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1. 发明专利

JP2007099540A Porous substrate and its preparation 有权
标题翻译：多孔基材及其制备
公开(公告)号：JP2007099540A
公开(公告)日：2007-04-19
申请号：JP2005289250
申请日：2005-09-30
申请人： Kobe Steel Ltd , Kyoto Univ , 国立大学法人京都大学 , 株式会社神戸製鋼所
发明人： HIRANO TAKAYUKI , KAWAKAMI NOBUYUKI , TANAKA TAKEHARU , SUZUKI TETSUO , FUKUMOTO YOSHITO , NAKANISHI KAZUKI , KANAMORI KAZUYOSHI
IPC分类号： C04B38/04 , B32B5/18 , B32B27/00 , C01B33/12 , H05K1/03
CPC分类号： H05K3/0011 , B32B21/04 , H05K1/024 , H05K1/0306 , H05K2201/0116 , Y10T428/249953 , Y10T428/249969
摘要： PROBLEM TO BE SOLVED: To provide a low transmission loss porous substrate which is a silicon-containing porous plate having an arbitrary thickness and a smooth surface and is provided with a smooth face homogeneous in nature with and nearly equivalent in thickness to the skeletal phase inside the porous substrate on the surface part of one face on which an electric/electronic circuit is formed. SOLUTION: A porous substrate provided with a smooth face homogeneous in nature with and nearly equivalent in thickness to the skeletal phase inside a porous substrate on the surface part of one face on which an electric/electronic circuit is formed is obtained by a method comprising the step of forming wet gel in a state separated into a three-dimensional network skeletal phase (solid phase) and a solvent-rich solution phase by a sol-gel reaction in the gap between a pair of flat plates, the step of drying and removing the solution from the wet gel, and the step of removing at least either of the pair of the flat plates. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种低透射率损失多孔基材，其是具有任意厚度和光滑表面的含硅多孔板，并且具有平滑表面，其性质与厚度相当且几乎等同于在其上形成电/电子电路的一个面的表面部分上的多孔基材内的骨架相。解决方案：在其上形成有电/电子电路的一个面的表面部分上的多孔基材内部具有平滑表面的多孔基材，其本质上具有均匀的光滑表面，并且几乎等同于多孔基材内的骨架相，其通过方法包括在一对平板之间的间隙中通过溶胶 - 凝胶反应在分离成三维网状骨架相（固相）和溶剂 - 凝胶反应的状态下形成湿凝胶的步骤，干燥并从湿凝胶中除去溶液，以及除去一对平板中的至少任一个的步骤。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2011035152A Thin-film transistor substrate and display device 审中-公开
标题翻译：薄膜晶体管基板和显示器件
公开(公告)号：JP2011035152A
公开(公告)日：2011-02-17
申请号：JP2009179677
申请日：2009-07-31
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OCHI MOTOTAKA , GOTO YASUSHI , FUKU KATSUFUMI , KAWAKAMI NOBUYUKI
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/3205 , H01L21/3213 , H01L21/336 , H01L21/768 , H01L23/52 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate, capable of preventing a dry etching rate of a source electrode and a drain electrode from deteriorating, preventing etching residues from occurring, and eliminating a barrier metal between a semiconductor layer and a wiring metal, such as, the source electrode or the drain electrode, and to provide a display device.
