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    • 1. 发明授权
    • Thin film magnetic head having very narrow track width and manufacturing method for the same
    • 具有非常窄轨道宽度的薄膜磁头及其制造方法
    • US06466403B1
    • 2002-10-15
    • US09532750
    • 2000-03-22
    • Kiyoshi SatoToshihiro KuriyamaToshinori Watanabe
    • Kiyoshi SatoToshihiro KuriyamaToshinori Watanabe
    • G11B5147
    • G11B5/3967G11B5/3116G11B5/313
    • The present invention provides a thin film magnetic head having a recording track width of 1 &mgr;m or less, and a method for manufacturing the thin film magnetic head having a recording track width of 1 &mgr;m or less. In the thin film magnetic head, an upper core layer and a lower core layer extend from a back region toward a magnetic pole tip region, and are exposed at a medium opposing surface, and a gap layer is provided, in the magnetic pole tip region, between the upper core layer and the lower core layer. An insulation layer is deposited on the lower core layer, and a groove that extends from the medium opposing surface toward the back region is provided in the magnetic pole tip region of the insulation layer. A lower magnetic pole layer, the gap layer, and an upper magnetic pole layer are deposited in the groove. The lower magnetic pole layer is joined to the lower core layer, while the upper magnetic pole layer is joined to the upper core layer.
    • 本发明提供一种具有1um或更小的记录磁道宽度的薄膜磁头,以及一种具有1μm或更小的记录磁道宽度的薄膜磁头的制造方法。 在薄膜磁头中,上芯层和下芯层从背部区域朝向磁极尖端区域延伸,并且在介质相对表面处露出,并且在磁极尖端区域中设置间隙层 ,在上芯层和下芯层之间。 绝缘层沉积在下芯层上,并且在绝缘层的磁极尖端区域中设置从介质相对表面朝向后部区域延伸的槽。 凹槽中沉积下磁极层,间隙层和上磁极层。 下磁极层接合到下芯层,而上磁极层与上芯层接合。
    • 3. 发明授权
    • Magnetoresistive sensor and its manufacturing method
    • 磁阻传感器及其制造方法
    • US06201465B1
    • 2001-03-13
    • US09432456
    • 1999-11-02
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • H01L4300
    • B82Y25/00B82Y10/00G01R33/093G11B5/3116G11B5/3903G11B5/3932G11B2005/3996Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49052
    • A magnetoresistive sensor is fabricated as follows. First of all, first antiferromagnetic layers are created on the upper surfaces on both sides of a lower-gap layer, sandwiching a track width on the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another in the order the layers are enumerated. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
    • 如下制造磁阻传感器。 首先,在下间隙层的两侧的上表面上形成第一反铁磁性层,在下间隙层的上表面夹着轨道宽度。 然后,依次层叠第一反铁磁层上的自由磁性层,非磁性导电层,钉扎磁性层和第二反铁磁性层,并且沿轨道宽度的一部分依次层叠。 由于在第一反铁磁层之后产生自由磁性层,所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时,磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态,所以可降低Barkhausen噪声的量。
    • 4. 发明授权
    • Magnetoresistive sensor manufacturing method
    • 磁阻传感器制造方法
    • US5972420A
    • 1999-10-26
    • US918643
    • 1997-08-22
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • G11B5/31G01R33/09G11B5/39H01L43/08B05D5/12
    • B82Y25/00B82Y10/00G01R33/093G11B5/3903G11B5/3932G11B2005/3996G11B5/3116Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49052
    • A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer, the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
    • 通过在下间隙层的上表面上产生第一反铁磁层制造的磁阻传感器,所述反铁磁层具有由下间隙层的上表面形成的轨道宽度分开的第一和第二暴露部分。 然后,将自由磁性层,非磁性导电层,钉扎磁性层和第二反铁磁层层叠在第一反铁磁性层上,并在轨道宽度上一个接一个地堆叠。 由于在第一反铁磁层之后产生自由磁性层,所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时,磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态,所以可降低Barkhausen噪声的量。
    • 6. 发明授权
    • Thin-film magnetic head and production method thereof
    • 薄膜磁头及其制造方法
