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    • 6. 发明申请
    • LEVER TYPE CONNECTOR
    • 杠杆式连接器
    • US20130102172A1
    • 2013-04-25
    • US13808136
    • 2011-07-07
    • Tohru KobayashiTohru Suzuki
    • Tohru KobayashiTohru Suzuki
    • H01R13/629
    • H01R13/62955H01R13/62933H01R13/62938
    • A lever type connector in which workability in inserting terminals is enhanced is provided. A lever type connector 1 includes a connector housing 22 for containing terminals 61 at terminal ends of wires, and a lever 30 which is rotatably mounted on the connector housing 22, and rotated at a wire extending side of the connector housing 22 thereby to move a mating connector to be engaged with the connector housing 22 up to a normally engaged position. The lever 30 includes a pair of arm parts 31 (31a, 31b), and a connecting part 38 for interconnecting respective base end parts 51 (51a, 51b) of the arm parts 31. A recess part 53 for enlarging a distance between the base end parts 51 is provided on at least one of inner walls 50 (50a, 50b) of the base end parts 51 of the arm parts 31 which are opposed to each other.
    • 提供了一种提高了插入端子的可加工性的杠杆式连接器。 杠杆式连接器1包括用于在电线的末端容纳端子61的连接器壳体22和可旋转地安装在连接器壳体22上并在连接器壳体22的线延伸侧旋转的杆30,从而移动 配合连接器将与连接器壳体22接合直到正常接合位置。 杆30包括一对臂部31(31a,31b)和用于互连臂部31的各个基端部51(51a,51b)的连接部38.用于扩大基部之间的距离的凹部53 端部51设置在彼此相对的臂部31的基端部51的至少一个内壁50(50a,50b)上。
    • 9. 发明授权
    • Avalanche breakdown semiconductor device
    • 雪崩击穿半导体器件
    • US4999683A
    • 1991-03-12
    • US458398
    • 1989-12-28
    • Akio KiyomuraTakayoshi TerashimaTohru Suzuki
    • Akio KiyomuraTakayoshi TerashimaTohru Suzuki
    • H01L29/866H01L29/87
    • H01L29/866H01L29/87
    • A Zener diode comprising a semiconductor substrate having an n-type region partly exposed at a main force of the substrate, a p.sup.+ -type region disposed contiguous to the n-type region and exposed at the main face of the semiconductor substrate, and an n.sup.+ -type region also exposed at the main face of the substrate and contiguously surrounded by the p.sup.+ -type region besides being contiguous to the p.sup.+ -type region. The arrangement of the semiconductor regions in relation to one another, and an an insulating layer on the main face of the substrate and to a pair of electrodes thereon, is such that the breakdown voltage is free from the influence of temperatures and of the ions contained in the insulating layer.
    • 一种齐纳二极管,包括:半导体衬底,其具有以衬底的主力部分地暴露的n型区域,与所述n型区域邻接并暴露在所述半导体衬底的主面处的p +型区域,以及n + 型区域也暴露在基板的主面上,并连续地被p +型区域包围,除了与p +型区域相邻。 半导体区域相对于彼此的布置,以及基板的主面上的绝缘层和其上的一对电极,使得击穿电压不受温度和所含离子的影响 在绝缘层中。
    • 10. 发明授权
    • Method and apparatus of surveying nodular targets on the sea floor
    • 测量海底结节目标的方法和装置
    • US4319348A
    • 1982-03-09
    • US125590
    • 1980-02-28
    • Tohru Suzuki
    • Tohru Suzuki
    • G01S15/88G01V1/38G01S15/04
    • G01V1/3808G01S15/88
    • In a method and apparatus for surveying for nodular targets of a grain size of 1 to 15 cm present on the sea floor, pulse waves in each of three frequency ranges of 3 to 4, 10 to 14 and 25 to 50 KHz are radiated onto the sea floor from a ship navigating on the sea. The reflected sound waves of the three frequency pulse waves are received and the reflexibilities of the respective sound waves are measured from the reflected sound pressures and the reflexibilities are composed. The population of the nodular targets is determined from the composed reflexibility and, as required, the grain size of the nodular targets can be determined from at least one of the ratio of the reflexibility of the sound waves of the frequency range of 3 to 4 KHz to the composed reflexibility and the ratio of the reflexibility of the sound waves of the frequency range of 3 to 4 KHz to the reflexibility of the sound waves of range of 25 to 50 KHz.
    • 在海床上存在1〜15cm的粒度的结节靶的测定方法和装置中,将3〜4,10〜14和25〜50KHz的3个频率范围的各波形的脉波放射到 从海上航行的船只的海底。 接收三个频率脉冲波的反射声波,并从反射的声压测量各个声波的反射性,构成反射性。 结节目标的群体由组成的反射性确定,并且根据需要,可以从3至4KHz的频率范围的声波的反射率的比率中的至少一个来确定结节目标的晶粒尺寸 对于组合的反射率和3至4KHz的频率范围的声波的反射率与25至50KHz范围的声波的反射率的比率。