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1. 发明授权

US06469334B2 Ferroelectric field effect transistor 失效
标题翻译：铁电场效应晶体管
公开(公告)号：US06469334B2
公开(公告)日：2002-10-22
申请号：US09821596
申请日：2001-03-29
申请人： Koji Arita , Shinichiro Hayashi , Tatsuo Otsuki , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Tatsuo Otsuki , Carlos A. Paz de Araujo
IPC分类号： H01L2994
CPC分类号： H01L28/56 , H01L21/28291 , H01L29/516 , H01L29/78391
摘要： A ferroelectric FET having an interface insulator layer containing ZrO2. The ferroelectric FET includes a gate oxide layer, the interface insulator layer is located on the gate oxide layer, and ferroelectric layered superlattice material is located on the interface insulator layer, The interface insulator layer has a thickness of from 15 to 25 nanometers.
摘要翻译：具有含有ZrO 2的界面绝缘体层的铁电FET。铁电FET包括栅极氧化物层，界面绝缘体层位于栅极氧化物层上，并且铁电层状超晶格材料位于界面绝缘体层上。界面绝缘体层的厚度为15至25纳米。

2. 发明授权

US06255121B1 Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor 失效
标题翻译：具有由液体前体形成的界面绝缘体的铁电场效应晶体管的制造方法
公开(公告)号：US06255121B1
公开(公告)日：2001-07-03
申请号：US09258489
申请日：1999-02-26
申请人： Koji Arita , Shinichiro Hayashi , Tatsuo Otsuki , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Tatsuo Otsuki , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L28/56 , H01L21/28291 , H01L29/516 , H01L29/78391
摘要： A method for forming an interface insulator layer in a ferroelectric FET memory, in which a liquid precursor is applied to a semiconductor substrate. Preferably, the liquid precursor is an enhanced metalorganic decomposition (“EMOD”) precursor, applied using a liquid-source misted deposition technique. Preferably, the EMOD precursor solution applied to the substrate contains metal ethylhexanoates containing metal moieties in relative molar proportions for forming an interface insulator layer containing ZrO2, CeO2, Y2O3 or (Ce1-xZrx)O2, wherein 0≦x≦1.
摘要翻译：一种用于在铁电FET存储器中形成界面绝缘体层的方法，其中将液体前体施加到半导体衬底。优选地，液体前体是使用液体源雾化沉积技术施加的增强的金属有机分解（“EMOD”）前体。优选地，施加到基底上的EMOD前体溶液含有相对摩尔比例含有金属部分的金属乙基己酸，以形成含有ZrO 2，CeO 2，Y 2 O 3或（Ce 1-x Zr x）O 2的界面绝缘体层，其中0≤x≤1。

3. 发明授权

US06358758B2 Low imprint ferroelectric material for long retention memory and method of making the same 有权
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US06358758B2
公开(公告)日：2002-03-19
申请号：US09860386
申请日：2001-05-19
申请人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , H01L27/10852
摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
摘要翻译：用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

4. 发明授权

US06281534B1 Low imprint ferroelectric material for long retention memory and method of making the same 有权
标题翻译：用于长保留记忆的低压刻铁电材料和制造相同的方法
公开(公告)号：US06281534B1
公开(公告)日：2001-08-28
申请号：US09170417
申请日：1998-10-13
申请人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Koji Arita , Shinichiro Hayashi , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L27/10852
摘要： A liquid precursor for forming a thin film of ferroelectric metal oxide in an integrated circuit contains metal oxides in excess of the stoichiometrically balanced amount. When the precursor comprises strontium, bismuth, tantalum and niobium for forming strontium bismuth tantalum niobate, the precursor contains excess amounts of at least one of tantalum and niobium. Capacitors containing thin films of layered superlattice material made from a precursor containing excess tantalum and niobium show good polarizability and low percentage imprint after 1010 negative polarization switching pulses at 75° C., and after 109 negative polarization switching pulses at 125° C.
摘要翻译：用于在集成电路中形成铁电体金属氧化物薄膜的液体前体包含超过化学计量平衡量的金属氧化物。当前体包含用于形成铌酸铋钽酸铋的锶，铋，钽和铌时，前体含有过量的钽和铌中的至少一种。含有由含有过量的钽和铌的前体制成的层状超晶格材料的薄膜的电容器在75℃下在1010个负极化开关脉冲之后和在125℃的109个负极化开关脉冲之后显示出良好的极化率和低百分比印记。

