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1. 发明申请

US20090269700A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20090269700A1
公开(公告)日：2009-10-29
申请号：US12428133
申请日：2009-04-22
申请人： Koji Yonemura , Makiko Irie , Hideo Hada
发明人： Koji Yonemura , Makiko Irie , Hideo Hada
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： A positive resist composition, including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the component (A) includes a structural unit (a1) derived from a hydroxystyrene, and a structural unit (a2) containing an acid dissociable, dissolution inhibiting group; and the component (B) includes an acid generator (B1) composed of a compound represented by the general formula (b1) shown below:[Chemical Formula 1] X-Q1-Y1—SO3− A+ (b1) (in the formula, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms which may contain a substituent or a fluorinated alkylene group of 1 to 4 carbon atoms which may contain a substituent; X represents a hydrocarbon group of 3 to 30 carbon atoms which may contain a substituent; and A+ represents an organic cation).
摘要翻译：一种正型抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括由羟基苯乙烯衍生的结构单元（a1）和含有酸解离的溶解抑制基团的结构单元（a2）组分（B）包括由以下通式（b1）表示的化合物组成的酸产生剂（B1）：[化学式1] X-Q1-Y1-SO3-A +（b1）（式中， Q1表示含有氧原子的二价连接基团; Y1表示可以含有取代基的1〜4个碳原子的亚烷基或可含有取代基的1〜4个碳原子的氟化亚烷基; X表示 3〜30个可含有取代基的碳原子; A +表示有机阳离子）。

2. 发明授权

US08187789B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08187789B2
公开(公告)日：2012-05-29
申请号：US12428133
申请日：2009-04-22
申请人： Koji Yonemura , Makiko Irie , Hideo Hada
发明人： Koji Yonemura , Makiko Irie , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： A positive resist composition, including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the component (A) includes a structural unit (a1) derived from a hydroxystyrene, and a structural unit (a2) containing an acid dissociable, dissolution inhibiting group; and the component (B) includes an acid generator (B1) composed of a compound represented by the general formula (b1) shown below: [Chemical Formula 1] X-Q1-Y1—SO3−A+ (b1) (in the formula, Q1 represents a bivalent linking group containing an oxygen atom; Y1 represents an alkylene group of 1 to 4 carbon atoms which may contain a substituent or a fluorinated alkylene group of 1 to 4 carbon atoms which may contain a substituent; X represents a hydrocarbon group of 3 to 30 carbon atoms which may contain a substituent; and A+ represents an organic cation).
摘要翻译：一种正型抗蚀剂组合物，包括在酸作用下在碱性显影液中显示出增加的溶解性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括由羟基苯乙烯衍生的结构单元（a1）和含有酸解离的溶解抑制基团的结构单元（a2）组分（B）包括由以下通式（b1）表示的化合物构成的酸产生剂（B1）：[化学式1] X-Q1-Y1-SO3-A +（b1）（式中， Q1表示含有氧原子的二价连接基团; Y1表示可以含有取代基的1〜4个碳原子的亚烷基或可含有取代基的1〜4个碳原子的氟化亚烷基; X表示 3〜30个可含有取代基的碳原子; A +表示有机阳离子）。

3. 发明授权

US08394569B2 Resist composition for immersion lithography and method for forming resist pattern 有权
标题翻译：浸渍光刻用抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08394569B2
公开(公告)日：2013-03-12
申请号：US12278376
申请日：2007-02-05
申请人： Makiko Irie , Takeshi Iwai
发明人： Makiko Irie , Takeshi Iwai
IPC分类号： G03F7/028 , G03F7/033 , G03F7/038 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a′) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用抗蚀剂组合物包括在酸作用下表现出碱溶性变化的树脂成分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的树脂（A1）和含有结构单元（a）的树脂（A2） '）衍生自丙烯酸而不是氟原子。

