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1. 发明授权

US06319649B1 Photosensitive resin composition and method of forming resist images 失效
标题翻译：光敏树脂组合物和形成抗蚀剂图像的方法
公开(公告)号：US06319649B1
公开(公告)日：2001-11-20
申请号：US09024873
申请日：1998-02-17
申请人： Koji Kato , Masahiro Hashimoto , Michiaki Hashimoto , Toshio Sakamizu , Hiroshi Shiraishi
发明人： Koji Kato , Masahiro Hashimoto , Michiaki Hashimoto , Toshio Sakamizu , Hiroshi Shiraishi
IPC分类号： G03F7021
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified photosensitive resin composition containing a first compound forming an acid by irradiation of actinic ray and a second compound that changes the solubility to an aqueous alkali solution with acid-catalyzed reaction wherein an ion dissociative compound having the composition represented by the general formula (1) or (2), as well a method of forming a resist pattern using the composition are disclosed, the formulae being expressed by: where each of R2, R3 and R4 represents hydrogen, and an alkyl or aryl group of 1 to 7 carbon atoms, at least one of R1, R2, R3 and R4 represents hydrogen, Y1 represents chlorine, bromine, iodine, carbonate group of 1 to 7 carbon atoms or sulfonate group of 1 to 7 carbon atoms, and
摘要翻译：一种化学放大型光敏树脂组合物，其含有通过光化射线照射形成酸的第一化合物和通过酸催化反应改变其对碱性水溶液的溶解度的第二化合物，其中具有由通式表示的组成的离子解离化合物（ 1）或（2），以及使用该组合物形成抗蚀剂图案的方法，其公式表示为：其中R2，R3和R4各自表示氢，并且具有1至7个碳原子的烷基或芳基 R1，R2，R3和R4中的至少一个表示氢，Y1表示氯，溴，碘，1〜7个碳原子的碳酸酯基或1〜7个碳原子的磺酸酯基，

2. 发明申请

US20140094555A1 CARBON-FIBER-REINFORCED PLASTIC AND PROCESS FOR PRODUCING SAME 有权
标题翻译：碳纤维增强塑料及其制造方法
公开(公告)号：US20140094555A1
公开(公告)日：2014-04-03
申请号：US14122501
申请日：2012-04-18
申请人： Takafumi Hashimoto , Hirohito Minowa , Takashi Shimada , Masahiro Hashimoto , Katsuhiro Miyoshi , Yoshihiro Naruse
发明人： Takafumi Hashimoto , Hirohito Minowa , Takashi Shimada , Masahiro Hashimoto , Katsuhiro Miyoshi , Yoshihiro Naruse
IPC分类号： C08K3/04 , B29C70/06
CPC分类号： C08K3/04 , B29C70/06 , B29C70/14 , C08J5/042 , C08J5/24 , C08J2300/22 , C08J2377/00
摘要： A carbon-fiber-reinforced plastic prepared by impregnating a matrix resin into a sheet-like base material includes discontinuous carbon fibers, wherein a content ratio of carbon fibers having lengths of 10 mm or longer in the base material is 60 wt % or more relative to a total amount of the carbon fibers, and an average value of orientation degrees of carbon fibers contained in the base material is 2-10.
摘要翻译：通过将基质树脂浸渍到片状基材中而制备的碳纤维增强塑料包括不连续的碳纤维，其中基材中长度为10mm以上的碳纤维的含量比例为60重量％以上相对于碳纤维的总量，基材中所含的碳纤维的取向度的平均值为2-10。

3. 发明申请

US20130177841A1 MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND TRANSFER MASK 有权
标题翻译：掩模布，其制造方法和转印掩模
公开(公告)号：US20130177841A1
公开(公告)日：2013-07-11
申请号：US13823206
申请日：2011-09-29
申请人： Kazuya Sakai , Masahiro Hashimoto , Takeyuki Yamada
发明人： Kazuya Sakai , Masahiro Hashimoto , Takeyuki Yamada
IPC分类号： G03F1/50
CPC分类号： G03F1/50 , G03F1/38
摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.
摘要翻译：提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。薄膜2具有含有烃的氧化膜形式的表面改性层。薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。

4. 发明授权

US08221941B2 Photomask blank manufacturing method and photomask manufacturing method 有权
标题翻译：光掩模坯料制造方法和光掩模制造方法
公开(公告)号：US08221941B2
公开(公告)日：2012-07-17
申请号：US12647808
申请日：2009-12-28
申请人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
发明人： Toshiyuki Suzuki , Masahiro Hashimoto , Kazunori Ono , Ryo Ohkubo , Kazuya Sakai
IPC分类号： G03F1/22
CPC分类号： G03F1/32
摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.
摘要翻译：在透光性基板上形成由含有金属和硅的材料构成的薄膜。然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时，薄膜图案的转印特性不会超过预定的程度。该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。

5. 发明申请

US20120129084A1 PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权
标题翻译：光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法
公开(公告)号：US20120129084A1
公开(公告)日：2012-05-24
申请号：US13347425
申请日：2012-01-10
申请人： Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
发明人： Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
IPC分类号： G03F1/50
CPC分类号： G03F1/32 , G03F1/50 , G03F1/54 , G03F1/80
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译：一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。

