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1. 发明申请

US20090263975A1 FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL 有权
标题翻译：用于形成含金属的含硅绝缘膜的膜形成方法和装置
公开(公告)号：US20090263975A1
公开(公告)日：2009-10-22
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro KADONAGA , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

2. 发明授权

US08034673B2 Film formation method and apparatus for forming silicon-containing insulating film doped with metal 有权
标题翻译：用于形成掺杂有金属的含硅绝缘膜的成膜方法和装置
公开(公告)号：US08034673B2
公开(公告)日：2011-10-11
申请号：US12417939
申请日：2009-06-09
申请人： Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
发明人： Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
IPC分类号： H01L21/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译：半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜，金属源气体。该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

3. 发明授权

US07179334B2 System and method for performing semiconductor processing on substrate being processed 有权
标题翻译：在正在处理的衬底上进行半导体处理的系统和方法
公开(公告)号：US07179334B2
公开(公告)日：2007-02-20
申请号：US10484709
申请日：2002-03-19
申请人： Koichi Sakamoto , Yamato Tonegawa , Takehiko Fujita
发明人： Koichi Sakamoto , Yamato Tonegawa , Takehiko Fujita
IPC分类号： C23C16/52 , C23C16/44 , B65H1/00 , H01L21/306 , C23F1/00
CPC分类号： H01L21/67259 , H01L21/67253 , H01L21/68 , H01L22/20 , Y10S414/135 , Y10S414/136
摘要： A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.
摘要翻译：半导体处理系统（10）包括测量部分（40），信息处理部分（51）和控制部分（52）。测量部分（40）通过半导体工艺测量在目标衬底（W）上形成的测试目标膜的特性。信息处理部（51）基于测试部（40）在测试时的多个位置测定的特性的值，计算提高特性的平面均匀性所需的目标基板（W）的位置修正量目标电影。当传送装置（30）将下一个目标基板（W）传送到支撑件（30）时，控制部分（52）基于位置校正量来控制传送装置（30）的驱动部分（30A，32A）（17）执行半导体处理。

4. 发明授权

US08153451B2 System and method for performing semiconductor processing on target substrate 有权
标题翻译：在目标衬底上进行半导体处理的系统和方法
公开(公告)号：US08153451B2
公开(公告)日：2012-04-10
申请号：US11626752
申请日：2007-01-24
申请人： Koichi Sakamoto , Yamato Tonegawa , Takehiko Fujita
发明人： Koichi Sakamoto , Yamato Tonegawa , Takehiko Fujita
IPC分类号： H01L21/66
CPC分类号： H01L21/67259 , H01L21/67253 , H01L21/68 , H01L22/20 , Y10S414/135 , Y10S414/136
摘要： A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.
摘要翻译：半导体处理系统（10）包括测量部分（40），信息处理部分（51）和控制部分（52）。测量部分（40）通过半导体工艺测量在目标衬底（W）上形成的测试目标膜的特性。信息处理部（51）基于在测试时的多个位置上由测量部（40）测量的特性的值来计算提高特性的平面均匀性所需的目标基板（W）的位置修正量目标电影。当传送装置（30）将下一个目标基板（W）传送到支撑部件（30）时，控制部分（52）基于位置校正量来控制传送装置（30）的驱动部分（30A，32A） 17）进行半导体处理。

5. 发明授权

US07964516B2 Film formation apparatus for semiconductor process and method for using same 有权
标题翻译：用于半导体工艺的成膜装置及其使用方法
公开(公告)号：US07964516B2
公开(公告)日：2011-06-21
申请号：US12401214
申请日：2009-03-10
申请人： Mitsuhiro Okada , Yamato Tonegawa
发明人： Mitsuhiro Okada , Yamato Tonegawa
IPC分类号： H01L21/31 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/345 , C23C16/4404 , Y10S438/905
摘要： A method for using a film formation apparatus includes, in order to inhibit metal contamination: performing a cleaning process using a cleaning gas on an inner wall of a process container and a surface of a holder with no productive target objects held thereon; and then, performing a coating process of forming a silicon nitride film by alternately supplying a silicon source gas and a nitriding gas to cover with the silicon nitride film the inner wall of the process container and the surface of the holder with no productive target objects held thereon.
摘要翻译：使用成膜装置的方法包括：为了抑制金属污染：在处理容器的内壁和保持有没有生产目标物体的保持器的表面上执行使用清洁气体的清洁处理; 然后，通过交替地供给硅源气体和氮化气体，以氮化硅膜覆盖处理容器的内壁和保持器的表面而不产生生产目标物体来进行形成氮化硅膜的涂覆工艺上。

