专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6017579A Method of forming magnesium oxide films on glass substrate for use in plasma display panels 失效
标题翻译：在用于等离子体显示面板的玻璃基板上形成氧化镁膜的方法
公开(公告)号：US6017579A
公开(公告)日：2000-01-25
申请号：US838006
申请日：1997-04-14
申请人： Gota Kano , Carlos A. Paz De Araujo , Koji Arita , Michael C. Scott , Larry D. McMillan , Shinichiro Hayashi
发明人： Gota Kano , Carlos A. Paz De Araujo , Koji Arita , Michael C. Scott , Larry D. McMillan , Shinichiro Hayashi
IPC分类号： C03C17/27 , C03C17/25 , H01J9/20 , H01J11/02 , H01J29/89 , B05D5/12
CPC分类号： H01J9/20 , C03C17/25 , C03C2217/228 , C03C2218/11 , H01J2209/012 , H01J2211/40
摘要： A new method (P200) is provided for making magnesium oxide layers (122) in plasma displays (100). A magnesium carboxylate liquid precursor solution is applied to a display panel (102), dried, and annealed to yield a solid magnesium oxide layer (122) having excellent electro-optical performance.
摘要翻译：提供了一种用于在等离子体显示器（100）中制造氧化镁层（122）的新方法（P200）。将镁羧酸盐液体前体溶液施加到显示面板（102）上，干燥并退火，得到具有优异电光性能的固体氧化镁层（122）。

2. 发明授权

US06198225B1 Ferroelectric flat panel displays 失效
标题翻译：铁电平板显示屏
公开(公告)号：US06198225B1
公开(公告)日：2001-03-06
申请号：US09326838
申请日：1999-06-07
申请人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Gota Kano , Yasuhiro Shimada , Shinichiro Hayashi , Koji Arita , Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： G09G310
CPC分类号： G09G3/367 , G09G3/22 , H01J1/30 , H01J2201/306 , H01J2329/00
摘要： A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one embodiment, a voltage pulse causes the layered superlattice material to emit electrons that impinge upon a phosphor, causing the phosphor to emit light. In another embodiment, an electric potential creates a remanent polarization in the layered superlattice material, which exerts an electric field in liquid crystal layer, thereby influencing the transmissivity of light through the liquid crystal. The layered superlattice material is a metal oxide formed using an inventive liquid precursor containing an alkoxycarboxylate. The thin film thickness is preferably in the range 50-140 nm, so that polarizabilty and transparency of the thin film is enhanced. A display element may comprise a varistor device to prevent cross-talk between pixels and to enable sudden polarization switching. A functional gradient in the ferroelectric thin film enhances electron emission. Two ferroelectric elements, one on either side of the phosphor may be used to enhance luminescence. A phosphor can be sandwiched between a dielectric and a ferroelectric to enhance emission.
摘要翻译：平板显示装置中的铁电层状超晶格材料薄膜被通电以选择性地影响显示图像。在一个实施例中，电压脉冲使得层状超晶格材料发射撞击磷光体的电子，导致磷光体发光。在另一个实施例中，电位在层状超晶格材料中产生剩余极化，其在液晶层中施加电场，从而影响透过液晶的透射率。层状超晶格材料是使用本发明的含有烷氧基羧酸盐的液体前体形成的金属氧化物。薄膜厚度优选在50-140nm的范围内，从而提高薄膜的极化性和透明度。显示元件可以包括用于防止像素之间的串扰并允许突发极化切换的变阻器装置。铁电薄膜中的功能梯度增强了电子发射。可以使用两个铁电元件，一个在荧光体的两侧，以增强发光。荧光体可以夹在电介质和铁电体之间以增强发射。

3. 发明授权

US5843516A Liquid source formation of thin films using hexamethyl-disilazane 失效
标题翻译：使用六甲基二硅氮烷的液体源形成薄膜
公开(公告)号：US5843516A
公开(公告)日：1998-12-01
申请号：US714774
申请日：1996-09-16
申请人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
发明人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
IPC分类号： C23C18/12 , H01L21/314 , H01L21/316 , B05D5/12
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.
摘要翻译：制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和铋2-乙基己酸酯的前体液体，将基材置于真空沉积室内，少量六甲基二硅氮烷加入到前体液体中，雾气流入沉积室，同时将室保持在环境温度，以将一层前体液体沉积在基底上。将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。然后，完成集成电路以将集成电路的部件中的至少一部分分层超晶格材料膜包括在内。

4. 发明授权

US5849071A Liquid source formation of thin films using hexamethyl-disilazane 失效
标题翻译：使用六甲基二硅氮烷的液体源形成薄膜
公开(公告)号：US5849071A
公开(公告)日：1998-12-15
申请号：US876304
申请日：1997-06-16
申请人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
发明人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
IPC分类号： C23C18/12 , H01L21/314 , H01L21/316 , C09D7/12 , C09K15/32
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a solvent such as xylenes/methyl ethyl ketone and a small amount of hexamethyl-disilazane. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
摘要翻译：在溶剂如二甲苯/甲基乙基酮和少量六甲基二硅氮烷中，包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体。将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。

5. 发明授权

US5846597A Liquid source formation of thin films using hexamethyl-disilazane 失效
公开(公告)号：US5846597A
公开(公告)日：1998-12-08
申请号：US876305
申请日：1997-06-16
申请人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
发明人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
IPC分类号： C23C18/12 , H01L21/314 , H01L21/316 , B05D5/12
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

