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    • 4. 发明申请
    • Production method of polishing composition
    • 抛光组合物的生产方法
    • US20090042393A1
    • 2009-02-12
    • US12285498
    • 2008-10-07
    • Noriyuki TakakumaIsao OtaKenji Tanimoto
    • Noriyuki TakakumaIsao OtaKenji Tanimoto
    • H01L21/306
    • C01G25/02B82Y30/00C01P2004/64C09K3/1409C09K3/1463
    • A production method of a semiconductor device including: producing a polishing composition containing zirconium oxide sol; and planarizing a substrate having an uneven surface with said polishing composition, wherein the polishing composition containing zirconium oxide is produced by the steps comprising: baking at a temperature ranging from 400 to 1000° C., a zirconium compound having d50 (where d50 represents a particle diameter meaning that the number of particles having this particle diameter or less is 50% of the total number of particles) of zirconium compound particles of 5 to 25 μm and d99 (where d99 represents a particle diameter meaning that the number of particles having this particle diameter or less is 99% of the total number of particles) of zirconium compound particles of 60 μm or less, wherein d50 and d99 are measured by measuring a slurry of the zirconium compound by a laser diffractometry; and wet-grinding a powder of zirconium oxide obtained in the above baking in an aqueous medium until d50 of zirconium oxide particles becomes 80 to 150 nm and d99 of zirconium oxide particles becomes 150 to 500 nm, wherein d50 and d99 are measured by measuring a slurry of the zirconium compound by a laser diffractometry.
    • 一种半导体器件的制造方法,包括:制造含有氧化锆溶胶的研磨用组合物; 并且用所述抛光组合物平坦化具有不平坦表面的衬底,其中所述包含氧化锆的抛光组合物通过以下步骤制备,所述步骤包括:在400至1000℃的温度下焙烧具有d50的锆化合物(其中d50表示 粒径为5〜25μm的锆化合物粒子和d99(d99表示具有该粒子的粒子的粒子数)的粒子总数的50%) 粒径为99%以下的锆化合物粒子为60μm以下,其中d50和d99通过激光衍射法测定锆化合物的浆料来测量; 在水性介质中湿式研磨上述焙烧得到的氧化锆粉末,直到氧化锆粒子的d50为80〜150nm,氧化锆粒子的d99为150〜500nm,其中d50和d99为 锆化合物的浆料通过激光衍射法。
    • 6. 发明申请
    • Production Method of Polishing Composition
    • 抛光组合物的生产方法
    • US20080254718A1
    • 2008-10-16
    • US11920532
    • 2006-05-10
    • Noriyuki TakakumaIsao OtaKenji Tanimoto
    • Noriyuki TakakumaIsao OtaKenji Tanimoto
    • C09K3/14C01G25/02B24B29/00B02C23/18H01L21/304
    • C01G25/02B82Y30/00C01P2004/64C09K3/1409C09K3/1463
    • [Problems to Be Solved] To provide a method for obtaining a polishing composition by which a polishing speed is high and the polished surface has little surface failure.[Means to Solve the Problems] The present invention relates to a production method of a polishing composition containing zirconia oxide sol including: baking at a temperature ranging from 400 to 1000° C., a zirconium compound having d50 (where d50 represents a particle diameter meaning that the number of particles having this particle diameter or less is 50% of the total number of particles) of zirconium compound particles of 5 to 25 μm and d99 (where d99 represents a particle diameter meaning that the number of particles having this particle diameter or less is 99% of the total number of particles) of zirconium compound particles of 60 μm or less, wherein d50 and d99 are measured by measuring a slurry of the zirconium compound by a laser diffractometry; and wet-grinding a powder of zirconium oxide obtained in the above baking in an aqueous medium until d50 of zirconium oxide particles becomes 80 to 150 nm and d99 of zirconium oxide particles becomes 150 to 500 nm, wherein d50 and d99 are measured by measuring the slurry of the zirconium compound by a laser diffractometry.
