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1. 发明授权

US07423316B2 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US07423316B2
公开(公告)日：2008-09-09
申请号：US11596063
申请日：2005-05-12
申请人： Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui , Jun Saito , Koji Hotta
发明人： Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui , Jun Saito , Koji Hotta
IPC分类号： H01L29/94
CPC分类号： H01L29/1095 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).
摘要翻译：可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离）。此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。第二电极（62）不与发射极区域（32）相对。

2. 发明申请

US20080012040A1 Semiconductor Devices 有权
标题翻译：半导体器件
公开(公告)号：US20080012040A1
公开(公告)日：2008-01-17
申请号：US11596063
申请日：2005-05-12
申请人： Jun Saito , Koji Hotta , Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui
发明人： Jun Saito , Koji Hotta , Sachiko Kawaji , Masayasu Ishiko , Takahide Sugiyama , Masanori Usui
IPC分类号： H01L29/739
CPC分类号： H01L29/1095 , H01L29/0696 , H01L29/407 , H01L29/7397
摘要： The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).
摘要翻译：可以在形成在IGBT的体区内的浮置状态的半导体区域的宽范围内获得空穴载流子的密集堆积。在p型体区域（28）内形成有浮置电位的n型半导体区域（52）。 n型半导体区域（52）通过身体区域（28）与n + +型发射极区域（32）和n + SUP类型漂移区域（26）隔离）。此外，形成第二电极（62），以经由绝缘膜（64）与半导体区域（52）的至少一部分相对。第二电极（62）不与发射极区域（32）相对。

3. 发明授权

US07598566B2 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US07598566B2
公开(公告)日：2009-10-06
申请号：US10579228
申请日：2004-11-05
申请人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
发明人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/4238 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.
摘要翻译：本发明提供一种用于在身体区域中累积少数载流子的技术，即介于顶部区域和深部区域之间的中间区域，从而增加中间区域中的少数载流子的浓度。半导体器件具有第二导电类型的顶部区域（34），第二导电类型的深度区域（26）和用于隔离顶部区域和深度区域的第一导电类型的中间区域（28）。半导体器件还具有通过绝缘层（33）与中间区域的一部分相对的沟槽栅极（32）。面向沟槽栅的部分隔离了顶部区域和深部区域。沟槽门沿纵向方向延伸。沟槽栅的宽度沿纵向不均匀; 相反，沟槽栅的宽度沿着纵向方向变化。

4. 发明申请

US20070114598A1 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US20070114598A1
公开(公告)日：2007-05-24
申请号：US10581664
申请日：2004-12-03
申请人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
发明人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7813
摘要： The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.
摘要翻译：本发明涉及通过增加深区域（26）和中间区域（28）中的少数载流子的浓度来降低半导体器件的导通电压的技术。根据本发明的半导体器件包括电极，连接到电极的第二导电类型的顶部区域（36），第二导电类型的深区域和连接到电极的第一导电类型的中间区域。中间区域的一部分隔离顶部区域和深部区域。半导体器件还包括经由绝缘层面对中间区域的部分的栅电极（32）。面对栅电极的部分隔离顶部区域和深部区域。根据本发明的半导体器件还包括形成在中间区域和/或顶部区域内的阻挡区域（40）。

5. 发明授权

US07737491B2 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US07737491B2
公开(公告)日：2010-06-15
申请号：US10581664
申请日：2004-12-03
申请人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
发明人： Koji Hotta , Sachiko Kawaji , Takahide Sugiyama , Masanori Usui
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0634 , H01L29/1095 , H01L29/7813
摘要： The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.
摘要翻译：本发明涉及通过增加深区域（26）和中间区域（28）中的少数载流子的浓度来降低半导体器件的导通电压的技术。根据本发明的半导体器件包括电极，连接到电极的第二导电类型的顶部区域（36），第二导电类型的深区域和连接到电极的第一导电类型的中间区域。中间区域的一部分隔离顶部区域和深部区域。半导体器件还包括经由绝缘层面对中间区域的部分的栅电极（32）。面对栅电极的部分隔离顶部区域和深部区域。根据本发明的半导体器件还包括形成在中间区域和/或顶部区域内的阻挡区域（40）。

