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1. 发明授权

US06589100B2 Rare earth salt/oxidizer-based CMP method 有权
标题翻译：稀土盐/氧化剂基CMP法
公开(公告)号：US06589100B2
公开(公告)日：2003-07-08
申请号：US09961934
申请日：2001-09-24
申请人： Kevin Moeggenborg , Vlasta Brusic Kaufman , Isaac K. Cherian
发明人： Kevin Moeggenborg , Vlasta Brusic Kaufman , Isaac K. Cherian
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： The invention provides a method for polishing a substrate comprising a metal layer using a chemical-mechanical polishing system comprising an abrasive and/or polishing pad, a rare earth salt, an oxidizer that is a stronger oxidant than the rare earth salt, and a liquid carrier.
摘要翻译：本发明提供了一种使用包括磨料和/或抛光垫，稀土盐，比稀土盐更强的氧化剂的氧化剂的化学机械抛光系统来研磨包含金属层的基材的方法，以及液体载体

2. 发明授权

US06867140B2 Method of polishing a multi-layer substrate 有权
标题翻译：抛光多层基材的方法
公开(公告)号：US06867140B2
公开(公告)日：2005-03-15
申请号：US10353512
申请日：2003-01-29
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： C09G1/02 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
摘要翻译：本发明提供了一种用于抛光一层或多层多层基材的方法，所述多层基材包括第一金属层和第二层，其包括（i）使第一金属层与包括液体载体，至少一种氧化剂至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，至少一种具有至少约30:1的第一金属层的抛光选择性的停止化合物：第二层，其至少约30:1 停止化合物是选自包含胺，亚胺，酰胺，酰亚胺及其混合物的化合物的阳离子充氮的含氮化合物，以及抛光垫和/或研磨剂，和（ii）用系统抛光第一金属层直到至少从衬底去除第一金属层的一部分。

3. 发明授权

US06852632B2 Method of polishing a multi-layer substrate 有权
标题翻译：抛光多层基材的方法
公开(公告)号：US06852632B2
公开(公告)日：2005-02-08
申请号：US10353542
申请日：2003-01-29
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian , Renjie Zhou
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian , Renjie Zhou
IPC分类号： B24B57/02 , B24D11/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/302 , C09K13/00
CPC分类号： C09G1/02
摘要： The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
摘要翻译：本发明提供了一种用于抛光一层或多层多层基材的方法，所述多层基材包括第一金属层和第二层，其包括（i）使第一金属层与包括液体载体，至少一种氧化剂至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，其中所述抛光添加剂选自焦磷酸盐，缩合磷酸盐，膦酸及其盐，胺，氨基醇，酰胺，亚胺，亚氨基酸，腈，亚硝基，硫醇硫酯，硫醚，硫代硫酸，碳硫酸，硫代羧酸，硫代水杨酸及其混合物，以及抛光垫和/或磨料，和（ii）层，直到第一金属层的至少一部分从衬底去除。

4. 发明授权

US06855266B1 Polishing system with stopping compound and method of its use 有权
标题翻译：具有停车复合抛光系统及其使用方法
公开(公告)号：US06855266B1
公开(公告)日：2005-02-15
申请号：US09636246
申请日：2000-08-10
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： C09G1/02 , H01L21/321 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.
摘要翻译：本发明提供一种用于抛光多层基底的一层或多层的系统，其包括第一金属层和第二层，所述第二层包括（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，（iv）至少一种具有第一金属层的抛光选择性的停止化合物：至少约30:1的第二层，和（v ）抛光垫和/或磨料。本发明还提供一种组合物，其包含（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂（iv）至少一种具有第一金属层的抛光选择性的停止化合物：第二至少约30:1的层，与（v）抛光垫和/或研磨剂一起使用。

5. 发明授权

US07354530B2 Chemical mechanical polishing systems and methods for their use 有权
标题翻译：化学机械抛光系统及其使用方法
公开(公告)号：US07354530B2
公开(公告)日：2008-04-08
申请号：US11033068
申请日：2005-01-10
申请人： Shumin Wang , Vlasta Brusic Kaufman
发明人： Shumin Wang , Vlasta Brusic Kaufman
IPC分类号： C09K13/00
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics.
摘要翻译：含有α-氨基酸的化学机械抛光组合物和浆料，其可用于抛光包括多层金属或金属和电介质的基底。

6. 发明授权

US06309560B1 Chemical mechanical polishing slurry useful for copper substrates 失效
标题翻译：用于铜基材的化学机械抛光浆料
公开(公告)号：US06309560B1
公开(公告)日：2001-10-30
申请号：US08944036
申请日：1997-09-29
申请人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
发明人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
IPC分类号： H01L21302
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , H01L21/3212
摘要： A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
摘要翻译：包含成膜剂，尿素过氧化氢，络合剂，研磨剂和任选的表面活性剂的化学机械抛光浆料，以及使用化学机械抛光浆料去除含铜合金，钛和氮化钛的方法层。

7. 发明授权

US06620037B2 Chemical mechanical polishing slurry useful for copper substrates 有权
公开(公告)号：US06620037B2
公开(公告)日：2003-09-16
申请号：US10145357
申请日：2002-05-14
申请人： Vlasta Brusic Kaufman , Rodney C. Kistler , Slumin Wang
发明人： Vlasta Brusic Kaufman , Rodney C. Kistler , Slumin Wang
IPC分类号： B24B2700
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

8. 发明授权

US06593239B2 Chemical mechanical polishing method useful for copper substrates 有权
标题翻译：化学机械抛光方法对铜基材有用
公开(公告)号：US06593239B2
公开(公告)日：2003-07-15
申请号：US09366588
申请日：1999-08-04
申请人： Vlasta Brusic Kaufman , Rodney C. Kistler
发明人： Vlasta Brusic Kaufman , Rodney C. Kistler
IPC分类号： H01L21302
CPC分类号： C23F3/06 , C09G1/02 , H01L21/3212
摘要： A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
摘要翻译：包含成膜剂，氧化剂，络合剂和研磨剂的化学机械抛光浆料，以及使用化学机械抛光浆料从基材除去含有铜合金，钛和氮化钛的层的方法。

9. 发明授权

US06569350B2 Chemical mechanical polishing slurry useful for copper substrates 有权
公开(公告)号：US06569350B2
公开(公告)日：2003-05-27
申请号：US10099492
申请日：2002-03-15
申请人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
发明人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
IPC分类号： C09K1300
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , H01L21/3212
摘要： A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

10. 发明授权

US06362106B1 Chemical mechanical polishing method useful for copper substrates 失效
标题翻译：化学机械抛光方法对铜基材有用
公开(公告)号：US06362106B1
公开(公告)日：2002-03-26
申请号：US09660847
申请日：2000-09-13
申请人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
发明人： Vlasta Brusic Kaufman , Rodney C. Kistler , Shumin Wang
IPC分类号： H01L21302
CPC分类号： C23F3/06 , C09G1/02 , C23F3/00 , H01L21/3212
摘要： A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
摘要翻译：包含成膜剂，尿素过氧化氢，络合剂，研磨剂和任选的表面活性剂的化学机械抛光浆料，以及使用化学机械抛光浆料去除含铜合金，钛和氮化钛的方法层。

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