SOLUTION: In the thin-film transistor substrate including the semiconductor layer 1, the source electrode 2, the drain electrode 3, and a transparent conductive film 4, the source electrode 2 and the drain electrode 3 comprise an Al alloy thin film, containing Ge: 0.3 to 1.2 atom%, Ni: 0.1 to less than 1.0 atom%, La and/or Nd: 0.1 to 1.0 atom% formed through patterning by using a dry etching method and are connected directly to the semiconductor layer 1.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够防止源电极和漏电极的干蚀刻速率劣化的薄膜晶体管基板，防止蚀刻残留物发生，并且消除半导体层之间的阻挡金属以及诸如源电极或漏电极的布线金属，并提供显示装置。解决方案：在包括半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板中，源电极2和漏电极3包括Al合金薄膜，含有Ge：0.3〜1.2原子％，Ni：0.1〜小于1.0原子％，La和/或Nd：0.1〜1.0原子％，通过使用干蚀刻法构图而形成，并直接与半导体层1连接。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010245495A Wiring structure, thin film transistor substrate, method of manufacturing thin film transistor substrate and display 有权
标题翻译：导线结构，薄膜晶体管基板，制造薄膜晶体管基板和显示器的方法
公开(公告)号：JP2010245495A
公开(公告)日：2010-10-28
申请号：JP2009158769
申请日：2009-07-03
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , MIKI AYA , OCHI MOTOTAKA , MORITA SHINYA , YOKOTA YOSHIHIRO , FUKUMA SHINYA , GOTO YASUSHI
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/52 , H01L29/78 , H01L29/786
CPC分类号： H01L23/53238 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L21/28525 , H01L21/76843 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a direct contact technique by which a barrier metal layer between a Cu based alloy wiring composed of pure Cu or Cu alloy and a semiconductor layer is eliminated, and the Cu based alloy wiring is directly and securely connected to the semiconductor layer within a wide range of process margin. SOLUTION: A wiring structure has the semiconductor layer and Cu based alloy film composed of pure Cu or Cu alloy on a substrate in their order from the substrate side, and includes a laminate structure of: a (N, C, F, O) layer containing at least a kind of element selected from a group comprising nitrogen, carbon, fluorine and oxygen, between the semiconductor layer and Cu based alloy film in their order from the substrate side; and a Cu-Si diffusion layer containing Cu and Si. Any of elements such as nitrogen, carbon, fluorine and oxygen composing the (N, C, F, O) layer is coupled to Si of the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种直接接触技术，通过该技术，消除了由纯Cu或Cu合金构成的Cu基合金布线与半导体层之间的阻挡金属层，并且Cu基合金布线直接且可靠地在宽范围的工艺范围内连接到半导体层。解决方案：一种布线结构在基板上从基板侧开始依次具有由纯Cu或Cu合金构成的半导体层和Cu基合金膜，并且包括：（N，C，F， O）层，从半导体层和Cu基合金膜之间起依次包含从氮，碳，氟和氧中选择的至少一种元素; 以及含有Cu和Si的Cu-Si扩散层。构成（N，C，F，O）层的元素如氮，碳，氟和氧等与半导体层的Si耦合。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010177278A Variable capacitance element 有权
标题翻译：可变电容元件
公开(公告)号：JP2010177278A
公开(公告)日：2010-08-12
申请号：JP2009015666
申请日：2009-01-27
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TERAMAE YUMI , YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , HIRANO TAKAYUKI , TACHIBANA TAKESHI
IPC分类号： H01G7/06
摘要： PROBLEM TO BE SOLVED: To provide a variable capacitance element which operates even at high temperature.
SOLUTION: The variable capacitance element has a diamond semiconductor 2, a first metal electrode 3, a first insulating film 4, and a second metal electrode 5, formed on an upper side of a substrate 1, wherein the diamond semiconductor is formed of a high-density doped diamond semiconductor 22 of ≥2×10
20 cm
-3 in dopant density and a low-density doped diamond semiconductor 21 of ≤5×10
17 cm
-3 in dopant density in order from the substrate side, the high-density diamond semiconductor 22 and first metal electrode 3 are electrically connected to each other, and the first insulating film 4 is interposed between the low-density diamond semiconductor 21 and second metal electrode 5.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供甚至在高温下操作的可变电容元件。解决方案：可变电容元件具有金刚石半导体2，第一金属电极3，第一绝缘膜4和第二金属电极5，其形成在基板1的上侧，其中形成金刚石半导体的掺杂剂密度为≥2×10 20 -3 的高密度掺杂金刚石半导体22和≤5×10 < SP> 17 cm -3 从衬底侧开始，高密度金刚石半导体22和第一金属电极3彼此电连接，第一绝缘膜4介于低密度金刚石半导体21和第二金属电极5之间。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010135300A Reflecting anodic electrode for organic el display, and manufacturing method thereof 审中-公开
标题翻译：反射有机EL显示器的阳极电极及其制造方法
公开(公告)号：JP2010135300A
公开(公告)日：2010-06-17
申请号：JP2009183741
申请日：2009-08-06
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OCHI MOTOTAKA , GOTO YASUSHI , KISHI TOMOYA , KAWAKAMI NOBUYUKI
IPC分类号： H05B33/10 , H01L51/50 , H05B33/24 , H05B33/26
CPC分类号： H01L51/5218 , H01L27/3244 , H01L2251/5315
