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    • 10. 发明授权
    • Alignment method and a projection exposure apparatus using the same
    • 对准方法和使用其的投影曝光装置
    • US4952060A
    • 1990-08-28
    • US463886
    • 1990-01-10
    • Hideki InaFumio SakaiHitoshi Nakano
    • Hideki InaFumio SakaiHitoshi Nakano
    • H01L21/30G03F9/00H01L21/027H01L21/67H01L21/68
    • G03F9/7084
    • A projection exposure apparatus is disclosed for exposing a semiconductor wafer to a pattern, formed on a reticle, by projection using a projection lens system. The apparatus includes an alignment optical system disposed at a side of the wafer remote from the projection lens system. The alignment optical system is used to detect an alignment mark provided on the wafer, from the back of the wafer. In accordance with the detection, the wafer is moved so that its alignment mark is brought into a predetermined positional relation with the alignment optical system, whereby the reticle and the wafer are relatively aligned. With this arrangement, the wafer alignment mark can be detected without being adversely affected by a resist layer applied to the wafer surface. Thus, the reticle and the wafer can be aligned very accurately.
    • 公开了一种投影曝光装置,用于通过使用投影透镜系统的投影将半导体晶片暴露于形成在掩模版上的图案。 该装置包括配置在远离投影透镜系统的晶片侧的对准光学系统。 对准光学系统用于从晶片的背面检测设置在晶片上的对准标记。 根据检测,移动晶片使其对准标记与取向光学系统成预定的位置关系,由此标线片和晶片相对对准。 利用这种布置,可以检测晶片对准标记,而不受施加到晶片表面的抗蚀剂层的不利影响。 因此,可以非常准确地对准标线片和晶片。