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1. 发明申请

US20110117348A1 METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR 有权
标题翻译：薄膜电容器及其膜的制造树脂薄膜的方法
公开(公告)号：US20110117348A1
公开(公告)日：2011-05-19
申请号：US12917145
申请日：2010-11-01
申请人： Kenro TAKIZAWA , Yuzo Morioka , Kazuhiro Suzuki , Michimasa Ote
发明人： Kenro TAKIZAWA , Yuzo Morioka , Kazuhiro Suzuki , Michimasa Ote
IPC分类号： B32B3/00 , B29C47/12
CPC分类号： B29C47/886 , B29C47/0021 , B29C47/14 , B29C47/8845 , B29K2079/085 , B29K2105/256 , C08G73/1046 , C08L79/08
摘要： The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].
摘要翻译：本发明提供一种薄膜电容器用薄膜的制造方法，其可以制造厚度为10μm以下的薄膜电容薄膜，其耐热性和耐高压性优异通过使用聚醚酰亚胺树脂的精度，并提供薄膜电容器的膜。上述制造方法包括以下步骤：将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中，将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出，插入用于压辊31和冷却辊33之间的薄膜电容器用薄膜50，在卷绕设备40上冷却并卷绕厚度为10μm以下的薄膜电容器的冷却薄膜50，其中假设剪切 T模20的唇部21中的熔融成型材料1的比例设定为γ[/ s]，冷却辊33的圆周速度设定为V [m / s]，比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。

2. 发明授权

US08524133B2 Method for manufacturing resin film for thin film-capacitor and the film therefor 有权
标题翻译：薄膜电容器用树脂薄膜及其薄膜的制造方法
公开(公告)号：US08524133B2
公开(公告)日：2013-09-03
申请号：US12917145
申请日：2010-11-01
申请人： Kenro Takizawa , Yuzo Morioka , Kazuhiro Suzuki , Michimasa Ote
发明人： Kenro Takizawa , Yuzo Morioka , Kazuhiro Suzuki , Michimasa Ote
IPC分类号： D01D5/16
CPC分类号： B29C47/886 , B29C47/0021 , B29C47/14 , B29C47/8845 , B29K2079/085 , B29K2105/256 , C08G73/1046 , C08L79/08
摘要： The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].
摘要翻译：本发明提供一种薄膜电容器用薄膜的制造方法，其可以制造薄膜电容器薄膜，该薄膜电容器的厚度为10μm以下，耐热性优异，高厚度的耐电压性优异通过使用聚醚酰亚胺树脂的精度，并提供薄膜电容器的膜。上述制造方法包括以下步骤：将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中，将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出，插入用于在压辊31和冷却辊33之间的薄膜电容器用薄膜50，在卷绕设备40上冷却并卷绕厚度为10um以下的薄膜电容器的冷却薄膜50，其中假设剪切将T形块20的唇部21中的熔融成型材料1的速度设定为γ[/ s]，将冷却辊33的圆周速度设定为V [m / s]，将比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。

3. 发明授权

US09005500B2 Method of manufacturing film for film capacitor and film for film capacitor 有权
标题翻译：薄膜电容器薄膜和薄膜电容薄膜的制造方法
公开(公告)号：US09005500B2
公开(公告)日：2015-04-14
申请号：US12970672
申请日：2010-12-16
申请人： Michimasa Ote , Takashi Gonda , Junya Ishida , Kenro Takizawa , Kazuhiro Suzuki , Yuzo Morioka
发明人： Michimasa Ote , Takashi Gonda , Junya Ishida , Kenro Takizawa , Kazuhiro Suzuki , Yuzo Morioka
IPC分类号： B29C47/10 , B29C47/94 , B29C47/92 , B29C47/00 , B29C47/88 , C08J5/18 , C08L79/08 , H01G4/18 , H01G13/00 , B29C47/14 , B29K79/00 , B29K105/00
CPC分类号： B29C47/10 , B29C47/0004 , B29C47/0021 , B29C47/1072 , B29C47/14 , B29C47/8845 , B29C47/886 , B29C47/92 , B29C2947/92152 , B29C2947/922 , B29C2947/92228 , B29C2947/92238 , B29C2947/92285 , B29C2947/92342 , B29C2947/92438 , B29C2947/92447 , B29C2947/9259 , B29C2947/92923 , B29K2079/085 , B29K2105/256 , C08J5/18 , C08J2379/08 , C08L79/08 , H01G4/18 , H01G13/00 , Y10T428/24355
摘要： When extrusion of a molten resin by means of an extruder is started, a simple polyetherimide resin is melt extruded from a lip portion 7a of a T-die 7, and a film of the simple polyetherimide resin is molded. The molding material is then switched to a resin composition including the polyetherimide resin and a fluorine resin and then a film of the resin composition is continuously extruded and molded from the T-die 7. Having been covered with a very thin film 8a of the simple polyetherimide resin, on a flow passage face of the lip portion 7a of the T-die 7, a resin composition layer 8b including a polyetherimide resin and a fluorine resin, which has affinity with the film 8a, is then formed at a center part.
摘要翻译：当通过挤出机挤出熔融树脂时，将简单的聚醚酰亚胺树脂从T型模头7的唇部7a熔融挤出，并且模制简单的聚醚酰亚胺树脂的膜。然后将成型材料切换成包括聚醚酰亚胺树脂和氟树脂的树脂组合物，然后将树脂组合物的膜从T模具7连续地挤出和模塑。已经用简单的薄膜8a覆盖聚醚酰亚胺树脂，在T型模7的唇部7a的流路面上，与中心部分形成有与膜8a亲和的聚醚酰亚胺树脂和氟树脂的树脂组合物层8b。

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