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1. 发明授权

US06171905B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06171905B2
公开(公告)日：2001-01-09
申请号：US09192537
申请日：1998-11-17
申请人： Kiyoyuki Morita , Kiyoshi Morimoto , Koichiro Yuki , Kiyoshi Araki
发明人： Kiyoyuki Morita , Kiyoshi Morimoto , Koichiro Yuki , Kiyoshi Araki
IPC分类号： H01L21336
CPC分类号： H01L21/76264 , H01L21/76267 , H01L21/76281 , H01L21/84 , H01L27/12 , H01L27/1203 , H01L29/7606 , H01L29/882
摘要： The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO2 type quantum device can be manufactured with ease at a low cost.
摘要翻译：本发明提供一种半导体器件，其具有各种功能，例如双稳态存储器和逻辑电路，其中在公共衬底上形成有MOS半导体元件，谐振隧道二极管，热电子晶体管等。在SOI衬底上形成由隔离氧化膜包围的n型Si层和p型Si层。形成掩模氧化膜和栅极氧化膜，并且通过使用掩模氧化膜作为掩模对n型Si层进行结晶各向异性蚀刻，以将n型Si层改变为薄Si板。在该n型Si层的侧面上形成第一和第二隧道氧化物膜之后，共用隧道二极管的第一和第二多晶硅电极和用作MOS半导体元件的栅电极的多晶硅电极由共同的多晶硅膜。因此，可以容易地以低成本制造Si / SiO 2型量子器件。

2. 发明授权

US6091077A MIS SOI semiconductor device with RTD and/or HET 失效
标题翻译：具有RTD和/或HET的MIS SOI半导体器件
公开(公告)号：US6091077A
公开(公告)日：2000-07-18
申请号：US955267
申请日：1997-10-21
申请人： Kiyoyuki Morita , Kiyoshi Morimoto , Koichiro Yuki , Kiyoshi Araki
发明人： Kiyoyuki Morita , Kiyoshi Morimoto , Koichiro Yuki , Kiyoshi Araki
IPC分类号： H01L21/762 , H01L21/84 , H01L27/12 , H01L29/76 , H01L29/88 , H01L29/06
CPC分类号： H01L21/76264 , H01L21/84 , H01L27/12 , H01L27/1203 , H01L29/7606 , H01L29/882 , H01L21/76267 , H01L21/76281
摘要： The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO.sub.2 type quantum device can be manufactured with ease at a low cost.
摘要翻译：本发明提供一种半导体器件，其具有各种功能，例如双稳态存储器和逻辑电路，其中在公共衬底上形成有MOS半导体元件，谐振隧道二极管，热电子晶体管等。在SOI衬底上形成由隔离氧化膜包围的n型Si层和p型Si层。形成掩模氧化膜和栅极氧化膜，并且通过使用掩模氧化膜作为掩模对n型Si层进行结晶各向异性蚀刻，以将n型Si层改变为薄Si板。在该n型Si层的侧面上形成第一和第二隧道氧化物膜之后，共用隧道二极管的第一和第二多晶硅电极和用作MOS半导体元件的栅电极的多晶硅电极由共同的多晶硅膜。因此，可以容易地以低成本制造Si / SiO 2型量子器件。

