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1. 发明授权

US07646190B2 Stress measurement device and stress measurement method 有权
标题翻译：应力测量装置和应力测量方法
公开(公告)号：US07646190B2
公开(公告)日：2010-01-12
申请号：US11727152
申请日：2007-03-23
申请人： Kentaro Mizuno , Shoji Hashimoto , Hidenori Moriya , Hiromichi Yasuda
发明人： Kentaro Mizuno , Shoji Hashimoto , Hidenori Moriya , Hiromichi Yasuda
IPC分类号： G01N19/00
CPC分类号： G01L1/2281 , G01L9/065
摘要： A stress measurement device includes a current supply portion; a series circuit which is connected to the current supply portion and has a piezoresistive element that forms a single gauge resistance and a compensating diode that is connected in series to the piezoresistive element; and a voltage measuring portion that measures voltage between both ends of the series circuit. The single gauge resistance has a piezoresistive effect in which a resistance value changes according to applied stress, and a positive temperature characteristic in which the resistance value increases depending on an increase in temperature. The compensating diode is provided in a forward direction with respect to the current supply portion and has a negative temperature characteristic in which a voltage between an anode and a cathode of the compensating diode decreases depending on the increase in temperature.
摘要翻译：应力测量装置包括电流供应部分; 串联电路，其连接到电流供应部分，并具有形成单规格电阻的压阻元件和与压阻元件串联连接的补偿二极管; 以及测量串联电路的两端之间的电压的电压测量部。单规格电阻具有压阻效应，其中电阻值根据施加的应力而变化，并且电阻值随着温度升高而增加的正温度特性。补偿二极管相对于电流供给部分在正向方向上设置，并且具有负温度特性，其中补偿二极管的阳极和阴极之间的电压根据温度的升高而降低。

2. 发明申请

US20100206092A1 Force detection element 有权
标题翻译：力检测元件
公开(公告)号：US20100206092A1
公开(公告)日：2010-08-19
申请号：US12591149
申请日：2009-11-10
申请人： Kentaro Mizuno , Shoji Hashimoto , Hiromichi Yasuda , Hidenori Moriya
发明人： Kentaro Mizuno , Shoji Hashimoto , Hiromichi Yasuda , Hidenori Moriya
IPC分类号： G01L1/22
CPC分类号： G01L9/0098
摘要： A temperature compensated force detection element is provided with a substrate, an insulation layer disposed above the substrate, and a p-type semiconductor layer disposed above the insulation layer, and a positive electrode and a negative electrode disposed apart from each other above the p-type semiconductor layer. A gauge portion being electrically connected to the positive electrode and having a higher impurity concentration than the p-type semiconductor layer, and an n-type region electrically connected to the negative electrode are formed in the p-type semiconductor layer.
摘要翻译：温度补偿力检测元件设置有基板，设置在基板上方的绝缘层和设置在绝缘层上方的p型半导体层，以及在p型绝缘层上方彼此分离设置的正极和负极，型半导体层。与p型半导体层相比，与正极电连接并具有比p型半导体层更高的杂质浓度的测量部，在p型半导体层中形成与负极电连接的n型区域。

3. 发明授权

US08171806B2 Force detection element 有权
标题翻译：力检测元件
公开(公告)号：US08171806B2
公开(公告)日：2012-05-08
申请号：US12591149
申请日：2009-11-10
申请人： Kentaro Mizuno , Shoji Hashimoto , Hiromichi Yasuda , Hidenori Moriya
发明人： Kentaro Mizuno , Shoji Hashimoto , Hiromichi Yasuda , Hidenori Moriya
IPC分类号： G01L1/22
CPC分类号： G01L9/0098
摘要： A temperature compensated force detection element is provided with a substrate, an insulation layer disposed above the substrate, and a p-type semiconductor layer disposed above the insulation layer, and a positive electrode and a negative electrode disposed apart from each other above the p-type semiconductor layer. A gauge portion being electrically connected to the positive electrode and having a higher impurity concentration than the p-type semiconductor layer, and an n-type region electrically connected to the negative electrode are formed in the p-type semiconductor layer.
摘要翻译：温度补偿力检测元件设置有基板，设置在基板上方的绝缘层和设置在绝缘层上方的p型半导体层，以及在p型绝缘层上方彼此分离设置的正极和负极，型半导体层。与p型半导体层相比，与正极电连接并具有比p型半导体层更高的杂质浓度的测量部，在p型半导体层中形成与负极电连接的n型区域。

