专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150276517A1 Mechanical Quantity Measuring Device 审中-公开
标题翻译：机械量测量装置
公开(公告)号：US20150276517A1
公开(公告)日：2015-10-01
申请号：US14403385
申请日：2012-05-25
申请人： Kisho Ashida , Hiroyuki Ohta , Hiromi Shimazu , Kenichi Kasai
发明人： Kisho Ashida , Hiroyuki Ohta , Hiromi Shimazu , Kenichi Kasai
IPC分类号： G01L1/22
CPC分类号： G01L1/2293 , G01L1/18 , G01L1/2243
摘要： A load cell including sensor chip (1) on which plural resistive elements rectangular in a plan view are formed, and a member (2) is provided on a front surface side of a semiconductor substrate made of silicon single crystal. The member (2) includes a load portion (3), a fixed pedestal portion (4), and a strain generation portion (5) that is spaced apart from the load portion (3) and the fixed pedestal portion (4), and arranged between the load portion (3) and the fixed pedestal portion (4). The sensor chip (1) is attached onto a front side surface (2a) of the strain generation portion (5) of the member (2) so that a direction of the silicon single crystal in the semiconductor substrate is parallel to a load direction, and a longitudinal direction of the plural resistive elements has an angle of 45° with respect to a load direction.
摘要翻译：一种传感器芯片（1）的测力传感器，其上形成有平面图中矩形的多个电阻元件，并且在由硅单晶制成的半导体衬底的正面侧设置有构件（2）。构件（2）包括负载部分（3），固定基座部分（4）和与负载部分（3）和固定基座部分（4）间隔开的应变产生部分（5），以及布置在负载部分（3）和固定基座部分（4）之间。传感器芯片（1）安装在构件（2）的应变产生部分（5）的前侧表面（2a）上，使得半导体衬底中的单晶硅的<100>方向平行于多个电阻元件的纵向方向相对于负载方向具有45°的角度。

2. 发明申请

US20110259112A1 Mechanical-Quantity Measuring Device 有权
标题翻译：机械量测量装置
公开(公告)号：US20110259112A1
公开(公告)日：2011-10-27
申请号：US13177185
申请日：2011-07-06
申请人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
发明人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
IPC分类号： G01B7/16
CPC分类号： G01L1/2293 , G01B7/18 , G01L1/18
摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.
摘要翻译：提供能够高精度地测量特定方向的应变分量的机械量测量装置。在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为与半导体单晶硅基板的<100>方向并联，另一桥接电路由与<110>方向并联的p型扩散电阻器的组合构成。

3. 发明申请

US20070240519A1 Mechanical quantity measuring apparatus 审中-公开
标题翻译：机械量测量仪
公开(公告)号：US20070240519A1
公开(公告)日：2007-10-18
申请号：US11698584
申请日：2007-01-25
申请人： Hiromi Shimazu , Hiroyuki Ohta
发明人： Hiromi Shimazu , Hiroyuki Ohta
IPC分类号： G01B7/16
CPC分类号： G01B7/18
摘要： It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.
摘要翻译：其目的是防止由于大的变形而由单晶硅衬底制成的机械量测量装置的破损。用于测量变形的安装板设置在由具有失真检测单元的半导体单晶衬底制成的传感器芯片的后表面上。即使在要测量的对象发生大的失真，也可以通过安装基板来控制在半导体单晶衬底中产生的变形。因此，半导体单晶衬底不会破裂，并且可以提供高度可靠的机械量测量装置。

4. 发明授权

US06960832B2 Semiconductor device and its production process 失效
标题翻译：半导体器件及其生产工艺
公开(公告)号：US06960832B2
公开(公告)日：2005-11-01
申请号：US10761333
申请日：2004-01-22
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
IPC分类号： H01L21/285 , H01L21/336 , H01L21/768 , H01L23/12 , H01L21/00
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76877
摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
摘要翻译：在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

5. 发明授权

US08186228B2 Strain measuring device 有权
标题翻译：应变测量装置
公开(公告)号：US08186228B2
公开(公告)日：2012-05-29
申请号：US13024368
申请日：2011-02-10
申请人： Hiroyuki Ohta , Hiromi Shimazu , Yohei Tanno
发明人： Hiroyuki Ohta , Hiromi Shimazu , Yohei Tanno
IPC分类号： G01L1/00
CPC分类号： G01L1/2293
摘要： A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.
摘要翻译：应变测量装置包括桥式电路，其包括作为应变检测部分的p型杂质扩散电阻器和包括在半导体单晶衬底中的作为应变检测部分的n型杂质扩散电阻器的桥式电路，p电阻值型杂质扩散电阻器比n型杂质扩散电阻器高1.67〜5倍。此外，杂质扩散电阻器被构造为包括带状线和连接部分的曲折形状。