3. 发明授权

US06342716B1 Semiconductor device having dot elements as floating gate 失效
标题翻译：具有点元素作为浮动栅极的半导体器件
公开(公告)号：US06342716B1
公开(公告)日：2002-01-29
申请号：US09320695
申请日：1999-05-27
申请人： Kiyoyuki Morita , Kiyoshi Morimoto , Kiyoshi Araki , Koichiro Yuki , Kazuyasu Adachi , Masayuki Endo , Ichiro Yamashita
发明人： Kiyoyuki Morita , Kiyoshi Morimoto , Kiyoshi Araki , Koichiro Yuki , Kazuyasu Adachi , Masayuki Endo , Ichiro Yamashita
IPC分类号： H01L29788
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C11/5671 , G11C13/0019 , G11C2216/08 , H01L21/28273 , H01L21/288 , H01L21/768 , H01L29/7883 , Y10S438/962
摘要： A semiconductor device as a nonvolatile memory comprises dot elements which are formed out of the semiconductor or conductor fine particles and function as a floating gate. The dot elements are asymmetrically formed to a control gate and may be formed in a sidewall insulating film formed over the side face of the control gate or a select gate. When inclined or stepped portions having level differences are formed in a semiconductor substrate, the dot elements are formed on a specified portion of the inclined or stepped portions.
摘要翻译：作为非易失性存储器的半导体器件包括由半导体或导体细颗粒形成并作为浮栅的功能的点元件。点元件与控制栅极不对称地形成，并且可以形成在形成在控制栅极或选择栅极的侧面上的侧壁绝缘膜中。当在半导体衬底中形成具有电平差的倾斜或阶梯部分时，点元素形成在倾斜或阶梯部分的特定部分上。

4. 发明授权

US5972744A Quantum effect device, method of manufacturing the same 失效
标题翻译：量子效应器件，制造方法
公开(公告)号：US5972744A
公开(公告)日：1999-10-26
申请号：US37016
申请日：1998-03-09
申请人： Kiyoshi Morimoto , Kiyoyuki Morita , Kiyoshi Araki , Yoshihiko Hirai , Koichiro Yuki
发明人： Kiyoshi Morimoto , Kiyoyuki Morita , Kiyoshi Araki , Yoshihiko Hirai , Koichiro Yuki
IPC分类号： H01L21/335 , H01L29/775 , H01L21/70
CPC分类号： H01L29/775 , B82Y10/00 , H01L29/66439
摘要： A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.
摘要翻译：硅岛部分形成在量子线中，以夹在氧化硅膜的一对隧道势垒部分之间。在硅岛部分的一侧，用于电位控制的栅电极设置有介于其间的氧化硅膜的栅极绝缘膜。在硅岛部分的另一侧，用于电位控制的控制电极设置有隔着氧化硅膜的绝缘膜。每个隧道势垒部分具有量子线收缩结构，该量子线收缩结构通过使用原子力显微镜等将形成为场增强氧化物膜的量子线，即其表面氧化成基本上中心部分在其部分。

5. 发明授权

US06303516B1 Method for forming dot element 失效
标题翻译：形成点元素的方法
公开(公告)号：US06303516B1
公开(公告)日：2001-10-16
申请号：US09208753
申请日：1998-12-10
申请人： Kiyoyuki Morita , Kiyoshi Morimoto , Kiyoshi Araki , Koichiro Yuki , Kazuyasu Adachi , Masayuki Endo , Ichiro Yamashita
发明人： Kiyoyuki Morita , Kiyoshi Morimoto , Kiyoshi Araki , Koichiro Yuki , Kazuyasu Adachi , Masayuki Endo , Ichiro Yamashita
IPC分类号： H01L2146
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C11/5671 , G11C13/0019 , G11C2216/08 , H01L21/28273 , H01L21/288 , H01L21/768 , H01L29/7883 , Y10S438/962
摘要： A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with the ultraviolet rays. Next, when the p-type Si substrate is immersed in a solution containing Au fine particles that have been combined with a Rat IgG antigen, the Rat IgG antigen is selectively combined with the Rat IgG antibody film. As a result, Au fine particles, combined with the Rat IgG antigen, are fixed on the Rat IgG antibody film. Thereafter, the p-type Si substrate is placed within oxygen plasma for 20 minutes, thereby removing the Rat IgG antibody film, the deactivated Rat IgG antibody film and the Rat IgG antigen. Consequently, dot elements can be formed at desired positions on the p-type Si substrate. If these dot elements are used for the floating gate of a semiconductor memory device, then the device has a structure suitable for miniaturization.
摘要翻译：在p型Si衬底上形成的大鼠IgG抗体膜被紫外线选择性照射，除了用紫外线去活化的区域外，还剩下部分IgG抗体。接下来，当将p型Si衬底浸入含有与大鼠IgG抗原组合的Au微粒的溶液中时，将大鼠IgG抗原与大鼠IgG抗体膜选择性组合。结果，将Au细粒与大鼠IgG抗原组合，固定在大鼠IgG抗体膜上。此后，将p型Si衬底置于氧等离子体中20分钟，从而除去大鼠IgG抗体膜，失活的大鼠IgG抗体膜和大鼠IgG抗原。因此，可以在p型Si衬底上的期望位置形成点元件。如果这些点元件用于半导体存储器件的浮动栅极，则该器件具有适于小型化的结构。