5. 发明授权

US06198225B1 Ferroelectric flat panel displays 失效
标题翻译：铁电平板显示屏
公开(公告)号：US06198225B1
公开(公告)日：2001-03-06
申请号：US09326838
申请日：1999-06-07
申请人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： G09G310
CPC分类号： G09G3/367 , G09G3/22 , H01J1/30 , H01J2201/306 , H01J2329/00
摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.
摘要翻译：平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。薄膜厚度优选在50-140nm的范围内，从而提高薄膜的极化性和透明度。显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。铁电薄膜中的功能梯度增强了电子发射。可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。荧光体可以夹在电介质和铁电体之间以增强发射。

6. 发明授权

US6017579A Method of forming magnesium oxide films on glass substrate for use in plasma display panels 失效
标题翻译：在用于等离子体显示面板的玻璃基板上形成氧化镁膜的方法
公开(公告)号：US6017579A
公开(公告)日：2000-01-25
申请号：US838006
申请日：1997-04-14
申请人： Gota Kano , Carlos A. Paz De Araujo , Koji Arita , Michael C. Scott , Larry D. McMillan , Shinichiro Hayashi
发明人： Gota Kano , Carlos A. Paz De Araujo , Koji Arita , Michael C. Scott , Larry D. McMillan , Shinichiro Hayashi
IPC分类号： C03C17/27 , C03C17/25 , H01J9/20 , H01J11/02 , H01J29/89 , B05D5/12
CPC分类号： H01J9/20 , C03C17/25 , C03C2217/228 , C03C2218/11 , H01J2209/012 , H01J2211/40
摘要： A new method (P200) is provided for making magnesium oxide layers (122) in plasma displays (100). A magnesium carboxylate liquid precursor solution is applied to a display panel (102), dried, and annealed to yield a solid magnesium oxide layer (122) having excellent electro-optical performance.
摘要翻译：提供了一种用于在等离子体显示器（100）中制造氧化镁层（122）的新方法（P200）。将镁羧酸盐液体前体溶液施加到显示面板（102）上，干燥并退火，得到具有优异电光性能的固体氧化镁层（122）。

7. 发明授权

US06639262B2 Metal oxide integrated circuit on silicon germanium substrate 失效
标题翻译：硅锗基板上的金属氧化物集成电路
公开(公告)号：US06639262B2
公开(公告)日：2003-10-28
申请号：US09906285
申请日：2001-07-16
申请人： Carlos A. Paz de Araujo , Masamichi Azuma , Larry D. McMillan , Koji Arita
发明人： Carlos A. Paz de Araujo , Masamichi Azuma , Larry D. McMillan , Koji Arita
IPC分类号： H01L31119
CPC分类号： H01L21/02197 , C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/1275 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01C7/1013 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02282 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75
摘要： Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400° C. and then furnace annealed in oxygen at a temperature of between 600° C. and 850° C.
摘要翻译：集成电路电容器，其中电容器电介质是在硅锗衬底上方形成的具有小于200纳米的晶粒尺寸的BST薄膜。典型的晶粒尺寸为40nm以下。 BST通过旋涂工艺沉积液体前体而形成。原始液体前体包括溶解在2-甲氧基乙醇中的烷氧基羧酸酯，并且在旋转之前进行二甲苯交换。前体在空气中在约400℃的温度下干燥，然后在600℃至850℃的温度下在氧气中进行炉退火。

