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1. 发明授权

US09165898B2 Method of manufacturing semiconductor device with through hole 有权
标题翻译：具有通孔的半导体器件的制造方法
公开(公告)号：US09165898B2
公开(公告)日：2015-10-20
申请号：US12346667
申请日：2008-12-30
申请人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
发明人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
IPC分类号： H01L21/44 , H01L23/00 , H01L21/768 , H01L23/31 , H01L23/48
CPC分类号： H01L24/11 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/12 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05548 , H01L2224/05569 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/15788 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括通过第一绝缘层形成在半导体衬底上的焊盘电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中通孔包括第一开口部，其靠近焊盘电极的部分的直径大于靠近半导体基板的背面的部分的直径;以及第二开口，形成在第一绝缘层中并与第一开口连续，其中靠近焊盘电极的部分的直径小于靠近半导体衬底的前表面的部分的直径。

2. 发明授权

US07485967B2 Semiconductor device with via hole for electric connection 有权
标题翻译：具有电气连接通孔的半导体装置
公开(公告)号：US07485967B2
公开(公告)日：2009-02-03
申请号：US11362503
申请日：2006-02-27
申请人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
发明人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/11 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/12 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05548 , H01L2224/05569 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/15788 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括通过第一绝缘层形成在半导体衬底上的焊盘电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中通孔包括第一开口部，其靠近焊盘电极的部分的直径大于靠近半导体基板的背面的部分的直径;以及第二开口，形成在第一绝缘层中并与第一开口连续，其中靠近焊盘电极的部分的直径小于靠近半导体衬底的前表面的部分的直径。

3. 发明申请

US20060120010A1 Chucking method and processing method using the same 有权
公开(公告)号：US20060120010A1
公开(公告)日：2006-06-08
申请号：US11287484
申请日：2005-11-28
申请人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
发明人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
IPC分类号： H01T23/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： The invention provides an electrostatically chucking technology capable of chucking a workpiece formed of an insulator or a workpiece attached with an object to be processed such as a semiconductor wafer on a stage. A layered body attached with a glass substrate for supporting a semiconductor substrate having an electronic device on its surface is prepared, and a conductive film is attached thereto. Then, the layered body is set on a surface of a stage set in a vacuum chamber such as a dry-etching apparatus. After then, a voltage is applied to an internal electrode to generate positive and negative electric charges on the surfaces of the conductive film and the stage, and the layered body is chucked with static electricity generated therebetween. Then, the layered body chucked on the stage is processed by etching, CVD, or PVD.

4. 发明申请

US20060202348A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060202348A1
公开(公告)日：2006-09-14
申请号：US11362503
申请日：2006-02-27
申请人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
发明人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L24/11 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/12 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05548 , H01L2224/05569 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/15788 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括通过第一绝缘层形成在半导体衬底上的焊盘电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中通孔包括第一开口部，其靠近焊盘电极的部分的直径大于靠近半导体基板的背面的部分的直径;以及第二开口，形成在第一绝缘层中并与第一开口连续，其中靠近焊盘电极的部分的直径小于靠近半导体衬底的前表面的部分的直径。

5. 发明授权

US07495881B2 Chucking method and processing method using the same 有权
标题翻译：夹头方法和加工方法使用相同
公开(公告)号：US07495881B2
公开(公告)日：2009-02-24
申请号：US11287484
申请日：2005-11-28
申请人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
发明人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto
IPC分类号： H01L21/683 , H01T23/00 , H05F3/00 , F41B15/04 , H01G7/02
CPC分类号： H01L21/6833 , H01L21/6831
摘要： The invention provides an electrostatically chucking technology capable of chucking a workpiece formed of an insulator or a workpiece attached with an object to be processed such as a semiconductor wafer on a stage. A layered body attached with a glass substrate for supporting a semiconductor substrate having an electronic device on its surface is prepared, and a conductive film is attached thereto. Then, the layered body is set on a surface of a stage set in a vacuum chamber such as a dry-etching apparatus. After then, a voltage is applied to an internal electrode to generate positive and negative electric charges on the surfaces of the conductive film and the stage, and the layered body is chucked with static electricity generated therebetween. Then, the layered body chucked on the stage is processed by etching, CVD, or PVD.
摘要翻译：本发明提供了一种静电夹紧技术，其能够将由绝缘体形成的工件或与待处理物体（例如半导体晶片）相连的工件夹持在平台上。准备附着有用于支撑其表面上具有电子器件的半导体衬底的玻璃衬底的层状体，并且附着有导电膜。然后，将层叠体设置在设置在诸如干法蚀刻装置的真空室中的台的表面上。然后，在内部电极上施加电压，在导电膜和载物台的表面产生正，负电荷，并且层叠体之间产生静电。然后，通过蚀刻，CVD或PVD处理夹在平台上的分层体。

