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1. 发明授权

US4976785A Paint resin 失效
标题翻译：油漆树脂
公开(公告)号：US4976785A
公开(公告)日：1990-12-11
申请号：US309894
申请日：1989-02-14
申请人： Shinji Nakano , Koichi Tsutsui , Shoji Ikeda , Yoji Hirasawa
发明人： Shinji Nakano , Koichi Tsutsui , Shoji Ikeda , Yoji Hirasawa
IPC分类号： C09D7/45 , C09D17/00
CPC分类号： C09D7/02 , C09D17/00
摘要： Disclosed is a paint resin prepared by reacting an aluminum chelate compound with a resin having an active hydrogen bonded to an electrophilic atom or atomic group, and/or epoxy group.
摘要翻译：公开了通过铝螯合化合物与具有键合到亲电子原子或原子团的活性氢的树脂和/或环氧基团而制备的涂料树脂。

2. 发明授权

US4867573A Powder treating method and apparatus used therefor 失效
标题翻译：用于其的粉末处理方法和装置
公开(公告)号：US4867573A
公开(公告)日：1989-09-19
申请号：US63954
申请日：1987-06-19
申请人： Koichi Tsutsui , Shoji Ikeda , Koji Nishizawa , Makoto Yagi , Nobuaki Kubo
发明人： Koichi Tsutsui , Shoji Ikeda , Koji Nishizawa , Makoto Yagi , Nobuaki Kubo
IPC分类号： B01J19/08 , B01F11/00 , B01J2/00 , B01J2/10 , B01J8/18 , B01J19/12 , B01J19/18 , B01J19/28 , C09C3/04
CPC分类号： B01J19/12 , B01J19/126 , B01J19/129 , B01J19/18 , B01J19/285 , B01J2/10 , C09C3/048 , B01J2219/00094 , B01J2219/00141 , B01J2219/00155 , B01J2219/00162 , B01J2219/0894 , B01J2219/0896 , B01J2219/182 , B01J2219/185 , B01J2219/1946 , C01P2004/61 , C01P2006/22 , C01P2006/82
摘要： The powders such as pigments are treated with the low temperature plasma so that their chemical property is improved. In low temperature plasma treatment, if a plurality of powders coagulate into one lump, or if powders cohere on the vessel's inside wall surface, it is difficult to make uniform and efficient treatment. The present invention provides a powder treating method and apparatus used therefor which make uniform and efficient treatment of powders with low temperature plasma. The first invention is a powder treating method where the powders are treated with low temperature plasma while stirring them by vibration. The second invention is a powder treating apparatus equipped with a treating chamber for housing powders, a device for vibrating this treating chamber and a plasma producing device, in which the powders in the treating chamber are treated with low temperature plasma while stirring them by vibration. While the treating chamber is formed by upper and lower two vessels with their opening mated to one another. An insulator is provided at a junction between these two vessels so as to electrically insulate the upper and lower two vessels, so that these two vessels may be utilized as mutually facing exciting electrode and grounding electrode. The third invention is a powder treating method where the powders are treated with low temperature plasma while being stirred by a precessional movement of a spiral screw which is being rotated.
摘要翻译：用低温等离子体处理颜料等粉末，使其化学性质得到改善。在低温等离子体处理中，如果多个粉末凝聚成一个团块，或者如果粉末凝结在容器的内壁表面上，则难以进行均匀和有效的处理。本发明提供了一种粉末处理方法和装置，其用低温等离子体均匀有效地处理粉末。第一发明是一种粉末处理方法，其中粉末在用振动搅拌的同时用低温等离子体处理。第二发明是配备有用于容纳粉末的处理室的粉末处理装置，用于使该处理室振动的装置和等离子体生成装置，其中处理室中的粉末用低温等离子体处理，同时通过振动搅拌。处理室由上部和下部两个容器形成，它们的开口相互配合。在这两个容器之间的连接处设置有绝缘体，以便使上下两个容器电绝缘，使得这两个容器可以用作相互面对的激励电极和接地电极。第三发明是一种粉末处理方法，其中通过旋转的螺旋螺杆的进动运动来搅拌粉末，同时用低温等离子体处理。

