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1. 发明授权

US08242020B2 Method for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US08242020B2
公开(公告)日：2012-08-14
申请号：US12547749
申请日：2009-08-26
申请人： Klaus Roettger , Gerhard Heier , Alexander Heilmaier
发明人： Klaus Roettger , Gerhard Heier , Alexander Heilmaier
IPC分类号： H01L21/302
CPC分类号： B24B37/042 , H01L21/02024
摘要： A method for producing a semiconductor wafer. The method includes placing the semiconductor wafer in a cutout in a carrier. Both sides of the semiconductor wafer are polished between an upper and a lower polishing plate with a polishing agent until the thickness of the center of the semiconductor wafer is less than the thickness of the carrier and from 10 μm to 30 μm of semiconductor wafer material is removed. The polishing agent contains 0.1 to 0.4% by weight of SiO2 and 0.1 to 0.9% by weight of an alkaline component.
摘要翻译：一种半导体晶片的制造方法。该方法包括将半导体晶片放置在载体中的切口中。半导体晶片的两面用抛光剂在上下抛光板之间进行抛光，直到半导体晶片的中心厚度小于载体的厚度为止，半导体晶片材料的10μm至30μm为删除。抛光剂含有0.1至0.4重量％的SiO 2和0.1至0.9重量％的碱性组分。

2. 发明申请

US20100055908A1 METHOD FOR PRODUCING A SEMICONDUCTOR WAFER 有权
标题翻译：生产半导体波形的方法
公开(公告)号：US20100055908A1
公开(公告)日：2010-03-04
申请号：US12547749
申请日：2009-08-26
申请人： Klaus Roettger , Gerhard Heier , Alexander Heilmaier
发明人： Klaus Roettger , Gerhard Heier , Alexander Heilmaier
IPC分类号： H01L21/306
CPC分类号： B24B37/042 , H01L21/02024
摘要： A method for producing a semiconductor wafer. The method includes placing the semiconductor wafer in a cutout in a carrier. Both sides of the semiconductor wafer are polished between an upper and a lower polishing plate with a polishing agent until the thickness of the center of the semiconductor wafer is less than the thickness of the carrier and from 10 μm to 30 μm of semiconductor wafer material is removed. The polishing agent contains 0.1 to 0.4% by weight of SiO2 and 0.1 to 0.9% by weight of an alkaline component.
摘要翻译：一种半导体晶片的制造方法。该方法包括将半导体晶片放置在载体中的切口中。半导体晶片的两面用抛光剂在上下抛光板之间进行抛光，直到半导体晶片的中心厚度小于载体的厚度为止，半导体晶片材料的10μm至30μm为删除。抛光剂含有0.1至0.4重量％的SiO 2和0.1至0.9重量％的碱性组分。

3. 发明授权

US06861360B2 Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers 有权
标题翻译：用于制造多个硅半导体晶片的双面抛光工艺
公开(公告)号：US06861360B2
公开(公告)日：2005-03-01
申请号：US10294846
申请日：2002-11-14
申请人： Guido Wenski , Thomas Altmann , Anton Huber , Alexander Heilmaier
发明人： Guido Wenski , Thomas Altmann , Anton Huber , Alexander Heilmaier
IPC分类号： B24B37/04 , B24B49/16 , C30B29/06 , C30B33/00 , H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/042 , B24B37/08 , B24B49/16
摘要： A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRmax of less than or equal to 0.13 μm, based on a surface grid of segments with a size of 26 mm×8 mm on the front surface, wherein the maximum local height deviation P/V(10×10)max of the front surface from an ideal plane is less than or equal to 70 nm, based on sliding subregions with dimensions of 10 mm×10 mm. There is also a process for producing a multiplicity of silicon semiconductor wafers by simultaneous double-side polishing between in each case one lower polishing plate and one upper polishing plate, which rotate, are parallel to one another and to which polishing cloth has been adhesively bonded, while a polishing agent, which contains abrasives or colloids, is being supplied, with at least 2 μm of silicon being removed, wherein a predetermined proportion of the semiconductor wafers is at least partially polished using a lower polishing pressure, and a further proportion of the semiconductor wafers is polished using a higher polishing pressure.
摘要翻译：具有大于或等于200mm的直径的硅半导体晶片和抛光的前表面和抛光后表面以及小于或等于0.13μm的最大局部平坦度值SFQRmax，基于具有尺寸为26mm×8mm的前表面，其中，从理想平面的前表面的最大局部高度偏差P / V（10×10）max小于或等于70nm，基于尺寸为10mm×10mm的滑动子区域。还有一种通过在每种情况下同时进行双面抛光来生产多个硅半导体晶片的方法，其中一个下抛光板和一个上抛光板相互平行，并且抛光布已经被粘合到该抛光板上同时提供含有研磨剂或胶体的抛光剂，除去至少2个微米的硅，其中使用较低的抛光压力至少部分地抛光半导体晶片的预定比例，另外一部分使用更高的抛光压力来抛光半导体晶片。

4. 发明申请

US20080099006A1 METHOD FOR SIMULTANEOUSLY SLICING AT LEAST TWO CYLINDRICAL WORKPIECES INTO A MULTIPLICITY OF WAFERS 有权
公开(公告)号：US20080099006A1
公开(公告)日：2008-05-01
申请号：US11923722
申请日：2007-10-25
申请人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
发明人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
IPC分类号： B23D57/00
CPC分类号： B28D5/042
摘要： Slicing multiple cylindrical workpieces into wafers by a multi wire saw with a gang length LG, is performed by: a) selecting a number n≧2 of workpieces from a stock of workpieces with different lengths, satisfying the inequality L G ≥ ( n - 1 ) · A min + ∑ i = 1 n   L 1 ( 1 ) and making right-hand side of the inequality as large as possible, where Li with i=1 . . . n are for the lengths of the workpieces and Amin is a predefined minimum spacing, b) fixing the n workpieces successively in the longitudinal direction on a mounting plate while maintaining a spacing A≧Amin therebetween such that the relationship L G ≥ ( n - 1 ) · A + ∑ i = 1 n   L i ( 2 ) is satisfied, c) clamping mounting plates workpieces in a multi wire saw, and d) slicing the n workpieces perpendicularly to their longitudinal axis by means of the multi wire saw. Preferably, the wafer stacks are separated from one another by separating pieces after slicing, and at the same time are laterally supported.