6. 发明授权

US07759247B2 Manufacturing method of semiconductor device with a barrier layer and a metal layer 有权
标题翻译：具有阻挡层和金属层的半导体器件的制造方法
公开(公告)号：US07759247B2
公开(公告)日：2010-07-20
申请号：US11822262
申请日：2007-07-03
申请人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama
发明人： Kojiro Kameyama , Akira Suzuki , Yoshio Okayama
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L27/14683 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05026 , H01L2224/05124 , H01L2224/05181 , H01L2224/05548 , H01L2224/05569 , H01L2224/05624 , H01L2224/05647 , H01L2224/16 , H01L2924/01078 , H01L2924/04941 , H01L2924/3025 , H01L2924/00014
摘要： This invention provides a semiconductor device and a manufacturing method thereof which can minimize deterioration of electric characteristics of the semiconductor device without increasing an etching process. In the semiconductor device of the invention, a pad electrode layer formed of a first barrier layer and an aluminum layer laminated thereon is formed on a top surface of a semiconductor substrate. A supporting substrate is further attached on the top surface of the semiconductor substrate. A second barrier layer is formed on a back surface of the semiconductor substrate and in a via hole formed from the back surface of the semiconductor substrate to the first barrier layer. Furthermore, a re-distribution layer is formed in the via hole so as to completely fill the via hole or so as not to completely fill the via hole. A ball-shaped terminal is formed on the re-distribution layer.
摘要翻译：本发明提供一种半导体器件及其制造方法，其可以在不增加蚀刻工艺的情况下最小化半导体器件的电特性的劣化。在本发明的半导体器件中，在半导体衬底的顶表面上形成由第一阻挡层和层叠在其上的铝层形成的焊盘电极层。支撑衬底进一步附着在半导体衬底的顶表面上。第二阻挡层形成在半导体衬底的背面和从半导体衬底的背面形成到第一阻挡层的通孔中。此外，在通孔中形成再分布层，以便完全填充通孔或不完全填充通孔。在再分配层上形成有球状的端子。

7. 发明授权

US07750478B2 Semiconductor device with via hole of uneven width 有权
标题翻译：具有不均匀宽度的通孔的半导体器件
公开(公告)号：US07750478B2
公开(公告)日：2010-07-06
申请号：US11808667
申请日：2007-06-12
申请人： Koujiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
发明人： Koujiro Kameyama , Akira Suzuki , Yoshio Okayama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/12 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/11 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/0508 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05548 , H01L2224/13025 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05599
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径靠近半导体衬底的背面的部分。

8. 发明授权

US07732925B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07732925B2
公开(公告)日：2010-06-08
申请号：US11055707
申请日：2005-02-11
申请人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
发明人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
IPC分类号： H01L29/40
CPC分类号： H01L24/12 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/11 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/0508 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05548 , H01L2224/13025 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05599
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径靠近半导体衬底的背面的部分。

9. 发明申请

US20050189637A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050189637A1
公开(公告)日：2005-09-01
申请号：US11055707
申请日：2005-02-11
申请人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
发明人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/12 , H01L23/31 , H01L23/48 , H01L23/495
CPC分类号： H01L24/12 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/11 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/0508 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05548 , H01L2224/13025 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05599
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径靠近半导体衬底的背表面的部分。

10. 发明申请

US20070249158A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070249158A1
公开(公告)日：2007-10-25
申请号：US11808667
申请日：2007-06-12
申请人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
发明人： Yoshio Okayama , Akira Suzuki , Koujiro Kameyama , Mitsuo Umemoto , Kenji Takahashi , Hiroshi Terao , Masataka Hoshino
IPC分类号： H01L21/4763
CPC分类号： H01L24/12 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/11 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/0508 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05548 , H01L2224/13025 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2224/05599
摘要： A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.
摘要翻译：提供了可靠性提高的半导体器件及其制造方法。本发明的半导体器件包括半导体衬底，通过由氧化硅，氮化硅等形成的绝缘层在半导体衬底上形成的焊盘电极，接合到半导体衬底的顶表面以覆盖衬垫的支撑板电极和形成在半导体衬底中并从半导体衬底的背表面延伸到焊盘电极的通孔，其中靠近焊盘电极的部分处的通孔的孔径大于通孔的孔径靠近半导体衬底的背面的部分。

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