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1. 发明授权

US07763907B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07763907B2
公开(公告)日：2010-07-27
申请号：US11850404
申请日：2007-09-05
申请人： Koichi Tachibana , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
发明人： Koichi Tachibana , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
IPC分类号： H01L33/22 , H01L33/14 , H01L33/38
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
摘要翻译：半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

2. 发明申请

US20080179623A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
标题翻译：半导体发光元件
公开(公告)号：US20080179623A1
公开(公告)日：2008-07-31
申请号：US11850404
申请日：2007-09-05
申请人： Koichi TACHIBANA , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
发明人： Koichi TACHIBANA , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
IPC分类号： H01L29/24
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
摘要翻译：半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

3. 发明授权

US07863637B2 Semiconductor light emitting element, method for manufacturing the same, and light emitting device 有权
标题翻译：半导体发光元件及其制造方法以及发光元件
公开(公告)号：US07863637B2
公开(公告)日：2011-01-04
申请号：US12037358
申请日：2008-02-26
申请人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
摘要翻译：本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小，凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

4. 发明授权

US08004004B2 Semiconductor light emitting element, method for manufacturing the same, and light emitting device 有权
公开(公告)号：US08004004B2
公开(公告)日：2011-08-23
申请号：US12955620
申请日：2010-11-29
申请人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

5. 发明授权

US08525195B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08525195B2
公开(公告)日：2013-09-03
申请号：US12873662
申请日：2010-09-01
申请人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
发明人： Hajime Nago , Koichi Tachibana , Toshiki Hikosaka , Shigeya Kimura , Shinya Nunoue
IPC分类号： H01L33/02
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/04 , H01L33/32 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0
摘要翻译：根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。发光部分设置在半导体层之间。发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。阱层包含Inx1Ga1-x1N。本体设置在n型半导体层和发光部之间。主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。第二层包含Inx2Ga1-x2N。第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0

6. 发明申请

US20120286284A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 有权
标题翻译：半导体发光器件和散热器
公开(公告)号：US20120286284A1
公开(公告)日：2012-11-15
申请号：US13206700
申请日：2011-08-10
申请人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
发明人： Koichi TACHIBANA , Shigeya Kimura , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01S5/3407 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.
摘要翻译：根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。基础层包括氮化物半导体。基础层的位错密度不大于5×108cm-2。第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。发光部分设置在第一半导体层上。发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

7. 发明申请

US20120056220A1 SEMICONDUCTOR LIGHT EMMITING DEVICE 失效
标题翻译：半导体照明装置
公开(公告)号：US20120056220A1
公开(公告)日：2012-03-08
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke SATO , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

8. 发明申请

US20120012814A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120012814A1
公开(公告)日：2012-01-19
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki HARADA , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/08
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

9. 发明申请

US20080151957A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20080151957A1
公开(公告)日：2008-06-26
申请号：US12036409
申请日：2008-02-25
申请人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
发明人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
IPC分类号： H01S5/343
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
摘要翻译：半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出，第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

10. 发明申请

US20070096142A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070096142A1
公开(公告)日：2007-05-03
申请号：US11511337
申请日：2006-08-29
申请人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
发明人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
摘要翻译：半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出，第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

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