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1. 发明申请

US20060035170A1 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
公开(公告)号：US20060035170A1
公开(公告)日：2006-02-16
申请号：US11258274
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03C1/76
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

2. 发明授权

US07063934B2 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 失效
公开(公告)号：US07063934B2
公开(公告)日：2006-06-20
申请号：US10147984
申请日：2002-05-20
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/038 , G03F7/11 , G03F7/40 , G03F7/023
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

3. 发明授权

US07419769B2 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
标题翻译：用于形成厚膜，光致抗蚀剂膜的负光致抗蚀剂组合物和使用其形成凸块的方法
公开(公告)号：US07419769B2
公开(公告)日：2008-09-02
申请号：US11258273
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/40
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.
摘要翻译：负型光致抗蚀剂组合物用于形成厚膜，包括（A）酚醛清漆树脂，（B）增塑剂，（C）交联剂和（D）酸产生剂。将该组合物涂布在基材上，由此得到5至100μm厚的光致抗蚀剂膜。同样地，将组合物施加到电子部件的基板上，被图案化，被镀覆，从而产生凸块。

4. 发明授权

US07129018B2 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
公开(公告)号：US07129018B2
公开(公告)日：2006-10-31
申请号：US11258274
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

5. 发明申请

US20060035169A1 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
公开(公告)号：US20060035169A1
公开(公告)日：2006-02-16
申请号：US11258273
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03C1/76
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

6. 发明授权

US06641972B2 Positive photoresist composition for the formation of thick films, photoresist film and method of forming bumps using the same 有权
标题翻译：用于形成厚膜的正性光致抗蚀剂组合物，光致抗蚀剂膜以及使用其形成凸块的方法
公开(公告)号：US06641972B2
公开(公告)日：2003-11-04
申请号：US10090170
申请日：2002-03-05
申请人： Kouichi Misumi , Koji Saito , Toshiki Okui , Hiroshi Komano
发明人： Kouichi Misumi , Koji Saito , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7023
CPC分类号： G03F7/0233 , G03F7/022
摘要： A positive photoresist composition includes an alkali-soluble novolak resin (A), an alkali-soluble acrylic resin (B) and a quinonediazido-group-containing compound (C) and is used for the formation of a thick film 5 to 100 &mgr;m thick. The ingredient (B) includes 30% to 90% by weight of a unit (b1) derived from a polymerizable compound having an ether bond and 2% to 50% by weight of a unit (b2) derived from a polymerizable compound having a carboxyl group. The composition is applied on a substrate and thereby yields a photoresist film. Likewise, the composition is applied onto a substrate on an electronic part, is patterned, is plated and thereby yields bumps.
摘要翻译：正型光致抗蚀剂组合物包括碱溶性酚醛清漆树脂（A），碱溶性丙烯酸树脂（B）和含醌二叠氮基的化合物（C），并用于形成厚度为5至100μm厚的厚膜。成分（B）含有30重量％〜90重量％的衍生自具有醚键的聚合性化合物的单元（b1）和2重量％〜50重量％的来自具有羧基的聚合性化合物的单元（b2）组。将组合物施加在基材上，从而得到光致抗蚀剂膜。同样地，将组合物施加到电子部件上的基板上，被图案化，被镀覆，从而产生凸块。

7. 发明授权

US06838229B2 Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same 有权
标题翻译：用于形成厚膜，光致抗蚀剂基材的化学放大负性光致抗蚀剂组合物和使用其形成凸块的方法
公开(公告)号：US06838229B2
公开(公告)日：2005-01-04
申请号：US10194298
申请日：2002-07-15
申请人： Yasushi Washio , Koji Saito , Toshiki Okui , Hiroshi Komano
发明人： Yasushi Washio , Koji Saito , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/004 , G03F7/038 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/106 , Y10S430/115 , Y10S430/128
摘要： A chemically amplified negative photoresist composition is used for the formation of thick films having a thickness of 20 to 150 μm and includes (A) an alkali-soluble resin, (B) a compound which generates an acid upon irradiation with active light or radiant ray, and (C) a compound which serves as a crosslinking agent in the presence of an acid. The alkali-soluble resin (A) includes (a1) a novolak resin having a weight average molecular weight of from 5000 to 10000, and (a2) a polymer containing at least a hydroxystyrene constitutional unit and having a weight average molecular weight of less than or equal to 5000.
摘要翻译：化学放大型负性光致抗蚀剂组合物用于形成厚度为20至150μm的厚膜，并且包括（A）碱溶性树脂，（B）在用活性光或辐射线照射时产生酸的化合物，和（C）在酸存在下用作交联剂的化合物。碱溶性树脂（A）包括（a1）重均分子量为5000〜10000的酚醛清漆树脂，（a2）至少含有羟基苯乙烯结构单元且重均分子量小于或等于5000。