    • US06307722B1
    • 2001-10-23
    • US09237547
    • 1999-01-26
    • Kiyoshi SatoYoshihiko KakiharaMasamichi SaitoToshihiro KuriyamaToshinori Watanabe
    • Kiyoshi SatoYoshihiko KakiharaMasamichi SaitoToshihiro KuriyamaToshinori Watanabe
    • G11B5127
    • B82Y25/00B82Y10/00G11B5/3903G11B5/3932G11B2005/3996Y10T29/49044Y10T29/49046
    • A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
    • 在非磁性材料层上形成纵向偏置层和电极层。 通过蚀刻技术部分地去除纵向偏置层和电极层,使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。 此外,由底部到顶部构成磁阻效应层,非磁性层和横向偏置层的三层膜,或者由自由磁性层,非磁性层 在上述结构上形成固定磁性层和偏置层。 然后通过蚀刻技术部分去除三层膜或自旋阀膜,使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。 三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。 所得到的三层膜或自旋阀膜具有优异的磁检测特性。 此外,纵向偏置层与磁阻效应层具有良好的磁耦合。
    • 7. 发明授权
    • Magnetoresisitive sensor and manufacturing method therefor
    • 磁电传感器及其制造方法
    • US06198378B1
    • 2001-03-06
    • US08707544
    • 1996-09-04
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • H01L4300
    • B82Y25/00B82Y10/00G01R33/093G11B5/3116G11B5/3903G11B5/3932G11B2005/3996Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49052
    • A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer, the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
    • 通过在下间隙层的上表面上产生第一反铁磁层制造的磁阻传感器,反铁磁层具有由下间隙层的上表面形成的轨道宽度分隔的第一和第二暴露部分。 然后,将自由磁性层,非磁性导电层,钉扎磁性层和第二反铁磁层层叠在第一反铁磁性层上,并在轨道宽度上一个接一个地堆叠。 由于在第一反铁磁层之后产生自由磁性层,所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时,磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态,所以可降低Barkhausen噪声的量。
    • 9. 发明授权
    • Method for producing a thin film magnetic head
    • 薄膜磁头的制造方法
    • US5992004A
    • 1999-11-30
    • US833405
    • 1997-04-04
    • Kiyoshi SatoYoshihiko KakiharaMasamichi SaitoToshihiro KuriyamaToshinori Watanabe
    • Kiyoshi SatoYoshihiko KakiharaMasamichi SaitoToshihiro KuriyamaToshinori Watanabe
    • G11B5/39
    • B82Y25/00B82Y10/00G11B5/3903G11B5/3932G11B2005/3996Y10T29/49044Y10T29/49046
    • A longitudinal bias layer and an electrode layer are formed on a non-magnetic material layer. The longitudinal bias layer and the electrode layer are partially removed by an etching technique so that a narrow gap defining the track width Tw is formed in the longitudinal bias layer and the electrode layer. Furthermore, a three-layer film consisting of, from bottom to top, a magnetoresistance effect layer, a non-magnetic layer, and a transverse bias layer, or otherwise a spin valve film consisting of a free magnetic layer, a non-magnetic layer, a fixed magnetic layer and a bias layer is formed on the above structure. The three-layer film or the spin valve film is then partially removed by an etching technique so that the three-layer film or the spin valve film remains only in the above-described narrow gap formed in the longitudinal bias layer and the electrode layer. The shape of the side walls of the three-layer film or the spin valve film is precisely determined by the side walls of the longitudinal bias layer and the electrode layer. The resultant three-layer film or the spin valve film exhibits excellent magnetic detection characteristics. Furthermore, the longitudinal bias layer has good magnetic coupling with the magnetoresistance effect layer.
    • 在非磁性材料层上形成纵向偏置层和电极层。 通过蚀刻技术部分地去除纵向偏置层和电极层,使得在纵向偏置层和电极层中形成限定轨道宽度Tw的窄间隙。 此外,由底部到顶部构成磁阻效应层,非磁性层和横向偏置层的三层膜,或者由自由磁性层,非磁性层 在上述结构上形成固定磁性层和偏置层。 然后通过蚀刻技术部分去除三层膜或自旋阀膜,使得三层膜或自旋阀膜仅保留在形成在纵向偏置层和电极层中的上述窄间隙中。 三层膜或自旋阀膜的侧壁的形状由纵向偏置层和电极层的侧壁精确地确定。 所得到的三层膜或自旋阀膜具有优异的磁检测特性。 此外,纵向偏置层与磁阻效应层具有良好的磁耦合。