3. 发明授权

US4772788A Corona discharge treating system 失效
标题翻译：电晕放电处理系统
公开(公告)号：US4772788A
公开(公告)日：1988-09-20
申请号：US872582
申请日：1986-06-10
申请人： Koichi Tsutsui , Shoji Ikeda
发明人： Koichi Tsutsui , Shoji Ikeda
IPC分类号： B23H1/00 , B29C59/10 , C08J7/00 , H01T19/00 , H01T19/04
CPC分类号： H01T19/00 , B29C59/103
摘要： A corona discharge treating system wherein in order that the corona discharge treatment can be performed efficiently and securely on any product of complicated shape having a large number of different faces to be treated, the system is equipped with conveying means for conveyance of the article, a plurality of discharge electrodes are disposed along the conveying direction of the article, each of these discharge electrodes performs activation of a part of the surface to be treated by sharing, the whole surface to be treated can be activated when said article has passed through all these discharge electrodes, thereby enabling the surface treatment to be continuously made, while conveying the article.Complicated shape articles may be subjected to continuous and secure corona discharge treating without stagnation.
摘要翻译：一种电晕放电处理系统，其特征在于，为了能够对具有大量不同面积的复杂形状的任何产品进行电晕放电处理，能够有效且可靠地进行电晕放电处理，该系统配备有用于输送物品的输送装置多个放电电极沿着物品的传送方向设置，这些放电电极中的每一个通过共享来执行待处理表面的一部分的激活，当所述物品通过所有这些时，可以激活整个被处理表面放电电极，从而能够在输送物品的同时进行表面处理。复杂的成形制品可以经受连续和安全的电晕放电处理而不停滞。

4. 发明授权

US4879100A Corona discharge treatment apparatus 失效
标题翻译：电晕放电处理装置
公开(公告)号：US4879100A
公开(公告)日：1989-11-07
申请号：US122158
申请日：1987-11-17
申请人： Koichi Tsutsui , Shoji Ikeda , Koji Ueki
发明人： Koichi Tsutsui , Shoji Ikeda , Koji Ueki
IPC分类号： C08J7/00 , B29C59/10 , H01T19/00
CPC分类号： B29C59/103 , H01T19/00 , Y10S422/907
摘要： To perform a corona discharge treatment, a high voltage needs to be impressed between a base electrode and a discharge electrode. One of the electrodes is linked to a high frequency and high voltage source, and the other electrode is grounded. When the electrode linked to the source is moved to be accommodated to a surface to be treated of an object, accidents of an electric shock or a short-circuit often result from an unexpected contact of the electrode on an operator or installation, or a troubles often result from spark or coming-part of contacts. In this invention, one of the electrodes is linked to the source and immovably arranged, while the other is grounded and is allowed to make the movement for accommodating the surface to be treated of the object and the discharge electrode to each other. According to the corona discharge treatment apparatus of this invention, such accidents as an electric shock or a short-circuit, etc., are foreclosed, and troubles are reduced.

5. 发明授权

US09799822B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09799822B2
公开(公告)日：2017-10-24
申请号：US14118093
申请日：2012-04-19
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
IPC分类号： H01L29/82 , H01L43/02 , H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08
摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

6. 发明申请

US20140340961A1 TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME 有权
标题翻译：隧道磁阻效应元件和随机存取存储器
公开(公告)号：US20140340961A1
公开(公告)日：2014-11-20
申请号：US14356739
申请日：2011-11-08
申请人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Yosuke Kurosaki , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Hiroyuki Yamamoto , Yosuke Kurosaki , Katsuya Miura
IPC分类号： G11C11/16 , H01L43/10 , H01L27/22
CPC分类号： G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/08 , H01L43/10
摘要： Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.
摘要翻译：提供了可以实现高TMR比和低写入电流的隧道磁阻效应元件，并且记录层和钉扎层的热稳定性因子（E / kBT）增加，同时元件的电阻增加整体上被抑制，能够进行稳定的动作。在每个包含CoFeB的记录层21和被钉扎层22中的至少一个上，导电氧化物层31和32设置在与隧道势垒层10相对的一侧。

7. 发明授权

US07759750B2 Magnetic memory cell and random access memory 有权
标题翻译：磁存储单元和随机存取存储器
公开(公告)号：US07759750B2
公开(公告)日：2010-07-20
申请号：US11790211
申请日：2007-04-24
申请人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
发明人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01F10/3254 , B82Y25/00 , G11C11/16 , H01F10/3268 , H01F10/329 , Y10T428/1121
摘要： To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.
摘要翻译：提供高可靠性，低功耗的非易失性存储器。铁磁自由层的磁化反转在自旋转移转矩下完成，其中在与隧道磁阻器件的铁磁性自由层的易磁化轴的方向正交的方向上施加适当的磁场，存储单元包括。优选地，在垂直于膜平面的方向上，沿形成45°角的方向施加磁场。

