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1. 发明授权

US5086548A Buckle device for seatbelt system 失效
标题翻译：用于安全带系统的带扣装置
公开(公告)号：US5086548A
公开(公告)日：1992-02-11
申请号：US578285
申请日：1990-09-06
申请人： Kohbun Tanaka , Hiroshi Tsuge
发明人： Kohbun Tanaka , Hiroshi Tsuge
IPC分类号： A44B11/25
CPC分类号： A44B11/2549 , A44B11/2534 , Y10S24/35 , Y10T24/45084 , Y10T24/45618 , Y10T24/45785
摘要： A buckle device for a car seatbelt system is used together with a plurality of tongue plates to which occupant securing webbings are connected. Lock members for engaging the tongue plates are released upon operating a single release button. The shifting direction of the release button is confined in a plane defined by the insertion directions of the tongue plates. The operation force of the release button is transmitted to the lock members via a mechanism for example cam-contact or link mechanism. Therefore, the operation necessary for a passenger at the time of release is only to push the release button. There is no need to hold or pinch the buckle device at any time.
摘要翻译：用于汽车安全带系统的带扣装置与多个舌板一起使用，乘员固定网带连接到该多个舌板。在操作单个释放按钮时释放用于接合舌板的锁定构件。释放按钮的移动方向被限制在由舌板的插入方向限定的平面中。释放按钮的操作力通过例如凸轮接触或连杆机构的机构传递到锁定构件。因此，在释放时乘客所需的操作只是推动释放按钮。任何时候都不需要握住或夹住带扣装置。

2. 发明申请

US20130320357A1 EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：外延硅碳化物单晶基板及其制造方法
公开(公告)号：US20130320357A1
公开(公告)日：2013-12-05
申请号：US13985810
申请日：2012-04-20
申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro , Wataru Ito
发明人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro , Wataru Ito
IPC分类号： H01L29/30
CPC分类号： H01L29/30 , C23C16/325 , C30B25/02 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L29/045 , H01L29/1608
摘要： Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm2 in total. Additionally, the method for producing the epitaxial silicon carbide single crystal substrate forms the epitaxial layer by using chlorosilane as a silicon-based material gas and hydrocarbon gas as a carbon-based gas, at a growth temperature of 1600° C. to 1700° C., at a C/Si ratio of 0.5 to 1.0, and at a growth rate of 1 to 3 μm/hr.
摘要翻译：本发明提供一种外延碳化硅单晶衬底，其具有在碳化硅单晶衬底上具有较少堆垛层错的高质量碳化硅单晶薄膜及其制造方法。外延碳化硅单晶衬底通过在偏离角为4°或更小的碳化硅单晶衬底上生长碳化硅外延层而制造，使得发射400至600nm波长的光的堆垛层错数通过底物上的光致发光总共小于10 / cm2。此外，外延碳化硅单晶衬底的制造方法在1600℃至1700℃的生长温度下，使用氯硅烷作为硅系材料气体和烃气体作为碳系气体，形成外延层，C / Si比为0.5〜1.0，生长速度为1〜3mum / hr。

3. 发明申请

US20130217213A1 PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE 有权
标题翻译：外壳碳化硅单晶基板的生产工艺
公开(公告)号：US20130217213A1
公开(公告)日：2013-08-22
申请号：US13881231
申请日：2011-11-15
申请人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Masakazu Katsuno , Tatsuo Fujimoto , Hirokatsu Yashiro
IPC分类号： H01L21/02
CPC分类号： H01L21/02378 , C30B25/02 , C30B25/18 , C30B25/186 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02658 , Y10S438/931
摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle.According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.
摘要翻译：本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度从0.0001变为0.0001〜，从而在1550〜1650℃的温度下进行0.1〜1μm的深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

4. 发明申请

US20110278596A1 Epitaxial silicon carbide monocrystalline substrate and method of production of same 审中-公开
标题翻译：外延碳化硅单晶基板及其生产方法相同
公开(公告)号：US20110278596A1
公开(公告)日：2011-11-17
申请号：US13138270
申请日：2010-01-29
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakasu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L29/24 , C30B25/02
CPC分类号： H01L21/02609 , C23C16/325 , C30B25/14 , C30B25/186 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02587 , H01L21/0262 , H01L21/02634
摘要： The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
摘要翻译：本发明提供一种外延SiC单晶衬底，其具有使用具有6°或更小的偏离角的衬底在外延生长中抑制发生步骤聚集的高质量外延膜的外延SiC单晶衬底及其制造方法，即外延该外延碳化硅单晶衬底由形成有碳化硅单晶薄膜的偏离角为6°以下的碳化硅单晶衬底构成，其特征在于，所述碳化硅单晶薄膜的表面具有 0.5nm以下的表面粗糙度（Ra值）及其制造方法。

