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1. 发明授权

US5843521A Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer 失效
标题翻译：光电阻框架电磁换能器极层采用高磁导率种子层
公开(公告)号：US5843521A
公开(公告)日：1998-12-01
申请号：US897796
申请日：1997-07-21
申请人： Kochan Ju , Mao-Min Chen , Yimin Guo
发明人： Kochan Ju , Mao-Min Chen , Yimin Guo
IPC分类号： G11B5/31 , G11B5/39 , B05D5/12
CPC分类号： G11B5/3967 , G11B5/3103 , G11B5/3113 , G11B5/3146 , G11B5/3163 , Y10T428/1186 , Y10T428/265 , Y10T428/31678
摘要： A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.
摘要翻译：一种用于形成磁换能器的方法，以及通过该方法形成的磁换能器。首先提供基板。然后在衬底上形成第一磁极层。然后在第一磁极层上形成间隙填充介电层。然后在填充介电层的间隙上形成种子层。然后在种子层上形成光致抗蚀剂框架，该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法，其中光致抗蚀剂框架的侧壁的基部具有锥形，其在电镀第二磁极层的边缘与其种子层的界面处。然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上，其中籽晶层由厚度形成，并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿由于镀覆的第二磁极层内的凹口，在第一磁极层和镀覆的第二磁极层之间。用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。

2. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

3. 发明授权

US07012789B2 Composite shared pole design for magnetoresistive merged heads 失效
标题翻译：用于磁阻合并头的复合共享极设计
公开(公告)号：US07012789B2
公开(公告)日：2006-03-14
申请号：US10131675
申请日：2002-04-24
申请人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei Wei Chang
发明人： Kochan Ju , Cherng-Chyi Han , Po-Kang Wang , Mao-Min Chen , Chun Liu , Jei Wei Chang
IPC分类号： G11B5/127
CPC分类号： G11B5/3912 , G11B5/3967 , Y10T29/49044 , Y10T29/49046
摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.
摘要翻译：合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。在第一屏蔽层上形成具有磁阻头的读取间隙层。共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。在共享极的第一高磁矩极点上形成写间隙层。上极包括写间隙层上的高磁矩极点层。

4. 发明授权

US06287476B1 Electrochemical method to improve MR reader edge definition and device reliability 失效
标题翻译：电化学方法提高MR读取器边缘定义和器件可靠性
公开(公告)号：US06287476B1
公开(公告)日：2001-09-11
申请号：US09332429
申请日：1999-06-14
申请人： Kochan Ju , Shou-Chen Kao , Cherng-Chyi Han , Jei-Wei Chang , Mao-Min Chen
发明人： Kochan Ju , Shou-Chen Kao , Cherng-Chyi Han , Jei-Wei Chang , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/40 , G11B2005/3996
摘要： A method to form a passivation layer using an electrochemical process over a MR Sensor so that the passivation layer defines the MR track width. The passivation layer is formed by anodizing the MR sensor. The passivation layer is an electrical insulator (preventing Sensor current (I) from shunting through the overspray) and a heat conductor to allow MR heat to dissipate away from the MR sensor through the overspray. The method comprises: forming a passivation layer on the MR sensor; the passivation layer formed using an electrochemical process. Then we spinning-on and printing a lift-off photoresist structure over the passivation layer. The passivation layer is etched to remove the passivation layer not covered by the lift-off structure thereby defining a track width of the MR sensor. Then we deposit a lead layer over the passivation layer and MR sensor. The lift-off structure is removed where by the passivation layer defines a track width. The passivation layer is an electrical insulator that prevents sensor current (I) form shunting through overspray layers while allowing heat to dissipate through to the lead layer.
摘要翻译：使用MR传感器上的电化学过程形成钝化层的方法，使得钝化层限定MR磁道宽度。通过阳极氧化MR传感器形成钝化层。钝化层是电绝缘体（防止传感器电流（I）通过过喷）分流）和热导体，以允许MR热量通过过喷器散射离开MR传感器。该方法包括：在MR传感器上形成钝化层; 使用电化学工艺形成钝化层。然后我们旋转并在钝化层上印刷剥离光致抗蚀剂结构。蚀刻钝化层以除去未被剥离结构覆盖的钝化层，从而限定MR传感器的轨道宽度。然后我们在钝化层和MR传感器上沉积铅层。去除剥离结构，其中钝化层限定轨道宽度。钝化层是电绝缘体，其防止传感器电流（I）通过过喷层形成分流，同时允许热量散发到引线层。

5. 发明授权

US6103136A Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) 失效
公开(公告)号：US6103136A
公开(公告)日：2000-08-15
申请号：US46007
申请日：1998-03-23
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju
IPC分类号： G01R33/09 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