4. 发明申请

US20110165512A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20110165512A1
公开(公告)日：2011-07-07
申请号：US12940793
申请日：2010-11-05
申请人： Yoshiyuki Utsumi , Makiko Irie
发明人： Yoshiyuki Utsumi , Makiko Irie
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid-generator component (B) that generates acid upon exposure, and a nitrogen-containing organic compound (D), wherein the acid generator component (B) includes an acid generator (B1) consisting of a compound represented by general formula (b0), and the nitrogen-containing organic compound (D) includes a compound represented by general formula (d1) or general formula (d2) [wherein each of R1 and R2 represents an aryl group which may have a substituent, or an alkyl group which may have a substituent, Rf represents a fluorinated alkyl group which may have a substituent, X− represents a counter anion, each of R3 and R4 represents an aliphatic hydrocarbon group, R5 represents a hydrocarbon group having 5 or more carbon atoms, and each of R6 and R7 independently represents a hydrogen atom, an aliphatic hydrocarbon group which may have a substituent, or —C(═O)—O—R5].
摘要翻译：一种抗蚀剂组合物，其包含在酸作用下在碱显影液中溶解度变化的碱成分（A），曝光时产生酸的酸发生剂成分（B）和含氮有机化合物（D），其中，所述酸产生剂成分（B）含有由通式（b0）表示的化合物构成的酸发生剂（B1），所述含氮有机化合物（D）含有通式（d1）表示的化合物或通式（d2）[其中R 1和R 2各自表示可以具有取代基的芳基或可以具有取代基的烷基，Rf表示可以具有取代基的氟化烷基，X表示抗衡阴离子， R 3和R 4表示脂肪族烃基，R 5表示碳原子数5以上的烃基，R 6和R 7各自独立地表示氢原子，可以具有取代基的脂肪族烃基或-C（= O）-O-R 5]。

5. 发明申请

US20090117490A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸润光刻的正极性组合物和形成耐蚀图案的方法
公开(公告)号：US20090117490A1
公开(公告)日：2009-05-07
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/027 , G03F7/26
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

6. 发明申请

US20120264052A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND 有权
标题翻译：耐蚀组合物，形成耐火图案的方法和聚合物
公开(公告)号：US20120264052A1
公开(公告)日：2012-10-18
申请号：US13441200
申请日：2012-04-06
申请人： Makiko Irie , Tomoyuki Hirano , Daichi Takaki
发明人： Makiko Irie , Tomoyuki Hirano , Daichi Takaki
IPC分类号： G03F7/20 , C08F224/00 , C08F228/06 , G03F7/004
CPC分类号： G03F7/0397 , C08F224/00 , C08F228/06 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms).
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在显影液中显示改变的溶解度的碱成分（A）和曝光时产生酸的酸发生剂成分（B），含有树脂成分（A1 ）包括由下述通式（a0-1）表示的结构单元（a0）和衍生自可以具有与被取代基取代的被取代基取代的在α-位上的碳原子键合的丙烯酸酯的结构单元，并且含有通过酸（其中R表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基）的作用而显示出极性增加的酸可分解基团。

7. 发明授权

US07858288B2 Positive resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound 有权
标题翻译：用于浸渍曝光的正性抗蚀剂组合物，形成抗蚀剂图案的方法和含氟聚合物
公开(公告)号：US07858288B2
公开(公告)日：2010-12-28
申请号：US12108762
申请日：2008-04-24
申请人： Makiko Irie
发明人： Makiko Irie
IPC分类号： G03F7/039 , G03F7/20 , C08F18/20
CPC分类号： G03F7/2041 , C08F220/22 , C08F220/26 , G03F7/0046 , G03F7/0392 , G03F7/0397
摘要： A fluorine-containing polymeric compound obtained by polymerizing only polymerizable monomers represented by general formula (c1-0) shown below: wherein R1 represents a hydrogen atom or a methyl group; R2 represents an aliphatic hydrocarbon group substituted with fluorine atoms, or a group in which a plurality of aliphatic hydrocarbon groups which may be substituted with fluorine atoms are bonded through a linking group containing a hetero atom, with the proviso that at least one of the plurality of aliphatic hydrocarbon groups which may be substituted with fluorine atoms is an aliphatic hydrocarbon group substituted with fluorine atoms.
摘要翻译：通过仅聚合由下述通式（c1-0）表示的可聚合单体获得的含氟聚合物：其中R1表示氢原子或甲基; R2表示被氟原子取代的脂肪族烃基，或者可以被氟原子取代的多个脂肪族烃基通过含有杂原子的连接基团键合的基团，前提是多个可以被氟原子取代的脂族烃基是被氟原子取代的脂族烃基。

8. 发明授权

US07799507B2 Positive resist composition for immersion lithography and method for forming resist pattern 有权
标题翻译：用于浸渍光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07799507B2
公开(公告)日：2010-09-21
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