6. 发明授权

US07170186B2 Laminated radiation member, power semiconductor apparatus, and method for producing the same 有权
标题翻译：层叠辐射构件，功率半导体装置及其制造方法
公开(公告)号：US07170186B2
公开(公告)日：2007-01-30
申请号：US11179216
申请日：2005-07-12
申请人： Kiyoshi Araki , Masahiro Kida , Takahiro Ishikawa , Yuki Bessyo , Takuma Makino
发明人： Kiyoshi Araki , Masahiro Kida , Takahiro Ishikawa , Yuki Bessyo , Takuma Makino
IPC分类号： H01L23/00
CPC分类号： H01L24/32 , C04B37/026 , C04B2235/3206 , C04B2235/3225 , C04B2235/3873 , C04B2235/616 , C04B2235/6565 , C04B2235/9607 , C04B2237/064 , C04B2237/083 , C04B2237/121 , C04B2237/122 , C04B2237/125 , C04B2237/127 , C04B2237/128 , C04B2237/365 , C04B2237/366 , C04B2237/368 , C04B2237/407 , C04B2237/56 , C04B2237/704 , C04B2237/706 , C04B2237/72 , C23C4/02 , C23C4/08 , C23C6/00 , C23C24/10 , C23C24/106 , H01L23/3733 , H01L23/3735 , H01L23/3736 , H01L23/473 , H01L24/45 , H01L24/48 , H01L2224/451 , H01L2224/45124 , H01L2224/48091 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/13055 , H01L2924/15787 , H01L2924/19107 , H01L2924/351 , Y10T428/24917 , Y10T428/24926 , Y10T428/252 , H01L2924/00014 , H01L2924/01004 , H01L2924/01022 , H01L2924/3512 , H01L2924/00 , H01L2924/00015
摘要： A laminated radiation member includes a radiation plate, an insulation substrate bonded to the upper surface of the radiation plate and an electrode provided on the upper surface of the insulation substrate. The laminated radiation member is made by a method including the steps of surface treating a bonding surface of the radiation plate and/or the insulation substrate, interposing ceramic particles surface treated to assure wettability with a hard solder or a metal between the radiation plate and the insulation substrate, disposing a hard solder above and/or below the ceramic particles, heating the hard solder to a temperature higher than the melting point of the solder, penetrating the molten hard solder into spaces between the ceramic particles to react the ceramic particles with the solder to produce a metal base composite material, and bonding the radiation plate and the insulation substrate with the metal base composite material.
摘要翻译：叠层辐射构件包括辐射板，结合到辐射板的上表面的绝缘基板和设置在绝缘基板的上表面上的电极。叠层辐射构件通过以下方法制造：包括以下步骤：对辐射板和/或绝缘基板的接合表面进行表面处理，将处理的陶瓷颗粒插入表面，以确保在辐射板和辐射板之间的硬焊料或金属的润湿性绝缘基板，在陶瓷颗粒上方和/或下方设置硬焊料，将硬焊料加热到高于焊料熔点的温度，将熔融的硬焊料穿入陶瓷颗粒之间的空间，使陶瓷颗粒与焊料以制造金属基复合材料，并且用金属基复合材料将辐射板和绝缘基板接合。