5. 发明授权

US07972704B2 Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom 有权
标题翻译：单晶碳化硅锭，以及从其获得的基板和外延晶片
公开(公告)号：US07972704B2
公开(公告)日：2011-07-05
申请号：US12735405
申请日：2009-01-14
申请人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
发明人： Noboru Ohtani , Masakazu Katsuno , Hiroshi Tsuge , Masashi Nakabayashi , Tatsuo Fujimoto
IPC分类号： B32B9/04
CPC分类号： H01L21/0262 , C30B23/00 , C30B23/002 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/0254 , H01L21/02634 , H01L21/046 , H01L21/0495 , H01L29/6606 , Y10T428/24355
摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm−3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.
摘要翻译：本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。是含有浓度为2×1018 cm -3〜6×1020cm-3的供体型杂质和1×1018浓度的受主型杂质的单晶碳化硅单晶碳化硅锭 cm-3〜5.99×1020cm-3，其中施主型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3，从其获得的基板和外延晶片。

6. 发明授权

US5523663A Method for controlling a manipulator relative to a moving workpiece 失效
标题翻译：用于相对于移动的工件控制机械手的方法
公开(公告)号：US5523663A
公开(公告)日：1996-06-04
申请号：US058732
申请日：1993-05-07
申请人： Hiroshi Tsuge , Mamoru Minami
发明人： Hiroshi Tsuge , Mamoru Minami
IPC分类号： B25J9/10 , B25J5/00 , B25J9/16 , B25J13/08 , B25J19/02 , G05B19/18 , G05B19/404
CPC分类号： B25J19/023 , B25J9/162 , G05B2219/37563 , G05B2219/39394 , G05B2219/39417 , G05B2219/40298 , G05B2219/40613
摘要： A method for real-time three-dimensional control of position and attitude of an end effector of a manipulator relative to a moving workpiece. Angles of revolute joints of the manipulator are controlled by harmonizing a first control methodology, wherein the z-axis coordinate of the end effector and the attitude of the end effector are controlled based on input target values for the position and attitude of the end effector, with a second control methodology, wherein the x-axis and y-axis coordinates of the end effector are controlled responsive to image data captured by a camera mounted to the manipulator.
摘要翻译：一种用于实时三维控制机械手的端部执行器相对于移动工件的位置和姿态的方法。通过协调第一控制方法来控制操纵器的旋转关节的角度，其中基于末端执行器的位置和姿态的输入目标值来控制末端执行器的z轴坐标和末端执行器的姿态，具有第二控制方法，其中响应于安装到操纵器的照相机拍摄的图像数据来控制末端执行器的x轴和y轴坐标。

7. 发明授权

US4991874A Webbing retractor 失效
标题翻译：织带牵开器
公开(公告)号：US4991874A
公开(公告)日：1991-02-12
申请号：US500561
申请日：1990-03-28
申请人： Hiroshi Tsuge , Shinji Mori
发明人： Hiroshi Tsuge , Shinji Mori
IPC分类号： B60R22/32 , B60R22/34 , B60R22/36 , B60R22/40
CPC分类号： B60R22/40 , B60R22/3416 , B60R2022/3424
摘要： A webbing retractor for winding a webbing which is fastened around a seat occupant of a vehicle is arranged such that a claw member is engaged with a ratchet wheel fixed to a webbing take-up shaft and rotation of the take-up shaft in a direction in which the webbing is drawn out is thereby prevented when the speed of the vehicle suddenly reduces. Engagement of the claw member with the ratchet wheel is achieved by engaging a rotary wheel which is rotated in the same direction as that in which the take-up shaft is rotated with a driving plate which drives the claw member to cause it to be engaged with the ratchet wheel through a cam ring and an engaging lever. In consequence, the rotational force of the rotary wheel is reliably transmitted to the driving plate by means of the cam ring and the engaging lever.
摘要翻译：用于卷绕紧固在车辆的座椅乘员上的织带的织带卷收器被布置成使得爪构件与固定到织带卷绕轴上的棘轮啮合，并且卷绕轴沿着方向因此，当车辆的速度突然减小时，防止织带被拉出。爪构件与棘轮的接合通过使转动轮与驱动爪构件的驱动板沿与旋转轴相同的方向旋转以使其与棘轮通过凸轮环和接合杆。因此，通过凸轮环和接合杆将旋转轮的旋转力可靠地传递到驱动板。