    • [待解决的问题]提供一种获得抛光速度高的抛光组合物和抛光表面几乎没有表面破坏的方法。 解决问题的方法本发明涉及包含氧化锆氧化物溶胶的抛光组合物的制造方法,其包括:在400〜1000℃的温度下焙烧具有d50的锆化合物(d50表示粒径 意味着具有5〜25μm的锆化合物粒子和d99的d99(其中d99表示具有该粒径的粒子的数量的粒径的粒子的总数的50%) 或更少为总数的99%)的锆化合物颗粒,其中d50和d99通过激光衍射测量锆化合物的浆料来测量; 在水性介质中湿式研磨上述焙烧得到的氧化锆粉末,直到氧化锆粒子的d50为80〜150nm,氧化锆粒子的d99为150〜500nm,通过测定d50和d99 锆化合物的浆料通过激光衍射法。
    • 7. 发明授权
    • Cerium oxide particles and production method therefor
    • 氧化铈颗粒及其制备方法
    • US07431758B2
    • 2008-10-07
    • US10532316
    • 2003-10-28
    • Isao OtaKenji TanimotoNoriyuki Takakuma
    • Isao OtaKenji TanimotoNoriyuki Takakuma
    • C09G1/02B01J23/00C01F17/00B24D3/02
    • C01F17/0043C01P2004/52C09K3/1409C09K3/1463
    • The production method for cerium oxide particles of the present invention is a method of producing a cerium oxide particle by heating a cerium compound from a normal temperature to a temperature range of 400° C. to 1200° C., and comprises at least a temperature raising stage of a temperature rise speed of 2° C./hour to 60° C./hour, or proceeds via a stage of heating while supplying a humidified gas in a temperature raising process. By the method of the present invention, a cerium oxide powder whose particle diameter distribution of primary particles is narrow can be obtained. An aqueous cerium oxide slurry produced from the powder enables an improvement in the productivity and a reduction in the cost of a polishing step, because if it is used as an abrasive a high-quality polished face is obtained without deteriorating the polishing speed. The aqueous cerium oxide slurry of the present invention is particularly useful as an abrasive for final finish of a substrate whose main component is silica.
    • 本发明的氧化铈粒子的制造方法是通过将铈化合物从常温加热至400〜1200℃的温度范围来制造氧化铈粒子的方法,至少包含温度 升温速度为2℃/小时至60℃/小时,或者在升温过程中供给加湿气体的同时进行加热阶段。 通过本发明的方法,可以获得一次颗粒的粒径分布窄的氧化铈粉末。 由粉末制造的二氧化铈水泥浆能够提高生产率和降低抛光步骤的成本,因为如果将其用作磨料,则不会降低抛光速度而获得高质量的抛光面。 本发明的水氧化铈浆料特别可用作主要成分为二氧化硅的基材的最终光洁度的研磨剂。
    • 8. 发明授权
    • Production method of polishing composition
    • 抛光组合物的生产方法
    • US08323368B2
    • 2012-12-04
    • US11920532
    • 2006-05-10
    • Noriyuki TakakumaIsao OtaKenji Tanimoto
    • Noriyuki TakakumaIsao OtaKenji Tanimoto
    • B24D3/02C09C1/68C09K3/14
    • C01G25/02B82Y30/00C01P2004/64C09K3/1409C09K3/1463
    • [Problems to Be Solved]To provide a method for obtaining a polishing composition by which a polishing speed is high and the polished surface has little surface failure.[Means to Solve the Problems]The present invention relates to a production method of a polishing composition containing zirconia oxide sol including: baking at a temperature ranging from 400 to 1000° C., a zirconium compound having d50 (where d50 represents a particle diameter meaning that the number of particles having this particle diameter or less is 50% of the total number of particles) of zirconium compound particles of 5 to 25 μm and d99 (where d99 represents a particle diameter meaning that the number of particles having this particle diameter or less is 99% of the total number of particles) of zirconium compound particles of 60 μm or less, wherein d50 and d99 are measured by measuring a slurry of the zirconium compound by a laser diffractometry; and wet-grinding a powder of zirconium oxide obtained in the above baking in an aqueous medium until d50 of zirconium oxide particles becomes 80 to 150 nm and d99 of zirconium oxide particles becomes 150 to 500 nm, wherein d50 and d99 are measured by measuring the slurry of the zirconium compound by a laser diffractometry.[Selected Drawings]None.