8. 发明申请

US20070254188A1 Magnetic memory cell and random access memory 有权
标题翻译：磁存储单元和随机存取存储器
公开(公告)号：US20070254188A1
公开(公告)日：2007-11-01
申请号：US11790211
申请日：2007-04-24
申请人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
发明人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G11C11/16 , H01F10/3268 , H01F10/329 , Y10T428/1121
摘要： To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.
摘要翻译：提供高可靠性，低功耗的非易失性存储器。铁磁自由层的磁化反转在自旋转移转矩下完成，其中在与隧道磁阻器件的铁磁性自由层的易磁化轴的方向正交的方向上施加适当的磁场，存储单元包括。优选地，在垂直于膜平面的方向上，沿形成45°角的方向施加磁场。

9. 发明授权

US06828046B2 Soft magnetic film of FeCoMO having a high saturation flux density, a moderate soft magnetism and a uniaxial magnetic anisotropy 失效
标题翻译：具有高饱和磁通密度，中等软磁性和单轴磁各向异性的FeCoMO软磁膜
公开(公告)号：US06828046B2
公开(公告)日：2004-12-07
申请号：US09960419
申请日：2001-09-21
申请人： Shoji Ikeda , Ikuya Tagawa , Yuji Uehara , Yoshinori Ohtsuka
发明人： Shoji Ikeda , Ikuya Tagawa , Yuji Uehara , Yoshinori Ohtsuka
IPC分类号： G11B533
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3109 , G11B5/3153 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , H01F10/132 , Y10T428/115 , Y10T428/1171 , Y10T428/12465 , Y10T428/12861 , Y10T428/12951
摘要： A soft magnetic film comprising Fe, Co, a metallic element (M), and oxygen (O) is provided. The soft magnetic film is represented by a composition formula of (Fe1-aCoa)xMyOz. The metallic element (M) is one selected from a group consisting of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Rh, Ru, Ni, Pd and Pt, or is an alloy composed of at least two selected from this group. The composition formula fulfills the following conditions: a=0.05-0.65; y=0.2-9 at %, z=1-12 at %, and y+z=
摘要翻译：提供了包含Fe，Co，金属元素（M）和氧（O）的软磁性膜。软磁性膜由（Fe1-aCoa）xMyOz的组成式表示。金属元素（M）是选自Al，B，Ga，Si，Ge，Y，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W，Rh，Ru，Ni， Pd和Pt，或由选自该组的至少两种组成的合金。组成式满足以下条件：a = 0.05-0.65; y = 0.2-9at％，z = 1-12at％，y + z = <15at％; x =（100-y-z）at％。以bcc相为主相，形成晶体结构。 bcc相的晶粒直径不超过50nm。 bcc相包括金属元素（M）和氧（O）的固溶体。

10. 发明授权

US4455310A Quinolinecarboxylic acid derivative, and antibacterial agent containing said compound as active ingredient 失效
标题翻译：喹啉羧酸衍生物和含有所述化合物作为活性成分的抗菌剂
公开(公告)号：US4455310A
公开(公告)日：1984-06-19
申请号：US382353
申请日：1982-05-26
申请人： Fumio Sakamoto , Shoji Ikeda , Goro Tsukamoto
发明人： Fumio Sakamoto , Shoji Ikeda , Goro Tsukamoto
IPC分类号： C07D405/12 , A61K31/495 , A61P31/04 , C07D317/40 , C07D403/14
CPC分类号： C07D317/40
摘要： A novel quinolinecarboxylic acid derivative of the formula ##STR1## or a pharmaceutically acceptable salt thereof. These compounds are useful as antibacterial agents, and are prepared by a process which comprises reacting a compound of the formula ##STR2## with a compound of the formula ##STR3##wherein X represents a halogen atom, and thereafter, as required, converting the resulting compound to a pharmaceutically acceptable salt thereof.
摘要翻译：式（I）的新型喹啉羧酸衍生物或其药学上可接受的盐。这些化合物可用作抗菌剂，并且通过包括使下式化合物（II）与下式化合物（III）反应的方法制备，其中X表示卤素原子，其后，根据需要将所得化合物转化为其药学上可接受的盐。

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