摘要： PROBLEM TO BE SOLVED: To provide a reflecting anodic electrode for organic EL displays which has such an Al alloy reflecting film that it attains a low contacting resistance with an oxide conductive film, and can achieve its excellent reflecting coefficient. SOLUTION: A manufacturing method of the reflecting anodic electrode for organic EL displays has a process for forming an Al alloy film containing Ni or Co of 0.1-2 atomic% on a substrate, a process for heat-processing the Al alloy film at a temperature not lower than 150°C in a vacuum or inert-gas atmosphere, and a process for forming then an oxide conductive film so as to be contacted with the Al alloy reflecting film directly. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供具有这样的Al合金反射膜的有机EL显示器的反射阳极电极，其与氧化物导电膜达到低接触电阻，并且可以实现其优异的反射系数。解决方案：用于有机EL显示器的反射阳极电极的制造方法具有在基板上形成含有0.1-2原子％的Ni或Co的Al合金膜的方法，用于对Al合金膜进行热处理的方法在真空或惰性气体气氛中在不低于150℃的温度下形成氧化物导电膜，以便直接与Al合金反射膜接触。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009016862A Source-drain electrode, thin film transistor substrate, method for manufacturing the same, and display device 审中-公开
标题翻译：漏极电极，薄膜晶体管基板，其制造方法和显示装置
公开(公告)号：JP2009016862A
公开(公告)日：2009-01-22
申请号：JP2008215568
申请日：2008-08-25
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , KUGIMIYA TOSHIHIRO , GOTO YASUSHI , FUKU KATSUFUMI , MIKI AYA
IPC分类号： H01L29/786 , G09F9/00 , G09F9/30 , H01L21/28 , H01L21/336 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a technology capable of exerting excellent TFT characteristics even if a lower barrier metal layer is omitted and directly and definitely connecting source-drain wires to a semiconductor layer of the TFT. SOLUTION: A source drain electrode 34 is composed of a nitrogen containing layer and a thin film of pure Al or Al alloy. The nitrogen in the nitrogen containing layer is coupled with Si in the semiconductor layer 33 of the thin film transistor, and a thin film of pure Al or Al alloy is connected to the semiconductor layer 33 of the thin film transistor through the nitrogen containing layer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供即使省略下阻挡金属层也能够施加优异的TFT特性的技术，并且将源极 - 漏极直接并且确实地连接到TFT的半导体层。源极漏电极34由含氮层和纯Al或Al合金薄膜构成。含氮层中的氮与薄膜晶体管的半导体层33中的Si耦合，纯Al或Al合金薄膜通过含氮层与薄膜晶体管的半导体层33连接。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009008770A Laminated structure and method for manufacturing the same 审中-公开
标题翻译：层压结构及其制造方法
公开(公告)号：JP2009008770A
公开(公告)日：2009-01-15
申请号：JP2007168278
申请日：2007-06-26
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： GOTO YASUSHI , OCHI MOTOTAKA , TAKETOMI YUICHI , KAWAKAMI NOBUYUKI
IPC分类号： G02F1/1343 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： G02F1/136286 , B32B2457/20 , C22C21/00 , G02F2001/136295
摘要： PROBLEM TO BE SOLVED: To provide a laminated structure and a method for manufacturing the same, in which an Al alloy is directly connected to an oxide transparent conductive film without increasing contact electrical resistance between the oxide transparent conductive film and the Al alloy film, the wiring resistance is reduced, and galvanic corrosion is prevented in an electrolytic solution such as a developer. SOLUTION: The method for manufacturing the laminated structure having the oxide transparent conductive film and the Al alloy film directly connected to each other is provided with: a first step to form the oxide transparent conductive film on a substrate; a second step to form the Al alloy film which contains an alloy component having ionization tendency less than that of aluminum on the oxide transparent conductive film; and a third step to heat the Al alloy film to a temperature equal to or more than a deposition temperature of an intermetallic compound composed of aluminum and the alloy component. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种层叠结构及其制造方法，其中Al合金直接连接到氧化物透明导电膜，而不增加氧化物透明导电膜和Al合金之间的接触电阻薄膜，布线电阻降低，并且在诸如显影剂的电解溶液中防止电镀腐蚀。解决方案：具有直接连接氧化物透明导电膜和Al合金膜的叠层结构体的制造方法具有：在基板上形成氧化物透明导电膜的第一工序; 在氧化物透明导电膜上形成含有电离倾向小于铝的合金成分的Al合金膜的第二工序; 以及将Al合金膜加热到由铝和合金成分构成的金属间化合物的沉积温度以上的温度的第3工序。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008122941A Reflection electrode and display device 有权
标题翻译：反射电极和显示装置
公开(公告)号：JP2008122941A
公开(公告)日：2008-05-29
申请号：JP2007268313
申请日：2007-10-15
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TACHIBANA TAKESHI , KAWAKAMI NOBUYUKI , GOTO YASUSHI
IPC分类号： G02F1/1343 , G02F1/1335 , G09F9/30
摘要： PROBLEM TO BE SOLVED: To provide a reflection electrode in which a metal layer constituting the reflection electrode is directly connected to an oxide conductive film constituting a transparent electrode not through a barrier metal layer, and which has high reflectance and low contact resistance even when being subjected to a low temperature heat treatment of about ≥100°C and ≤300°C, for example, and also has excellent heat resistance without causing any defects such as a hillock.