    • [待解决的问题]提供一种获得抛光速度高的抛光组合物和抛光表面几乎没有表面破坏的方法。 解决问题的方法本发明涉及包含氧化锆氧化物溶胶的抛光组合物的制造方法,其包括:在400〜1000℃的温度下焙烧具有d50的锆化合物(d50表示粒径 意味着具有5〜25μm的锆化合物粒子的粒径的总数的50%),d99(其中d99表示具有该粒径的粒子的数量的粒径) 或更少为总数为99%的锆化合物颗粒),其中d50和d99通过激光衍射测量锆化合物的浆料来测量; 在水性介质中湿式研磨上述焙烧得到的氧化锆粉末,直到氧化锆粒子的d50为80〜150nm,氧化锆粒子的d99为150〜500nm,通过测定d50和d99 锆化合物的浆料通过激光衍射法。 [所选图纸]无。
    • 9. 发明申请
    • Composition for Polishing
    • 抛光组合
    • US20070240366A1
    • 2007-10-18
    • US11596389
    • 2005-05-16
    • Isao OtaKenji TanimotoNoriyuki Takakuma
    • Isao OtaKenji TanimotoNoriyuki Takakuma
    • C09G1/02C09K3/14
    • C09K3/1463C09G1/02C09K3/1409
    • [Problems] To provide a polishing agent for use in polishing for planarization in semiconductor device production steps and for use in a semiconductor device isolation process. [Means for Solving Problems]The composition for polishing comprises a component (A), which is a water-soluble organic compound containing a carboxyl group or a salt thereof; and a component (B), which is an aqueous sol of cerium oxide particles obtained by calcining a cerium compound by holding it in at least two different calcining temperature ranges and wet-milling the resultant cerium oxide powder until the ratio of the mean particle size (b1) measured in the aqueous sol by the laser diffraction method to the particle size (b2) as determined from the specific surface area measured by the gas adsorption method is in the range of either 1 to 4 or 15 to 40. The component (A) is ammonium acrylate, ammonium methacrylate, an amino acid or a derivative thereof. The component (B) is obtained by a process in which the cerium compound is calcined by holding it in two calcining temperature ranges, that is, a range of 200 to 350° C. and a range of 400 to 550° C. or 700 to 850° C., and the resultant cerium oxide powder is wet-milled.
    • [问题]提供一种用于半导体器件制造步骤中用于平面化的抛光的抛光剂并用于半导体器件隔离工艺中。 [解决问题的方法]抛光用组合物是含有羧基的水溶性有机化合物或其盐的成分(A) 和组分(B),其是通过将铈化合物保持在至少两个不同的煅烧温度范围内并将所得的氧化铈粉末进行湿磨以获得的氧化铈颗粒的水性溶胶,直到平均粒径 通过激光衍射法在水性溶胶中测定的(b 1)与通过气体吸附法测定的比表面积确定的粒径(b 2)在1〜4或15〜40的范围内。 组分(A)是丙烯酸铵,甲基丙烯酸铵,氨基酸或其衍生物。 组分(B)通过将铈化合物保持在两个煅烧温度范围,即200-350℃,400-550℃或700℃范围内煅烧的方法获得 至850℃,并将所得的氧化铈粉末湿磨。
    • 10. 发明申请
    • Cerium oxide particles and process for the production therefor
    • 氧化铈颗粒及其生产方法
    • US20060150526A1
    • 2006-07-13
    • US10532316
    • 2003-10-28
    • Isao OtaKenji TanimotoNoriyuki Takakuma
    • Isao OtaKenji TanimotoNoriyuki Takakuma
    • C09G1/02C01F17/00C09K3/14
    • C01F17/0043C01P2004/52C09K3/1409C09K3/1463
    • The production method for cerium oxide particles of the present invention is a method of producing a cerium oxide particle by heating a cerium compound from a normal temperature to a temperature range of 400° C. to 1200° C., and comprises at least a temperature raising stage of a temperature rise speed of 2° C./hour to 60° C./hour, or proceeds via a stage of heating while supplying a humidified gas in a temperature raising process. By the method of the present invention, a cerium oxide powder whose particle diameter distribution of primary particles is narrow can be obtained. An aqueous cerium oxide slurry produced from the powder enables an improvement in the productivity and a reduction in the cost of a polishing step, because if it is used as an abrasive a high-quality polished face is obtained without deteriorating the polishing speed. The aqueous cerium oxide slurry of the present invention is particularly useful as an abrasive for final finish of a substrate whose main component is silica.
    • 本发明的氧化铈粒子的制造方法是通过将铈化合物从常温加热至400〜1200℃的温度范围来制造氧化铈粒子的方法,至少包含温度 升温速度为2℃/小时至60℃/小时,或者在升温过程中供给加湿气体的同时进行加热阶段。 通过本发明的方法,可以获得一次颗粒的粒径分布窄的氧化铈粉末。 由粉末制造的二氧化铈水泥浆能够提高生产率和降低抛光步骤的成本,因为如果将其用作磨料,则不会降低抛光速度而获得高质量的抛光面。 本发明的水氧化铈浆料特别可用作主要成分为二氧化硅的基材的最终光洁度的研磨剂。