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1. 发明授权

US07369595B2 Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode 有权
标题翻译：垂直腔表面发射激光器（VCSEL）二极管中的分布式布拉格反射器（DBR）结构及其制造方法以及VCSEL二极管
公开(公告)号：US07369595B2
公开(公告)日：2008-05-06
申请号：US11544832
申请日：2006-10-05
申请人： Ki Soo Kim , Won Seok Han , Sung Bock Kim , Dae Kon Oh
发明人： Ki Soo Kim , Won Seok Han , Sung Bock Kim , Dae Kon Oh
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306
摘要： A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
摘要翻译：提供VCSEL二极管中的DBR结构，制造DBR结构的方法和VCSEL二极管。 VCSEL二极管中的DBR结构包括：具有预定折射率并设置在InP衬底上的InAlGaAs层; 第一InAlAs层，其折射率低于InAlGaAs层并且设置在InAlGaAs层上; InP层，其折射率低于InAlGaAs层并且设置在第一InAlAs层上; 和具有比InAlGaAs层低的折射率的第二InAlAs层并且设置在InP层上。因此，DBR结构可以减少在InAlGaAs层和InP层之间的结上的II型带阵列引起的光损耗，从而提高器件特性。

2. 发明申请

US20070127535A1 Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method on manufacturing the same, and VCSEL diode 有权
标题翻译：垂直腔表面发射激光器（VCSEL）二极管中的分布式布拉格反射器（DBR）结构，其制造方法和VCSEL二极管
公开(公告)号：US20070127535A1
公开(公告)日：2007-06-07
申请号：US11544832
申请日：2006-10-05
申请人： Ki Soo Kim , Wonk Seok Han , Sung Bock Kim , Dae Kon Oh
发明人： Ki Soo Kim , Wonk Seok Han , Sung Bock Kim , Dae Kon Oh
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306
摘要： A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
摘要翻译：提供VCSEL二极管中的DBR结构，制造DBR结构的方法和VCSEL二极管。 VCSEL二极管中的DBR结构包括：具有预定折射率并设置在InP衬底上的InAlGaAs层; 第一InAlAs层，其折射率低于InAlGaAs层并且设置在InAlGaAs层上; InP层，其折射率低于InAlGaAs层并且设置在第一InAlAs层上; 和具有比InAlGaAs层低的折射率的第二InAlAs层并且设置在InP层上。因此，DBR结构可以减少在InAlGaAs层和InP层之间的结上的II型带阵列引起的光损耗，从而提高器件特性。

3. 发明授权

US06596558B2 Method for fabricating optical devices with defectless and antireflecting spot size converter 失效
公开(公告)号：US06596558B2
公开(公告)日：2003-07-22
申请号：US10090552
申请日：2002-03-04
申请人： Sung Bock Kim , Dae Kon Oh
发明人： Sung Bock Kim , Dae Kon Oh
IPC分类号： H01L2100
CPC分类号： H01S5/10 , G02B6/1228 , G02B6/136
摘要： The present invention relates to a method for fabricating an optical device integrated with a spot size converter to reduce defect and low reflectivity in a butt-joint portion, the method including the steps of: a) depositing a first clad layer, an active layer and a second clad layer sequentially on the (100) plane of a semiconductor substrate; b) forming on the second clad layer a double dielectric mask of which the lower layer has a relatively wider width than that of the upper layer, exposing one side of the second clad layer; c) wet-etching the first clad layer, the active layer and the second clad layer in a buried ridge structure by using the double dielectric mask, and exposing the (111)A plane of the active layer tilted towards the (100) plane by a predetermined angle; d) growing a spot size conversion region on the (111)A plane of the active layer; and e) removing the double dielectric mask.

4. 发明授权

US07551662B2 Distributed feedback (DFB) quantum dot laser structure 有权
标题翻译：分布式反馈（DFB）量子点激光器结构
公开(公告)号：US07551662B2
公开(公告)日：2009-06-23
申请号：US12096351
申请日：2006-11-24
申请人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
发明人： Dae Kon Oh , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
IPC分类号： H01H3/08 , H01S5/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0425 , H01S5/3412 , H01S5/34306 , H01S2301/185
摘要： A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.
摘要翻译：提供了分布式反馈（DFB）量子点半导体激光器结构。 DFB量子点半导体激光器结构包括：形成在下电极上的第一覆层; 形成在第一包层上的光波导（WG）; 光栅结构层，形成在光学WG上并且包括多个周期性布置的光栅; 形成在所述光栅结构层上的第一分离限制性杂（SCH）层; 形成在第一SCH层上并包括至少一个量子点的有源层; 形成在所述有源层上的第二SCH层; 形成在第二SCH层上的第二覆层; 形成在所述第二覆盖层上的欧姆层; 和形成在欧姆层上的上电极。因此，光学WG设置在有源层与光栅结构层的相反侧，从而提高单一光模式效率。并且，使用非对称多电极结构来施加电流，从而最大化单模半导体激光器结构的纯度和效率。