SOLUTION: The reflection electrode is composed of an Al-Ni alloy thin film including 0.1-2 atom% Ni, wherein the Al-Ni alloy thin film 2 is directly connected to the oxide conductive film 1.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种反射电极，其中构成反射电极的金属层不是通过阻挡金属层直接连接到构成透明电极的氧化物导电膜，并且具有高反射率和低接触电阻即使进行例如约≥100℃，≤300℃的低温热处理，也具有优异的耐热性，而不会产生诸如小丘等缺陷。解决方案：反射电极由包含0.1-2原子％Ni的Al-Ni合金薄膜组成，其中Al-Ni合金薄膜2直接连接到氧化物导电膜1.版权所有：（C）2008，JPO＆INPIT

9. 发明专利

JP2007284285A Diamond film and method for manufacturing the same 审中-公开
标题翻译：金刚石薄膜及其制造方法
公开(公告)号：JP2007284285A
公开(公告)日：2007-11-01
申请号：JP2006112729
申请日：2006-04-14
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KOBASHI KOJI , TACHIBANA TAKESHI , YOKOTA YOSHIHIRO , HAYASHI KAZUYUKI , KAWAKAMI NOBUYUKI , HAYASHI KIKUSABURO
IPC分类号： C30B29/04 , C23C16/27
摘要： PROBLEM TO BE SOLVED: To provide a highly oriented diamond film uniforming a crystal plane orientation in a surface and reducing the warp of the diamond film, and a method for manufacturing the same.
SOLUTION: The diamond film includes a primary diamond film formed by synthesizing, in a vapor phase, a (100) highly oriented film or a (100) single crystal diamond film on a substrate and thereafter removing the substrate, and a secondary diamond film grown on a face (back face) on which the substrate contacts the primary diamond film under the condition of (100) orientation growing, wherein the secondary diamond film is any one of a highly oriented film produced by orientation-growing a (100) crystal plane, a non-grain-boundary film oriented in (100) and a single crystal film oriented in (100). The situation is the same also in the case of a (111) highly oriented film.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供使表面中的晶面取向均匀化并降低金刚石膜的翘曲的高取向金刚石膜及其制造方法。解决方案：金刚石膜包括通过在气相中合成基板上的（100）高取向膜或（100）单晶金刚石膜，然后除去基板而形成的主金刚石膜，以及二次在（100）取向生长的条件下，基板与主金刚石膜接触的面（背面）上生长的金刚石膜，其中二次金刚石膜是通过取向生长a（100 ）晶面，在（100）中取向的非晶界膜和在（100）中取向的单晶膜。在（111）高取向电影的情况下也是如此。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007067453A Method for etching diamond 有权
标题翻译：蚀刻钻石的方法
公开(公告)号：JP2007067453A
公开(公告)日：2007-03-15
申请号：JP2006333655
申请日：2006-12-11
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , KINOSHITA TAKASHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for etching a carbon-based material, which does not require heating in particular, and keeps very excellent flatness and mask selection ratio, and can obtain a shape faithful to the shape of a mask and a high etching rate.
SOLUTION: While covering regions on a diamond except for the region to be etched with a mask made of a Si oxide, and applying to a negative electrode the high frequency potential of ≥500 V, preferably ≥1,000 V, with reference to a counter electrode or a reaction container, etching of the diamond is performed by exposing the diamond to a plasma generated from O
2 , Ar or a mixed gas of O
2 and Ar.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种不需要特别加热的碳基材料的蚀刻方法，并且保持非常优异的平坦度和掩模选择比，并且可以获得忠实于掩模形状的形状和高蚀刻速率。解决方案：除了用Si氧化物掩模蚀刻的区域外的金刚石覆盖区域，并且向负极施加≥500V，优选≥1000V的高频电位，参考对电极或反应容器，通过将金刚石暴露于由O 2 SB，Ar或O SB 2和/或SB 2的混合气体产生的等离子体，进行金刚石的蚀刻。版权所有（C）2007，JPO＆INPIT

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