6. 发明申请

US20070040213A1 Trench gate field effect devices 有权
标题翻译：沟槽门场效应器件
公开(公告)号：US20070040213A1
公开(公告)日：2007-02-22
申请号：US10579228
申请日：2004-11-05
申请人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
发明人： Koji Hotta , Sachiko Kawaji , Masanori Usui , Takahide Sugiyama
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/4236 , H01L29/4238 , H01L29/7397 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.
摘要翻译：本发明提供一种用于在身体区域中累积少数载流子的技术，即介于顶部区域和深部区域之间的中间区域，从而增加中间区域中的少数载流子的浓度。半导体器件具有第二导电类型的顶部区域（34），第二导电类型的深度区域（26）和用于隔离顶部区域和深度区域的第一导电类型的中间区域（28）。半导体器件还具有通过绝缘层（33）与中间区域的一部分相对的沟槽栅极（32）。面向沟槽栅的部分隔离了顶部区域和深部区域。沟槽门沿纵向方向延伸。沟槽栅的宽度沿纵向不均匀; 相反，沟槽栅的宽度沿着纵向方向变化。

7. 发明授权

US09254871B2 Vehicular instrument-mounting structure 有权
标题翻译：车载仪表安装结构
公开(公告)号：US09254871B2
公开(公告)日：2016-02-09
申请号：US13995387
申请日：2012-02-13
申请人： Koji Hotta , Kenshi Yamanaka , Yutaka Hotta
发明人： Koji Hotta , Kenshi Yamanaka , Yutaka Hotta
IPC分类号： B60K1/00 , B62D27/00 , B62D21/15 , B60R16/04
CPC分类号： B62D21/155 , B60K1/00 , B60R16/04 , B60Y2200/92 , B60Y2306/01
摘要： The present invention comprises side members (15), which are vehicular skeleton members of a hybrid vehicle (10); a front cross member (18) for connecting the two side members (15); spring supports (16) connected to the side members (15); an auxiliary battery arranged further towards the vehicle front relative to a PCU (13) and attached to the front cross member (18) via a support platform (23) and a securing piece (22); a radiator (17) attached to the front cross member (18); a motor case (12) and an engine (11) connected to the vehicular skeleton member via an engine mount; an axle (25) extending from the motor case (12); and a PCU (13) connected to the motor case (12) via a guide plate (19) and a linkage bolt. Thus, there is provided a vehicular instrument-mounting structure capable of inhibiting collision of a power control device or other vehicle-mounted instrument with another member, and inhibiting damage caused to the power control device or other vehicle-mounted instrument during a vehicle collision.
摘要翻译：本发明包括作为混合动力车辆（10）的车辆骨架构件的侧构件（15）。用于连接两个侧构件（15）的前横梁（18）; 连接到侧构件（15）的弹簧支撑件（16）; 辅助电池相对于PCU（13）进一步朝向车辆前方布置，并且经由支撑平台（23）和固定件（22）附接到前横梁（18）; 附接到前横梁（18）的散热器（17）; 电动机壳体（12）和经由发动机支架与车辆骨架构件连接的发动机（11）; 从马达壳体（12）延伸的轴（25）; 以及经由引导板（19）和连杆螺栓连接到电动机壳体（12）的PCU（13）。因此，提供了一种能够抑制动力控制装置或其他车载装置与另一构件的碰撞，并且在车辆碰撞期间抑制对动力控制装置或其他车载装置造成的损坏的车辆仪表安装结构。

8. 发明申请

US20140339693A1 SEMICONDUCTOR MODULE 审中-公开
标题翻译：半导体模块
公开(公告)号：US20140339693A1
公开(公告)日：2014-11-20
申请号：US14366730
申请日：2011-12-20
申请人： Koji Hotta
发明人： Koji Hotta
IPC分类号： H01L23/473 , H01L23/50 , H01L27/06 , H01L25/16 , H01L23/367
CPC分类号： H01L23/473 , H01L23/3107 , H01L23/3675 , H01L23/4093 , H01L23/50 , H01L24/32 , H01L24/33 , H01L25/117 , H01L25/16 , H01L27/0629 , H01L2224/32245 , H01L2224/33181 , H01L2924/13055 , H01L2924/19041 , H01L2924/19105 , H01L2924/00
摘要： Provided is an improved cooler-integrated semiconductor module.A semiconductor module (100) includes a plurality of cooling plates (12), and a plurality of flat-plate semiconductor packages (5) and flat-plate device packages (2). The semiconductor packages (5) each include a semiconductor element housed therein. The device packages (2) each include an electronic component housed therein, the electronic component being different in type from the semiconductor element housed in the semiconductor elements. The cooling plates (12) are laminated alternately with the semiconductor packages (5) or the device packages (2). Connecting tubes (13a, 13b) having refrigerant flowing therein are provided between the cooling plates (12) adjacent to each other.
摘要翻译：提供了一种改进的冷却器集成半导体模块。半导体模块（100）包括多个冷却板（12）和多个平板半导体封装（5）和平板装置封装（2）。半导体封装（5）各自包括容纳在其中的半导体元件。器件封装（2）各自包括容纳在其中的电子部件，电子部件的类型与容纳在半导体元件中的半导体元件不同。冷却板（12）与半导体封装（5）或器件封装（2）交替层叠。具有流过其中的制冷剂的连接管（13a，13b）设置在彼此相邻的冷却板（12）之间。

