩回和延伸之间移动位置，以及连接到第一和第二部件的第三部件，用于晶片装载或卸载以及晶片电镀或抛光位置之间的上下移动。第三载体头部件包括接触元件，通过该接触元件提供与晶片的电接触以允许晶片电镀。

9. 发明申请

US20060219573A1 Apparatus with conductive pad for electroprocessing 有权
标题翻译：具有电加工导电垫的装置
公开(公告)号：US20060219573A1
公开(公告)日：2006-10-05
申请号：US11445594
申请日：2006-06-01
申请人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol , Douglas Young
发明人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol , Douglas Young
IPC分类号： B23H3/00
CPC分类号： B24B37/20 , B24B37/046 , B24B37/24 , B24B37/26 , C25D5/06 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/2885 , H01L21/76877
摘要： The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.
摘要翻译：本发明涉及通过旋转靠近基板的垫片或刀片型物体来在半导体衬底上镀覆导电材料的方法和装置，从而消除/减少凹陷和空隙。这通过提供安装在圆柱形阳极或辊子上的垫片或刀片型物体，并使用设置在垫片上或穿过垫片上的电解质溶液将导电材料施加到衬底来实现。在本发明的一个实施例中，衬垫或刀片型物体安装在圆柱形阳极上并围绕第一轴线旋转，同时工件可以是静止的或围绕第二轴线旋转，并且来自电解质溶液的金属沉积在工件上，在工件和阳极之间施加电位差。在本发明的另一实施例中，电镀装置包括与阴极工件间隔开的阳极板。在向阳极板和阴极工件施加电力时，使用设置在电镀装置中的电解液将导电材料沉积在工件表面上，使用具有焊盘或刀片型物体的圆柱形辊。

10. 发明申请

US20060070885A1 Chip interconnect and packaging deposition methods and structures 审中-公开
公开(公告)号：US20060070885A1
公开(公告)日：2006-04-06
申请号：US11295014
申请日：2005-12-06
申请人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol
发明人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol
IPC分类号： C25D5/02 , C25D5/48
CPC分类号： C25D5/00 , C23C18/1608 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1848 , C23C18/31 , C25D5/02 , C25D5/10 , C25D5/22 , C25D5/34 , H01L21/2885 , H01L21/7684 , H01L21/76843 , H01L21/76855 , H01L21/76865 , H01L21/76871 , H01L21/76874 , H01L21/76876 , H01L21/76879 , H01L21/76885 , H01L24/11 , H01L2221/1089 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01021 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/3011
摘要： The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

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