6. 发明授权

US6091589A Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：具有电绝缘软相邻层（SAL）的软相邻层（SAL）磁阻（MR）传感器元件
公开(公告)号：US6091589A
公开(公告)日：2000-07-18
申请号：US320756
申请日：1999-05-27
申请人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
发明人： Cherng-Chyi Han , Mao-Min Chen , Chien-Li Lin , Kochan Ju , Cheng Tzong Horng
IPC分类号： G01R33/09 , G11B5/39 , G01B7/14
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B5/399 , G11B5/3932 , Y10T29/49044 , Y10T29/49046
摘要： Within a soft adjacent layer (SAL) magnetoresistive (MR) sensor element which may be employed within a magnetic head there is first employed a substrate. Formed over the substrate is a soft adjacent layer (SAL). In turn, formed upon the soft adjacent layer (SAL) is a dielectric layer. Finally, in turn, formed at least in part upon the dielectric layer is a magnetoresistive (MR) layer. Within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element the soft adjacent layer (SAL) and the dielectric layer are planar. In addition, within the soft adjacent layer (SAL) magnetoresistive (MR) sensor element both an upper surface of the magnetoresistive (MR) layer and a lower interface of the magnetoresistive (MR) layer are non-planar.
摘要翻译：在可以在磁头内使用的软相邻层（SAL）磁阻（MR）传感器元件中，首先采用衬底。形成在衬底上的是软相邻层（SAL）。另外，形成在软相邻层（SAL）上的是电介质层。最后，至少部分地形成在电介质层上的是磁阻（MR）层。在软相邻层（SAL）磁阻（MR）传感器元件内，软相邻层（SAL）和电介质层是平面的。此外，在软相邻层（SAL）磁阻（MR）传感器元件内，磁阻（MR）层的上表面和磁阻（MR）层的下界面都是非平面的。

7. 发明授权

US5985162A Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) 失效
标题翻译：用电绝缘软相邻层（SAL）形成软相邻层（SAL）磁阻（MR）传感器元件的方法
公开(公告)号：US5985162A
公开(公告)日：1999-11-16
申请号：US810059
申请日：1997-03-05
申请人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
发明人： Cherng-Chyi Han , Mao-Min Chen , Kochan Ju
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12 , B44C1/22
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3967 , H01L43/12 , G11B5/313 , G11B5/3163
摘要： A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substrate a dielectric layer which has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer in contact with the first surface of the dielectric layer. Similarly, there is also formed over the substrate a soft adjacent layer (SAL) in contact with the second surface of the blanket dielectric layer, where the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the dielectric layer are planar and preferably at least substantially co-extensive. The invention contemplates the soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed through the method of the invention.
摘要翻译：软相邻层（SAL）磁阻（MR）传感器元件和用于制造软相邻层（SAL）磁阻（MR）传感器元件的方法。为了实践该方法，首先提供了一种衬底。在衬底上形成介电层，其具有电介质层的第一表面和与电介质层的第一表面相对的电介质层的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。类似地，还在衬底上形成与橡皮布介电层的第二表面接触的软相邻层（SAL），其中磁阻（MR）层，软相邻层（SAL）和电介质层是平面的，优选至少基本上共同扩展。本发明设想通过本发明的方法形成的软相邻层（SAL）磁阻（MR）传感器元件。

8. 发明授权

US07106558B2 Biased spin valve head with canted adjacent layer and current channeling layer 失效
公开(公告)号：US07106558B2
公开(公告)日：2006-09-12
申请号：US10868713
申请日：2004-06-15
申请人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
发明人： Kochan Ju , You Feng Zheng , Mao-Min Chen , Cherng-Chyi Han , Charles Lin
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B2005/3996
摘要： A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

9. 发明授权

US06882509B2 GMR configuration with enhanced spin filtering 有权
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06882509B2
公开(公告)日：2005-04-19
申请号：US10791021
申请日：2004-03-02
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng T. Horng , Kochan Ju , Simon Liao
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01F10/00 , H01F10/06 , H01F10/12 , H01F10/14 , H01F10/16 , H01F10/18 , H01F10/30 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.
摘要翻译：公开了一种制造SVGMR传感器元件的方法。在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。金属氧化物缓冲层增强了镜面散射。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

10. 发明授权

US06775903B2 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer 失效
标题翻译：用于制造具有合成固定层的顶部磁阻传感器元件的方法
公开(公告)号：US06775903B2
公开(公告)日：2004-08-17
申请号：US09953546
申请日：2001-09-17
申请人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
发明人： Cheng T. Horng , Kochan Ju , Mao-Min Chen , Min Li , Ru-Ying Tong , Simon Liao
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3295 , Y10T29/49032 , Y10T29/49034 , Y10T29/49039 , Y10T29/49044 , Y10T29/49055
摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
摘要翻译：用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。由此生产的传感器结构适用于高密度应用。

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