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1. 发明授权

US5772833A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US5772833A
公开(公告)日：1998-06-30
申请号：US341524
申请日：1994-11-17
申请人： Koichiro Inazawa , Yoshio Ishikawa , Takashi Asakawa , Masato Hiratsuka , Nobuyuki Okayama
发明人： Koichiro Inazawa , Yoshio Ishikawa , Takashi Asakawa , Masato Hiratsuka , Nobuyuki Okayama
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L21/02
CPC分类号： H01J37/32082 , H01J37/32532 , H01J2237/3346
摘要： The present invention relates to a plasma etching method and a plasma etching apparatus, and more particularly to a plasma etching method and a plasma etching apparatus in which the selection ration is enhanced by improving trench side-wall protecting effect.
摘要翻译：等离子体蚀刻方法和等离子体蚀刻装置技术领域本发明涉及一种等离子体蚀刻方法和等离子体蚀刻装置，更具体地涉及通过改善沟槽侧壁保护效果来提高选择比例的等离子体蚀刻方法和等离子体蚀刻装置。

2. 发明授权

US5717294A Plasma process apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5717294A
公开(公告)日：1998-02-10
申请号：US395503
申请日：1995-02-27
申请人： Itsuko Sakai , Makoto Sekine , Keiji Horioka , Yukimasa Yoshida , Koichiro Inazawa , Masahiro Ogasawara , Yoshio Ishikawa , Kazuo Eguchi
发明人： Itsuko Sakai , Makoto Sekine , Keiji Horioka , Yukimasa Yoshida , Koichiro Inazawa , Masahiro Ogasawara , Yoshio Ishikawa , Kazuo Eguchi
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K10/00 , H05H1/16
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.
摘要翻译：真空室包含用于支撑晶片的第一电极和与第一电极相对的第二电极。供应系统和耗尽系统连接到真空室。该系统将反应性气体供应到室中，并且系统从室中排出废气。射频电源连接到第一电极，用于在电极之间提供电力以产生电场E.环形磁体组件设置在室周围，用于产生磁场B，磁场B具有与中心平面相交的中心平面电场E.磁体组件具有在磁场的中心平面中具有不同磁化轴的多个磁体元件。电子由于电场E的外部产物（ExB）和磁场B产生的力而漂移。磁场B的中心平面从晶片的目标表面向上移动，使得磁力线的磁场与基板的目标表面相交。

3. 发明授权

US5462778A Artificial turf, pile yarn for artificial turf and process and spinneret for producing pile yarn 失效
标题翻译：人造草坪，人造草坪毛绒纱和生产绒毛纱的工艺和喷丝头
公开(公告)号：US5462778A
公开(公告)日：1995-10-31
申请号：US67492
申请日：1993-05-13
申请人： Yoshio Ishikawa
发明人： Yoshio Ishikawa
IPC分类号： D01D5/253 , D03D27/00 , E01C13/08 , A01N3/00 , B28B5/00 , B32B3/02
CPC分类号： D02G3/445 , D01D5/253 , D03D27/00 , E01C13/08 , D10B2505/202 , Y10T428/23957 , Y10T428/249922 , Y10T428/2925 , Y10T428/2973
摘要： An artificial turf with high water rentivity. A cut pile is formed over the surface of a backing structure by implanting a multiplicity of tufts. Each tuft comprises one or a plurality of pile yarns. Each of the pile yarns is composed of one flat filament or a plurality of bundled flat filaments twisted and fixed in the twisted state into a slender form having an approximately spiral cross section. A pile yarn for such artificial turfs and a process for producing such a pile yarn.
摘要翻译：高水租的人造草皮。通过植入多个簇，在背衬结构的表面上形成切割桩。每个簇包括一个或多个绒头纱线。每个绒头纱线由一个扁平丝或多个以扭曲状态扭曲和固定的扁平扁丝组成，具有大致螺旋形横截面的细长形式。用于这种人造草皮的绒头纱线和用于生产这种绒毛纱线的方法。

