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1. 发明授权

US06939434B2 Externally excited torroidal plasma source with magnetic control of ion distribution 失效
标题翻译：外部激发的环形等离子体源与磁控制的离子分布
公开(公告)号：US06939434B2
公开(公告)日：2005-09-06
申请号：US10164327
申请日：2002-06-05
申请人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
发明人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32412
摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.
摘要翻译：描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流，跨越所述处理区域。磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。

2. 发明授权

US07094316B1 Externally excited torroidal plasma source 失效
标题翻译：外部激发环形等离子体源
公开(公告)号：US07094316B1
公开(公告)日：2006-08-22
申请号：US09638075
申请日：2000-08-11
申请人： Hiroji Hanawa , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka , Yan Ye
发明人： Hiroji Hanawa , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka , Yan Ye
IPC分类号： C23C16/00 , C23F1/02
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively, coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.
摘要翻译：一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的工件支撑件面向所述外壳的上部，所述外壳具有穿过所述工件支撑件的大致相对侧的至少第一和第二开口。至少一个中空管道连接到第一和第二开口。通过导管提供封闭的环形路径，并且在第一和第二开口之间跨越晶片表面延伸。工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。线圈天线耦合到RF电源并且感应地耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

3. 发明授权

US06551446B1 Externally excited torroidal plasma source with a gas distribution plate 失效
标题翻译：外部激发的环形等离子体源与气体分配板
公开(公告)号：US06551446B1
公开(公告)日：2003-04-22
申请号：US09637174
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece includes a vacuum enclosure, including a wall, defining a vacuum chamber, the vacuum chamber having a main chamber portion on one side of the wall and a plenum on another side of the wall, the plenum communicating with the chamber portion through at least one opening in the wall, a workpiece support within the main chamber portion and facing the wall. A gas distribution plate is adjacent the wall and faces the workpiece support and is coupled to a reactive process gas supply for injecting reactive process gases directly into a process region adjacent the workpiece support. A gas injection port at the plenum is coupled to a diluent gas supply for injecting diluent gases into the plenum. A coil antenna adapted to accept RF power is inductively coupled to the interior of said plenum, and is capable of maintaining a plasma in a reentrant path through the plenum and across the process region.
摘要翻译：用于处理工件的等离子体反应器包括真空封壳，其包括限定真空室的壁，所述真空室具有在壁的一侧上的主室部分和在壁的另一侧上的增压室，室部分通过壁中的至少一个开口，主室部分内的工件支撑件并面向壁。气体分配板邻近壁并且面向工件支撑件并且与反应性工艺气体供应件相连接，用于将反应性工艺气体直接注入到与工件支撑件相邻的工艺区域中。增压室处的气体注入口与稀释气体供应装置连接，用于将稀释气体注入气室。适于接收RF功率的线圈天线感应耦合到所述增压室的内部，并且能够将等离子体维持在通过充气室并且跨越过程区域的折返路径中。

4. 发明授权

US06453842B1 Externally excited torroidal plasma source using a gas distribution plate 失效
标题翻译：使用气体分配板的外部激发的环形等离子体源
公开(公告)号：US06453842B1
公开(公告)日：2002-09-24
申请号：US09636700
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween, a hollow reentrant conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of said conduit sharing the interior environment. The conduit is adapted to accept irradiation of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.
摘要翻译：限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布板和基板支撑件，其间限定了其间的基板加工区域，中空折痕导管，其相应的端部通向气体分配板的相对侧上的基板处理区域，所述导管的内部共享内部环境。导管适于接受管道内的处理气体的照射，以在围绕导管内部延伸并且在腔室内部环境内的衬底处理区域上延伸的路径中维持等离子体。

5. 发明授权

US06410449B1 Method of processing a workpiece using an externally excited torroidal plasma source 失效
标题翻译：使用外部激发的环形等离子体源处理工件的方法
公开(公告)号：US06410449B1
公开(公告)日：2002-06-25
申请号：US09636436
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L21302
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method of processing a workpiece in a plasma reactor includes establishing a torroidal path for a plasma current to flow that passes near and transverse to the surface of said workpiece, maintaining a plasma current in the torroidal path by applying RF power to a portion of the torroidal path away from the surface of the workpiece, and increasing the ion density of the plasma current in the vicinity of the workpiece by constricting the area of a portion of the torroidal path overlying the workpiece.
摘要翻译：在等离子体反应器中处理工件的方法包括建立用于等离子体电流的环形路径，其流过靠近和横向于所述工件的表面的流动，通过将RF功率施加到环形路径的一部分来维持在环形路径中的等离子体电流环形路径远离工件的表面，并且通过收缩覆盖工件的一部分环形路径的面积来增加工件附近的等离子体电流的离子密度。