6. 发明授权

US07893810B2 Strain measuring device 有权
标题翻译：应变测量装置
公开(公告)号：US07893810B2
公开(公告)日：2011-02-22
申请号：US11844374
申请日：2007-08-24
申请人： Hiroyuki Ohta , Hiromi Shimazu , Yohei Tanno
发明人： Hiroyuki Ohta , Hiromi Shimazu , Yohei Tanno
IPC分类号： G01L1/22
CPC分类号： G01L1/2293
摘要： A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.
摘要翻译：根据本发明的应变测量装置包括：桥接电路，包括作为应变检测部分的p型杂质扩散电阻器和包括作为半导体单晶衬底中的应变检测部分的n型杂质扩散电阻器的桥接电路， p型杂质扩散电阻器的薄层电阻比n型杂质扩散电阻器的薄层电阻高1.67〜5倍。此外，优选地，杂质扩散电阻器被构造为包括带状线和连接部分的曲折形状。此外，优选的是，p型杂质扩散电阻器中的带状线的数量小于n型杂质扩散电阻器中的带状线数。

7. 发明授权

US06686274B1 Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process 失效
标题翻译：具有抑制钴原子扩散的钴硅化物膜的半导体装置及其制造方法
公开(公告)号：US06686274B1
公开(公告)日：2004-02-03
申请号：US09787743
申请日：2001-06-08
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
IPC分类号： H01L2144
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76877
摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
摘要翻译：在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

8. 发明授权

US07992448B2 Mechanical-quantity measuring device 有权
标题翻译：机械量测量装置
公开(公告)号：US07992448B2
公开(公告)日：2011-08-09
申请号：US11709075
申请日：2007-02-20
申请人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
发明人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno
IPC分类号： G01L1/18 , G01L1/22
CPC分类号： G01L1/2293 , G01B7/18 , G01L1/18
摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.
摘要翻译：提供能够高精度地测量特定方向的应变分量的机械量测量装置。在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为与半导体单晶硅衬底的<100>方向并联，并且另一桥接电路由与<110>方向平行的p型扩散电阻器的组合组成。

9. 发明授权

US07836755B2 Solidification sensor 有权
标题翻译：凝固传感器
公开(公告)号：US07836755B2
公开(公告)日：2010-11-23
申请号：US11943753
申请日：2007-11-21
申请人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno , Mari Uchida , Naoto Saito
发明人： Hiromi Shimazu , Hiroyuki Ohta , Yohei Tanno , Mari Uchida , Naoto Saito
IPC分类号： G01N33/00 , G01N37/00 , G01N33/18 , G01N33/487
CPC分类号： G01N25/02 , G01N2203/0075 , G01N2203/0092
摘要： In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.
摘要翻译：在用于以实时高精度测量液体的凝固状态的凝固传感器中，并且为了使传感器小型化而具有降低的功率消耗，凝固传感器包括由液体吸收材料形成的液体吸收部分，耦合到液体吸收部分的基板和用于测量由于吸收在液体吸收部分中的液体固化时的体积变化而测量施加到基板的应变传感器。

10. 发明申请

US20050056938A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050056938A1
公开(公告)日：2005-03-17
申请号：US10901998
申请日：2004-07-30
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/7685 , H01L21/76838 , H01L21/76852 , H01L23/53219 , H01L23/53223 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05556 , H01L2224/48463 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device has a wiring structure in which an insulating layer, a wiring layer made of Al and containing at least either Au or Ag as an additional element, and a protecting layer are sequentially laminated on a substrate, so that a peel-off does not occur at an interface between the Al film and a substratum insulative material in an Al wiring structure made of Al as a main component material.
摘要翻译：半导体器件具有其中绝缘层，由Al制成的并且至少包含Au或Ag作为附加元素的布线层和保护层的布线结构，顺序层压在基板上，使得剥离在由Al作为主要成分材料制成的Al布线结构中的Al膜和基底绝缘材料之间的界面处不发生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式