4. 发明授权

US5368684A Etching method for a silicon-containing layer using hydrogen bromide 失效
标题翻译：使用溴化氢的含硅层的蚀刻方法
公开(公告)号：US5368684A
公开(公告)日：1994-11-29
申请号：US993063
申请日：1992-12-18
申请人： Yoshio Ishikawa , Hiroshi Kojima , Masahito Hiratuka
发明人： Yoshio Ishikawa , Hiroshi Kojima , Masahito Hiratuka
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/3213 , H01L21/306
CPC分类号： H01L21/32137
摘要： A magnetron discharge is generated by a high-frequency electric field and a magnetic field perpendicular to the electric field to generate a plasma of an etching gas, and an object to be processed having a silicon-containing layer represented by a polysilicon layer is exposed in the plasma to etch the silicon-containing layer. In this case, the etching gas mainly contains an HBr gas, a gas mixture of HBr and Cl.sub.2 gases, a gas mixture of HBr and HCl gases, or a gas obtained by adding an oxygen-containing gas such as an O.sub.2 gas to each of these gases.
摘要翻译：通过高频电场和垂直于电场的磁场产生磁控管放电以产生蚀刻气体的等离子体，并且将具有由多晶硅层表示的含硅层的被处理物体暴露在该等离子体蚀刻含硅层。在这种情况下，蚀刻气体主要包含HBr气体，HBr和Cl2气体的气体混合物，HBr和HCl气体的气体混合物，或通过将诸如O 2气体的含氧气体加入到这些气体。

5. 发明授权

US5164034A Apparatus and method for processing substrate 失效
标题翻译：装置和处理基板的方法
公开(公告)号：US5164034A
公开(公告)日：1992-11-17
申请号：US762087
申请日：1991-09-19
申请人： Izumi Arai , Yoshifumi Tahara , Yoshio Ishikawa
发明人： Izumi Arai , Yoshifumi Tahara , Yoshio Ishikawa
IPC分类号： H01L21/00 , H01L21/308 , H01L21/311
CPC分类号： H01L21/67207 , H01L21/3081 , H01L21/31138 , H01L21/67069
摘要： A substrate processing apparatus comprising a housing section for housing substrates to be processed, a first chamber for performing anisotropic etching treatment, conveyor means for conveying the substrates from the housing section to the first chamber, and a second chamber for performing at least one of isotropic etching treatment and ashing treatment with respect to a substrate which has been subjected to the anisotropic etching treatment in the first chamber. And a method of processing substrates, comprising the steps of performing anisotropic etching treatment in a first chamber with respect to the substrates, and performing at least one of isotropic etching treatment and ashing treatment in a second chamber with respect to the substrates which have been subjected to the anisotropic etching treatment in the first chamber and have been kept unexposed to the atmosphere, the isotropic etching treatment and the ashing treatment being performed simultaneously or in succession.

6. 发明授权

US5271788A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5271788A
公开(公告)日：1993-12-21
申请号：US917361
申请日：1992-07-23
申请人： Makoto Hasegawa , Takaya Matsushita , Keiji Horioka , Isahiro Hasegawa , Toshihisa Nozawa , Yoshio Ishikawa , Masahito Hiratsuka , Satoshi Kaneko
发明人： Makoto Hasegawa , Takaya Matsushita , Keiji Horioka , Isahiro Hasegawa , Toshihisa Nozawa , Yoshio Ishikawa , Masahito Hiratsuka , Satoshi Kaneko
IPC分类号： H01J37/32 , C23F1/02
CPC分类号： H01J37/32082 , H01J37/3255 , H01J37/32623 , H01J37/32642 , H01J37/3266
摘要： A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.

7. 发明授权

US5240556A Surface-heating apparatus and surface-treating method 失效
标题翻译：表面处理装置和表面处理方法
公开(公告)号：US5240556A
公开(公告)日：1993-08-31
申请号：US893018
申请日：1992-06-03
申请人： Yoshio Ishikawa , Junichi Arami , Towl Ikeda , Teruo Iwata
发明人： Yoshio Ishikawa , Junichi Arami , Towl Ikeda , Teruo Iwata
IPC分类号： C23C16/54 , H01L21/00
CPC分类号： H01L21/67207 , C23C16/54 , H01L21/67069 , H01L21/67115
摘要： According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.
摘要翻译：根据本发明，能够高精度地蚀刻被处理物的表面处理装置，抑制在空气中沉积在被蚀刻物上的有害气体的排出，防止物体的表面沉积/附着反应产品和液滴被公开。表面处理装置包括用于蚀刻被激活的蚀刻气体处理的被加载物体的第一处理室，用于将第一处理室设置在低压的排出构件，用于冷却在第一处理中加载的物体的冷却装置第二处理室，其中装载有由第一处理室蚀刻的物体，用于将第二处理室设置在低压的排气构件，以及用于对装载在第二处理室中的物体进行退火的加热构件。