4. 发明申请

US20070240518A1 Stress measurement device and stress measurement method 有权
标题翻译：应力测量装置和应力测量方法
公开(公告)号：US20070240518A1
公开(公告)日：2007-10-18
申请号：US11727152
申请日：2007-03-23
申请人： Kentaro Mizuno , Shoji Hashimoto , Hidenori Moriya , Hiromichi Yasuda
发明人： Kentaro Mizuno , Shoji Hashimoto , Hidenori Moriya , Hiromichi Yasuda
IPC分类号： G01L1/00
CPC分类号： G01L1/2281 , G01L9/065
摘要： A stress measurement device includes a current supply portion; a series circuit which is connected to the current supply portion and has a piezoresistive element that forms a single gauge resistance and a compensating diode that is connected in series to the piezoresistive element; and a voltage measuring portion that measures voltage between both ends of the series circuit. The single gauge resistance has a piezoresistive effect in which a resistance value changes according to applied stress, and a positive temperature characteristic in which the resistance value increases depending on an increase in temperature. The compensating diode is provided in a forward direction with respect to the current supply portion and has a negative temperature characteristic in which a voltage between an anode and a cathode of the compensating diode decreases depending on the increase in temperature.
摘要翻译：应力测量装置包括电流供应部分; 串联电路，其连接到电流供应部分，并具有形成单规格电阻的压阻元件和与压阻元件串联连接的补偿二极管; 以及测量串联电路的两端之间的电压的电压测量部。单规格电阻具有压阻效应，其中电阻值根据施加的应力而变化，并且电阻值随着温度升高而增加的正温度特性。补偿二极管相对于电流供给部分在正向方向上设置，并且具有负温度特性，其中补偿二极管的阳极和阴极之间的电压根据温度的升高而降低。

5. 发明授权

US07021154B2 Force sensing element 有权
标题翻译：力传感元件
公开(公告)号：US07021154B2
公开(公告)日：2006-04-04
申请号：US10659294
申请日：2003-09-11
申请人： Shoji Hashimoto , Kouji Tsukada , Kentaro Mizuno , Jiro Sakata , Yoshiteru Omura , Yumi Masuoka
发明人： Shoji Hashimoto , Kouji Tsukada , Kentaro Mizuno , Jiro Sakata , Yoshiteru Omura , Yumi Masuoka
IPC分类号： G01B7/16
CPC分类号： G01L23/08
摘要： A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.
摘要翻译：力感测元件设置有量规部分和多个电极。仪表部分由（100）面用作主面的n型半导体衬底，（110）面用作主面的p型半导体衬底或p型半导体衬底形成，p型半导体衬底（111）面用作主面，并且在接收到力时在半导体衬底的厚度方向上被按压。电极与计量部电连接，使得在规格部分上形成与半导体基板的厚度方向对应的方向延伸的电流路径。如此构造的力传感元件可以高精度地检测力。

6. 发明授权

US06865953B2 Force sensors 有权
标题翻译：力传感器
公开(公告)号：US06865953B2
公开(公告)日：2005-03-15
申请号：US10387461
申请日：2003-03-14
申请人： Kouji Tsukada , Jiro Sakata , Kentaro Mizuno , Yoshiteru Omura , Yumi Masuoka , Shoji Hashimoto
发明人： Kouji Tsukada , Jiro Sakata , Kentaro Mizuno , Yoshiteru Omura , Yumi Masuoka , Shoji Hashimoto
IPC分类号： G01L1/18 , G01L1/22 , G01L9/00 , G01L23/10 , H01L29/84 , G01B7/16 , H01L41/04
CPC分类号： G01L23/10 , G01L1/18 , G01L1/2262 , G01L9/0052
摘要： A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.
摘要翻译：压力传感器具有壳体，其具有设置在其中的第一块和第二块。要测量的力应用于第一块的上表面。第二块的上表面与第一块的基面接触。压阻元件形成在第一块的基面内。当第一块和第二块之间的接触压力改变时，这些压阻元件的电阻值改变。第一电极形成在第一块的上表面上。第二电极形成在第二块的基面上。第一电极和第二电极之间的电特性随着第一块和第二块之间的接触压力的变化而改变。

7. 发明授权

US06843132B2 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US06843132B2
公开(公告)日：2005-01-18
申请号：US10845196
申请日：2004-05-14
申请人： Kentaro Mizuno , Kouji Tsukada , Yoshiteru Omura , Shoji Hashimoto , Jiro Sakata
发明人： Kentaro Mizuno , Kouji Tsukada , Yoshiteru Omura , Shoji Hashimoto , Jiro Sakata
IPC分类号： G01L19/04 , G01L7/08 , G01L23/08
CPC分类号： G01L23/10 , G01L23/18
摘要： A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20. The surrounding region 27, viewed cross-sectionally along the radius, is V-shaped or U-shaped, and cancels thermal expansion.
摘要翻译：实现了压力传感器，即使在高温条件下使用压力传感器的情况下也能够降低传感器元件的输出误差。压力传感器设置有壳体20，隔离壳体20的内部和外部的隔膜24，设置在壳体20内的传感器元件54，传感器元件54的输出值根据施加在其上的力而变化，以及设置在壳体内的力传递杆52，当施加压力施加到隔膜24上时，力传递杆52向下移动，力传递杆52从而对传感器元件54施加力。隔膜24具有中心区域26 与力传递杆52接触，以及围绕中心区域26的周边并将中心区域26与壳体20连接的周围区域27.沿着半径横截面地观察的周边区域27为V形或 U型，取消热膨胀。