9. 发明申请

US20100167178A1 Oxime sulfonates and the use thereof as latent acids 审中-公开
标题翻译：肟磺酸盐及其作为潜酸的用途
公开(公告)号：US20100167178A1
公开(公告)日：2010-07-01
申请号：US12308279
申请日：2007-06-15
申请人： Hitoshi Yamato , Toshikage Asakura , Yuichi Nishimae , Takeshi Iwai , Makiko Irie , Kazuhiko Nakayama
发明人： Hitoshi Yamato , Toshikage Asakura , Yuichi Nishimae , Takeshi Iwai , Makiko Irie , Kazuhiko Nakayama
IPC分类号： C07C69/52 , C08F24/00 , C08F228/02 , G03C1/04 , C08F2/46 , G03F5/00 , G03F7/00
CPC分类号： G03F7/0045 , C07C309/00 , C07C2603/18 , C08F20/36 , G03F7/0046 , G03F7/0397
摘要： Compounds of the formula (I), (II) or (III), wherein R1 is for example C1-C18alkylsulfonyl, C1-C10haloalkylsulfonyl, camphorylsulfonyl, phenyl-C1-C3alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthrylsulfonyl, phenanthrylsulfonyl or heteroarylsulfonyl, R′1 is for example phenylenedisulfonyl, R2 is for example CN, C1-C10haloalkyl or C1-C10haloalkyl which is substituted by (IV); Ar1 is for example phenyl optionally substituted by a group of formula (IV); Ar′1 is for example phenylene which optionally is substituted by a group of formula (IV); A1, A2 and A3 independently of each other are for example hydrogen, halogen, CN, or C1-C18alkyl; D2 is for example a direct bond, O, (CO)O, (CO)S, SO2, OSO2 or C1-C18alkylene; or A3 and D2 together form C3-C30cycloalkenyl; or A2 and D2 together with the carbon of the ethylenically unsaturated double bond to which they are attached form C3-C30cycloalkyl; D3 and D4 for example independently of each other are a direct bond, O, S, C1-C18alkylene or C3-C30cycloalkylene provided that at least one of the radicals R2, Ar1 or Ar′1 comprises a group of the formula (IV); are suitable as photolatent acid donors and for the preparation of corresponding polymers to be employed in chemically amplified photoresists.
摘要翻译：式（I），（II）或（III）的化合物，其中R 1是例如C 1 -C 18烷基磺酰基，C 1 -C 10卤代烷基磺酰基，樟脑磺酰基，苯基-C 1 -C 3烷基磺酰基，苯基磺酰基，萘基磺酰基，蒽基磺酰基，菲基磺酰基或杂芳基磺酰基，R'1 是例如亚苯基二磺酰基，R 2是例如CN，被C 1 -C 10卤代烷基或被（IV）取代的C 1 -C 10卤代烷基; Ar 1是例如任选被式（Ⅳ）基团取代的苯基; Ar 1是例如任选被式（IV）的基团取代的亚苯基; A1，A2和A3彼此独立地是例如氢，卤素，CN或C 1 -C 18烷基; D2例如是直接键合O，（CO）O，（CO）S，SO 2，OSO 2或C 1 -C 18亚烷基; 或A3和D2一起形成C 3 -C 30环烯基; 或A2和D2与它们所连接的烯属不饱和双键的碳一起形成C 3 -C 30环烷基; D3和D4彼此独立地是直接键合O，S，C 1 -C 18亚烷基或C 3 -C 30环烷基，条件是基团R 2，Ar 1或Ar'1中的至少一个包含式（Ⅳ）基团。适合作为光潜酸供体，并用于制备用于化学放大光致抗蚀剂的相应聚合物。

10. 发明申请

US20090042132A1 RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸入光刻的耐蚀组合物和形成耐蚀图案的方法
公开(公告)号：US20090042132A1
公开(公告)日：2009-02-12
申请号：US12278376
申请日：2007-02-05
申请人： Makiko Irie , Takeshi Iwai
发明人： Makiko Irie , Takeshi Iwai
IPC分类号： G03C1/675 , G03C1/73 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a′) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用抗蚀剂组合物包括在酸作用下表现出碱溶性变化的树脂成分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的树脂（A1）和含有结构单元（a）的树脂（A2） '）衍生自丙烯酸而不是氟原子。

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