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1. 发明申请

US20070114598A1 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US20070114598A1
公开(公告)日：2007-05-24
申请号：US10581664
申请日：2004-12-03
申请人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
发明人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7813
摘要： The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.
摘要翻译：本发明涉及通过增加深区域（26）和中间区域（28）中的少数载流子的浓度来降低半导体器件的导通电压的技术。根据本发明的半导体器件包括电极，连接到电极的第二导电类型的顶部区域（36），第二导电类型的深区域和连接到电极的第一导电类型的中间区域。中间区域的一部分隔离顶部区域和深部区域。半导体器件还包括经由绝缘层面对中间区域的部分的栅电极（32）。面对栅电极的部分隔离顶部区域和深部区域。根据本发明的半导体器件还包括形成在中间区域和/或顶部区域内的阻挡区域（40）。

2. 发明授权

US07598566B2 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US07598566B2
公开(公告)日：2009-10-06
申请号：US10579228
申请日：2004-11-05
申请人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
发明人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/4238 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.
摘要翻译：本发明提供一种用于在身体区域中累积少数载流子的技术，即介于顶部区域和深部区域之间的中间区域，从而增加中间区域中的少数载流子的浓度。半导体器件具有第二导电类型的顶部区域（34），第二导电类型的深度区域（26）和用于隔离顶部区域和深度区域的第一导电类型的中间区域（28）。半导体器件还具有通过绝缘层（33）与中间区域的一部分相对的沟槽栅极（32）。面向沟槽栅的部分隔离了顶部区域和深部区域。沟槽门沿纵向方向延伸。沟槽栅的宽度沿纵向不均匀; 相反，沟槽栅的宽度沿着纵向方向变化。

3. 发明授权

US07737491B2 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US07737491B2
公开(公告)日：2010-06-15
申请号：US10581664
申请日：2004-12-03
申请人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
发明人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7813
摘要： The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.
摘要翻译：本发明涉及通过增加深区域（26）和中间区域（28）中的少数载流子的浓度来降低半导体器件的导通电压的技术。根据本发明的半导体器件包括电极，连接到电极的第二导电类型的顶部区域（36），第二导电类型的深区域和连接到电极的第一导电类型的中间区域。中间区域的一部分隔离顶部区域和深部区域。半导体器件还包括经由绝缘层面对中间区域的部分的栅电极（32）。面对栅电极的部分隔离顶部区域和深部区域。根据本发明的半导体器件还包括形成在中间区域和/或顶部区域内的阻挡区域（40）。

4. 发明申请

US20070040213A1 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US20070040213A1
公开(公告)日：2007-02-22
申请号：US10579228
申请日：2004-11-05
申请人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
发明人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/4238 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.
摘要翻译：本发明提供一种用于在身体区域中累积少数载流子的技术，即介于顶部区域和深部区域之间的中间区域，从而增加中间区域中的少数载流子的浓度。半导体器件具有第二导电类型的顶部区域（34），第二导电类型的深度区域（26）和用于隔离顶部区域和深度区域的第一导电类型的中间区域（28）。半导体器件还具有通过绝缘层（33）与中间区域的一部分相对的沟槽栅极（32）。面向沟槽栅的部分隔离了顶部区域和深部区域。沟槽门沿纵向方向延伸。沟槽栅的宽度沿纵向不均匀; 相反，沟槽栅的宽度沿着纵向方向变化。

5. 发明授权

US07423316B2 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US07423316B2
公开(公告)日：2008-09-09
申请号：US11596063
申请日：2005-05-12
申请人： Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui , Jun Saito , Koji Hotta
发明人： Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui , Jun Saito , Koji Hotta
IPC分类号： H01L29/94
CPC分类号： H01L29/1095 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).
摘要翻译：可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离）。此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。第二电极（62）不与发射极区域（32）相对。

6. 发明申请

US20080012040A1 Semiconductor Devices 有权
标题翻译：半导体器件
公开(公告)号：US20080012040A1
公开(公告)日：2008-01-17
申请号：US11596063
申请日：2005-05-12
申请人： Jun Saito , Koji Hotta , Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui
发明人： Jun Saito , Koji Hotta , Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui
IPC分类号： H01L29/739
CPC分类号： H01L29/1095 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).
摘要翻译：可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离）。此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。第二电极（62）不与发射极区域（32）相对。

