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1. 发明授权

US08835800B2 Laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置及半导体装置的制造方法
公开(公告)号：US08835800B2
公开(公告)日：2014-09-16
申请号：US11389508
申请日：2006-03-27
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： B23K26/00 , H01L21/44 , H01L27/12 , B23K26/08 , B23K26/04 , G02B26/10 , B23K26/073 , G02B27/09
CPC分类号： H01L27/1266 , B23K26/04 , B23K26/0738 , B23K26/083 , B23K26/0869 , G02B26/10 , G02B27/0911 , H01L27/1214 , H01L27/1285
摘要： The present invention provides a laser irradiation apparatus which can accurately control positions of beam spots of laser beams emitted from laser oscillators and the distance between the adjacent beam spots. A laser irradiation apparatus of the present invention includes a first movable stage with an irradiation body provided, two or more laser oscillators emitting laser beams, a plurality of second movable stages with the laser oscillators and optical systems provided, and a means for detecting at least one alignment maker. The first stage and the second stages may move not only in one direction but also in a plurality of directions. Further, the optical systems are to shape the laser beams emitted from the laser oscillators into linear beams on the irradiation surface.
摘要翻译：本发明提供一种可以精确地控制从激光振荡器发射的激光束的光束位置和相邻光束点之间的距离的激光照射装置。本发明的激光照射装置包括具有照射体的第一可动台，发射激光的两个以上的激光振荡器，设有激光振荡器和光学系统的多个第二可动台，以及至少用于检测的装置一个对齐制造商。第一阶段和第二阶段可以不仅在一个方向上而且在多个方向上移动。此外，光学系统将从激光振荡器发射的激光束成形为在照射表面上的线性光束。

2. 发明授权

US08525070B2 Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US08525070B2
公开(公告)日：2013-09-03
申请号：US11639416
申请日：2006-12-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： B23K26/08 , H01L21/324
CPC分类号： H01L27/1266 , B23K26/06 , B23K26/0624 , B23K26/064 , B23K26/0643 , B23K26/0652 , B23K26/0665 , B23K26/0823 , B23K26/0838 , B23K26/0869 , B23K26/0892 , B23K26/1438 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/4908
摘要： A laser irradiation apparatus is provided with a laser oscillator, an articulated beam propagator in which a plurality of pipes are connected to each other in an articulated portion, and a course change means of a laser beam in the articulated portion. At least one pipe of the plurality of pipes includes a transfer lens for suppressing stagger of a laser beam in a traveling direction, in each pipe. The articulated portion produces degree of freedom in disposition of a laser oscillator, and the transfer lens enables suppression of change in beam profile.
摘要翻译：激光照射装置设置有激光振荡器，铰接光束传播器，其中多个管道在铰接部分中彼此连接，并且铰接部分中的激光束的行程改变装置。多个管道中的至少一个管道包括用于在每个管道中抑制在行进方向上交错的激光束的转移透镜。关节部分在激光振荡器的配置中产生自由度，并且转印透镜能够抑制光束轮廓的变化。

3. 发明授权

US07777210B2 Laser irradiation method in which a distance between an irradiation object and an optical system is controlled by an autofocusing mechanism and method for manufacturing semiconductor device using the same 有权
标题翻译：通过自动聚焦机构控制照射对象与光学系统之间的距离的激光照射方法及使用其的半导体装置的制造方法
公开(公告)号：US07777210B2
公开(公告)日：2010-08-17
申请号：US12480984
申请日：2009-06-09
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01N21/86
CPC分类号： H01L21/02686 , B23K26/04 , B23K26/0738 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.
摘要翻译：本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

4. 发明授权

US07736964B2 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07736964B2
公开(公告)日：2010-06-15
申请号：US11274904
申请日：2005-11-16
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

5. 发明授权

US07486706B2 Laser irradiation apparatus, laser irradiation method and method for manufacturing semiconductor device 有权
公开(公告)号：US07486706B2
公开(公告)日：2009-02-03
申请号：US10997868
申请日：2004-11-29
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01S3/10
摘要： The object of the present invention is to provide a laser irradiation apparatus being able to enlarge the beam spot to a large degree compared with that of the CW laser, to suppress the thermal damage to the glass substrate, and to form an aggregation of crystal grains including a single crystal extending long in a scanning direction by growing the crystal continuously in the scanning direction. The laser irradiation of the present invention comprises a pulsed laser oscillator, a non-linear optical element for converting the wavelength of the laser light emitted from the pulsed laser oscillator, and an optical system for condensing the laser light whose wavelength is converted on a semiconductor film, wherein the pulsed laser oscillator has a repetition rate in the range of 10 MHz to 100 GHz.