7. 发明授权

US06391812B1 Silicon nitride sintered body and method of producing the same 有权
标题翻译：氮化硅烧结体及其制造方法
公开(公告)号：US06391812B1
公开(公告)日：2002-05-21
申请号：US09579970
申请日：2000-05-26
申请人： Kiyoshi Araki , Katsuhiro Inoue
发明人： Kiyoshi Araki , Katsuhiro Inoue
IPC分类号： C04B35587
CPC分类号： C04B35/5935 , H01L23/15 , H01L2924/0002 , H01L2924/09701 , H05K1/0306 , H01L2924/00
摘要： A method of producing the silicon nitride sintered body includes the steps of forming a compact of molding materials including silicon nitride powder, a Mg component and a sintering aid, and sintering the molding materials at 1,800 to 2,000° C. under a nitrogen atmosphere. The materials at least include an oxide of Mg in a range of 0.3 to 10 wt. %. A constant temperature is kept for at least 0.5 hours in a temperature range of 1,400 to 1,700° C. before the temperature is increased to the sintering temperature. A silicon nitride body having high thermal conductivity and excellent electrical insulation properties at high temperature can thus be provided.
摘要翻译：制造氮化硅烧结体的方法包括以下步骤：形成包含氮化硅粉末，Mg组分和烧结助剂的成型材料的压坯，并在氮气气氛下在1,800至2,000℃下烧结成型材料。这些材料至少包括0.3至10重量％的Mg的氧化物。％。在温度升至烧结温度之前，在1400〜1700℃的温度范围内将恒温保持至少0.5小时。因此可以提供具有高导热性和高温下优异的电绝缘性能的氮化硅体。

8. 发明授权

US6139983A Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same 失效
标题翻译：耐腐蚀构件，晶片支撑构件及其制造方法
公开(公告)号：US6139983A
公开(公告)日：2000-10-31
申请号：US102582
申请日：1998-06-23
申请人： Tsuneaki Ohashi , Kiyoshi Araki , Sadanori Shimura , Yuji Katsuda
发明人： Tsuneaki Ohashi , Kiyoshi Araki , Sadanori Shimura , Yuji Katsuda
IPC分类号： C04B41/87 , C04B41/50 , C04B41/52 , C04B41/85 , C04B41/89 , C23C8/36 , C23C16/458 , H01L21/205 , H01L21/302 , H01L21/3065 , C04B41/00
CPC分类号： C04B41/009 , C04B41/5018 , C04B41/52 , C04B41/85 , C04B41/89 , C23C16/458 , Y10S206/832 , Y10S428/901 , Y10T428/265
摘要： This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.
摘要翻译：本发明涉及一种具有耐卤素腐蚀性气体的等离子体的耐腐蚀构件，该耐腐蚀构件包括主体和形成在主体表面上并含有选自至少一种元素的氟化物的耐腐蚀层由稀土元素和碱土元素组成。

