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1. 发明授权

US6090699A Method of making a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6090699A
公开(公告)日：2000-07-18
申请号：US736324
申请日：1996-10-23
申请人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
发明人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
IPC分类号： H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76814 , H01L21/76822 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/7684 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76856 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L21/76885 , H01L21/76897 , H01L23/53233 , H01L23/53238 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2924/0002 , Y10S257/915
摘要： A method of making a semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
摘要翻译：制造半导体器件的方法包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的用于防止金属扩散的绝缘阻挡层构成布线层，形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。布线层的底部由导电阻挡层和绝缘阻挡层保护。因此，可以可靠地防止构成布线层的金属的扩散。

2. 发明授权

US06794286B2 Process for fabricating a metal wiring and metal contact in a semicondutor device 失效
标题翻译：在半导体器件中制造金属布线和金属接触的工艺
公开(公告)号：US06794286B2
公开(公告)日：2004-09-21
申请号：US09558053
申请日：2000-04-26
申请人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
发明人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
IPC分类号： H01L214763
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76813 , H01L21/76814 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/7684 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76856 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L21/76885 , H01L21/76897 , H01L23/53233 , H01L23/53238 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2924/0002 , Y10S257/915 , H01L2924/00
摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
摘要翻译：半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。布线层的底部由导电阻挡层和绝缘阻挡层保护。因此，可以可靠地防止构成布线层的金属的扩散。

3. 发明授权

US5592024A Semiconductor device having a wiring layer with a barrier layer 失效
标题翻译：具有具有阻挡层的布线层的半导体器件
公开(公告)号：US5592024A
公开(公告)日：1997-01-07
申请号：US330998
申请日：1994-10-28
申请人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
发明人： Hisako Aoyama , Kyoichi Suguro , Hiromi Niiyama , Hitoshi Tamura , Hisataka Hayashi , Tomonori Aoyama , Gaku Minamihaba , Tadashi Iijima
IPC分类号： H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/532 , H01L23/535 , H01L29/41 , H01L29/43
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/7681 , H01L21/76814 , H01L21/76822 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/7684 , H01L21/76843 , H01L21/76847 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76856 , H01L21/76858 , H01L21/76867 , H01L21/76877 , H01L21/76885 , H01L21/76897 , H01L23/53233 , H01L23/53238 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2924/0002 , Y10S257/915
摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
摘要翻译：半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。布线层的底部由导电阻挡层和绝缘阻挡层保护。因此，可以可靠地防止构成布线层的金属的扩散。

4. 发明申请

US20110294291A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110294291A1
公开(公告)日：2011-12-01
申请号：US13035546
申请日：2011-02-25
申请人： Yukiteru Matsui , Gaku Minamihaba , Hajime Eda , Masayoshi Iwayama , Minoru Amano , Masatoshi Yoshikawa , Motoyuki Sato , Kyoichi Suguro , Masako Kodera
发明人： Yukiteru Matsui , Gaku Minamihaba , Hajime Eda , Masayoshi Iwayama , Minoru Amano , Masatoshi Yoshikawa , Motoyuki Sato , Kyoichi Suguro , Masako Kodera
IPC分类号： H01L21/768
CPC分类号： H01L21/02697 , H01L21/3212 , H01L21/7684 , H01L21/76877 , H01L21/76883 , H01L27/228
摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.
摘要翻译：根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。接触插头的下表面连接到开关元件。接触塞的上表面的最大粗糙度为0.2nm以下。

5. 发明授权

US08778802B2 Polishing method and method for fabricating semiconductor device 有权
标题翻译：抛光方法及制造半导体器件的方法
公开(公告)号：US08778802B2
公开(公告)日：2014-07-15
申请号：US11802532
申请日：2007-05-23
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , B24B37/04 , B24B57/02 , H01L21/02074 , H01L21/31053
摘要： A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.
摘要翻译：抛光方法包括：使设置在转台上的抛光垫与转台一起旋转，并且通过使用旋转的抛光垫来抛光衬底的表面，同时在前侧向抛光垫的表面提供化学流体的相对于抛光垫的表面的倾斜方向。