8. 发明授权

US4613188A Child restraining device 失效
标题翻译：儿童约束装置
公开(公告)号：US4613188A
公开(公告)日：1986-09-23
申请号：US683234
申请日：1984-12-18
申请人： Hiroshi Tsuge , Akinori Fujiwara , Hiroki Iwasa , Chikao Nagasaka , Tsutomu Muraoka
发明人： Hiroshi Tsuge , Akinori Fujiwara , Hiroki Iwasa , Chikao Nagasaka , Tsutomu Muraoka
IPC分类号： B60N2/26 , B60N2/28 , B60N2/90 , A47C1/08
CPC分类号： B60N2/2806 , B60N2/2821 , B60N2/286 , B60N2/2863
摘要： A child restraining device is provided with a reclining mechanism including a supporting member for supporting a child receiving vessel mounted rotatably in a step manner thereon through crank means.Accordingly, the vessel can be reclined readily in the step manner.
摘要翻译：儿童约束装置设置有倾斜机构，该倾斜机构包括用于支撑通过曲柄装置以其步进方式可旋转地安装的儿童接收容器的支撑构件。因此，容器可以以步骤方式容易地倾斜。

9. 发明授权

US4536010A Automatic seatbelt system 失效
标题翻译：自动安全带系统
公开(公告)号：US4536010A
公开(公告)日：1985-08-20
申请号：US610939
申请日：1984-05-17
申请人： Muneharu Matsunami , Hiroshi Tsuge , Tatsushi Kubota , Hisashi Ogawa
发明人： Muneharu Matsunami , Hiroshi Tsuge , Tatsushi Kubota , Hisashi Ogawa
IPC分类号： B60R22/04 , B60R22/18 , B60R22/24 , B60R21/10
CPC分类号： B60R22/04 , B60R2022/1825
摘要： An automatic system for use in a motor vehicle has an outer webbing, both ends of which are secured to a vehicle door and an inner webbing, one end of which is connected to the intermediate portion of the outer webbing through a ring joint movable along the outer webbing and the other end of which is retracted by a retractor on a vehicle floor. A guide lever is provided at an inner side of an occupant's seat, which includes a main body fixed to the inner side of the seat and a webbing guide portion on the top of the main body. The webbing guide portion has an opening through which the inner webbing passes and is rotatable around an axis extending laterally of the vehicle, whereby the webbing guide portion presents a suitable position and angle to guide the inner webbing at any condition, for example, with or without an occupant on the seat.
摘要翻译：一种用于机动车辆的自动系统具有外部织带，其两端固定到车门和内部织带，其一端通过环形接头连接到外部织带的中间部分，环形连接件可沿着外部织带，另一端由牵开器收回在车辆地板上。引导杆设置在乘员座椅的内侧，该导向杆包括固定在座椅内侧的主体和主体顶部的织带引导部。带状引导部分具有开口，内部织带穿过该开口，并且可绕着从车辆横向延伸的轴线旋转，由此，带状引导部分呈现合适的位置和角度，以在任何条件下引导内部织带，例如用或没有座位上的乘客。

10. 发明授权

US09691607B2 Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same 有权
公开(公告)号：US09691607B2
公开(公告)日：2017-06-27
申请号：US13639309
申请日：2011-04-07
申请人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
发明人： Takashi Aigo , Hiroshi Tsuge , Taizo Hoshino , Tatsuo Fujimoto , Masakazu Katsuno , Masashi Nakabayashi , Hirokatsu Yashiro
IPC分类号： H01L21/02 , C30B25/10 , C30B29/36
CPC分类号： H01L21/02378 , C30B25/10 , C30B29/36 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/02661
摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

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