8. 发明授权

US06537830B1 Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material 失效
标题翻译：制造具有多晶结晶取向铁电材料的铁电FET的方法
公开(公告)号：US06537830B1
公开(公告)日：2003-03-25
申请号：US09533204
申请日：2000-03-23
申请人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
发明人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
IPC分类号： H01L2100
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A nondestructive read-out, nonvolatile ferroelectric field effect transistor (“FET”) memory in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material. Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.
摘要翻译：集成电路中的非破坏性读出非易失性铁电场效应晶体管（“FET”）存储器，其包含多晶结晶取向铁电材料的薄膜。优选地，材料是多晶c轴取向层状超晶格材料。更优选的是c轴取向的钽酸铋铋或铌酸铋钽铌酸盐。

9. 发明授权

US06236076B1 Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material 失效
标题翻译：具有功能梯度材料的非易失性存储器应用的铁电场效应晶体管
公开(公告)号：US06236076B1
公开(公告)日：2001-05-22
申请号：US09301867
申请日：1999-04-29
申请人： Koji Arita , Carlos A. Paz de Araujo
发明人： Koji Arita , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L29/516 , H01L21/28291 , H01L28/56 , H01L29/78391
摘要： A nonvolatile nondestructible read-out ferroelectric FET memory comprising a semiconductor substrate, a ferroelectric functional gradient material (“FGM”) thin film, and a gate electrode. In one basic embodiment, the ferroelectric FGM thin film contains a ferroelectric compound and a dielectric compound. The dielectric compound has a lower dielectric constant than the ferroelectric compound. There is a concentration gradient of the ferroelectric compound in the thin film. In a second basic embodiment, the FGM thin film is a functional gradient ferroelectric (“FGF”), in which compositional gradients of ferroelectric compounds result in unconventional hysteresis behavior. The unconventional hysteresis behavior of FGF thin films is elated to an enlarged memory window in ferroelectric FET memories. FGM thin films are preferably formed using a liquid source MOD methods, preferably a multisource CVD method.
摘要翻译：包括半导体衬底，铁电功能梯度材料（“FGM”）薄膜和栅电极的非易失性非破坏性读出型铁电FET存储器。在一个基本实施例中，铁电FGM薄膜含有铁电化合物和电介质化合物。电介质化合物的介电常数比铁电化合物低。在薄膜中存在铁电化合物的浓度梯度。在第二基本实施例中，FGM薄膜是功能梯度铁电（“FGF”），其中铁电化合物的组成梯度导致非常规的滞后行为。 FGF薄膜的非常规滞后行为被激发到铁电FET存储器中的扩大的存储窗口。 FGM薄膜优选使用液体源MOD方法，优选多源CVD方法形成。

10. 发明授权

US06582972B1 Low temperature oxidizing method of making a layered superlattice material 有权
标题翻译：制作层状超晶格材料的低温氧化法
公开(公告)号：US06582972B1
公开(公告)日：2003-06-24
申请号：US09544697
申请日：2000-04-07
申请人： Vikram Joshi , Jolanta Celinska , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo , Koji Arita
发明人： Vikram Joshi , Jolanta Celinska , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo , Koji Arita
IPC分类号： H01G2100
CPC分类号： H01L27/11502 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691
摘要： A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.
摘要翻译：将用于形成层状超晶格材料的前体薄膜施加到集成电路基板上，然后在100℃至300℃的低温下向前体薄膜施加强氧化剂，由此形成金属氧化物薄膜。强氧化剂可以是液体或气体。液体强氧化剂的实例是过氧化氢。气态强氧化剂的实例是臭氧。金属氧化物薄膜通过在500℃至700℃，优选不超过650℃的范围内的升高温度退火30分钟至2小时的时间段而结晶。退火在含氧气氛中进行，优选包括水蒸气。紫外线（UV）辐射处理可能退火之前。可以在退火之前从500℃到700℃的范围内的RTP。

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