会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Display controller, display control method, and image display device
    • 显示控制器,显示控制方法和图像显示装置
    • US07417630B2
    • 2008-08-26
    • US10170447
    • 2002-06-14
    • Kippei KojimaHironori NakataniYasuyuki WatanabeAkira Sakamoto
    • Kippei KojimaHironori NakataniYasuyuki WatanabeAkira Sakamoto
    • G09G5/00G06F12/00
    • G09G5/393G09G2340/0492
    • A color data signal (DATA) and the control signal (CTL) are supplied from a central processor to a display controller, and an address conversion parameter included in the control signal (CTL) is stored in a control register 5. In accordance with the address conversion parameter, display address generating means 6 performs address conversion to generate a display address, and in accordance with the display address, the color data signal (DATA) is stored in a primary storage means 7. Thereafter, an image signal is outputted via image signal outputting means 8 to a display panel. This makes it possible to provide the display controller which can reduce a mounting area and power consumption and reduce the load of a processing on the central processor which performs a processing for editing image data.
    • 彩色数据信号(DATA)和控制信号(CTL)从中央处理器提供给显示控制器,并且包含在控制信号(CTL)中的地址转换参数被存储在控制寄存器5中。 根据地址转换参数,显示地址产生装置6执行地址转换以产生显示地址,并且根据显示地址,彩色数据信号(DATA)被存储在主存储装置7中。 此后,图像信号经由图像信号输出装置8输出到显示面板。 这使得可以提供可以减少安装面积和功率消耗并且减少执行用于编辑图像数据的处理的中央处理器上的处理的负载的显示控制器。
    • 6. 发明授权
    • Photodiode manufacturing method and photodiodes
    • 光电二极管制造方法和光电二极管
    • US08564087B2
    • 2013-10-22
    • US13148091
    • 2010-02-15
    • Kazuhisa YamamuraAkira SakamotoTerumasa Nagano
    • Kazuhisa YamamuraAkira SakamotoTerumasa Nagano
    • H01L31/00H01L29/06H01L21/00
    • H01L31/1804H01L31/02327H01L31/02363H01L31/035281Y02E10/547
    • A semiconductor substrate 2 is dry etched before an insulating layer 4 is exposed, whereby a hole H1 penetrating through the semiconductor substrate 2 and reaching the insulating layer 4 is formed at a position corresponding to a photosensitive region S1. Next, an irregular asperity 22 is formed in a surface 7 of an n+ type embedded layer 6 exposed in the hole H1. The surface of the n+ type embedded layer 6 exposed in the hole H1 through the insulating layer 4 is irradiated with a picosecond to femtosecond pulsed laser beam, whereby the insulating layer 4 is removed and the surface 7 of the n+ type embedded layer 6 exposed in the hole H1 is roughened by the picosecond to femtosecond pulsed laser beam, to form the irregular asperity 22 in the entire area of the surface 7. Then the substrate with the irregular asperity 22 therein is subjected to a thermal treatment.
    • 在绝缘层4露出之前对半导体衬底2进行干蚀刻,从而在对应于感光区域S1的位置处形成贯穿半导体衬底2并到达绝缘层4的孔H1。 接下来,在露出在孔H1中的n +型嵌入层6的表面7中形成不规则的凹凸22。 通过绝缘层4暴露在孔H1中的n +型嵌入层6的表面用皮秒照射到飞秒脉冲激光束,由此去除绝缘层4,并将n +型嵌入层6的表面7暴露在 通过皮秒对飞秒脉冲激光束使孔H1粗糙化,在表面7的整个区域中形成不规则的凹凸22。然后对其中具有不规则凹凸22的基板进行热处理。