8. 发明授权

US06915702B2 Piezoresistive transducers 失效
标题翻译：压阻传感器
公开(公告)号：US06915702B2
公开(公告)日：2005-07-12
申请号：US10300617
申请日：2002-11-21
申请人： Yoshiteru Omura , Kentaro Mizuno , Kouji Tsukada , Jiro Sakata , Norio Fujitsuka
发明人： Yoshiteru Omura , Kentaro Mizuno , Kouji Tsukada , Jiro Sakata , Norio Fujitsuka
IPC分类号： G01B7/16 , G01L1/18 , G01L1/22
CPC分类号： G01L1/2293 , G01L1/18
摘要： Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.
摘要翻译：力检测装置可以具有高检测精度并且可以防止通过应变计126向外部的电流泄漏。例如，力检测块120可以包括半导体衬底122，第一绝缘层124和半导体层126（应变片）。应变计126优选地包括其中电阻根据作用在其上的应力而变化的部位。应变计126优选地构成从力检测块120的表面突出的隆起130的至少一部分。力传递块138可以附接到脊130的顶表面。第一绝缘层124的宽度优选地大于半导体层126的宽度。

9. 发明授权

US08310248B2 Capacitive sensor device 有权
标题翻译：电容传感器装置
公开(公告)号：US08310248B2
公开(公告)日：2012-11-13
申请号：US12656542
申请日：2010-02-02
申请人： Keisuke Gotoh , Kentaro Mizuno , Norikazu Ohta
发明人： Keisuke Gotoh , Kentaro Mizuno , Norikazu Ohta
IPC分类号： G01R27/26
CPC分类号： G01L9/12 , G01D1/00 , G01D15/00 , G01D21/00 , G01H11/06 , G01P15/125
摘要： A capacitive sensor device includes first and second sensor capacitors coupled in series, a clock signal generating part, an operational amplifier, a feedback capacitor, a compensating capacitor, and a compensating signal generating part. The clock signal generating part generates a first clock signal and the second clock signal applied to the first and second sensor capacitors, respectively. The compensating signal generating part generates a compensating signal applied to the compensating capacitor. The first clock signal and the second clock signal have the same frequency and the same amplitude and have phases being opposite each other. The compensating signal has a frequency same as the first clock signal and the second clock signal, has a phase same as one of the first clock signal and the second clock signal, and has an amplitude that is adjustable.
摘要翻译：电容传感器装置包括串联耦合的第一传感器电容器和第二传感器电容器，时钟信号产生部件，运算放大器，反馈电容器，补偿电容器和补偿信号产生部件。时钟信号产生部分分别产生施加到第一和第二传感器电容器的第一时钟信号和第二时钟信号。补偿信号生成部生成施加到补偿电容器的补偿信号。第一时钟信号和第二时钟信号具有相同的频率和相同的幅度并且具有彼此相反的相位。补偿信号具有与第一时钟信号和第二时钟信号相同的频率，具有与第一时钟信号和第二时钟信号中的一个相同的相位，并且具有可调整的幅度。

10. 发明申请

US20100219848A1 Capacitive sensor device 有权
标题翻译：电容传感器装置
公开(公告)号：US20100219848A1
公开(公告)日：2010-09-02
申请号：US12656542
申请日：2010-02-02
申请人： Keisuke Gotoh , Kentaro Mizuno , Norikazu Ohta
发明人： Keisuke Gotoh , Kentaro Mizuno , Norikazu Ohta
IPC分类号： G01R27/26
CPC分类号： G01L9/12 , G01D1/00 , G01D15/00 , G01D21/00 , G01H11/06 , G01P15/125
摘要： A capacitive sensor device includes first and second sensor capacitors coupled in series, a clock signal generating part, an operational amplifier, a feedback capacitor, a compensating capacitor, and a compensating signal generating part. The clock signal generating part generates a first clock signal and the second clock signal applied to the first and second sensor capacitors, respectively. The compensating signal generating part generates a compensating signal applied to the compensating capacitor. The first clock signal and the second clock signal have the same frequency and the same amplitude and have phases being opposite each other. The compensating signal has a frequency same as the first clock signal and the second clock signal, has a phase same as one of the first clock signal and the second clock signal, and has an amplitude that is adjustable.
摘要翻译：电容传感器装置包括串联耦合的第一传感器电容器和第二传感器电容器，时钟信号产生部件，运算放大器，反馈电容器，补偿电容器和补偿信号产生部件。时钟信号产生部分分别产生施加到第一和第二传感器电容器的第一时钟信号和第二时钟信号。补偿信号生成部生成施加到补偿电容器的补偿信号。第一时钟信号和第二时钟信号具有相同的频率和相同的幅度并且具有彼此相对的相位。补偿信号具有与第一时钟信号和第二时钟信号相同的频率，具有与第一时钟信号和第二时钟信号中的一个相同的相位，并且具有可调整的幅度。

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