8. 发明授权

US07253115B2 Dual damascene etch processes 失效
标题翻译：双镶嵌蚀刻工艺
公开(公告)号：US07253115B2
公开(公告)日：2007-08-07
申请号：US10360236
申请日：2003-02-06
申请人： Hiroya Tanaka , Chee Khiang Ivan Sim , Alok Jain , Yoshio Ishikawa
发明人： Hiroya Tanaka , Chee Khiang Ivan Sim , Alok Jain , Yoshio Ishikawa
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A dual damascene trench etching process includes a two-step BARC etching process, a first BARC etch step using a fluorocarbon-based plasma, and a second BARC etch step using an O2/N2-based plasma. The first BARC etch step removes a first portion of the BARC covering a dielectric stack using a fluorocarbon-based plasma. The second BARC etch step removes a second portion of the BARC covering the dielectric stack using a O2/N2 based plasma. The dual damascene trench etching process may further include a BARC etch back process to remove a further portion of the BARC not covering the dielectric stack. The dual damascene trench etching process further includes a low-k dielectric etching process that etches trenches in a low-k dielectric layer in the dielectric stack and that avoids the use of argon in order to prevent facet formation.
摘要翻译：双镶嵌沟槽蚀刻工艺包括两步BARC蚀刻工艺，使用基于碳氟化合物的等离子体的第一BARC蚀刻步骤和使用O 2 N 2 N 2的第二BARC蚀刻步骤基于等离子体。第一个BARC蚀刻步骤使用基于碳氟化合物的等离子体去除覆盖电介质叠层的BARC的第一部分。第二个BARC蚀刻步骤使用基于O 2 / N 2 N 2的等离子体去除覆盖电介质叠层的BARC的第二部分。双镶嵌沟槽蚀刻工艺可以进一步包括用于去除不覆盖电介质叠层的BARC的另外部分的BARC回蚀工艺。双镶嵌沟槽蚀刻工艺还包括低介电蚀刻工艺，其蚀刻电介质堆叠中的低k电介质层中的沟槽，并且避免使用氩以防止刻面形成。

9. 发明授权

US06800213B2 Precision dielectric etch using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的精密电介质蚀刻
公开(公告)号：US06800213B2
公开(公告)日：2004-10-05
申请号：US10165249
申请日：2002-06-07
申请人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
发明人： Ji Ding , Hidehiro Kojiri , Yoshio Ishikawa , Keiji Horioka , Ruiping Wang , Robert W. Wu , Hoiman (Raymond) Hung
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.
摘要翻译：具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方。选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例的前两个选择的比例F / C在1.5和2之间。

10. 发明授权

US06461533B1 Etchant for silicon oxide and method 失效
标题翻译：氧化硅蚀刻剂和方法
公开(公告)号：US06461533B1
公开(公告)日：2002-10-08
申请号：US09090476
申请日：1998-06-04
申请人： Yasuhiro Horiike , Yoshio Ishikawa , Keiji Horioka
发明人： Yasuhiro Horiike , Yoshio Ishikawa , Keiji Horioka
IPC分类号： C09K1300
CPC分类号： H01L21/31116 , C09K13/08
摘要： A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.
摘要翻译：一种对光致抗蚀剂掩模和含硅衬底具有高选择性的氧化硅蚀刻的方法，包括将氧化硅暴露于含有至少一个有机基团的碳氟化合物的前体蚀刻气体的等离子体和含有有机硅烷的等离子体。当蚀刻气体中存在至少约10重量％的硅烷时，氧化硅和光致抗蚀剂掩模层之间以及氧化硅和含硅衬底之间的选择性显着增加。高长宽比，亚微米尺寸的开口可被蚀刻。

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