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1. 发明专利

JP2013064756A Pyroelectric infrared sensor 有权
标题翻译：微电子红外传感器
公开(公告)号：JP2013064756A
公开(公告)日：2013-04-11
申请号：JP2012280640
申请日：2012-12-25
申请人： Kobe Univ , 国立大学法人神戸大学 , Daikin Ind Ltd , ダイキン工業株式会社
发明人： ISHIDA KENJI , KUWAJIMA SHUICHIRO , MATSUSHIGE KAZUMI , HORIUCHI YOSHITOSHI , MATSUMOTO YUJI , KOTANI TETSUHIRO , KO MEITEN
IPC分类号： G01J1/02 , G01J5/34 , H01L37/02
摘要： PROBLEM TO BE SOLVED: To provide a deformable high sensitivity pyroelectric infrared sensor.SOLUTION: The pyroelectric infrared sensor includes: a flexible substrate 41B formed from high polymer material such as polyimide or polyethylene terephthalate; a layer 43B formed from vinylidene fluoride (VDF) oligomer; and flexible electrodes 44B and 42B formed of Al deposition film or the like over the top and the bottom of the VDF oligomer layer 43B. With the flexibility of the component elements, the entire pyroelectric infrared sensor has flexibility. Also, plural actuators 46 are disposed around the substrate 41B. The pyroelectric infrared sensor is deformable in a desired shape having different curvature by adjusting the pressing force by the actuators 46. Since the heat capacity and thermal conductivity of the substrate formed from the high polymer material are lower than those of a substrate formed of Si or the like used for conventional pyroelectric infrared sensor, the sensitivity is enhanced.
摘要翻译：要解决的问题：提供可变形的高灵敏度热释电红外传感器。热解红外线传感器包括：由高分子材料如聚酰亚胺或聚对苯二甲酸乙二醇酯形成的柔性基底41B; 由偏二氟乙烯（VDF）低聚物形成的层43B; 以及在VDF低聚物层43B的顶部和底部上由Al沉积膜等形成的柔性电极44B和42B。具有组件元件的灵活性，整个热释电红外传感器具有灵活性。此外，多个致动器46设置在基板41B周围。通过调节致动器46的按压力，热电型红外线传感器可以变形成具有不同曲率的期望形状。由于由高分子材料形成的基板的热容量和热导率低于由Si或用于常规热释电红外传感器的灵敏度提高。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2008042102A Ferroelectric memory 审中-公开
标题翻译：电磁记忆
公开(公告)号：JP2008042102A
公开(公告)日：2008-02-21
申请号：JP2006217620
申请日：2006-08-10
申请人： Daikin Ind Ltd , Kyoto Univ , ダイキン工業株式会社 , 国立大学法人京都大学
发明人： ISHIDA KENJI , KUWAJIMA SHUICHIRO , MATSUSHIGE KAZUMI , HORIUCHI YOSHITOSHI , KOTANI TETSUHIRO , KO MEITEN
IPC分类号： H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/28 , H01L29/788 , H01L29/792 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide a 1T type ferroelectric memory easy to fabricate while oxidation of channel and mixing of impurity to the channel of FET can be prevented.
SOLUTION: Ferroelectric memory of this invention includes a channel 14 consisting of p-type or n-type semiconductor between a source electrode 12 and a drain electrode 13; a recording layer 15 made of ferroelectric body on the channel 14; and a gate electrode 16. It is characterized that the recording layer 15 consists of a self-organization film stuck chemically onto the surface of the channel 14. In order to fabricate the ferroelectric memory, the recording layer 15 can be formed only by contacting the front face of the channel 14 into solution of the material of the self-organization film. In addition, heating is not required for fabricating the recording layer 15, so oxidation of the channel 14 or the mixing of impurity to the channel 14 can be prevented.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供容易制造的1T型铁电存储器，同时可以防止沟道的氧化和杂质混入FET的沟道。本发明的铁电体存储器包括在源电极12和漏电极13之间由p型或n型半导体构成的沟道14; 在通道14上由铁电体制成的记录层15; 其特征在于，记录层15由化学地粘附在通道14的表面上的自组织膜组成。为了制造铁电存储器，记录层15可以仅通过使通道14的前面成为自组织膜材料的溶液。此外，制造记录层15不需要加热，因此可以防止通道14的氧化或杂质与通道14的混合。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008240025A Apparatus and method for thin film formation, method for enabling polarization reversal, method for measuring ferroelectric property, thin film and capacitor structure 有权
标题翻译：用于薄膜形成的装置和方法，用于实现极化反转的方法，用于测量电性能，薄膜和电容器结构的方法
公开(公告)号：JP2008240025A
公开(公告)日：2008-10-09
申请号：JP2007079132
申请日：2007-03-26
申请人： Daikin Ind Ltd , Kyoto Univ , ダイキン工業株式会社 , 国立大学法人京都大学
发明人： HORIE SATOSHI , ISHIDA KENJI , MATSUSHIGE KAZUMI , KOTANI TETSUHIRO , KO MEITEN
IPC分类号： C23C14/12 , C23C14/24 , H01G4/18
摘要： PROBLEM TO BE SOLVED: To provide an apparatus 1 for thin film formation, capable of efficiently forming a thin film 51 in a short period of time.
SOLUTION: An evaporation source 30 in which a VDF oligomer 33 is disposed and a substrate 10 to be subjected to vapor deposition are separated from each other while the evaporation source 30 is heated. Then, a separated state in which the substrate 10 and the evaporation source 30 are separated from each other is shifted into a neighboring state in which a thin film formation surface 11 of the substrate 10 and a VDF oligomer supplying surface 32 of the evaporation source 30 come close to and face each other across a heat-insulating mask 20 by moving the substrate 10 and/or the evaporation source 30. In the neighboring state, the thin film 51 of the VDF oligomer 33 is deposited onto the thin film formation surface 11.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够在短时间内有效地形成薄膜51的薄膜形成装置1。解决方案：在蒸发源30被加热的同时，其中设置有VDF低聚物33的蒸发源30和要进行气相沉积的基板10彼此分离。然后，基板10和蒸发源30彼此分离的分离状态转移到基板10的薄膜形成表面11和蒸发源30的VDF低聚物供应表面32的相邻状态通过移动基板10和/或蒸发源30而靠近隔热掩模20并相互面对。在相邻状态下，将VDF低聚物33的薄膜51沉积到薄膜形成表面11上版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007255929A Pyroelectric infrared sensor 审中-公开
标题翻译：光电红外传感器
公开(公告)号：JP2007255929A
公开(公告)日：2007-10-04
申请号：JP2006077320
申请日：2006-03-20
申请人： Daikin Ind Ltd , Kyoto Univ , ダイキン工業株式会社 , 国立大学法人京都大学
发明人： ISHIDA KENJI , KUWAJIMA SHUICHIRO , MATSUSHIGE KAZUMI , HORIUCHI YOSHITOSHI , MATSUMOTO YUJI , KOTANI TETSUHIRO , KO MEITEN
IPC分类号： G01J1/02 , H01L37/02
CPC分类号： G01J5/34 , H01L37/025
摘要： PROBLEM TO BE SOLVED: To provide a pyroelectric infrared sensor capable of deformation and high in sensitivity.
SOLUTION: The flexible substrate 11 consists of polymeric material such as polyimide or polyethylene terephthalate, and the layer 13 which consists of vinylidene fluoride (VDF) oligomer is provided, and up and down side of the VDF oligomer layer 13, the flexible electrodes 12 and 14 formed by Al deposition membranes are provided. By the flexibility of these constitutional elements, the pyroelectric infrared sensor of this invention is provided with flexibility as a whole, and capable of deformation into desired shape. The substrate of polymeric material is lower heat capacity and lower heat conductivity than the conventional substrate of Si used for the conventional pyroelectric infrared sensor, therefore the sensitivity of the sensor can be improved.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够变形并且灵敏度高的热释电红外传感器。解决方案：柔性基板11由诸如聚酰亚胺或聚对苯二甲酸乙二醇酯的聚合材料组成，并且提供由偏二氟乙烯（VDF）低聚物组成的层13，以及VDF低聚物层13的上下侧，柔性基板提供由Al沉积膜形成的电极12和14。通过这些结构元件的柔性，本发明的热释电红外线传感器整体上具有柔性，能够变形成所需的形状。聚合物材料的基底与传统的热电型红外线传感器所使用的传统硅基板相比，热容量低，热导率低，因此能够提高传感器的灵敏度。版权所有（C）2008，JPO＆INPIT