9. 发明授权

US5462821A Gallium based active material for the negative electrode, a negative electrode using the same, and batteries using said negative electrode 失效
标题翻译：用于负极的镓基活性材料，使用其的负极和使用所述负极的电池
公开(公告)号：US5462821A
公开(公告)日：1995-10-31
申请号：US340725
申请日：1994-11-16
申请人： Takashi Onoue , Kiyoshi Araki , Noriya Ishida , Toshiya Kitamura , Yasuhiko Niitsu , Makiko Yanagisawa , Ryo Sakamoto , Fumihiro Sato
发明人： Takashi Onoue , Kiyoshi Araki , Noriya Ishida , Toshiya Kitamura , Yasuhiko Niitsu , Makiko Yanagisawa , Ryo Sakamoto , Fumihiro Sato
IPC分类号： H01M4/02 , H01M4/38 , H01M4/48 , H01M6/04 , H01M6/10 , H01M10/24 , H01M10/26 , H01M12/06 , H01M4/58 , G01N27/26
CPC分类号： H01M10/24 , H01M10/26 , H01M12/06 , H01M4/38 , H01M6/04 , H01M2004/027 , H01M2300/0014 , H01M4/48 , H01M6/10
摘要： A novel primary or secondary battery whose active material for the negative electrode is composed of metallic gallium, gallium alloys or gallium oxide has first come into the world.Gallium has an electrochemical equivalent of 23.24, which is smaller than those of zinc (32.70) and cadmium (56.21). This indicates that when used as an active material for the negative electrode in batteries, gallium has larger capacity per unit mass than zinc and cadmium by respective factors of ca. 1.4 and 2.4. The potential of the reaction; Ga+6OH.sup.- =GaO.sub.3.sup.3- +3H.sub.2 O+3e.sup.- is obviously less noble than the voltage of hydrogen evolution and this means that a high-potential battery can be made. Due to the high hydrogen overvoltage of gallium, gallium ions in the solution can be precipitated as metallic gallium by electrodeposition. As a further advantage, no dendrite formation occurs during the electrodeposition unlike in the case of zinc. The high hydrogen overvoltage also contributes to the production of a battery that undergoes only limited self-discharge. What is more, gallium which has no toxicity presents few environmental problems.
摘要翻译：一种新型的一次或二次电池，其负极活性物质由金属镓，镓合金或氧化镓组成，已经进入世界。镓的电化学当量为23.24，小于锌（32.70）和镉（56.21）的电化学当量。这表明，当用作电池中的负极的活性材料时，镓的每单位质量的量比锌和镉的相应因素大。 1.4和2.4。反应的潜力; Ga + 6OH- = GaO33- + 3H2O + 3e-明显低于氢析出电压的高度，这意味着可以制造高电位电池。由于镓的高氢过电压，溶液中的镓离子可以通过电沉积作为金属镓沉淀。作为另外的优点，在电沉积期间不发生枝晶形成，这与锌的情况不同。高氢过电压也有助于生产仅经受有限自放电的电池。而且，没有毒性的镓会带来很少的环境问题。

10. 发明申请

US20130043186A1 METHOD FOR SEPARATING LIQUID MIXTURE, AND DEVICE FOR SEPARATING LIQUID MIXTURE 审中-公开
标题翻译：用于分离液体混合物的方法和用于分离液体混合物的装置
公开(公告)号：US20130043186A1
公开(公告)日：2013-02-21
申请号：US13634379
申请日：2009-11-06
申请人： Kiyoshi Araki , Masaaki Kawai , Shigeharu Hashimoto
发明人： Kiyoshi Araki , Masaaki Kawai , Shigeharu Hashimoto
IPC分类号： B01D63/00
CPC分类号： B01D61/362 , B01D63/066 , B01D67/0067 , B01D2325/04 , C10G31/11
摘要： There are disclosed a method for separating a liquid mixture in which a permeation performance enhances, and a composition of the liquid mixture containing a hydrocarbon liquid and an alcohol liquid at supply and a composition after membrane permeation are changed by a separating operation, and a device for separating a liquid mixture. The liquid mixture containing the hydrocarbon liquid and the alcohol liquid is used as a supply mixture liquid, and at least part of the supply mixture liquid is, in a liquid state, brought into contact with a membrane supply side of a separation membrane, and discharged in a vapor state through a membrane permeation side of the separation membrane, whereby a composition of a mixture vapor which is balanced with the supply mixture liquid becomes different from a composition of a vapor on the membrane permeation side.
摘要翻译：公开了一种分离渗透性能提高的液体混合物的方法，通过分离操作改变在供给时含有烃液体和醇液体的液体混合物和膜渗透后的组成的组成，用于分离液体混合物。将含有烃液体和醇液体的液体混合物用作供给混合液体，至少部分供液混合液体处于液态，与分离膜的膜供给侧接触并排出在蒸气状态下通过分离膜的膜渗透侧，由此与供给混合液平衡的混合蒸气的组成变得与膜透过侧的蒸气的组成不同。

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