6. 发明申请

US20120100466A1 MASK BLANK AND TRANSFER MASK 有权
标题翻译：遮罩和转印面罩
公开(公告)号：US20120100466A1
公开(公告)日：2012-04-26
申请号：US13260295
申请日：2010-03-30
申请人： Masahiro Hashimoto , Hiroyuki Iwashita , Yasushi Okubo , Osamu Nozawa
发明人： Masahiro Hashimoto , Hiroyuki Iwashita , Yasushi Okubo , Osamu Nozawa
IPC分类号： G03F1/46 , G03F1/50 , B82Y30/00
CPC分类号： G03F1/46 , G03F1/50 , G03F1/58
摘要： A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when the DRAM half pitch (hp) specified in semiconductor device design specifications is 32 nm or less. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20 is 2.8 or more.
摘要翻译：当在半导体器件设计规范中规定的DRAM半间距（hp）为32nm以下时，能够克服由电磁场（EMF）效应引起的问题的掩模空白和传送掩模。掩模坯料用于制造施加ArF曝光光的转印掩模，并且包括具有多层结构的遮光膜10。多层结构包括形成在透明基板1上的遮光层11和表面防反射层12.在遮光膜10上形成辅助遮光膜20.遮光膜10的厚度为40nm 曝光光的光密度为2.0以上且2.7以下。遮光膜10和辅助遮光膜20的多层结构中的曝光光的光密度为2.8以上。

7. 发明申请

US20120045713A1 PHOTOMASK BLANK, METHOD OF MANUFACTURING THE SAME, PHOTOMASK, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： PHOTOMASK BLANK，其制造方法，照相机及其制造方法
公开(公告)号：US20120045713A1
公开(公告)日：2012-02-23
申请号：US13201368
申请日：2010-02-04
申请人： Masahiro Hashimoto , Toshiyuki Suzuki , Hiroyuki Iwashita
发明人： Masahiro Hashimoto , Toshiyuki Suzuki , Hiroyuki Iwashita
IPC分类号： G03F1/00 , G03F1/48 , G03F1/80 , G03F1/50
CPC分类号： G03F1/50 , G03F1/32 , G03F1/54
摘要： A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.
摘要翻译：用于制造适用于具有200nm以下的波长的曝光光的光掩模的光掩模坯料在透明基板上具有薄膜。薄膜由含有过渡金属，硅和碳的材料制成，并且包含碳化硅和/或过渡金属碳化物。

8. 发明授权

US08114556B2 Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权
标题翻译：光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法
公开(公告)号：US08114556B2
公开(公告)日：2012-02-14
申请号：US12066360
申请日：2006-09-08
申请人： Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
发明人： Takeyuki Yamada , Atsushi Kominato , Hiroyuki Iwashita , Masahiro Hashimoto , Yasushi Okubo
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/50 , G03F1/54 , G03F1/80
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译：提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料，以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。

9. 发明申请

US20110111332A1 PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK 有权
标题翻译：相移屏蔽层和相位移屏蔽
公开(公告)号：US20110111332A1
公开(公告)日：2011-05-12
申请号：US13001365
申请日：2009-06-25
申请人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
发明人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
IPC分类号： G03F1/00
CPC分类号： G03F1/58 , G03F1/32
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译：本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中从靠近透光基底的一侧依次层叠下层，中间层和上层; 整个遮光膜的厚度为60nm以下; 下层由含有金属的膜制成，具有第一蚀刻速率; 上层由含有金属的膜制成，具有第三蚀刻速率; 中间层由含有与下层或上层相同的金属的膜制成，具有比第一蚀刻速度和第三蚀刻速度低的第二蚀刻速率; 并且中间层的厚度为整个遮光膜的厚度的30％以下。

10. 发明授权

US07935461B2 Phase shift mask blank, phase shift mask, and method for manufacturing phase shift mask blank 有权
标题翻译：相移掩模空白，相移掩模和用于制造相移掩模空白的方法
公开(公告)号：US07935461B2
公开(公告)日：2011-05-03
申请号：US12489866
申请日：2009-06-23
申请人： Osamu Nozawa , Masahiro Hashimoto
发明人： Osamu Nozawa , Masahiro Hashimoto
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54
摘要： Problem: There is a demand for a phase shift mask that makes it possible to decrease the film thickness of the phase shift film, can satisfy the requirement relating to pattern accuracy, without collapsing the OPC pattern, and enables control of optical characteristics and pattern defect inspection, and also for a phase shift mask blank as an original plate for such a phase shift mask.Means for Solving the Problems: A phase shift mask blank of the present invention has, on a transparent substrate, a phase shift film including, as main components, a metal, silicon (Si) and nitrogen (N), having optical characteristics of a transmittance of equal to or greater than 9% and equal to or less than 30% with respect to a wavelength of the ArF excimer laser beam and a phase difference of equal to or greater than 150° and less than 180°, and a light-shielding film formed on the phase shift film. A thickness of the phase shift film is equal to or less than 80 nm, and a refractive index (n) with respect to the wavelength of the ArF excimer laser beam is equal to or greater than 2.3, and an extinction coefficient (k) is equal to or greater than 0.28.
摘要翻译：问题：需要可以降低相移膜的膜厚的相移掩模，可以满足与图案精度有关的要求，而不会使OPC图案折叠，并且能够控制光学特性和图案缺陷检查，以及用于这种相移掩模的相移掩模坯料作为原始板。解决问题的手段本发明的相移掩模坯料在透明基板上具有包括金属，硅（Si）和氮（N）作为主要成分的相移膜，其具有光学特性为透射率相对于ArF准分子激光的波长等于或大于9％且等于或小于30％，相位差等于或大于150°且小于180°，形成在相移膜上的屏蔽膜。相移膜的厚度等于或小于80nm，并且相对于ArF准分子激光束的波长的折射率（n）等于或大于2.3，消光系数（k）为等于或大于0.28。

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