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1. 发明授权

US08746170B2 Substrate process apparatus, substrate process method, and computer readable storage medium 有权
标题翻译：基板处理装置，基板处理方法和计算机可读存储介质
公开(公告)号：US08746170B2
公开(公告)日：2014-06-10
申请号：US12916667
申请日：2010-11-01
申请人： Kohichi Orito , Manabu Honma , Tatsuya Tamura
发明人： Kohichi Orito , Manabu Honma , Tatsuya Tamura
IPC分类号： C23C16/52 , C23C16/458 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67253 , C23C16/45502 , C23C16/45551 , C23C16/45557 , C23C16/45587 , H01L21/68764 , H01L21/68771 , Y10T137/8376
摘要： A vacuum chamber is evacuated through a first evacuation passage provided with a first valve and a second evacuation passage provided with a second valve. An opening degree of the first valve is adjusted so that a pressure in the vacuum chamber becomes substantially equal to a process pressure P; an opening degree of a butterfly valve further provided in the second evacuation passage is adjusted to substantially equal to a set value determined by a table in order to set flow rates of gases to be evacuated through the first evacuation passage and the second evacuation passage to be substantially equal to corresponding set values determined by the recipe; and an opening degree of the second valve is adjusted so that a measurement value of a differential pressure gauge further provided in the second evacuation passage becomes substantially equal to a differential pressure written in the table.
摘要翻译：通过设置有第一阀的第一抽空通道和设置有第二阀的第二抽空通道抽真空室。调节第一阀的开度，使得真空室中的压力基本上等于处理压力P; 进一步设置在第二排气通道中的蝶阀的开度被调整为基本上等于由工作台确定的设定值，以便将通过第一抽空通道和第二抽空通道排出的气体的流量设定为基本上等于由配方确定的相应设定值; 并且调节第二阀的开度，使得进一步设置在第二排气通道中的差压计的测量值变得基本上等于写在工作台中的压差。

2. 发明申请

US20110100489A1 SUBSTRATE PROCESS APPARATUS, SUBSTRATE PROCESS METHOD, AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：基板工艺设备，基板工艺方法和计算机可读存储介质
公开(公告)号：US20110100489A1
公开(公告)日：2011-05-05
申请号：US12916667
申请日：2010-11-01
申请人： Kohichi Orito , Manabu Honma , Tatsuya Tamura
发明人： Kohichi Orito , Manabu Honma , Tatsuya Tamura
IPC分类号： F17D1/00
CPC分类号： H01L21/67253 , C23C16/45502 , C23C16/45551 , C23C16/45557 , C23C16/45587 , H01L21/68764 , H01L21/68771 , Y10T137/8376
摘要： A vacuum chamber is evacuated through a first evacuation passage provided with a first valve and a second evacuation passage provided with a second valve. An opening degree of the first valve is adjusted so that a pressure in the vacuum chamber becomes substantially equal to a process pressure P; an opening degree of a butterfly valve further provided in the second evacuation passage is adjusted to substantially equal to a set value determined by a table in order to set flow rates of gases to be evacuated through the first evacuation passage and the second evacuation passage to be substantially equal to corresponding set values determined by the recipe; and an opening degree of the second valve is adjusted so that a measurement value of a differential pressure gauge further provided in the second evacuation passage becomes substantially equal to a differential pressure written in the table.
摘要翻译：通过设置有第一阀的第一抽空通道和设置有第二阀的第二抽空通道抽真空室。调节第一阀的开度，使得真空室中的压力基本上等于处理压力P; 进一步设置在第二排气通道中的蝶阀的开度被调整为基本上等于由工作台确定的设定值，以便将通过第一抽空通道和第二抽空通道排出的气体的流量设定为基本上等于由配方确定的相应设定值; 并且调节第二阀的开度，使得进一步设置在第二排气通道中的差压计的测量值变得基本上等于写在工作台中的压差。

3. 发明授权

US08721790B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08721790B2
公开(公告)日：2014-05-13
申请号：US12963673
申请日：2010-12-09
申请人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/453 , C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

4. 发明申请

US20100055297A1 FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM FOR FILM DEPOSITION METHOD 有权
标题翻译：薄膜沉积装置，基板处理装置，薄膜沉积方法和用于薄膜沉积方法的计算机可读存储介质
公开(公告)号：US20100055297A1
公开(公告)日：2010-03-04
申请号：US12547545
申请日：2009-08-26
申请人： HITOSHI KATO , Manabu Honma , Kohichi Orito
发明人： HITOSHI KATO , Manabu Honma , Kohichi Orito
IPC分类号： C23C16/52 , B05C11/10
CPC分类号： C23C16/45551 , C23C16/45557 , C23C16/4584 , C23C16/52
摘要： There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method.
摘要翻译：公开了一种膜沉积设备和薄膜沉积方法，用于通过进行向基板提供至少两种源气体以便形成反应产物层的循环，从而在基板上沉积膜，并且计算机可读存储用于使成膜装置进行成膜方法的计算机程序的存储介质。

