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1. 发明授权

US07344925B2 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US07344925B2
公开(公告)日：2008-03-18
申请号：US11064820
申请日：2005-02-25
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/331
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
摘要翻译：本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。本发明的另一个目的是提供一种指定半导体器件的方法。本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

2. 发明申请

US20050158936A1 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
公开(公告)号：US20050158936A1
公开(公告)日：2005-07-21
申请号：US11064820
申请日：2005-02-25
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/8234
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

3. 发明授权

US07541228B2 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US07541228B2
公开(公告)日：2009-06-02
申请号：US12003983
申请日：2008-01-04
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/302
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
摘要翻译：本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。本发明的另一个目的是提供一种指定半导体器件的方法。本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

4. 发明授权

US07459726B2 Semiconductor device comprising a light emitting element and a light receiving element 有权
标题翻译：包括发光元件和光接收元件的半导体器件
公开(公告)号：US07459726B2
公开(公告)日：2008-12-02
申请号：US10775328
申请日：2004-02-11
申请人： Kiyoshi Kato , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L31/12
CPC分类号： H01L27/1266 , H01L21/8221 , H01L27/0688 , H01L27/1214 , H01L27/3209 , H01L27/3227 , H01L29/78603 , H01L29/78621
摘要： A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes semiconductor elements stacked by transferring a semiconductor element formed on a different substrate. A resin film is formed between the stacked semiconductor elements and a metal oxide film is partially formed between the stacked semiconductor elements as well. A first electric signal is converted to an optical signal in a light emitting element electrically connected to one of the stacked semiconductor elements. Meanwhile, the optical signal is converted to a second electric signal in a light receiving element electrically connected to another one of the stacked semiconductor elements.
摘要翻译：一种半导体器件，具有由便宜的玻璃基板形成的能够处理大量信息并以较高数据速率工作的高性能集成电路。半导体器件包括通过转移形成在不同衬底上的半导体元件而堆叠的半导体元件。在层叠的半导体元件之间形成树脂膜，并且也在层叠的半导体元件之间部分地形成金属氧化物膜。第一电信号被转换成电连接到堆叠的半导体元件之一的发光元件中的光信号。同时，光电信号被转换为与另一个堆叠的半导体元件电连接的光接收元件中的第二电信号。

5. 发明申请

US20080138943A1 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
公开(公告)号：US20080138943A1
公开(公告)日：2008-06-12
申请号：US12003983
申请日：2008-01-04
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

6. 发明授权

US06875998B2 Semiconductor device, method of manufacturing the same, and method of designing the same 失效
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US06875998B2
公开(公告)日：2005-04-05
申请号：US10395310
申请日：2003-03-25
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/04 , H01L31/036
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
摘要翻译：本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。本发明的另一个目的是提供一种指定半导体器件的方法。本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

7. 发明申请

US20060255837A1 Sense Amplifier and Electronic Apparatus Using the Same 有权
公开(公告)号：US20060255837A1
公开(公告)日：2006-11-16
申请号：US11458710
申请日：2006-07-20
申请人： Yutaka Shionoiri , Kiyoshi Kato , Munehiro Azami , Junya Maruyama
发明人： Yutaka Shionoiri , Kiyoshi Kato , Munehiro Azami , Junya Maruyama
IPC分类号： G01R19/00
CPC分类号： H03F3/45179 , G01R19/00 , G11C7/062 , G11C11/4091 , G11C11/413 , G11C2207/063 , H03F3/45183 , H03F3/45188 , H03F2203/45396 , H03F2203/45506 , H03F2203/45546 , H03F2203/45551 , H03F2203/45702 , H03F2203/45726
摘要： A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.

8. 发明申请

US20160274965A1 SYSTEM OPERATIONS MANAGEMENT APPARATUS, SYSTEM OPERATIONS MANAGEMENT METHOD AND PROGRAM STORAGE MEDIUM 审中-公开
公开(公告)号：US20160274965A1
公开(公告)日：2016-09-22
申请号：US15166485
申请日：2016-05-27
申请人： Kiyoshi Kato
发明人： Kiyoshi Kato
IPC分类号： G06F11/07
CPC分类号： G06F11/079 , G06F11/0709 , G06F11/0751 , G06F11/0787 , G06F11/3452 , G06Q10/02
摘要： In a system operations management apparatus, a burden to a system administrator when providing a decision criterion in detection of a failure in the future is reduced. The system operations management apparatus 1 includes a performance information accumulation unit 12, a model generation unit 30 and an analysis unit 31. The performance information accumulation unit 12 stores performance information including a plurality of types of performance values in a system in time series. The model generation unit 30 generates a correlation model including one or more correlations between the different types of performance values stored in the performance information accumulation unit 12 for each of a plurality of periods having one of a plurality of attributes. The analysis unit 31 performs abnormality detection of the performance information of the system which has been inputted by using the inputted performance information and the correlation model corresponding to the attribute of a period in which the inputted performance information has been acquired.

9. 发明授权

US09384079B2 System operations management apparatus, system operations management method and program storage medium 有权
公开(公告)号：US09384079B2
公开(公告)日：2016-07-05
申请号：US14589255
申请日：2015-01-05
申请人： Kiyoshi Kato
发明人： Kiyoshi Kato
IPC分类号： G06F11/00 , G06F11/07 , G06Q10/02 , G06F11/34
CPC分类号： G06F11/079 , G06F11/0709 , G06F11/0751 , G06F11/0787 , G06F11/3452 , G06Q10/02
摘要： In a system operations management apparatus, a burden to a system administrator when providing a decision criterion in detection of a failure in the future is reduced. The system operations management apparatus 1 includes a performance information accumulation unit 12, a model generation unit 30 and an analysis unit 31. The performance information accumulation unit 12 stores performance information including a plurality of types of performance values in a system in time series. The model generation unit 30 generates a correlation model including one or more correlations between the different types of performance values stored in the performance information accumulation unit 12 for each of a plurality of periods having one of a plurality of attributes. The analysis unit 31 performs abnormality detection of the performance information of the system which has been inputted by using the inputted performance information and the correlation model corresponding to the attribute of a period in which the inputted performance information has been acquired.

10. 发明授权

US09188631B2 Element substrate, inspecting method, and manufacturing method of semiconductor device 有权
标题翻译：元件基板，检查方法和半导体器件的制造方法
公开(公告)号：US09188631B2
公开(公告)日：2015-11-17
申请号：US13446614
申请日：2012-04-13
申请人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
发明人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
IPC分类号： G01R31/02 , G01R31/28 , G01R31/302 , H01L27/13
CPC分类号： G01R31/2822 , G01R31/2886 , G01R31/3025 , H01L27/13
摘要： A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.
摘要翻译：提供了包括可以以高可靠性评估元件的特性的半导体层的基板及其评价方法。包括本发明的半导体层的衬底具有一个闭环电路，其中天线线圈和半导体元件串联连接，并且形成有电路的区域的表面被绝缘膜覆盖。通过使用这样的电路，可以进行非接触检查。此外，环形振荡器可以代替闭环电路。

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