5. 发明申请

US20080279243A1 Distributed Feedback (Dfb) Quantum Dot Laser Structure 有权
标题翻译：分布式反馈（Dfb）量子点激光器结构
公开(公告)号：US20080279243A1
公开(公告)日：2008-11-13
申请号：US12096351
申请日：2006-11-24
申请人： Dae Kon OH , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
发明人： Dae Kon OH , Jin Hong Lee , Jin Soo Kim , Sung Ui Hong , Byung Seok Choi , Hyun Soo Kim , Sung Bock Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0425 , H01S5/3412 , H01S5/34306 , H01S2301/185
摘要： A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.
摘要翻译：提供了分布式反馈（DFB）量子点半导体激光器结构。 DFB量子点半导体激光器结构包括：形成在下电极上的第一覆层; 形成在第一包层上的光波导（WG）; 光栅结构层，形成在光学WG上并且包括多个周期性布置的光栅; 形成在所述光栅结构层上的第一分离限制性杂（SCH）层; 形成在第一SCH层上并包括至少一个量子点的有源层; 形成在所述有源层上的第二SCH层; 形成在第二SCH层上的第二覆层; 形成在所述第二覆盖层上的欧姆层; 和形成在欧姆层上的上电极。因此，光学WG设置在有源层与光栅结构层的相反侧，从而提高单一光模式效率。并且，使用非对称多电极结构来施加电流，从而最大化单模半导体激光器结构的纯度和效率。

6. 发明授权

US07248616B2 Bidirectional transceiver and method for driving the same 有权
标题翻译：双向收发器及其驱动方法
公开(公告)号：US07248616B2
公开(公告)日：2007-07-24
申请号：US10714016
申请日：2003-11-14
申请人： Sung Bock Kim , Eundeok Sim , Ki Soo Kim
发明人： Sung Bock Kim , Eundeok Sim , Ki Soo Kim
IPC分类号： H01S3/08
CPC分类号： H04B10/40
摘要： There are provided a bi-directional transceiver module and a method for driving the same. The bi-directional transceiver module includes a 1.3 μm Distributed Bragg Reflection Laser Diode (DBR LD) including an active layer which performs light-emission in response to a light at 1.3 μm and a DBR mirror formed near the active layer. The DBR mirror is formed to prevent an upstream signal emerging from the 1.3 μm DBR LD from being deleted by a PD. A monitoring PD and a PD for detecting an optical signal are integrated and mounted behind the DBR mirror using a butt-joint method. The 1.3 μm DBR LD, the monitoring PD, and the PD for detecting the optical signal are electrically isolated by insulated areas. To drive the bi-directional transceiver module, a forward bias (+) is applied to a p-electrode formed on the 1.3 μm DBR LD, a backward bias (−) is applied to p-electrodes formed on the monitoring PD and the PD for detecting the optical signal, and a n-electrode as a common electrode is grounded.
摘要翻译：提供了双向收发器模块及其驱动方法。双向收发器模块包括1.3μm分布布拉格反射激光二极管（DBR LD），其包括响应于1.3μm的光执行发光的有源层和在有源层附近形成的DBR镜。 DBR镜被形成为防止从1.3mum DBR LD出现的上行信号被PD删除。用于检测光信号的监控PD和PD集成并使用对接方法安装在DBR镜后面。 1.3mum DBR LD，监控PD和用于检测光信号的PD通过绝缘区域进行电隔离。为了驱动双向收发器模块，正向偏压（+）被施加到形成在1.3mum DBR LD上的p电极，反向偏压（ - ）施加到形成在监测PD和PD上的p电极用于检测光信号，并且作为公共电极的n电极接地。

