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    • 1. 发明授权
    • Semiconductor device, method of manufacturing the same, and method of designing the same
    • 半导体装置及其制造方法及其设计方法
    • US07344925B2
    • 2008-03-18
    • US11064820
    • 2005-02-25
    • Kiyoshi KatoToshihiko SaitoAtsuo IsobeToru TakayamaJunya MaruyamaYuugo GotoYumiko Ohno
    • Kiyoshi KatoToshihiko SaitoAtsuo IsobeToru TakayamaJunya MaruyamaYuugo GotoYumiko Ohno
    • H01L21/00H01L21/84H01L21/336H01L21/8234H01L21/331
    • H01L29/78696H01L27/12H01L27/1281H01L29/66757H01L29/78675H01L2221/68368
    • An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
    • 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法,可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件,每个单元具有多个具有相同沟道长度方向的TFT,其中多个单元沿着沟道长度方向形成多个列,其中岛状半导体 通过在沟道长度方向上行进的激光,使多个TFT中的每一个的膜结晶,其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起,并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。
    • 3. 发明授权
    • Semiconductor device, method of manufacturing the same, and method of designing the same
    • 半导体装置及其制造方法及其设计方法
    • US07541228B2
    • 2009-06-02
    • US12003983
    • 2008-01-04
    • Kiyoshi KatoToshihiko SaitoAtsuo IsobeToru TakayamaJunya MaruyamaYuugo GotoYumiko Ohno
    • Kiyoshi KatoToshihiko SaitoAtsuo IsobeToru TakayamaJunya MaruyamaYuugo GotoYumiko Ohno
    • H01L21/00H01L21/84H01L21/336H01L21/8234H01L21/302
    • H01L29/78696H01L27/12H01L27/1281H01L29/66757H01L29/78675H01L2221/68368
    • An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
    • 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法,可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件,每个单元具有多个具有相同沟道长度方向的TFT,其中多个单元沿着沟道长度方向形成多个列,其中岛状半导体 通过在沟道长度方向上行进的激光,使多个TFT中的每一个的膜结晶,其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起,并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。