专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08729585B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08729585B2
公开(公告)日：2014-05-20
申请号：US13421817
申请日：2012-03-15
申请人： Kimitaka Yoshimura , Katsuhiko Nishitani , Akihiro Fujiwara
发明人： Kimitaka Yoshimura , Katsuhiko Nishitani , Akihiro Fujiwara
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/22 , H01L33/007
摘要： According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface, a second surface opposite to the first surface, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the lateral surface. Each of the first regions has a first width and a first roughness. Each of the second regions has a second width smaller than the first width and a second roughness smaller than the first roughness. The first regions and the second regions are alternately arranged. A proportion of the sum of the first widths to a distance between the first surface and the second surface is 0.5 or more. A semiconductor laminated body is provided above the first surface of the substrate, and includes a first semiconductor layer, an active layer and a second semiconductor layer.
摘要翻译：根据一个实施例，在半导体发光器件中，衬底包括第一表面，与第一表面相对的第二表面，与第一表面和第二表面交叉的侧表面，每个设置在侧表面上的第一区域，以及第二区域分别设置在侧面上。每个第一区域具有第一宽度和第一粗糙度。每个第二区域具有小于第一宽度的第二宽度和小于第一粗糙度的第二粗糙度。第一区域和第二区域交替布置。第一宽度与第一表面和第二表面之间的距离之和的比例为0.5以上。半导体层叠体设置在基板的第一表面上方，并且包括第一半导体层，有源层和第二半导体层。

2. 发明授权

US08759852B2 Semiconductor device having stacked body on substrate via joining metal and method for manufacturing the same 有权
标题翻译：具有通过接合金属的基板上的层叠体的半导体装置及其制造方法
公开(公告)号：US08759852B2
公开(公告)日：2014-06-24
申请号：US13039583
申请日：2011-03-03
申请人： Akihiro Fujiwara , Takashi Hakuno , Tokuhiko Matsunaga , Kimitaka Yoshimura , Katsufumi Kondo
发明人： Akihiro Fujiwara , Takashi Hakuno , Tokuhiko Matsunaga , Kimitaka Yoshimura , Katsufumi Kondo
IPC分类号： H01L29/22 , H01L29/24
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/0095 , H01L33/40 , H01L2933/0008
摘要： According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.
摘要翻译：根据一个实施例，半导体器件通过接合金属层包括衬底和衬底上的层叠体。堆叠体包括器件部分和周边部分。装置部分包括从堆叠体中包含的最底层到最顶层。围绕并设置在装置部分周围的周边部分; 外围部分是包括在层叠体中的最下层到最顶层的部分，并且包括与接合金属层接触的半导体层的一部分。

3. 发明授权

US5198686A Double hetero-type semiconductor laser device 失效
标题翻译：双异型半导体激光器件
公开(公告)号：US5198686A
公开(公告)日：1993-03-30
申请号：US791172
申请日：1991-11-13
申请人： Kimitaka Yoshimura
发明人： Kimitaka Yoshimura
IPC分类号： H01S5/00 , H01S5/02 , H01S5/223
CPC分类号： H01L33/20 , H01L33/0062 , H01S5/0224 , H01S5/0202 , H01S5/02272 , H01S5/0421 , H01S5/2206
摘要： A semiconductor laser device having: a substrate of a first conductivity type; a first clad layer of the first conductivity type formed on the substrate; an active layer formed on the first clad, the active layer being of either one of the first conductivity type and a second conductivity type opposite to the first conductivity type; a second clad layer of the second conductivity type formed on the active layer; a current block layer of the first conductivity type formed on the second clad layer; and an ohmic layer of the second conductivity type formed on the current block layer, wherein the end portion of the ohmic layer covers the side face of the second clad layer at least to some depth, at a pair of side faces of the semiconductor laser device of a double hetero type having a crystal cleavage face at least at a pair of faces substantially perpendicular to the faces of the substrate.
摘要翻译：一种半导体激光装置，具有：第一导电型的基板; 形成在所述基板上的所述第一导电类型的第一包层; 形成在所述第一包层上的有源层，所述有源层是与所述第一导电类型相反的第一导电类型和第二导电类型中的任一个; 形成在有源层上的第二导电类型的第二覆盖层; 形成在第二覆盖层上的第一导电类型的电流阻挡层; 以及形成在当前阻挡层上的第二导电类型的欧姆层，其中欧姆层的端部在半导体激光器件的一对侧面处至少一定深度覆盖第二覆盖层的侧面具有至少在基本上垂直于基板的表面的一对表面处具有晶体解理面的双异质型。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式