5. 发明授权

US09416448B2 Film deposition apparatus, substrate processing apparatus, film deposition method, and computer-readable storage medium for film deposition method 有权
标题翻译：薄膜沉积装置，基板处理装置，薄膜沉积方法和用于薄膜沉积方法的计算机可读存储介质
公开(公告)号：US09416448B2
公开(公告)日：2016-08-16
申请号：US12547545
申请日：2009-08-26
申请人： Hitoshi Kato , Manabu Honma , Kohichi Orito
发明人： Hitoshi Kato , Manabu Honma , Kohichi Orito
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C23C16/45551 , C23C16/45557 , C23C16/4584 , C23C16/52
摘要： There is disclosed a film deposition apparatus and a film deposition method for depositing a film on a substrate by carrying out cycles of supplying in turn at least two source gases to the substrate in order to form a layer of a reaction product, and a computer readable storage medium storing a computer program for causing the film deposition apparatus to carry out the film deposition method.
摘要翻译：公开了一种膜沉积设备和薄膜沉积方法，用于通过进行向基板提供至少两种源气体以便形成反应产物层的循环，从而在基板上沉积膜，并且计算机可读存储用于使成膜装置进行成膜方法的计算机程序的存储介质。

6. 发明申请

US20110139074A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20110139074A1
公开(公告)日：2011-06-16
申请号：US12963673
申请日：2010-12-09
申请人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/458 , C23C16/00
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

7. 发明授权

US08944077B2 Film deposition apparatus, cleaning method for the same, and computer storage medium storing program 有权
标题翻译：薄膜沉积设备，其清洁方法和计算机存储介质存储程序
公开(公告)号：US08944077B2
公开(公告)日：2015-02-03
申请号：US12617779
申请日：2009-11-13
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/00 , B08B7/00 , C23C16/44 , H01L21/67 , H01L21/687
CPC分类号： B08B7/0035 , C23C16/4405 , H01L21/67028 , H01L21/68764 , H01L21/68771
摘要： A disclosed film deposition apparatus includes a susceptor provided rotatably in a chamber; a substrate receiving portion provided in one surface of the susceptor, for receiving a substrate; a reaction gas supplying member configured to supply a reaction gas to the one surface of the susceptor; a cleaning member including: a first concave member that is provided above the susceptor and open toward the one surface, thereby defining a space of an inverted concave shape, a second concave member provided over the first concave member to define a gas passage between the first concave member and the second concave member, a cleaning gas supplying portion configured to supply a cleaning gas to the space, and an evacuation pipe configured to be in gaseous communication with the gas passage and extend out from the chamber; and an evacuation opening provided in the chamber in order to evacuate the chamber.
摘要翻译：公开的薄膜沉积设备包括可旋转地设置在腔室中的基座; 衬底接收部，设置在所述基座的一个表面中，用于接收衬底; 反应气体供给部件，被配置为向所述基座的一个表面供给反应气体; 清洁部件，包括：设置在所述基座上方并朝向所述一个表面开口的第一凹入部件，由此限定倒置凹部的空间;设置在所述第一凹部部件上方的第二凹部部件，凹构件和第二凹构件，构造成向所述空间供给清洁气体的清洁气体供给部和构造成与所述气体通道气体连通并从所述室延伸出的排气管; 以及设置在腔室中以排空腔室的排气口。

8. 发明授权

US08840727B2 Film deposition apparatus, substrate processor, film deposition method, and computer-readable storage medium 有权
标题翻译：薄膜沉积装置，基板处理器，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US08840727B2
公开(公告)日：2014-09-23
申请号：US12550528
申请日：2009-08-31
申请人： Hitoshi Kato , Manabu Honma
发明人： Hitoshi Kato , Manabu Honma
IPC分类号： C23C16/455 , C23C16/00 , C23C16/52 , H01L21/687 , H01L21/67
CPC分类号： C23C16/52 , C23C16/45544 , C23C16/45565 , H01L21/67109 , H01L21/68764 , H01L21/68771
摘要： A film deposition apparatus for depositing a thin film on a substrate by feeding at least two kinds of reaction gases in a vacuum chamber includes a turntable; a substrate placement part on the turntable; a first and a second reaction gas feed part provided apart from each other to feed a first and a second reaction gas into a first and a second process region, respectively, on the turntable; a separation region positioned between the first and second process regions and including a first separation gas feed part to feed a first separation gas and a ceiling surface; a center part region positioned inside the vacuum chamber and including an ejection opening for ejecting a second separation gas; an evacuation port; and a drive part to rotate the turntable so that the substrate passes through the first and second process regions at different angular velocities of the turntable.
摘要翻译：一种用于通过在真空室中馈送至少两种反应气体而将薄膜沉积在基底上的成膜装置包括转台; 转盘上的基板放置部分; 第一和第二反应气体供给部，彼此分开设置，以将第一和第二反应气体分别输送到转台上的第一和第二处理区域; 位于所述第一处理区域和所述第二处理区域之间并且包括用于供给第一分离气体和顶面的第一分离气体进料部分的分离区域; 位于真空室内的中心部分区域，并且包括用于喷射第二分离气体的喷射口; 撤离港以及用于旋转转盘的驱动部件，使得基板以不同的转台角速度穿过第一和第二处理区域。

9. 外观设计

USD655262S1 Side wall for reactor for manufacturing semiconductor 有权
标题翻译：用于制造半导体的反应堆的侧壁
公开(公告)号：USD655262S1
公开(公告)日：2012-03-06
申请号：US29389569
申请日：2011-04-13
申请人： Manabu Honma , Katsuyuki Hishiya
设计人： Manabu Honma , Katsuyuki Hishiya

10. 外观设计

USD655261S1 Gas-separating plate for reactor for manufacturing semiconductor 有权
公开(公告)号：USD655261S1
公开(公告)日：2012-03-06
申请号：US29389566
申请日：2011-04-13
申请人： Manabu Honma , Katsuyuki Hishiya
设计人： Manabu Honma , Katsuyuki Hishiya

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