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    • 2. 发明授权
    • Semiconductor acceleration sensor
    • 半导体加速度传感器
    • US07464591B2
    • 2008-12-16
    • US11579178
    • 2006-01-20
    • Yoshihisa FukudaKouji SakaiAtsushi IshigamiEiichi FurukuboRyosuke MeshiiTakashi Yajima
    • Yoshihisa FukudaKouji SakaiAtsushi IshigamiEiichi FurukuboRyosuke MeshiiTakashi Yajima
    • G01P15/02G01P15/00
    • G01P15/08G01P2015/0871
    • A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions. Thus, even when a side impact is applied to the acceleration sensor, the weight part is prevented from moving significantly, thereby preventing an excessive stress from being applied to the beam parts to break the beam parts.
    • 一种半导体加速度传感器,其具有形成为大致L形以包围重量部分的梁部分,其中形成为包围正方形部分,如在平面图中看到并构成重量部分的两个细长L形梁部分,在靠近的位置 其基端部形成有从固定部朝向配重部突出的突出部,并且容纳从重物部朝向固定部突出以包围突出部的凹部。 突出部具有与容纳凹部的内壁面大致相同的外形,使得重量部在与上下方向垂直的水平方向上的任何方向上的移动受到限制 突出部分由接收凹部。 因此,即使当对加速度传感器施加侧面冲击时,防止重量部分显着移动,从而防止过大的应力施加到梁部分以破坏梁部分。
    • 3. 发明申请
    • Semiconductor Acceleration Sensor
    • 半导体加速度传感器
    • US20080022770A1
    • 2008-01-31
    • US11579178
    • 2006-01-20
    • Yoshihisa FukudaKouji SakaiAtsushi IshigamiEiichi FurukuboRyosuke MeshiiTakashi Yajima
    • Yoshihisa FukudaKouji SakaiAtsushi IshigamiEiichi FurukuboRyosuke MeshiiTakashi Yajima
    • G01P15/02
    • G01P15/08G01P2015/0871
    • A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions. Thus, even when a side impact is applied to the acceleration sensor, the weight part is prevented from moving significantly, thereby preventing an excessive stress from being applied to the beam parts to break the beam parts.
    • 一种半导体加速度传感器,其具有形成为大致L形以包围重量部分的梁部分,其中形成为包围正方形部分,如在平面图中看到并构成重量部分的两个细长L形梁部分,在靠近的位置 其基端部形成有从固定部朝向配重部突出的突出部,并且容纳从重物部朝向固定部突出以包围突出部的凹部。 突出部具有与容纳凹部的内壁面大致相同的外形,使得重量部在与上下方向垂直的水平方向上的任何方向上的移动受到限制 突出部分由接收凹部。 因此,即使当对加速度传感器施加侧面冲击时,防止重量部分显着移动,从而防止过大的应力施加到梁部分以破坏梁部分。
    • 4. 发明授权
    • Semiconductor physical quantity sensor of electrostatic capacitance type and method for manufacturing the same
    • 静电电容型半导体物理量传感器及其制造方法
    • US07799595B2
    • 2010-09-21
    • US10599396
    • 2005-12-12
    • Ryosuke MeshiiKouji SakaiAtsushi IshigamiEiichi Furukubo
    • Ryosuke MeshiiKouji SakaiAtsushi IshigamiEiichi Furukubo
    • H01L21/00H01L21/76
    • G01L9/0042G01L1/14
    • In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed. By manufacturing the sensor in this manner, the fixed electrode of the insulating substrate is made equipotential to the movable electrode of the semiconductor substrate when the insulating substrate is anodically bonded to the semiconductor substrate, thereby preventing discharge from occurring. Accordingly, it is possible to obtain a high bonding strength and desired sensor characteristics without causing bonding voids to occur and a sensor chip to increase in size.
    • 在静电电容型的半导体物理量传感器中,与玻璃基板和硅基板的相互面对的周边区域(接合区域)接触进行阳极接合,同时两基板之间具有阳极接合电压, 被整合。 在硅衬底的接合面侧表面上形成固定电极,而在半导体衬底的接合面侧表面形成可动电极。 在阳极接合之前的接合区域内的玻璃基板的接合面侧面上形成有将固定电极短路到可动电极的等电位线作为阳极接合放电的对策。 阳极接合后,等电位线被切断并移除。 通过以这种方式制造传感器,当绝缘基板被阳极结合到半导体基板上时,使绝缘基板的固定电极与半导体基板的可动电极等电位,从而防止发生放电。 因此,可以获得高的接合强度和期望的传感器特性,而不会发生接合空隙和传感器芯片的尺寸增大。
    • 5. 发明申请
    • Semiconductor physical quantity sensor of electrostatic capacitance type and method for manufacturing the same
    • 静电电容型半导体物理量传感器及其制造方法
    • US20070176249A1
    • 2007-08-02
    • US10599396
    • 2005-12-12
    • Ryosuke MeshiiKouji SakaiAtsushi IshigamiEichi Furukubo
    • Ryosuke MeshiiKouji SakaiAtsushi IshigamiEichi Furukubo
    • H01L29/84H01L21/00
    • G01L9/0042G01L1/14
    • In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed. By manufacturing the sensor in this manner, the fixed electrode of the insulating substrate is made equipotential to the movable electrode of the semiconductor substrate when the insulating substrate is anodically bonded to the semiconductor substrate, thereby preventing discharge from occurring. Accordingly, it is possible to obtain a high bonding strength and desired sensor characteristics without causing bonding voids to occur and a sensor chip to increase in size.
    • 在静电电容型的半导体物理量传感器中,与玻璃基板和硅基板的相互面对的周边区域(接合区域)接触进行阳极接合,同时两基板之间具有阳极接合电压, 被整合。 在硅衬底的接合面侧表面上形成固定电极,而在半导体衬底的接合面侧表面形成可动电极。 在阳极接合之前的接合区域内的玻璃基板的接合面侧面上形成有将固定电极短路到可动电极的等电位线作为阳极接合放电的对策。 阳极接合后,等电位线被切断并移除。 通过以这种方式制造传感器,当绝缘基板被阳极结合到半导体基板上时,使绝缘基板的固定电极与半导体基板的可动电极等电位,从而防止发生放电。 因此,可以获得高的接合强度和期望的传感器特性,而不会发生接合空隙和传感器芯片的尺寸增大。