6. 发明申请

US20070178672A1 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US20070178672A1
公开(公告)日：2007-08-02
申请号：US10584729
申请日：2005-10-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02683 , B23K26/0736 , B23K26/0738 , B23K26/0853 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1255 , H01L27/1266 , H01L27/1285 , H01L27/1296 , H01L29/78621 , H01L29/78648 , Y10T117/1076
摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要翻译：在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

7. 发明申请

US20070139660A1 Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置及激光照射方法及半导体装置的制造方法
公开(公告)号：US20070139660A1
公开(公告)日：2007-06-21
申请号：US11640394
申请日：2006-12-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01B11/14
CPC分类号： B23K26/0853 , B23K26/04 , B23K26/0738 , G03F9/7088 , H01L21/02675 , H01L21/2026
摘要： The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.
摘要翻译：本发明提供一种激光照射装置和激光照射方法，该激光照射装置和激光照射方法能够通过校正由于温度变化导致的来自预定位置的激光束的照射位置的偏移而精确地进行激光束的照射。激光照射装置包括发射激光束的激光振荡器; 设置有照射物体的XY台阶; 光学系统，其将激光束成形为设置在XY台上的照射物体的表面上的线性光束; 对照射物体的表面发光的照明; 以及用于对照射物体的表面上的光的反射光进行成像的相机，其中从由照相机成像的反射光检测到的线性光束的照射位置的未对准被校正。

8. 发明申请

US20050237895A1 Laser irradiation apparatus and method for manufacturing semiconductor device 审中-公开
标题翻译：激光照射装置及半导体装置的制造方法
公开(公告)号：US20050237895A1
公开(公告)日：2005-10-27
申请号：US11101481
申请日：2005-04-08
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： B23K26/073 , B23K26/08 , G11B7/08 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/77 , H01L27/32 , H01L51/52
CPC分类号： H01L21/02683 , B23K26/0738 , B23K26/082 , B23K26/0821 , B23K26/0853 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/3244 , H01L27/3295 , H01L51/5253
摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to irradiate the irradiation object with the laser beam having homogeneous energy density without complicating the optical system. The laser irradiation apparatus of the present invention comprises a laser oscillator, an optical system for scanning repeatedly a beam spot of the laser beam emitted from the laser oscillator in a uniaxial direction over the surface of the irradiation object, and a position controlling means for moving the position of the irradiation object relative to the laser beam in a direction perpendicular to the uniaxial direction.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够用具有均匀能量密度的激光束照射照射物体，而不会使光学系统复杂化。本发明的激光照射装置包括激光振荡器，用于在照射物体的表面上沿单轴方向重复扫描从激光振荡器发射的激光束的光点的光学系统，以及用于移动的位置控制装置照射对象相对于激光束在垂直于单轴方向的方向上的位置。

9. 发明授权

US08304313B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08304313B2
公开(公告)日：2012-11-06
申请号：US10585128
申请日：2005-08-12
申请人： Koichiro Tanaka , Atsuo Isobe , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Atsuo Isobe , Yoshiaki Yamamoto
IPC分类号： H01L21/8236
CPC分类号： H01L29/78648 , B23K26/0604 , B23K26/066 , H01L21/268 , H01L27/1296 , H01L29/78621 , H01L2029/7863
摘要： It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.
摘要翻译：本发明的目的是提供一种激光照射装置和方法，该激光照射装置和方法可以降低整个照射区域中的微晶区域的比例，并且可以用激光束均匀地照射半导体膜。从激光振荡器发射的激光束的低强度部分被狭缝阻挡，激光束被反射镜偏转，并且通过使用两个凸柱面透镜将光束成形为期望的尺寸。然后，激光束被传送到照射表面。

10. 发明授权

US08022380B2 Laser irradiation method in which a distance between an irradiation object and an optical system is controlled by an autofocusing mechanism and method for manufacturing semiconductor device using the same 有权
标题翻译：通过自动聚焦机构控制照射对象与光学系统之间的距离的激光照射方法及使用其的半导体装置的制造方法
公开(公告)号：US08022380B2
公开(公告)日：2011-09-20
申请号：US12850292
申请日：2010-08-04
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01N21/86
CPC分类号： H01L21/02686 , B23K26/04 , B23K26/0738 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.
摘要翻译：本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

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