6. 发明授权

US06348126B1 Externally excited torroidal plasma source 失效
标题翻译：外部激发环形等离子体源
公开(公告)号：US06348126B1
公开(公告)日：2002-02-19
申请号：US09636699
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece includes a chamber adapted to accept processing gases in an evacuated environment including a workpiece support, a hollow conduit defining a wall of the chamber, and having respective ends opening adjacent opposite sides of the workpiece support, and a chamber wall portion in facing relationship to the workpiece support and defining a workpiece processing zone therebetween, the processing zone and the interior of the conduit forming a torroidal interior path, and an RF energy applicator irradiating gas within the chamber to maintain a plasma within the torroidal interior path.
摘要翻译：一种用于加工工件的等离子体反应器包括适于在真空环境中接受处理气体的室，包括工件支撑件，限定室壁的中空导管，并且具有邻近工件支撑件的相对侧面打开的相应端部，以及室壁部分与工件支撑件形成面对关系并且在它们之间限定工件加工区域，处理区域和管道内部形成环形内部路径，以及RF能量施加器照射室内的气体以将等离子体维持在环形内部路径。

7. 发明授权

US06494986B1 Externally excited multiple torroidal plasma source 失效
标题翻译：外激发多环形等离子体源
公开(公告)号：US06494986B1
公开(公告)日：2002-12-17
申请号：US09636435
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second pairs of openings therethrough near generally opposite sides of the workpiece support. At least first and second hollow conduits are connected to respective pairs of the openings to provide at least first and second closed torroidal paths through the respective conduits and extending between respective pairs of the openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal paths. Coil antennas are coupled to RF power sources and inductively coupled to the interior of the hollow conduits and capable of maintaining a plasma in the torroidal paths.
摘要翻译：一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的面向所述外壳的上部的工件支撑件，所述外壳具有穿过所述工件支撑件的大体相对侧的至少第一和第二对开口。至少第一和第二空心管道连接到相应的一对开口，以提供至少第一和第二封闭的环形路径穿过相应的导管并且在相应的成对开口之间跨越晶片表面延伸。工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。线圈天线耦合到RF功率源，并且感应耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

8. 发明授权

US06468388B1 Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate 失效
标题翻译：用于外部激发的具有气体分配板的环形等离子体源的反应室
公开(公告)号：US06468388B1
公开(公告)日：2002-10-22
申请号：US09636434
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween. A hollow conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of the conduit sharing the interior environment. The conduit being adapted to accept irradiation by an RF field of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.
摘要翻译：限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布板和衬底支撑件限定其间的衬底处理区域。中空导管，其各自的端部通向气体分配板的相对侧的基板处理区域，导管的内部共享内部环境。所述管道适于接受RF管道内的处理气体的RF场辐射，以在围绕管道内部延伸并且在腔室内部环境内的衬底处理区域周围延伸的路径中维持等离子体。

9. 发明授权

US07767561B2 Plasma immersion ion implantation reactor having an ion shower grid 失效
标题翻译：具有离子喷淋格栅的等离子体浸没离子注入反应器
公开(公告)号：US07767561B2
公开(公告)日：2010-08-03
申请号：US10896113
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32357 , H01L21/2236 , H01L21/31612
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
摘要翻译：用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域，具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。

10. 发明授权

US07642180B2 Semiconductor on insulator vertical transistor fabrication and doping process 有权
标题翻译：半导体绝缘体垂直晶体管的制造和掺杂过程
公开(公告)号：US07642180B2
公开(公告)日：2010-01-05
申请号：US11901969
申请日：2007-09-18
申请人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01J37/321 , H01L29/66795 , H01L29/66803 , H01L29/7843 , H01L29/785 , H01L29/78618
摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
摘要翻译：通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积然后可以加热以将掺杂剂驱动到晶体管中。一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

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