9. 发明授权

US5090365A Variable valve timing system in an engine having a rotating cam-shaft 失效
标题翻译：具有旋转凸轮轴的发动机中的可变气门正时系统
公开(公告)号：US5090365A
公开(公告)日：1992-02-25
申请号：US669938
申请日：1991-03-15
申请人： Koji Hotta , Junichi Kano , Kongoh Aoki
发明人： Koji Hotta , Junichi Kano , Kongoh Aoki
IPC分类号： F01L1/34 , F01L1/344
CPC分类号： F01L1/34406 , F01L2810/04
摘要： A variable valve timing system comprises a first timing member driven by the engine, a second timing member rotatably fixed to the crankshaft, a helical device engaged between the first and second timing members and including a piston movable for adjusting an angular position between the first and second timing members, a hydraulic circuit device for selectively applying a hydraulic pressure to the piston for selectively moving the piston to adjust the angular position, a damper device on the first and second timing members for hydraulically damping rotational vibrations between the first timing member and the second timing member, and a notch formed at least on one of the first timing member and the second timing member in the damper device. Torque variations applied to the second timing member relative so the first timing member do not cause a change in the angular position.
摘要翻译：可变气门正时系统包括由发动机驱动的第一定时构件，可旋转地固定到曲轴的第二定时构件，接合在第一和第二定时构件之间的螺旋装置，并且包括可活动的活塞，用于调节第一和第第二定时构件，用于选择性地向活塞施加液压以选择性地移动活塞以调节角位置的液压回路装置;第一和第二定时构件上的阻尼装置，用于液压地阻尼第一定时构件和第二定时构件之间的旋转振动; 第二定时构件和形成在所述阻尼装置中的所述第一定时构件和所述第二定时构件中的至少一个上的切口。施加到第二定时构件相对的扭矩变化使得第一定时构件不会引起角位置的变化。

10. 发明授权

US09469201B2 Vehicle equipment mounting structure 有权
标题翻译：车辆设备安装结构
公开(公告)号：US09469201B2
公开(公告)日：2016-10-18
申请号：US13982618
申请日：2012-02-02
申请人： Koji Hotta , Kenshi Yamanaka , Yutaka Hotta
发明人： Koji Hotta , Kenshi Yamanaka , Yutaka Hotta
IPC分类号： B60L1/00 , B60L11/18 , B60K1/04 , B60R16/04
CPC分类号： B60L11/18 , B60K1/04 , B60K2001/0411 , B60R16/04
摘要： A vehicle equipment mounting structure that arranges a motor case, in which a rotary electric machine that drives a vehicle is housed, in an engine compartment, and that includes a PCU that controls the rotary electric machine, and an auxiliary battery that supplies electric power to the PCU. This structure includes a fixing portion that fixes the PCU onto the motor case, and a connecting portion that connects the auxiliary battery to a side member that absorbs an impact load by being crushed in a crushing direction. The connecting portion has a displaceable member that is displaceable in the crushing direction. The auxiliary battery is arranged on a vehicle front side of the PCU such that the PCU and the auxiliary battery partially overlap in the crushing direction. The auxiliary battery is arranged so as to be able to move past the PCU in response to an impact load.
摘要翻译：一种车辆装置安装结构，其布置有容纳有驱动车辆的旋转电机的电动机壳体，并且包括控制所述旋转电机的PCU，以及向所述电动机壳体供给电力的辅助电池 PCU。该结构包括将PCU固定在电动机壳体上的固定部分和将辅助电池连接到通过在破碎方向上被粉碎而吸收冲击载荷的侧部件的连接部分。连接部具有能够在破碎方向上移动的位移构件。辅助电池布置在PCU的车辆前侧，使得PCU和辅助电池在破碎方向上部分重叠。辅助电池被布置成能够响应于冲击负载而移动经过PCU。

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