5. 发明授权

US07108583B1 Method for removing material from a semiconductor wafer 有权
标题翻译：从半导体晶片去除材料的方法
公开(公告)号：US07108583B1
公开(公告)日：2006-09-19
申请号：US11377946
申请日：2006-03-16
申请人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
发明人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
IPC分类号： B24B13/00
CPC分类号： B24B37/042
摘要： The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03–0.5 μm during one revolution of the semiconductor wafer.
摘要翻译：本发明涉及通过机械加工从半导体晶片去除材料的方法，其中保持在晶片保持器上的半导体晶片和与其相对的研磨轮彼此独立地旋转，所述砂轮相对于半导体晶片并且以使得半导体晶片的轴向中心进入砂轮的工作范围的方式定位，砂轮以进给速度沿半导体晶片的方向移动，结果是研磨轮和半导体晶片彼此前进，同时半导体晶片和砂轮围绕平行轴线旋转，使得半导体晶片的表面被研磨，其中砂轮在定义量的材料之后以返回速率返回已经被除去，其中砂轮和半导体晶片相对于彼此前进0.03-0的距离。在半导体晶片的一圈内的5um。

6. 发明授权

US07766724B2 Method for simultaneously slicing at least two cylindrical workpieces into a multiplicity of wafers 有权
标题翻译：用于将至少两个圆柱形工件同时切割成多个晶片的方法
公开(公告)号：US07766724B2
公开(公告)日：2010-08-03
申请号：US11923722
申请日：2007-10-25
申请人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
发明人： Anton Huber , Alexander Heilmaier , Clemens Radspieler , Helmut Seehofer
IPC分类号： B24B49/00 , B24D1/06
CPC分类号： B28D5/042
摘要： Slicing multiple cylindrical workpieces into wafers by a multi wire saw with a gang length LG, is performed by: a) selecting a number n≧2 of workpieces from a stock of workpieces with different lengths, satisfying the inequality L G ≥ ( n - 1 ) · A min + ∑ i = 1 n ⁢ ⁢ L 1 ( 1 ) and making right-hand side of the inequality as large as possible, where Li with i=1 . . . n are for the lengths of the workpieces and Amin is a predefined minimum spacing, b) fixing the n workpieces successively in the longitudinal direction on a mounting plate while maintaining a spacing A≧Amin therebetween such that the relationship L G ≥ ( n - 1 ) · A + ∑ i = 1 n ⁢ ⁢ L i ( 2 ) is satisfied, c) clamping mounting plates workpieces in a multi wire saw, and d) slicing the n workpieces perpendicularly to their longitudinal axis by means of the multi wire saw. Preferably, the wafer stacks are separated from one another by separating pieces after slicing, and at the same time are laterally supported.
摘要翻译：通过以下方式执行多个圆柱形工件进入晶圆：通过以下步骤进行：a）从不同长度的工件库存中选择n≥2个工件，满足不等式LG≥（n-1） ·A min +Σi = 1 n⁢L 1（1），使不等式的右边尽可能大，其中i i = 1。。。 n为工件的长度，Amin为预定的最小间距，b）将n个工件在长度方向上连续固定在安装板上，同时保持间距A≥Am，使得LG≥（n-1） ·A +Σi = 1 n≠L i（2），c）将多个线锯中的工件夹紧，d）通过多线锯将n个工件垂直于其纵向轴线切割。优选地，通过在切片之后分离片而将晶片堆叠彼此分离，并且同时被横向支撑。

7. 发明申请

US20060211338A1 METHOD FOR REMOVING MATERIAL FROM A SEMICONDUCTOR WAFER 有权
标题翻译：从半导体滤波器中去除材料的方法
公开(公告)号：US20060211338A1
公开(公告)日：2006-09-21
申请号：US11377946
申请日：2006-03-16
申请人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
发明人： Alexander Heilmaier , Robert Drexler , Anton Huber , Robert Weiss
IPC分类号： B24B51/00
CPC分类号： B24B37/042
摘要： The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03-0.5 μm during one revolution of the semiconductor wafer.
摘要翻译：本发明涉及通过机械加工从半导体晶片去除材料的方法，其中保持在晶片保持器上的半导体晶片和与其相对的研磨轮彼此独立地旋转，所述砂轮相对于半导体晶片并且以这样的方式定位，使得半导体晶片的轴向中心进入砂轮的工作范围，砂轮以进给速度沿半导体晶片的方向移动，结果是研磨轮和半导体晶片彼此前进，同时半导体晶片和砂轮围绕平行轴线旋转，使得半导体晶片的表面被研磨，其中砂轮在定义量的材料之后以返回速率返回已经被除去，其中砂轮和半导体晶片相对于彼此前进0.03-0的距离。在半导体晶片的一圈内的5um。

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