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1. 发明申请

WO2004037713A1 METHOD FOR MANUFACTURING A MICRO-ELECTROMECHANICAL DEVICE AND MICRO-ELECTROMECHANICAL DEVICE OBTAINED THEREWITH 审中-公开
标题翻译：微电子器件制造方法及其获得的微电子器件
公开(公告)号：WO2004037713A1
公开(公告)日：2004-05-06
申请号：PCT/IB2003/004586
申请日：2003-10-17
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN BEEK, Jozef, T., M. , VAN GROOTEL, Margot
发明人： VAN BEEK, Jozef, T., M. , VAN GROOTEL, Margot
IPC分类号： B81C1/00
CPC分类号： B81C1/00595 , B81B2203/0323 , B81C2201/0142
摘要： The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second material different from the first material, and a second electroconductive layer (5) in which a second electrode (5A) lying opposite the first electrode is formed which together with the first electrode (2A) and the first insulating layer (3) forms the device (10), in which after the second conductive layer (5) has been deposited, the second insulating layer (4) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer (5). According to the invention for the first material and the second material materials are selected which are only limitedly selectively etchable with respect to each other and before depositing the second insulating layer (4) a further layer (6) is provided on top of the first insulating layer (3) of a further material that is selectively etchable with respect to the first material. In this way a silicon oxide and a silicon nitride may be applied for the insulating layers (3, 4) and thus the method according to the invention is very compatible with current IC processes. The second insulating layer (4) is preferably removed locally by etching, then the further layer (6) is completely removed by etching and, finally, the second insulating layer (4) is completely removed by etching.
摘要翻译：本发明涉及一种制造微机电装置（10）的方法，其中连续地沉积在基板（1）上，形成有电极（2A）的第一导电层（2），第一电绝缘层第一材料的第一电极和第二电极的第二电绝缘层（4）和与第一电极相对的第二电极（5A）的第二导电层（5）第一电极（2A）和第一绝缘层（3）形成装置（10），其中在第二导电层（5）沉积之后，通过蚀刻剂除去第二绝缘层（4）其相对于第二导电层（5）的材料是选择性的。根据本发明，选择第一材料和第二材料材料，其仅相对于彼此被有限地可选择性地蚀刻，并且在沉积第二绝缘层（4）之前，另外的层（6）设置在第一绝缘体层（3），其可相对于第一材料可选择性地蚀刻。以这种方式，可以对绝缘层（3,4）施加氧化硅和氮化硅，因此根据本发明的方法与当前的IC工艺非常兼容。优选通过蚀刻局部地去除第二绝缘层（4），然后通过蚀刻完全去除另外的层（6），最后通过蚀刻完全去除第二绝缘层（4）。

2. 发明申请

WO2006027724A1 ELECTRIC LAMP AND INTERFERENCE FILM 审中-公开
标题翻译：电灯和干涉膜
公开(公告)号：WO2006027724A1
公开(公告)日：2006-03-16
申请号：PCT/IB2005/052852
申请日：2005-08-31
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN GROOTEL, Margot , VAN SPRANG, Hans , MARRA, Johan
发明人： VAN GROOTEL, Margot , VAN SPRANG, Hans , MARRA, Johan
IPC分类号： H01K1/32 , G02B5/28 , H01J61/35
CPC分类号： H01K1/325
摘要： An electric lamp has a light-transmitting lamp vessel (1) in which a light source (2) is arranged. At least a portion of the lamp vessel is provided with an interference film (5) for allowing passage of visible-light radiation and reflecting infrared radiation. The interference film has either a first plurality of alternating layers of Si02 and TiO 2 or a second plurality of alternating layers of SiO 2 , TiO 2 and Ta 2 O 5 . The TiO 2 layers in the first plurality of alternating layers have a geometrical thickness of at most 75 nm by inserting relatively thin Si02 interlayers into the TiO 2 layers, and the SiO 2 interlayers have a geometrical thickness of at least 1 nm and at most 7.5 nm. The TiO 2 layers in the second plurality of alternating layers have a geometrical thickness of at most 25 nm by inserting relatively thin Ta 2 O 5 interlayers into the TiO 2 layers, and the Ta 2 O 5 interlayers have a geometrical thickness of at least 1 nm and at most 5 nm.
摘要翻译：电灯具有布置有光源（2）的透光灯容器（1）。灯容器的至少一部分设置有用于允许可见光辐射通过并反射红外辐射的干涉膜（5）。干涉膜具有SiO 2和TiO 2的第一多个交替层