7. 发明授权

US07549403B2 Engine generator 失效
标题翻译：发动机发电机
公开(公告)号：US07549403B2
公开(公告)日：2009-06-23
申请号：US11326865
申请日：2006-01-06
申请人： Masanobu Yamamoto , Takahide Sugiyama
发明人： Masanobu Yamamoto , Takahide Sugiyama
IPC分类号： F01P1/02 , H02K7/18
CPC分类号： F02B63/04 , F01P1/02 , F01P2005/025 , F02B63/048 , H02K7/1815 , H02K9/06
摘要： An engine generator can have an engine duct for releasing to the outside a cooling air which is used to cool an engine and a muffler, and a generator duct for releasing to the outside a cooling air which is used to cool a generator. The engine duct and the generator duct can be formed in one body as an exhaust duct. The muffler and the generator can be laterally aligned in parallel with each other, and the engine duct and the generator duct can be located in a manner such that the directions of release of the cooling winds from the engine duct and the generator duct are parallel to each other. The exhaust duct can be located with the generator duct secured to a crankcase. An opening of the engine duct, and an opening of the generator duct can be laterally aligned with each other, and the opening of the generator duct can be positioned above the generator.
摘要翻译：发动机发电机可以具有用于向外部释放用于冷却发动机和消声器的冷却空气的发动机管道和用于向外部释放用于冷却发电机的冷却空气的发电机管道。发动机管道和发电机管道可以在一个主体中形成为排气管道。消声器和发电机可以彼此平行地侧向对准，并且发动机管道和发电机管道可以以这样的方式定位，使得来自发动机管道和发电机管道的冷却风的释放方向平行于彼此。排气管可以位于发电机管道固定在曲轴箱上。发动机管道的开口和发电机管道的开口可以彼此横向对准，并且发电机管道的开口可以位于发电机上方。

8. 发明授权

US07064454B2 Power generator system 有权
公开(公告)号：US07064454B2
公开(公告)日：2006-06-20
申请号：US10417452
申请日：2003-04-16
申请人： Mitsuo Fukaya , Takashi Uchino , Takahide Sugiyama
发明人： Mitsuo Fukaya , Takashi Uchino , Takahide Sugiyama
IPC分类号： F02B63/00
CPC分类号： H02P9/04 , F02B63/04 , F02D13/04 , F02D29/06
摘要： A power generator system incorporates a generator driven by an engine. A case houses the generator and the engine. A controller communicates with the engine so as to control the speed at which the engine drives the generator. A temperature sensor is disposed so as to sense a temperature within the case and to send a temperature signal to the controller. The controller controls the speed of the engine depending upon at least the temperature signal received from the temperature sensor.

9. 发明授权

US06975042B2 Engine-driven generator 有权
标题翻译：发动机驱动发电机
公开(公告)号：US06975042B2
公开(公告)日：2005-12-13
申请号：US10630593
申请日：2003-07-30
申请人： Yoshinori Yamada , Takahide Sugiyama , Takashi Fujita , Hitoshi Kashima , Naoto Mazuka , Hisamichi Naito
发明人： Yoshinori Yamada , Takahide Sugiyama , Takashi Fujita , Hitoshi Kashima , Naoto Mazuka , Hisamichi Naito
IPC分类号： F02B63/04 , F02B75/16 , H02K7/18 , H02K9/06
CPC分类号： H02K7/1815 , F02B63/04 , F02B63/047 , F02B75/16
摘要： A power generator unit incorporates an engine and a generator driven by the engine. The generator incorporates a sound insulation cover that allows for efficient cooling of the various internal components. An engine crankcase cover mounts the generator close to the engine to promote a compact construction while allowing sufficient cooling of the engine, the generator, and a muffler. A fan draws in cooling air through one or more cooling air vents to cool a battery, an electronic control unit, the engine, the generator, and the muffler. The insulation cover provides quiet operation and efficient cooling of the power generator unit.
摘要翻译：发电机单元包括发动机和由发动机驱动的发电机。发电机包含隔音盖，可以有效地冷却各种内部组件。发动机曲轴箱盖将发电机靠近发动机安装，以促进紧凑的结构，同时允许发动机，发电机和消音器的充分冷却。风扇通过一个或多个冷却通风口吸入冷却空气，以冷却电池，电子控制单元，发动机，发电机和消音器。绝缘盖提供发电机组的安静运行和高效冷却。

10. 发明授权

US5079412A Point of sale data processing apparatus for handy type bar code reader which can be flush mounted 失效
标题翻译：销售数据处理装置点击可以被冲洗的手持式条形码读取器
公开(公告)号：US5079412A
公开(公告)日：1992-01-07
申请号：US339475
申请日：1989-04-17
申请人： Takahide Sugiyama
发明人： Takahide Sugiyama
IPC分类号： G07G1/00
CPC分类号： G07G1/0018
摘要： A point of sale-data processing apparatus has a handy type optical scanner for reading a bar code attached or marked on a product. The apparatus performs a predetermined process of sales with regard to the product in accordance with product information previously recorded and corresponding to the read bar code. A scanner holding recess for detachably holding the optical scanner is provided at the outer surface of a main body housing of the apparatus, on which various enter keys and a display panel are provided. The scanner held in the recess orients a bar code read window thereof toward the outside of the recess.

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