6. 发明授权

US5759923A Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits 失效
标题翻译：用于在集成电路中制造二氧化硅和硅玻璃层的方法和装置
公开(公告)号：US5759923A
公开(公告)日：1998-06-02
申请号：US615806
申请日：1996-03-14
申请人： Larry D. McMillan , Michael C. Scott , Carlos A. Paz de Araujo , Tatsuo Otsuki , Shinichiro Hayashi
发明人： Larry D. McMillan , Michael C. Scott , Carlos A. Paz de Araujo , Tatsuo Otsuki , Shinichiro Hayashi
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00
CPC分类号： H01L21/316 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1212 , C23C18/1287 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/316 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.
摘要翻译：制备在二甲苯溶剂中包含硅的前体液体，将基底放置在真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时将室保持在环境温度以沉积一层前体液体在基底上。将液体干燥，烘烤和退火以在基底上形成二氧化硅或硅玻璃的薄膜。然后，完成集成电路以将至少一部分二氧化硅或硅玻璃层作为集成电路中的电子器件的绝缘体。

7. 发明授权

US06413883B1 Method of liquid deposition by selection of liquid viscosity and other precursor properties 有权
标题翻译：通过选择液体粘度和其他前体性质进行液体沉积的方法
公开(公告)号：US06413883B1
公开(公告)日：2002-07-02
申请号：US09243254
申请日：1999-02-03
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2131
CPC分类号： C23C18/1216 , C23C18/1291 , C23C18/14 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L21/31691
摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.
摘要翻译：将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。通常，物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

8. 发明授权

US5972428A Methods and apparatus for material deposition using primer 失效
标题翻译：使用底漆进行材料沉积的方法和装置
公开(公告)号：US5972428A
公开(公告)日：1999-10-26
申请号：US611414
申请日：1996-03-05
申请人： Shinichiro Hayashi , Larry D. McMillan , Masamichi Azuma , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Masamichi Azuma , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , H01L21/316 , C23C16/00 , B05D1/02
CPC分类号： H01L21/31691
摘要： A liquid primer is misted, flowed into a deposition chamber and deposited on a substrate. A liquid precursor is then misted, flowed into a deposition chamber and deposited on the substrate. The primer and precursor are dried to form a solid thin film, which is then annealed to form a part of an electronic component in an integrated circuit, such as the dielectric in a memory cell. The primer is a solvent, and the precursor includes a metal carboxylate, a metal alkoxide, or a metal alkoxycarboxylate in a precursor solvent. Preferably, the primer and the precursor solvent are the same solvent, such as 2-methoxyethanol, xylenes, or n-butyl acetate.
摘要翻译：液体底漆被雾化，流入沉积室并沉积在基底上。然后液体前体被雾化，流入沉积室并沉积在基底上。将底漆和前体干燥以形成固体薄膜，然后将其退火以形成集成电路中的电子部件的一部分，例如存储单元中的电介质。引物是溶剂，前体在前体溶剂中包括金属羧酸盐，金属醇盐或烷氧基羧酸金属盐。优选地，底漆和前体溶剂是相同的溶剂，例如2-甲氧基乙醇，二甲苯或乙酸正丁酯。

9. 发明授权

US06383555B1 Misted precursor deposition apparatus and method with improved mist and mist flow 有权
标题翻译：雾化前体沉积装置和方法具有改善的雾气流
公开(公告)号：US06383555B1
公开(公告)日：2002-05-07
申请号：US09615373
申请日：2000-07-13
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D512
CPC分类号： H01L21/31691 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C8/10 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/1291 , C23C18/14 , C23C26/02 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L41/314 , H05K3/105 , Y10S427/101
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
摘要翻译：衬底位于沉积室内，衬底限定衬底平面。液体前体被超声波或文氏管装置迷雾，产生胶体雾。产生雾，允许沉淀在缓冲室中，通过高达0.01微米的系统过滤，并流入基板和阻挡板之间的沉积室，以在基板上沉积液体层。将液体干燥以在基板上形成固体材料的薄膜，然后将其并入集成电路的电气部件中。

10. 发明授权

US5965219A Misted deposition method with applied UV radiation 失效
标题翻译：应用紫外线辐射沉积法
公开(公告)号：US5965219A
公开(公告)日：1999-10-12
申请号：US591341
申请日：1996-01-25
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , C23C8/00
CPC分类号： C23C18/1216 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/14 , C23C26/02 , C23C8/10 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： UV radiation is applied to a substrate in a deposition chamber to desorb water and other contaminates from it. A liquid precursor is misted, flowed into the deposition chamber and deposited on a substrate while UV radiation is applied to the mist. The film of liquid on the substrate is dried and annealed on the substrate while the UV radiation is applied to form a solid thin film of a metal oxide. The thin film is then incorporated into an electronic device of an integrated circuit fabricated on the substrate. The application of UV radiation to both the mist during deposition and the thin film after deposition significantly increases the quality of the resulting integrated circuits. The process has been found to be particularly excellent for making BST, strontium bismuth tantalate, and strontium bismuth niobate.
摘要翻译：将UV辐射施加到沉积室中的基底以从其中解吸水和其它污染物。液体前体被雾化，流入沉积室并沉积在基底上，同时将紫外线辐射施加于雾。将衬底上的液体膜干燥并在衬底上退火，同时施加UV辐射以形成金属氧化物的固体薄膜。然后将薄膜并入到在衬底上制造的集成电路的电子器件中。在沉积期间将UV辐射施加到雾和沉积后的薄膜显着增加了所得到的集成电路的质量。已经发现该方法对于制备BST，钽酸锶锶和铌酸铋锶特别优异。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式