3. 发明公开

EP1556307A1 METHOD FOR MANUFACTURING A MICRO-ELECTROMECHANICAL DEVICE AND MICRO-ELECTROMECHANICAL DEVICE OBTAINED THEREWITH 审中-公开
标题翻译：方法用于生产具有这产生微机电器件微机电装置及方法
公开(公告)号：EP1556307A1
公开(公告)日：2005-07-27
申请号：EP03751132.6
申请日：2003-10-17
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN BEEK, Jozef, T., M. , VAN GROOTEL, Margot
IPC分类号： B81C1/00
CPC分类号： B81C1/00595 , B81B2203/0323 , B81C2201/0142
摘要： The invention relates to a method of manufacturing a micro-electromechanical device ( 10 ), in which are consecutively deposited on a substrate ( 1 ) a first electroconductive layer ( 2 ) in which an electrode ( 2 A) is formed, a first electroinsulating layer ( 3 ) of a first material, a second electroinsulating layer ( 4 ) of a second material different from the first material, and a second electroconductive layer ( 5 ) in which a second electrode ( 5 A) lying opposite the first electrode is formed which together with the first electrode ( 2 A) and the first insulating layer ( 3 ) forms the device ( 10 ), in which after the second conductive layer ( 5 ) deposited, the second insulating layer ( 4 ) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer ( 5 ). According to the invention for the first material and the second material materials are selected which are only limitedly selectively etchable with respect to each other and before depositing the second insulating layer ( 4 ) a further layer ( 6 ) is provided on top of the first insulating layer ( 3 ) of a further material that is selectively etchable with respect to the first material. In this way a silicon oxide and a silicon nitride may be applied for the insulating layers ( 3, 4 ) and thus the method according to the invention is very compatible with current IC processes. The second insulating layer ( 4 ) is preferably removed locally by etching, then the further layer ( 6 ) is completely removed by etching and, finally, the second insulating layer ( 4 ) is completely removed by etching.

4. 发明授权

EP1792328B1 ELECTRIC LAMP AND INTERFERENCE FILM 无效
标题翻译：所述的电灯和干涉镀膜
公开(公告)号：EP1792328B1
公开(公告)日：2008-02-13
申请号：EP05781662.1
申请日：2005-08-31
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN GROOTEL, Margot , VAN SPRANG, Hans , MARRA, Johan
IPC分类号： H01K1/32 , G02B5/28 , H01J61/35
CPC分类号： H01K1/325
摘要： An electric lamp has a light-transmitting lamp vessel (1) in which a light source (2) is arranged. At least a portion of the lamp vessel is provided with an interference film (5) for allowing passage of visible-light radiation and reflecting infrared radiation. The interference film has either a first plurality of alternating layers of Si02 and TiO

5. 发明公开

EP1792328A1 ELECTRIC LAMP AND INTERFERENCE FILM 无效
标题翻译：所述的电灯和干涉镀膜
公开(公告)号：EP1792328A1
公开(公告)日：2007-06-06
申请号：EP05781662.1
申请日：2005-08-31
申请人： Koninklijke Philips Electronics N.V.
发明人： VAN GROOTEL, Margot , VAN SPRANG, Hans , MARRA, Johan
IPC分类号： H01K1/32 , G02B5/28 , H01J61/35
CPC分类号： H01K1/325
摘要： An electric lamp has a light-transmitting lamp vessel (1) in which a light source (2) is arranged. At least a portion of the lamp vessel is provided with an interference film (5) for allowing passage of visible-light radiation and reflecting infrared radiation. The interference film has either a first plurality of alternating layers of Si02 and TiO2 or a second plurality of alternating layers of SiO2, TiO2 and Ta2O5. The TiO2 layers in the first plurality of alternating layers have a geometrical thickness of at most 75 nm by inserting relatively thin Si02 interlayers into the TiO2 layers, and the SiO2 interlayers have a geometrical thickness of at least 1 nm and at most 7.5 nm. The TiO2 layers in the second plurality of alternating layers have a geometrical thickness of at most 25 nm by inserting relatively thin Ta2O5 interlayers into the TiO2 layers, and the Ta2O5 interlayers have a geometrical thickness of at least 1 nm and at most 5 nm.

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