6. 发明申请

US20080132079A1 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20080132079A1
公开(公告)日：2008-06-05
申请号：US11905628
申请日：2007-10-02
申请人： Mitsuhiro Okada , Satoshi Mizunaga , Yamato Tonegawa , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Satoshi Mizunaga , Yamato Tonegawa , Toshiharu Nishimura
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605 , Y10S134/902
摘要： A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.
摘要翻译：使用半导体工艺的成膜装置的方法包括：第一清洗处理，其将第一清洗气体从成膜装置的反应室的内表面除去副产物膜，同时将第一清洗气体供给到反应室，并将反应室的内部设置在第一温度和第一压力下以启动第一清洁气体。该方法还包括第二清洁过程，然后在将第二清洁气体供应到反应室中时，由第二清洁气体从反应室的内表面除去污染物，并将反应室的内部设定在第二温度以及第二压力来启动第二清洁气体。第二清洗气体包括含氯气体。

7. 发明授权

US07938080B2 Method for using film formation apparatus 有权
标题翻译：使用成膜装置的方法
公开(公告)号：US07938080B2
公开(公告)日：2011-05-10
申请号：US12330559
申请日：2008-12-09
申请人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
发明人： Naotaka Noro , Yamato Tonegawa , Takehiko Fujita , Norifumi Kimura
IPC分类号： C23C16/00 , C23C16/52 , H01L21/306
CPC分类号： C23C16/52 , C23C16/4405 , Y10S438/905
摘要： In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.
摘要翻译：在使用半导体工艺的成膜装置的方法中，确定成膜工艺的工艺条件。工艺条件包括要在目标衬底上形成的薄膜的预设薄膜厚度。此外，根据处理条件来确定执行清洁处理的定时。定时由关于薄膜的累积膜厚度的阈值定义。累积膜厚度不超过成膜处理重复N次（N为正整数）的阈值，但超过成膜处理重复N + 1次的阈值。该方法包括连续执行第一至第N个处理，每个处理由成膜处理组成，并且在第N个处理之后以及在由成膜处理组成的第（N + 1）处理之前执行清洁处理。

8. 发明申请

US20070131537A1 SYSTEM AND METHOD FOR PERFORMING SEMICONDUCTOR PROCESSING ON TARGET SUBSTRATE 有权
标题翻译：用于对目标基板进行半导体处理的系统和方法
公开(公告)号：US20070131537A1
公开(公告)日：2007-06-14
申请号：US11626752
申请日：2007-01-24
申请人： KOICHI SAKAMOTO , Yamato Tonegawa , Takehiko Fujita
发明人： KOICHI SAKAMOTO , Yamato Tonegawa , Takehiko Fujita
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01L21/67259 , H01L21/67253 , H01L21/68 , H01L22/20 , Y10S414/135 , Y10S414/136
摘要： A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.
摘要翻译：半导体处理系统（10）包括测量部分（40），信息处理部分（51）和控制部分（52）。测量部分（40）通过半导体工艺测量在目标衬底（W）上形成的测试目标膜的特性。信息处理部（51）基于测试部（40）在测试时的多个位置测定的特性的值，计算提高特性的平面均匀性所需的目标基板（W）的位置修正量目标电影。当传送装置（30）将下一个目标基板（W）传送到支撑件（30）时，控制部分（52）基于位置校正量来控制传送装置（30）的驱动部分（30A，32A）（17）执行半导体处理。

9. 发明授权

US08080109B2 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US08080109B2
公开(公告)日：2011-12-20
申请号：US12149537
申请日：2008-05-02
申请人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
IPC分类号： B08B9/08
CPC分类号： B08B5/00 , C23C16/345 , C23C16/4405 , H01L21/0217 , H01L21/0228 , H01L21/3185 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.
摘要翻译：使用半导体工艺的成膜装置的方法包括设定成膜装置的反应室不含有产品目标基板的空转状态，然后进行除去存在于内部表面的污染物的清洗处理反应室通过使自由基作用在反应室的内表面上。通过激活含有氧和氢作为元素的吹扫工艺气体来产生自由基。

10. 发明申请

US20080282976A1 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US20080282976A1
公开(公告)日：2008-11-20
申请号：US12149537
申请日：2008-05-02
申请人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
发明人： Mitsuhiro Okada , Satoshi Takagi , Ryou Son , Masahiko Tomita , Yamato Tonegawa , Toshiharu Nishimura
IPC分类号： C23C16/56 , B08B5/00 , H01L21/469 , B08B9/00
CPC分类号： B08B5/00 , C23C16/345 , C23C16/4405 , H01L21/0217 , H01L21/0228 , H01L21/3185 , Y02C20/30 , Y02P70/605 , Y10S438/905
摘要： A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.
摘要翻译：使用半导体工艺的成膜装置的方法包括设定成膜装置的反应室不含有产品目标基板的空转状态，然后进行除去存在于内部表面的污染物的清洗处理反应室通过使自由基作用在反应室的内表面上。通过激活含有氧和氢作为元素的吹扫工艺气体来产生自由基。

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