8. 发明授权

US5908734A Image formation method with a post exposure heating step 失效
标题翻译：具有后曝光加热步骤的图像形成方法
公开(公告)号：US5908734A
公开(公告)日：1999-06-01
申请号：US890309
申请日：1997-07-09
申请人： Toshiki Okui , Takeshi Iwai , Hiroshi Komano
发明人： Toshiki Okui , Takeshi Iwai , Hiroshi Komano
IPC分类号： G03F7/027 , G03F7/00 , G03F7/028 , G03F7/029 , G03F7/038 , G03F7/20 , G03F7/38 , H05K3/00 , G03C5/56
CPC分类号： G03F7/029 , G03F7/38 , H05K3/0082 , Y10S430/146
摘要： An image formation method which comprises: (a) selectively exposing a photosensitive layer with a visible laser beam, (b) heating the exposed photosensitive layer at a temperature of from 36 to 48.degree. C. for 10 seconds to 3 minutes, and (c) developing the photosensitive layer.
摘要翻译：一种图像形成方法，包括：（a）用可见激光束选择性地曝光感光层，（b）在36至48℃的温度下加热曝光的感光层10秒至3分钟，和（c ）显影感光层。

9. 发明授权

US06846949B2 Fluorine-containing monomeric ester compound for base resin in photoresist composition 有权
标题翻译：用于光致抗蚀剂组合物中的基础树脂的含氟单体酯化合物
公开(公告)号：US06846949B2
公开(公告)日：2005-01-25
申请号：US10732418
申请日：2003-12-11
申请人： Toshiyuki Ogata , Kotaro Endo , Hiroshi Komano
发明人： Toshiyuki Ogata , Kotaro Endo , Hiroshi Komano
IPC分类号： C07C69/00 , C07C69/653 , C07C69/52 , C07C69/62
CPC分类号： C07C69/653 , C07C2602/42 , C07C2603/74 , G03F7/0046 , G03F7/0397
摘要： The invention discloses a novel ester compound of an unsaturated carboxylic acid represented by the general formula in which R1 is preferably a hydrogen atom or methyl group, R2 is preferably a trifluoromethyl group, R3 is a non-aromatic polycyclic hydrocarbon group or, preferably, an adamantyl group and R4 is preferably a hydrogen atom or methyl group. This unsaturated ester compound is polymerizable to give a (co)polymeric resin which can be used as a base resinous ingredient in a photoresist composition for light exposure with ultraviolet light of a very short wavelength by virtue of the high transparency to the short-wavelength light. A synthetic method for the preparation of the novel ester compound is disclosed.
摘要翻译：本发明公开了一种由通式表示的不饱和羧酸的酯化合物，其中R 1优选为氢原子或甲基，R 2优选为三氟甲基，R 3为非芳族多环烃基或优选金刚烷基，R 4优选为氢原子或甲基。这种不饱和酯化合物是可聚合的，得到（共）聚合物树脂，其可以用作光致抗蚀剂组合物中的基础树脂成分，用于通过对短波长光的高透明度而具有非常短的波长的紫外光进行曝光。公开了一种制备新型酯化合物的合成方法。

10. 发明授权

US06388101B1 Chemical-sensitization photoresist composition 有权
标题翻译：化学增感光刻胶组合物
公开(公告)号：US06388101B1
公开(公告)日：2002-05-14
申请号：US09562458
申请日：2000-05-02
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano
IPC分类号： C07D30512
CPC分类号： C07D307/33 , G03F7/0392 , Y02P20/55
摘要： Proposed is a chemical-sensitization positive-working photoresist composition for photolithographic patterning in the manufacture of semiconductor devices having high transparency even to ultraviolet light of very short wavelength such as ArF excimer laser beams of 193 nm wavelength to exhibit high photosensitivity and capable of giving a patterned resist layer with high pattern resolution. The composition comprises (A) a resinous ingredient which is subject to an increase of the solubility in an aqueous alkaline developer solution in the presence of an acid and (B) a radiation-sensitive acid-generating compound. Characteristically, the resinous ingredient as the component (A) is a (meth)acrylic copolymer of which from 20% to 80% by moles of the monomeric units are derived from a (meth)acrylic acid ester of which the ester-forming group has a specific oxygen-containing heterocyclic ring structure.
摘要翻译：提出了一种用于制造半导体器件的化学增感正性光致抗蚀剂组合物，即使对于非常短波长的紫外光也具有高透明度，例如193nm波长的ArF准分子激光束，以显示高光敏性，并且能够给出具有高图案分辨率的图案化抗蚀剂层。组合物包含（A）在酸的存在下在碱性显影剂水溶液中溶解度增加的树脂成分和（B）辐射敏感的产酸化合物。特征在于，作为（A）成分的树脂成分是（甲基）丙烯酸系共聚物，20〜80摩尔％的单体单元衍生自成酯基的（甲基）丙烯酸酯特定的含氧杂环结构。

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