7. 发明授权

US08723222B2 Nitride electronic device and method for manufacturing the same 有权
标题翻译：氮化物电子器件及其制造方法
公开(公告)号：US08723222B2
公开(公告)日：2014-05-13
申请号：US13548522
申请日：2012-07-13
申请人： Sung Bum Bae , Eun Soo Nam , Jae Kyoung Mun , Sung Bock Kim , Hae Cheon Kim , Chull Won Ju , Sang Choon Ko , Jong-Won Lim , Ho Kyun Ahn , Woo Jin Chang , Young Rak Park
发明人： Sung Bum Bae , Eun Soo Nam , Jae Kyoung Mun , Sung Bock Kim , Hae Cheon Kim , Chull Won Ju , Sang Choon Ko , Jong-Won Lim , Ho Kyun Ahn , Woo Jin Chang , Young Rak Park
IPC分类号： H01L31/102
CPC分类号： H01L29/66446 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02647 , H01L21/8252 , H01L27/0605 , H01L27/0883
摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
摘要翻译：本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG）。

8. 发明授权

US07583869B2 Electroabsorption duplexer 有权
标题翻译：电吸收双工器
公开(公告)号：US07583869B2
公开(公告)日：2009-09-01
申请号：US11451743
申请日：2006-06-13
申请人： Young Shik Kang , Je Ha Kim , Sung Bock Kim , Yong Duck Chung , Kwang Seong Choi
发明人： Young Shik Kang , Je Ha Kim , Sung Bock Kim , Yong Duck Chung , Kwang Seong Choi
IPC分类号： G02B6/12
CPC分类号： H01S5/026 , H01S5/0262 , H01S5/0265 , H01S5/1014 , H01S5/22 , H01S5/50
摘要： An electroabsorption (EA) duplexer in which an optical amplifier, a photodetector, and an optical modulator are monolithically integrated to obtain a high radio frequency (RF) gain in radio-over fiber (RoF) link optical transmission technology is provided. The EA duplexer includes a substrate, a separation area, an optical detection/modulation unit, and an optical amplification unit. The separation area includes a first epitaxial layer formed of at least one material layer on the substrate. The first epitaxial layer functions as a first optical waveguide. The optical detection/modulation unit includes a second epitaxial layer formed of at least one material layer on the first epitaxial layer to detect and modulate an optical signal. The second epitaxial layer functions as a second optical waveguide. The optical amplification unit includes the second optical waveguide and a third epitaxial layer formed of at least one material layer on the second epitaxial layer to amplify an optical signal. The third epitaxial layer functions as a third optical waveguide. The optical amplification unit is electrically separated from the optical detection/modulation unit by the separation area and is disposed on at least one side of the optical detection/modulation unit.
摘要翻译：提供了其中光放大器，光电检测器和光调制器被单片集成以获得无线电光纤（RoF）链路光传输技术中的高射频（RF）增益的电吸收（EA）双工器。 EA双工器包括基板，分离区，光检测/调制单元和光放大单元。分离区域包括由衬底上的至少一个材料层形成的第一外延层。第一外延层用作第一光波导。光检测/调制单元包括由第一外延层上的至少一个材料层形成的第二外延层，以检测和调制光信号。第二外延层用作第二光波导。光放大单元包括第二光波导和由第二外延层上的至少一个材料层形成的第三外延层，以放大光信号。第三外延层用作第三光波导。光放大单元通过分离区域与光检测/调制单元电分离，并设置在光检测/调制单元的至少一侧。

9. 发明申请

US20060189016A1 Method of fabricating semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20060189016A1
公开(公告)日：2006-08-24
申请号：US11293615
申请日：2005-12-02
申请人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
发明人： Moon Park , Sahng Gi Park , Su Hwan Oh , Yong Soon Baek , Kwang Ryong Oh , Gyung Ock Kim , Sung Bock Kim
IPC分类号： H01L21/00
CPC分类号： H01S5/026 , H01S5/0425 , H01S5/12 , H01S5/2063 , H01S5/2275 , H01S5/3201 , H01S5/50 , H01S2302/00
摘要： Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.
摘要翻译：提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中。激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高当通过每个电极单独注入电流时输出光的强度。

10. 发明授权

US06593162B1 Method of manufacturing semiconductor optical device 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US06593162B1
公开(公告)日：2003-07-15
申请号：US10185137
申请日：2002-06-27
申请人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
发明人： Kyung Hyun Park , Yong Soon Baek , Sung Bock Kim , Kwang Ryong Oh
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/1014 , H01S5/1032 , H01S5/106 , H01S5/2081 , H01S5/227 , H01S5/2275 , H01S5/34373
摘要： The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.
摘要翻译：本发明涉及半导体光学器件的制造方法。本发明公开了一种制造平面埋入异质结构（PBH）型的光学器件的方法，通过该方法，在两端形成锥形的有源层区域被图案化，选择性地生长未掺杂的InP层，以便降低传播损耗并且通过自对准方法同时形成两个波导，从而简化了增加重复性和产率的过程。

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