5. 发明公开

EP1998153A4 CURRENT PYROELECTRIC INFRARED SENSOR 审中-公开
标题翻译：热释红外电流传感器
公开(公告)号：EP1998153A4
公开(公告)日：2012-12-05
申请号：EP07738967
申请日：2007-03-19
申请人： DAIKIN IND LTD
发明人： ISHIDA KENJI , KUWAJIMA SHUICHIRO , MATSUSHIGE KAZUMI , HORIUCHI TOSHIHISA , MATSUMOTO ARIFUMI , KODANI TETSUHIRO , KOH MEITEN
IPC分类号： G01J1/02 , H01L37/02
CPC分类号： G01J5/34 , H01L37/025
摘要： There is provided a pyroelectric infrared sensor being capable of changing its shape and having high sensitivity. The sensor comprises the substrate 11 made of a polymer material such as polyimide or polyethylene terephthalate and having flexibility, the layer 13 comprising vinylidene fluoride (VDF), and the flexible electrodes 12 and 14 comprising an Al-deposited film and provided on and under the VDF oligomer layer 13. The pyroelectric infrared sensor of the present invention has flexibility as a whole due to flexibility of each component elements and can be formed into desired shapes. In addition, since a substrate made of a polymer material has heat capacity and heat conductivity lower than those of Si substrates used on conventional pyroelectric infrared sensors, sensitivity of the sensor can be increased.

6. 发明专利

JPH02152281A PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPH02152281A
公开(公告)日：1990-06-12
申请号：JP30633288
申请日：1988-12-02
申请人： DAIKIN IND LTD
发明人： MATSUSHIGE KAZUMI
IPC分类号： H01L51/42 , H01L31/04
摘要： PURPOSE:To provide a photoelectric conversion device conspicuously excellent in photoelectric conversion efficiency by making an incident direction of light from a ferroelectric material as a vinylidene fluoride polymer parallel with said material. CONSTITUTION:A vinylidene fluoride polymer is available for a ferroelectric material and an incident direction of light from the ferroelectric material is made parallel with said material. For the VdF polymer there are included a VdF single polymer and a VdF copolymer, and for a preferable example of the copolymer there are available a VdF/trifluoroethylene (TrFE) copolymer with the VdF copolymerization ratio 35mol% or more, and the like. The ferroelectric material is formed into a thin film upon which light falls, having preferably about 1-200mum thickness. Light enters the sample in parallel to the same differing from prior technique where light enters a sample perpendicularly to the same, for increasing the absorbance thereof into the thin film sample and hence sharply increasing an APU current.

7. 发明专利

JP2522032B2 失效
公开(公告)号：JP2522032B2
公开(公告)日：1996-08-07
申请号：JP30633288
申请日：1988-12-02
申请人： DAIKIN IND LTD
发明人： MATSUSHIGE KAZUMI
IPC分类号： H01L51/42 , H01L31/04

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