6. 发明申请

US20130095661A1 CMP METHOD, CMP APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： CMP方法，CMP装置和制造半导体器件的方法
公开(公告)号：US20130095661A1
公开(公告)日：2013-04-18
申请号：US13428163
申请日：2012-03-23
申请人： Akifumi GAWASE , Yukiteru Matsui , Gaku Minamihaba , Hajime Eda
发明人： Akifumi GAWASE , Yukiteru Matsui , Gaku Minamihaba , Hajime Eda
IPC分类号： H01L21/302 , B24B53/017 , B24B37/015 , B24B37/013 , B24B37/07
CPC分类号： H01L21/76224 , C09G1/02 , H01L21/31053
摘要： According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.
摘要翻译：根据一个实施例，CMP方法包括通过使用包括氧化硅研磨剂的浆料和包括氮化硅膜的抛光阻挡膜来开始研磨氧化硅膜，并且在抛光停止剂暴露时停止抛光。浆料包括重均分子量为50000以上且5000000以下的第一水溶性聚合物和重均分子量为1000以上且10000以下的第二水溶性聚合物。

7. 发明申请

US20130040456A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20130040456A1
公开(公告)日：2013-02-14
申请号：US13427950
申请日：2012-03-23
申请人： Hajime EDA , Yukiteru Matsui , Gaku Minamihaba , Akifumi Gawase
发明人： Hajime EDA , Yukiteru Matsui , Gaku Minamihaba , Akifumi Gawase
IPC分类号： H01L21/768
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/3212 , H01L21/67219
摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry.
摘要翻译：根据一个实施例，提供一种制造半导体器件的方法。在该方法中，在半导体衬底上的绝缘膜中形成沟槽。在绝缘膜上形成下层膜。在下层膜上形成金属膜。通过提供含有金属离子的第一CMP浆料来进行其中去除金属膜的第一次抛光。通过供给有机酸和纯水来清洗抛光垫和半导体基板的表面。通过供给不同于第一CMP浆料的第二CMP浆料，进行从凹槽以外的部分除去下层膜的第二研磨。

8. 发明申请

US20110192420A1 CLEANING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁装置和制造半导体器件的方法
公开(公告)号：US20110192420A1
公开(公告)日：2011-08-11
申请号：US13020088
申请日：2011-02-03
申请人： Nobuyuki KURASHIMA , Gaku Minamihaba
发明人： Nobuyuki KURASHIMA , Gaku Minamihaba
IPC分类号： B08B1/00 , B08B3/00
CPC分类号： B08B1/04 , H01L21/67046
摘要： In one embodiment, a cleaning apparatus, including, supporting bodies supporting and rotating a substrate, each of a first and a second cleaning member, having a circular shape and rotating around a rotational symmetry axis, periphery portions of the cleaning members being able to contact to opposed surfaces of the substrate, each of a first brush-cleaning member and a second brush-cleaning member having a groove with a V-shape cross section being widened upwards, a brush with a cleaning function being formed on a slope plane of the groove, the cleaning members being able to shift to contact to the slope planes, respectively, first cleaning solution supply portions supplying a first cleaning solution dispersed resin particles to the surfaces, and second cleaning solution supply portions supplying a second cleaning solution to peripheries of the cleaning members and which are arranged to contact to the slope planes, respectively.
摘要翻译：在一个实施例中，一种清洁装置，包括支撑和旋转基板的支撑体，第一和第二清洁构件中的每一个，具有圆形并围绕旋转对称轴旋转，清洁构件的周边部分能够接触在基板的相对表面上，具有第一刷清洁构件和具有V形横截面的槽的第二刷清洁构件中的每一个向上加宽，具有清洁功能的刷子形成在所述清洁部件分别能够转移到与所述倾斜平面接触的第一清洗溶液供应部分，将第一清洁溶液分散在所述表面上的分散树脂颗粒;以及第二清洁溶液供应部分，清洁构件，并分别与斜面接触。

9. 发明授权

US07951717B2 Post-CMP treating liquid and manufacturing method of semiconductor device using the same 失效
标题翻译：后CMP处理液和使用其的半导体器件的制造方法
公开(公告)号：US07951717B2
公开(公告)日：2011-05-31
申请号：US11967584
申请日：2007-12-31
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/302 , H01L21/461 , C09K3/14 , C09G1/02
CPC分类号： H01L21/02074
摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，和四甲基氢氧化铵。另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

10. 发明申请

US20110062374A1 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US20110062374A1
公开(公告)日：2011-03-17
申请号：US12926358
申请日：2010-11-12
申请人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L22/26
摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
摘要翻译：提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

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